# Power MOSFET, HEXFET®, N Channel, 100 V, 59 A, 0.018 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2776816RL/)

**URL**: https://novapart.co/products/IRF3710ZSTRLPBF/power-mosfet-hexfet-n-channel-100-v-59-a-0018-ohm
**SKU**: IRF3710ZSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9480
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 160W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 59A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776816RL/)

PD - 95466A 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET[®] Power MOSFET 

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D VDSS = 100V<br>R  = 18m Ω<br>DS(on)<br>G<br>ID = 59A<br>S<br>**----- End of picture text -----**<br>


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TO-220AB D [2] Pak TO-262<br>IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~———~~|**Parameter**<br>~~———~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~———~~|59|A|
|ID@ TC= 100°C<br>~~———~~|Continuous Drain Current,VGS@ 10V(See Fig. 9)<br>~~———~~<br>~~a~~|42<br>~~a~~||
|IDM<br>~~———~~<br>~~TT~~|Pulsed Drain Current<br>~~———~~<br>~~a~~<br>~~TT~~|240<br>~~a~~<br>~~HjNVrTT’Y.|_|_~~||
|PD@TC= 25°C<br>~~———~~<br>~~TT~~|Maximum Power Dissipation<br>~~———~~<br>~~TT~~|160<br>~~HjNVrTT’Y.|_|_~~|W|
|~~TT~~|Linear Derating Factor<br>~~TT~~<br>~~eeofseeeeeeheseSs~~|1.1<br>~~HjNVrTT’Y.|_|_~~<br>~~eeofseeeeeeheseSs~~|W/°C<br>~~eeofseeeeeeheseSs~~|
|VGS<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW.~~|Gate-to-Source Voltage<br>~~eeofseeeeeeheseSs~~<br>~~a~~<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW.~~|± 20<br>~~eeofseeeeeeheseSs~~<br>~~a~~<br>~~[EE~~|V<br>~~eeofseeeeeeheseSs~~<br>~~a~~|
|EAS<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW.~~|Single Pulse Avalanche Energy (Thermally Limited)<br>~~a~~<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW.~~<br>~~SS~~|170<br>~~a~~<br>~~[EE~~<br>~~SS~~|mJ<br>~~a~~<br>~~SS~~|
|EAS(tested)<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW.~~|Single Pulse Avalanche Energy Tested Value<br>~~&-_™T_FTFCTOTOTFTFEOOnROnNW. ~~<br>~~SS~~<br>~~__~~|200<br> ~~[EE~~<br>~~SS~~||
|IAR|Avalanche Current<br>~~oo~~<br>~~__~~<br>~~i~~|See Fig.12a,12b,15,16<br>~~oo~~<br>~~i~~<br>~~ee~~|A<br>~~i~~|
|EAR|Repetitive Avalanche Energy<br>~~__~~<br>~~i~~||mJ<br>~~i~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~i~~<br>~~a~~|-55  to + 175<br>~~i~~<br>~~a~~<br>~~ee~~|°C<br>~~i~~<br>~~a~~|
||Soldering Temperature, for 10 seconds|300 (1.6mm from case )<br>~~ee~~||
||Mounting torque, 6-32 or M3 screw<br>~~a~~|10 lbf•in (1.1N•m)<br>~~ee~~<br>~~a~~|~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

