# Power MOSFET, N Channel, 20 V, 20 A, 0.0037 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3155128RL/)

**URL**: https://novapart.co/products/IRF3717TRPBF/power-mosfet-n-channel-20-v-a-00037-ohm-soic
**SKU**: IRF3717TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3690
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0037ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.0037ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155128RL/)

## IRF3717PbF 

HEXFET Power MOSFET 

## **Applications** 

Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Lead-Free 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**20V**|**4.4m @VGS = 10V**|**20A**|



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## **Absolute Maximum Ratings** 

|~~a~~|**Parameter**<br>~~ayp~~|**Max.**<br>~~yp~~<br>~~He~~|**Units**<br>~~He~~|
|---|---|---|---|
|VDS<br>~~a~~|Drain-to-Source Voltage<br>~~ayp~~|20<br>~~yp~~<br>~~He~~|V<br>~~He~~|
|VGS<br>~~a~~<br>~~a~~|Gate-to-Source Voltage<br>~~ayp~~<br>~~a————~~|± 20<br>~~yp~~<br>~~He~~<br>~~en~~||
|ID@ TA= 25°C<br><br>~~aa~~|Continuous Drain Current, VGS@ 10V<br>~~yp~~<br>~~aa————~~|20<br>~~yp~~<br>~~He~~<br>~~en~~|A<br>~~He~~<br>~~|~~|
|ID@ TA= 70°C<br>~~aa~~|Continuous Drain Current, VGS@ 10V<br>~~aa————~~|16<br>~~en~~||
|IDM<br>~~a~~<br>~~_$$+4—————~~|Pulsed Drain Current<br>~~a————~~<br>~~_$$+4—————~~|160<br>~~en~~<br>~~_$$+4—————~~||
|PD@TA= 25°C<br><br>~~_$$+4—————~~|Power Dissipation<br>~~————~~<br>~~es~~<br>~~_$$+4—————~~|2.5<br>~~en~~<br>~~es~~<br>~~_$$+4—————~~|W<br>~~es~~<br>~~|~~|
|PD@TA= 70°C<br>~~_$$+4—————~~|Power Dissipation<br>~~_$$+4—————~~|1.6<br>~~_$$+4—————~~||
|~~_$$+4—————~~|Linear Derating Factor<br>~~_$$+4—————~~<br>~~es~~|0.02<br>~~_$$+4—————~~<br>~~es~~|W/°C<br>~~|~~<br>~~es~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~es~~|-55  to + 150<br>~~es~~|°C<br>~~es~~|



