# Power MOSFET, N Channel, 100 V, 46 A, 0.023 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648166/)

**URL**: https://novapart.co/products/IRF3710PBF/power-mosfet-n-channel-100-v-46-a-0023-ohm-to
**SKU**: IRF3710PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7380
**Stock**: 1000+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 46A |
| Drain Source On State Resistance | 0.023ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648166/)

PD - 94954D 

## IRF3710PbF 

HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 100V<br>R  = 23m Ω<br>DS(on)<br>G<br>ID = 57A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

TO-220AB 

|a<br>-—|**Parameter**<br>a<br>a|**Max.**<br>a<br>o?FoO7<br>a|**Units**<br>a<br>o?FoO7|
|---|---|---|---|
|ID@ TC= 25°C<br>-—<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>a<br>|57<br>o?FoO7<br>a<br>~~_~~<br>|A<br>o?FoO7<br>~~_~~<br>|
|ID@ TC= 100°C<br>-—<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>a<br>|40<br>o?FoO7<br>a<br>~~_~~<br>||
|IDM<br>~~ee~~|Pulsed Drain Current<br>|180<br>~~_~~<br>||
|PD@TC= 25°C<br>~~eea~~|Power Dissipation<br>~~a~~|200<br>~~_~~<br>~~a~~|W<br>~~_~~<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|1.3<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~©~~|± 20<br>~~a~~|V<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~<br>~~©~~|28<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~©~~<br>~~a~~|20<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~pf~~|5.8<br>~~a~~<br>|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175<br>|°C|
|~~pfa~~<br>~~ee~~|SolderingTemperature, for 10 seconds<br>~~pfa~~|300(1.6mm from case)<br>~~a~~<br>~~I~~||
|~~pf~~<br>~~ee~~<br>~~nD~~|Mounting torque, 6-32 or M3 srew<br>~~pf~~<br>~~nD~~|10 lbf•in (1.1N•m)<br><br>~~nD~~<br>~~I~~|~~nD~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~-~~|**Parameter**<br>es<br>~~—S=~~|**Min.**<br>es<br>~~ee~~<br>~~—S=~~|**Typ. **<br>es<br>~~=~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~-~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~<br>~~—S=~~|100<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~es~~<br>~~=~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ<br>~~-~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~es~~<br>~~es~~<br>~~—S=~~|0.13<br>~~es~~<br>~~=~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~-~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~—S=~~|–––<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~=~~|23|mΩ|VGS= 10V, ID=28A<br>~~®~~|
|VGS(th)<br>~~-~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~—S=~~|2.0<br>~~es~~<br>~~es~~<br>~~es~~<br>~~—S=~~|–––<br>~~es~~<br>~~=~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs<br>~~-~~|Forward Transconductance<br>~~—S=~~|32<br>~~es~~<br>~~—S=~~|–––<br>~~=~~|–––|S|VDS= 25V, ID= 28A|
|IDSS<br>~~-~~|Drain-to-Source Leakage Current<br>~~—S=~~|–––<br>~~—S=~~|–––<br>~~=~~|25|µA|VDS= 100V, VGS= 0V|
|||–––<br>~~—S=~~|–––<br>~~=~~|250||VDS= 80V, VGS= 0V, TJ= 150°C|
|IGSS<br>~~-~~|Gate-to-Source Forward Leakage<br>~~—S=~~<br>~~Po~~|–––<br>~~—S=~~|–––<br>~~=~~|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~—S=~~|–––<br>~~—S=~~|–––<br>~~=~~|-100||VGS= -20V|
|Qg<br>~~-~~|Total Gate Charge<br>~~—S=~~<br>~~ee~~|–––<br>~~—S=~~<br>~~ee~~|–––<br>~~=~~<br>~~ee~~|130<br>~~ee~~|nC|ID= 28A<br>VDS= 80V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs|Gate-to-Source Charge|–––|–––|26|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|–––|43|||
|td(on)<br>ee|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~|12<br>~~es~~|–––<br>~~es~~|ns|VDD= 50V<br>ID= 28A<br>RG= 2.5Ω<br>VGS= 10V, See Fig. 10|
|tr<br>ee<br>ee|Rise Time<br>~~es~~|–––<br>~~es~~|58<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>ee<br>ee|Turn-Off Delay Time<br>~~es~~|–––<br>~~es~~|45<br>~~es~~|–––<br>~~es~~|||
|tf<br>ee<br>~~a Pe~~|Fall Time<br>~~Pe~~|–––|47|–––|||
|LD<br>~~a Pe~~<br>~~pop~~|Internal Drain Inductance<br>~~Pe~~<br>~~pop~~|–––<br>~~pop~~|4.5<br>~~pop~~|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~&~~|
|LS<br>~~a Pe~~<br>~~pop~~|Internal Source Inductance<br>~~Pe~~<br>~~pop~~|–––<br>~~pop~~|7.5<br>~~pop~~|–––|nH||
|Ciss<br>~~pop~~|Input Capacitance<br>~~pop~~<br>~~a~~|–––<br>~~pop~~<br>~~a~~|3130<br>~~pop~~<br>~~a~~|–––<br>~~a~~|pF<br><br>©)|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~&~~<br>|
|Coss<br>~~pop~~<br>~~ee~~|Output Capacitance<br>~~pop~~<br>|–––<br>~~pop~~<br>|410<br>~~pop~~<br>|–––<br>|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>|–––<br><br>~~SK~~|72<br><br>~~SK~~|–––<br><br>~~SK~~©)|||
|EAS<br>~~eeRn~~|Single Pulse Avalanche Energy<br>~~Rn~~|––– 1060<br>~~Rn~~<br>~~SK~~|1060<br>~~Rn~~<br>~~SK~~|280<br>~~Rn~~<br>~~SK~~©)|mJ<br>~~Rn~~<br>©)|IAS= 28A, L = 0.70mH<br>~~Rn~~|