1 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~RD~~|**Min.**|**Typ.**<br>~~GOGO~~|**Max. **<br>~~GOGO~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|100|–––<br>~~GOGO~~|–––<br>~~GOGO~~|V<br>~~GOGO~~<br>~~GO CO~~|VGS= 0V, ID= 250µA<br>~~GOGO~~<br>~~CO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~RD~~<br>~~OD~~|–––<br>~~OD~~|0.10<br>~~GOGO~~<br>~~OD~~<br>~~OD~~|–––<br>~~GOGO~~<br>~~OD~~<br>~~OD~~|V/°C<br>~~GOGO~~<br>~~OD~~<br>~~GO CO~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~GOGO~~<br>~~OD~~<br>~~CO~~<br>~~(O~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~OD~~<br>~~DD~~<br>~~RD~~|–––<br>~~OD~~<br>~~DD~~<br>~~GOD~~|14<br>~~OD~~<br>~~DD~~<br>~~OD~~<br>~~GOD~~|18<br>~~OD~~<br>~~DD~~<br>~~OD~~<br>~~GOD~~|mΩ<br>~~OD~~<br>~~GO CO~~<br>~~DD~~<br>~~GO~~<br>~~GOGO~~|VGS= 10V, ID= 35A<br>~~OD~~<br>~~CO~~<br>~~DD~~<br>~~(O~~<br>~~GOGO~~|
|VGS(th)|Gate Threshold Voltage<br>~~DD~~<br>~~RD~~<br>~~RD~~|2.0<br>~~DD~~<br>~~RD~~<br>~~GOD~~|–––<br>~~DD~~<br>~~OD~~<br>~~RD~~<br>~~GOD~~<br>~~GOGO~~|4.0<br>~~DD~~<br>~~OD ~~<br>~~RD~~<br>~~GOD~~<br>~~GOGO~~|V<br>~~DD~~<br> ~~GO ~~<br>~~RD~~<br>~~GOGO~~<br>~~GOGO~~|VDS= VGS, ID= 250µA<br>~~DD~~<br> ~~(O~~<br>~~RD~~<br>~~GOGO~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~RD~~|35<br>~~GOD~~|–––<br>~~GOD~~<br>~~GOGO~~|–––<br>~~GOD~~<br>~~GOGO~~<br>~~EE~~|S<br>~~GOGO~~<br>~~GOGO~~<br>~~EE~~|VDS= 50V, ID= 35A<br>~~GOGO~~<br>~~GOGO~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~RD~~<br>~~ee~~|–––<br>~~GOD~~<br>~~ee~~|–––<br>~~GOD~~<br>~~GOGO~~<br>~~ee~~|20<br>~~GOD~~<br>~~GOGO~~<br>~~ee~~<br>~~EE~~|µA<br>~~GOGO~~<br>~~GOGO~~<br>~~ee~~<br>~~EE~~|VDS= 100V, VGS= 0V<br>~~GOGO~~<br>~~GOGO~~<br>~~ee~~<br>~~EE~~|
|||–––<br>~~ee~~|–––<br>~~ee~~|250<br>~~ee~~<br>~~EE~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~EE~~<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~<br>~~EE~~<br>~~ee~~|VGS= 20V<br>~~ee~~<br>~~EE~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~ae~~|–––<br>~~ee~~<br>~~ae~~<br>~~ee~~|-200<br>~~ee~~<br>~~ae~~<br>~~ee~~||VGS= -20V<br>~~ee~~|
|Qg|Total Gate Charge<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ae~~<br>~~es~~|82<br>~~ee~~<br>~~ae~~<br>~~ee ~~<br>~~es~~|120<br>~~ee~~<br>~~ae~~<br> ~~ee~~<br>~~es~~|nC<br>~~ee~~|ID= 35A<br>VDS= 80V<br>VGS= 10V<br>~~ee~~<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~en~~<br>~~en~~|–––<br>~~en~~|19<br>~~en~~|28<br>~~en~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~en~~|–––|27|40|||
|td(on)|Turn-On DelayTime<br>~~en~~<br>~~en~~|–––<br>~~en~~|17<br>~~en~~|–––<br>~~en~~|ns<br>~~|~~|RG= 6.8Ω<br>VDD= 50V<br>ID= 35A<br>VGS= 10V<br>~~®~~<br>~~O)~~<br>~~|S~~|
|tr|Rise Time<br>~~en~~|–––<br>~~en~~|77<br>~~en~~|–––<br>~~en~~|||
|td(off)|Turn-Off DelayTime<br>~~en~~<br>~~es~~|–––<br>~~en~~|41<br>~~en~~|–––<br>~~en~~|||
|tf|Fall Time<br>~~es~~<br>~~——+~~|–––<br>~~——+~~|56<br>|–––<br>~~|~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~——+~~|–––<br>~~——+~~|4.5<br>|–––<br>~~|~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~O)~~<br>~~|S~~|
|LS|Internal Source Inductance<br>~~——+~~|–––<br>~~——+~~|7.5<br>|–––<br>~~|~~|||
|Ciss|Input Capacitance<br>~~——+~~<br>~~es~~|–––<br>~~——+ ~~<br>~~es~~|2900<br> <br>~~es~~|–––<br> ~~|~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~|S~~|
|Coss|Output Capacitance<br>~~en~~|–––<br>~~en~~|290<br>~~en~~|–––<br>~~en~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|1130<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|170<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 80V,ƒ= 1.0MHz|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~|280<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to 80V|