> Notes ® through @ are on page 10 www.irf.com 

1 8/10/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~es~~|**Typ.**|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~<br>~~OD~~|20<br>~~Rs~~<br>~~es~~<br>~~D~~|–––<br>~~Rs~~|–––<br>~~Rs~~<br>~~QO~~<br>~~QO~~|V<br>~~Rs~~<br>~~QO~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~Rs~~<br>~~QO~~<br>~~QO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Rs~~<br>~~OD~~|–––<br>~~Rs~~<br>~~es~~<br>~~D~~|0.014<br>~~Rs~~|–––<br>~~Rs~~<br>~~QO~~<br>~~QO~~<br>~~E~~|V/°C<br>~~Rs~~<br>~~QO~~<br>~~QO~~<br>~~E~~|Reference to 25°C, ID= 1mA<br>~~Rs~~<br>~~QO~~<br>~~QO~~<br>~~EE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~OD~~<br>~~ee~~<br>~~+++~~|–––<br>~~D~~<br>~~ee~~|3.7<br>~~ee~~|4.4<br>~~QO~~<br>~~ee~~<br>~~E~~|mΩ<br>~~QO~~<br>~~ee~~<br>~~E~~<br>~~44~~|VGS= 10V, ID= 20A<br>~~QO~~<br>~~ee~~<br>~~EE~~|
|||–––<br>~~ee~~<br>~~+~~|4.8<br>~~ee~~<br>~~PT~~<br>~~+~~|5.7<br>~~ee~~<br>~~E~~<br>~~PT~~<br>~~+44~~||VGS= 4.5V, ID= 16A<br>~~ee~~<br>~~EE~~<br>6)|
|VGS(th)|Gate Threshold Voltage<br>~~+++~~|1.55<br>~~+~~|2.0<br>~~+~~|2.45<br>~~E~~<br>~~+44~~|V<br>~~E~~<br>~~44~~|VDS= VGS, ID= 250µA<br>~~EE~~<br>~~|~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~+++~~|–––<br>~~+~~<br>~~|~~|-5.4<br>~~+~~<br>~~|~~|–––<br>~~+44~~|mV/°C<br>~~44~~||
|IDSS|Drain-to-Source Leakage Current<br>~~+++~~<br>~~ELE~~|–––<br>~~+~~<br>~~ELE~~<br>~~|~~|–––<br>~~+~~<br>~~ELE~~<br>~~|~~|1.0<br>~~+ 44~~<br>~~ELE~~|µA<br>~~44~~<br>~~ELE~~|VDS= 16V, VGS= 0V<br>~~ELE~~<br>~~|~~|
|||–––<br>~~ELE~~<br>~~|~~|–––<br>~~ELE~~<br>~~|~~|150<br>~~ELE~~||VDS= 16V, VGS= 0V, TJ= 125°C<br>~~ELE~~<br>~~|~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ELE~~<br>~~a~~|–––<br>~~ELE~~<br>~~|~~<br>~~a~~<br>~~a~~|–––<br>~~ELE~~<br>~~|~~<br>~~a~~<br>~~ee~~|100<br>~~ELE~~<br>~~a~~|nA<br>~~ELE~~<br>~~a~~|VGS= 20V<br>~~ELE~~<br>~~|~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ee~~|-100<br>~~a~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~GO~~|57<br>~~a~~<br>~~a~~<br>~~GO~~|–––<br>~~a~~<br>~~ee~~<br>~~GO~~|–––<br>~~a~~<br>~~GO~~|S<br>~~a~~<br>~~GO~~|VDS= 10V, ID= 16A<br>~~a~~<br>~~GO~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>|22<br>~~a~~<br>|33<br>~~a~~<br>|nC<br><br>~~GO~~|See Fig. 16<br>VDS= 10V<br>VGS= 4.5V<br>ID= 16A<br><br>~~GO~~|
|Qgs1<br>~~a~~|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>|6.8<br>|–––<br>|||
|Qgs2<br>~~a~~<br>~~a~~|Post-Vth Gate-to-Source Charge<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|2.2<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~|–––<br>|7.3<br>|–––<br>|||
|Qgodr<br>~~a~~<br>~~a~~|Gate Charge Overdrive<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|5.7<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Qsw<br>~~a~~<br>~~a~~|Switch Charge (Qgs2+ Qgd)<br>~~a~~<br>~~a~~|–––<br><br>|9.5<br><br>~~I~~<br>|–––<br><br>~~I~~<br>|||
|Qoss<br>~~a~~<br>~~a~~|Output Charge<br>~~aDn~~<br>~~a~~|–––<br>~~Dn~~<br>|12<br>~~Dn~~<br>~~I~~<br>|–––<br>~~Dn~~<br>~~I~~<br>|nC<br>~~Dn~~<br>~~GO~~|VDS= 10V, VGS= 0V<br>~~Dn~~<br>~~GO~~|
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~a~~|–––<br>|12<br>~~I~~<br>|–––<br>~~I~~<br>|ns<br> ~~GO~~|VDD= 10V, VGS= 4.5V<br>ID= 16A<br>Clamped Inductive Load<br>~~GO~~|
|tr<br>~~a~~<br>~~a~~|Rise Time<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|14<br>~~I~~<br>~~a~~<br>|–––<br>~~I ~~<br>~~a~~<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~|–––<br>|15<br>|–––<br>|||
|tf<br>~~a~~|Fall Time<br>~~aes~~|–––<br>~~es~~|6.0<br>~~es~~|–––<br>~~es~~|||
|Ciss<br>|Input Capacitance<br>~~es~~|–––<br>~~es~~|2890<br>~~es~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 10V|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~<br>~~es~~|930<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|430<br>~~es~~|–––<br>~~es~~|||