Notes: ~~®~~ Repetitive rating;  pulse width limited by ~~®~~ ISD ≤ 28A , di/d ~~t~~ ≤ 380A/µs, VDD ≤ V(BR)DSS, max. junction temperature. (See fig. 11) TJ ≤ 175°C @ Starting TJ = 25°C, L = 0.70mH @ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- RG = 25 Ω , IAS = 28A, VGS=10V (See Figure 12) 

© This is a typical value at device destruction and represents operation outside rated limits. 

This is a calculated value limited to TJ = 175°C . 

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1000 1000<br>VGS VGS<br>TOP           16V TOP           16V<br>                   10V                    10V<br>                   7.0V                    7.0V<br>                   6.0V 0 a |                    6.0V i a a |<br>100                5.0V 100                5.0V<br>                   4.5V 1 ?-<iiimmemill                    4.5V A= ase<br>                   4.0V                    4.0V<br>BOTTOM   3.5V BOTTOM   3.5V<br>Z e) WA<br>10 10<br>3.5V<br>3.5V<br>S alil annie fae ene<br>1 02 1<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.1 anniee Tj = 25°C eel ll 0.1 RieSe Tj = 175°C ee al l l<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.00 3.0<br>ID = 57A<br>Ee es es es es<br>es 2.5<br>100.00 a ee ee eee Pt tT t e tyA<br>TJ = 175°C 2.0<br>EE<br>a 7 Aes<br>10.00 7 ¢A ee 1.5 PCE AA<br>F /\7 | | ft) OF ERR Zee<br>TJ = 25°C 1.0<br>e e e A<br>1.00 | | pt Sap eneeeeee<br>fey Ae ee ee ee ee 0.5 i+7T 1} } i tt ttt<br>VDS =<br>0.10 Pet 20µs PULSE WIDTH 0.0 Ft ttt ttt | V GS = 10V<br>3.0 ep 4.0 5.0  pe 6.0 7.0 8.0 9.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(  C)° 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>= =: Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>=a C  = C + C<br>10000 oss   ds  gd<br>Ciss<br>at<br>1000 R RR<br>Coss<br>100 Crss<br>o e) ge<br>10 |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.00<br>100.00<br>| __| ar<br>T = 175°C<br>J<br>- 10.00 a a<br>pf fe<br>1.00 TJ = 25°C<br>VGS = 0V<br>0.10 oe a<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 28A<br>VDS =  80V<br>fs t VDS =  50V {fT<br>VDS =  20V<br>10<br>PT te yy<br>7 Ye<br>See) 4See<br>5<br>2<br>0 Vi} ifi t t<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>a es Hil  a I<br>100µsec<br>10 SG I<br>1msec<br>po snspMegny<br>1 10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 ee eT<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
60 Ki tT tT tt tt tt Vos a<br>50 PSAP 7<br>PT NEE EL ET ; D.U.T.<br>40 PNET 8 -<br>Pit | PT IN ET<br>30 SERENE )+ Vos ≤ 1<br>≤ 0.1 %<br>BREN puyracor<br>20<br>FSS :<br>10 VDS<br>SEE A Fig 10a. Switching Time Test Circuit<br>90%<br>0 Pi  Eee fi<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>ti tit t t tt ty 10% \ OY<br>/\ \<br>Fig 9.   Maximum Drain Current Vs. VGS l ee<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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 1 a<br>oea eee ee eet ee re<br>D = 0.50<br>B R<br>a |<br>0.20<br>S H TTT<br>0.1 0.10<br>aap alcl<br>0.05 P DM<br>7 74 SINGLE PULSE ee ee t 1<br>eat 0.02 (THERMAL RESPONSE)<br>0.01 t 2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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550<br>I D<br>NESEEEE<br>TOP 11A<br>20A<br>RUneeee<br>440 PN BOTTOM 28A<br>330<br>SENSE<br>ONENEE EEE EEE<br>220<br>SCEasas N \<br>110<br>PUP ASSN ASSN EE<br>SREERER NNER<br>0 Pot | | USS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V D<br>TOP 11A<br>20A<br>RUneeee<br>VDS L DRIVER 440 BOTTOM 28A<br>PN<br>RG D.U.T + 330<br>- [V][DD] SENSE<br>IAS A<br>ae 20VVGS ONENEE EEE EEE<br>tp 0.01 Ω<br>220<br>Fig 12a. UnclampedaInductive Test Circuit SCEasas N \<br>110<br>PUP ASSN ASSN EE<br>V(BR)DSS<br>-— tp SREERER NNER<br>0 Pot | | USS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>//al\ Fig 12c. MaximumVs. 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy<br>IAS<br>Fig 42b, Unclamped Inductive Waveforms<br>Current Regulator<br>Oo Same Type as D.U.T. :<br>50K Ω<br>12V .2 µ F<br>QG .3 µ F<br>CT res<br>+<br>Ves ae : D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>OL.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019¢<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB package is not recommended for Surface Mount Application 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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