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)<br>~~Pe~~|–––<br>~~Pe~~|–––<br>~~Pe~~|59<br>~~Pe~~|A<br>~~(~~|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>~~(OO~~|
|ISM|Pulsed Source Current<br>(Body Diode)<br>~~Pw~~<br>~~DD~~|–––<br>~~Pw~~<br>~~DD~~|–––<br>~~Pw~~<br>~~DD~~|240<br>~~Pw~~<br>~~DD~~|||
|VSD|Diode Forward Voltage<br>~~Pw~~<br>~~DD~~<br>~~SN~~|–––<br>~~Pw~~<br>~~DD~~<br>~~SN~~|–––<br>~~Pw~~<br>~~DD~~|1.3<br>~~Pw~~<br>~~DD~~|V<br>~~(~~|TJ= 25°C,IS= 35A,VGS= 0V<br>~~(OO~~<br>~~ee~~|
|trr<br>~~a~~|Reverse RecoveryTime<br>~~DD~~<br>~~SN~~<br>~~a~~|–––<br>~~DD~~<br>~~SN~~|50<br>~~DD~~|75<br>~~DD ~~|ns<br> ~~(~~|TJ= 25°C, IF= 35A, VDD= 25V<br>di/dt = 100A/µs<br>~~(OO~~<br>~~ee~~<br>~~®~~|
|Qrr<br>~~a~~<br>~~a~~|Reverse RecoveryCharge<br>~~SN~~<br>~~a~~<br>~~a~~|–––<br>~~SN~~|100|160|nC||
|ton<br>~~a~~<br>~~a~~|Forward Turn-On Time<br>~~SN~~<br>~~a~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~SN~~<br>~~ee~~<br>~~®~~|||||



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.27mH, RG = 25 Ω , IAS = 35A, VGS =10V. Part not recommended for use above this value. 

ISD ≤ 35A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. 