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1000<br>VGS<br>TOP           10V<br>4.5V<br>3.8V<br>Pt ET 3.5V<br>100 3.3V<br>3.0V<br>2.8V<br>BOTTOM 2.5V<br>10 a Lala]ee e —__|_|_|_ e  ||}<br>1 T r 20µs PULSE WIDTH l<br>= Tj = 25°C Sees<br>Pt et ttt<br>0.1 peeee 2.5V ertTTmmelll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>a ee ee ee ee ee ee ee<br>100<br>p f | | || et<br>=== TJ = 150°C SSS<br>10<br>p f 4» ff | | |<br>T = 25°C<br>J<br>1 e e ee<br>-— ff VDS = 10V<br>20µs PULSE WIDTH<br>0.1 rt ft<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>4.5V<br>3.8V<br>ee eee<br>3.5V<br>3.3V<br>3.0V<br>100 2.8V<br>BOTTOM 2.5V<br>| GfCa | | |<br>10<br>ae es ee LH<br>P 2.5V e<br>a | 20µs PULSE WIDTH ll<br>Tj = 150°C<br>1 | LTH ail |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.5<br>ID = 20A<br>VGS = 10V<br>q<br>ya<br>pa<br>1.0<br>LZ<br>4<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000 6.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID=16A<br>Crss   = Cgd  5.0 VDS= 16V<br>Coss  = Cds + Cgd VDS= 10V<br>10000 4.0<br>Soe ere ee<br>Ciss 3.0<br>1000 Coss 2.0<br>a I AAT fd<br>Crss<br>1.0<br>100 PEI CTT 0.0 J| | | i tf<br>1 10 100 0 5 10 15 20 25 30<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00<br>100<br>TJ = 150°CJ = 150°C= 150°C<br>10.00<br>100µsec<br>=== 2S n/ c<br>T = 25°C 10<br>J<br>1.00<br>1msec<br>TA = 25°C<br>Tj = 150°C 10msec<br>VGS = 0VGS = 0V= 0V Single Pulse<br>P e ] LR<br>0.10 1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000.00<br>100.00<br>TJ = 150°CJ = 150°C= 150°C<br>10.00<br>=== 2S<br>T = 25°C<br>J<br>1.00<br>VGS = 0VGS = 0V= 0V<br>P e ]<br>0.10<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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20 2.5<br>P A NG<br>15<br>| oS<br>2.0<br>10 o N ID = 250µA PTS<br>1.5<br>A X -<br>5<br>0 1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Ambient Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>0.11 0.010.02 τJ τJτ1τ1 R1 R 1 τ2 τR22 R 2 Rτ33 R τ33 τR4τ4R4 4 τCτ Ri (°C/W)   1.4174      0.00027711.3607    0.10385521.8639    1.362000 τi (sec)<br>Ci= τi/Ri 15.3721    39.60000<br>Ci i/Ri<br>0.01 SINGLE PULSE( THERMAL RESPONSE ) P DM t 1<br>t 2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>2. Peak T J = P DM x  Z thJA + T A<br>0.001 EH R EEF HEI EEE EAE EHH 4 |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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150<br>ID<br>TOP         6.5A<br>7.5A<br>BOTTOM 16A<br>100 N p eony<br>50<br>KA PEOR<br>S UT<br>LPS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>B l<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS 0<br>25 50 75 100 125<br>ie tp — 4<br>Starting TJ , Junction Temperature (°C)<br>/<br>Fig 12c.   Maximum Avalanche Energy<br>/y Ih vs. Drain Current<br>LD<br>IAS VDS<br>AL<br>Fig 12b.   Unclamped Inductive Waveforms +<br>VDD -<br>D.U.T<br>Current Regulator VGS<br>Same Type as D.U.T.<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>50KΩ<br>12V .2µF<br>.3µF Fig 14a.   Switching Time Test Circuit<br>Lit +<br>THe D.U.T. | -VDS VDS mai<br>90%<br>VGS<br>3mA<br>10%<br>ot | V<br>IG ID GS<br>Current Sampling Resistors<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 13.** Gate Charge Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>Circuit Layout Considerations V | GS=10V<br>   •<br>(4) [©)] ) t<br>•<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance a) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vop - Inductor Curent<br>•<br>D.U.T. - Device Under Test SOO |<br>Isp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>i 1<br>|<br>Vgs(th) HH [1] 1<br>iH [1] 1<br>HH [1] 1<br>| \<br>\ H ! ! |<br>> <1) _ wm I dr_| i<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