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1000<br>VGS<br>TOP 15V<br>10V<br>100 8.0V<br>7.0V<br>6.0V<br>5.5V SS Hil<br>10 5.0V<br>BOTTOM 4.5V<br>1<br>4.5V<br>r ea<br>0.1<br>s e | el<br>20µs PULSE WIDTH<br>Tj = 25°C<br>0.01 FEAT Ecce El<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100 TJ = 175°C<br>— —<br>10<br>e s 2<br>1 TJ = 25°C<br>—————————————<br>VDS = 25V<br>20µs PULSE WIDTH<br>0 ee ed<br>2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>100 5.5V er| III<br>5.0V<br>BOTTOM 4.5V<br>10 4.5V<br>SS fo ee<br>Fe ee e<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1 A T he A ll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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120<br>100 T = 25°C<br>J<br>80 t t i<br>T = 175°C<br>J<br>60<br>| a<br>40<br>20 ),<br>VDS = 15V<br>20µs PULSE WIDTH<br>V<br>0<br>0 10 20 30 40 50 60 70<br>ID, Drain-to-Source Current (A)<br>GFS, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>C iss    = Cgs  + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>C  = C + C<br>10000 oss   ds  gd<br>Ciss<br>1000<br>Coss<br>Crss<br>100<br>10 |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs.<br>Drain-to-Source Voltage<br>1000.00<br>a<br>100.00<br>TJ = 175°C<br>10.00<br>TJ = 25°C<br>1.00<br>VGS = 0V<br>0.10 |<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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12.0<br>ID= 35A<br>VDS= 80V<br>10.0<br>VDS= 50V<br>VDS= 20V<br>8.0<br>6.0<br>4.0<br>2.00.0 Y |) | | f.<br>0 20 40 60 80 100<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>Patty olny ET THTH<br>100<br>100µsec<br>10<br>1msec<br>1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse<br>0.1 Re a sek an<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 3.0<br>ID = 59A<br>50 S ~ w 2.5 VGS = 10V P PEELEELE<br>40 P| NELt 2.0 F EBERR E SZS<br>302010 Er y]aeeNeFTX| | 1.51.00.5 PEOS eenEELLATL4GAE<br>0 ry yy tN\ 0.0 P FerTTLELELLLLEELEEEL<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>RT AP FEE PR PP EP PEE Ay<br>1 A<br>D = 0.50<br>0.20<br>0.1 0.10<br>mg 0.05 s ee sett<br>0.02<br>0.01<br>0.01<br>20 SINGLE PULSE g le<br>( THERMAL RESPONSE )<br>0.001 e nT ee | eee ee eee el<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>“f tp 0.01 Ω<br>;<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>os tp<br>/ |<br>IAS a l<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V [O] [G]<br>a QGS \* QGD ><br>VG<br>Charge<br>**----- End of picture text -----**<br>


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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>| Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>oe) D.U.T. +-VDS<br>VGS<br>_&<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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300<br>ID<br>TOP         15A<br>250<br>25A<br>BOTTOM 35A<br>200 N t<br>I NELLL<br>150<br>S SCL<br>100<br>P ASAT<br>50<br>C USSETT<br>0 LET ASS<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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5.0 PEE [PEELE]<br>4.0 S oha<br>C RN EEL<br>3.0 ID = 250µA<br>HL PSE<br>2.0<br>PYLE EN EE<br>1.0 PELE ETT ETT<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>PAS TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>PC ST EP<br>100 8 1 Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>0.01<br>assuming  ∆ Tj = 25°C due to<br>a ee eee avalanche losses TTT<br>10 0.05<br>0.10<br>a a ee ea See ee<br>1 8<br>A<br>0.1 )<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 35A   Purely a thermal phenomenon and failure occurs at a<br>150 (i     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>N EA   not exceeded.<br>100 3. Equation below based on circuit and waveforms shown in<br>P L NGEELT   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>A PNE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>50 P PLE NG<br>    voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>o S 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>0 Lttyy AL     T  tav = jmax Average time in avalanche.(assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V i GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>- a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt 7\<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>Re ) •   dvidtDriver controlledsame type byas ReD.U.T. Vpp + Voltage Body Diode  Forward Drop L<br>•   - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>**----- End of picture text -----**<br>


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Fig 17.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>**----- End of picture text -----**<br>


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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO IQR 019<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB package is not recommended for Surface Mount Application 

## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf3710z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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9 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL a<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002L<br>80 24 DATE CODE<br>ASSEMBLY YEAR 0 =  2000<br>assembly line position LOT CODE b uyf 7 WEEK 02<br>“Lead - Free” u u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TOR P0024 DATE CODE<br>8024 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE Woyv uy ane, YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf3710z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 www.irf.com 

www.irf.com 

## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>Note: "P" in assembly lineASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO | TeaR17IRL3103L719¢89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRL3103L<br>LOGO TORP719A<br>DATE CODE<br>1789<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

11 

## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>Trl |<br>FEED DIRECTION 1.85 (.073) — seooe tot 11.60 (.457) = [<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>ja i: : | :<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>° 12.80 (.504) 23.90 (.941) AL<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : Oe | LE       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


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4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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12 



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---

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