**==> picture [185 x 15] intentionally omitted <==**

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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## **SO-8 Package Outline** 

Dimensions are shown in millimeters (inches) 

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INCHES MILLIMETERS<br>DIM<br>D B MIN MAX MIN MAX<br>A 5 A .0532 .0688 1.35 1.75<br>A1 .0040 .0098 0.10 0.25<br>-+_F LELA sfeee b .013 .020 0.33 0.51<br>8 7 6 5 c .0075 .0098 0.19 0.25<br>i 6 H | D {| .189 [| .1968 4.80 [| 5.00<br>E<br>0.25 [.010]  A E .1497 .1574 3.80 4.00<br>1 2 3 4<br>e .050  BASIC 1.27  BASIC<br>\peas a<br>e1 .025  BASIC 0.635  BASIC<br>TomoTT fr><br>s ee H .2284 .2440 5.80 6.20<br>K .0099 .0196 0.25 0.50<br>6X ob e =< L .016 .050 ee 0.40 1.27 ee<br>y  0°  8°  0°  8°<br>| | [ J [|<br>e1 K x 45°<br>A<br>> FL] C ar<br>y<br>0.10 [.004]<br>an 8X b n A1 iveau X S L 8X L 8X c T<br>0.25 [.010]  C A B 7<br>(eT @rTT}<br>FOOTPRINT<br>1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]<br>2.  CONTROLLING DIMENSION: MILLIMETER<br>nae<br>3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.<br>5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>ron<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].<br>6.46 [.255]<br>6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.<br>     MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].<br>7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO<br>| ii ii<br>0003<br>3X 1.27 [.050] aq ke<br>8X 1.78 [.070]<br>**----- End of picture text -----**<br>


## NOTES: 

1.  DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 

2.  CONTROLLING DIMENSION: MILLIMETER 

3.  DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 

4.  OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 

- 5   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6   DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 

- 7   DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 

## **SO-8 Part Marking** 

EXAMPLE: THIS IS AN IRF7101 (MOSFET) 

XXXX INTERNATIONAL F7101 RECTIFIER LOGO ~~m~~ e 

## DATE CODE (YWW) 

- P =  DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 

- Y =  LAST DIGIT OF THE YEAR 

WW =  WEEK 

- A =  ASSEMBLY SITE CODE 

LOT CODE 

PART NUMBER 

www.irf.com 

9 

## **SO-8 Tape and Reel** 

Dimensions are shown in millimeters (inches) 

**==> picture [217 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
TERMINAL NUMBER 1<br>eoss) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>NOTES:<br>1.   CONTROLLING DIMENSION : MILLIMETER.<br>2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).<br>3.   OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 330.00<br>g (12.992)  MAX. \/<br>VAY<br>14.40 ( .566 )<br>12.40 ( .488 )<br>NOTES :<br>**----- End of picture text -----**<br>


**==> picture [22 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>**----- End of picture text -----**<br>


1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [105 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. CONTROLLING DIMENSION : MILLIMETER.<br>**----- End of picture text -----**<br>


**==> picture [109 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.26mH, RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square  copper board. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF3717TRPBF/power-mosfet-n-channel-20-v-a-00037-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf3717trpbf/mosfet-n-ch-20v-20a-150deg-c-2/dp/3155128RL)
---

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