# Power MOSFET, N Channel, 30 V, 87 A, 6300 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1436944/)

**URL**: https://novapart.co/products/IRF3709ZSPBF/power-mosfet-n-channel-30-v-87-a-6300-ohm-to-263
**SKU**: IRF3709ZSPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6720
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.25V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 79mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 87A |
| Drain Source On State Resistance | 6300µohm |
| Gate Source Threshold Voltage Max | 2.25V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1436944/)

## IRF3709ZPbF PD -95465 IRF3709ZSPbF 

## IRF3709ZLPbF 

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power Lead-Free 

HEXFET ® Power MOSFET **VDSS RDS(on) max Qg 30V 6.3m 17nC** ~~a a~~ 

## **Benefits** 

) Low RLow Gate ChargeDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRF3709Z IRF3709ZS IRF3709ZL 

## **Absolute Maximum Ratings** 

|~~SS~~|**Parameter**<br>~~SS~~|**Max.**<br>~~SS~~<br>~~ee~~|**Units**<br>~~SS~~<br>~~eT~~|
|---|---|---|---|
|VDS<br>~~SS~~<br>~~—_|~~|Drain-to-Source Voltage<br>~~SS~~<br>~~a~~<br>~~|si~~|30<br>~~SS~~<br>~~ee~~<br>~~a~~<br>~~si~~|V<br>~~SS~~<br> ~~eT~~<br>~~si~~|
|VGS<br>~~—_|~~<br>~~————~~|Gate-to-Source Voltage<br>~~a~~<br>~~|si~~<br>~~————~~<br>~~ee~~|± 20<br>~~ee ~~<br>~~a~~<br>~~si~~<br>~~ee~~||
|ID@ TC= 25°C<br>~~—_ |~~<br>~~a~~<br>~~————~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~|~~<br>~~a~~<br>~~————~~<br>~~ee~~|87<br>~~a~~<br><br>~~a~~<br>~~ee~~|A<br>|
|ID@ TC= 100°C<br>~~————~~<br>~~Ce~~|Continuous Drain Current, VGS@ 10V<br>~~————~~<br>~~ee~~<br>~~a~~|62<br>~~ee~~||
|IDM<br>~~————~~<br>~~Ce~~|Pulsed Drain Current<br>~~————~~<br>~~ee~~<br>~~a~~|350<br>~~ee~~||
|PD@TC= 25°C<br>~~————~~<br>~~Ce~~<br>~~———_~~<br>~~|~~|Maximum Power Dissipation<br>~~————~~<br>~~ee ~~<br>~~a~~<br>~~|sos~~|79<br> ~~ee~~<br>~~sos~~|W<br>~~sos~~|
|PD@TC= 100°C<br>~~Ce~~<br>~~———_~~<br>~~|~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~|sos~~<br>~~Ca~~|40<br>~~sos~~||
|~~———_~~<br>~~|~~<br>~~a~~|Linear Derating Factor<br>~~|sos~~<br>~~Ca~~|0.53<br>~~sos~~|W/°C<br>~~sos~~|
|TJ<br>TSTG<br>~~a ~~<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br> ~~Ca~~<br>~~pf~~|-55  to + 175<br>~~pf~~|°C<br>~~pf~~<br>~~a~~<br>~~a~~|
|~~pf~~<br>~~a~~|Soldering Temperature, for 10 seconds<br>~~pf~~<br>~~a~~<br>~~a~~|300 (1.6mm from case)<br>~~pf~~<br>~~a~~<br>~~a~~||
|~~a~~|Mounting Torque, 6-32 or M3 screw<br>~~a~~|10 lbf in (1.1N m)<br>~~a~~|~~a~~|



www.irf.com 

> Notes @ hrough  are on page 12 @ 

1 6/30/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~Rs~~<br>~~a~~|**Parameter**<br>~~GG~~<br>~~GO~~|**Min.**<br>~~GG~~<br>~~GO~~|**Typ.**<br>~~GG~~<br>~~GS~~|**Max. **<br>~~GG~~|**Units**<br>~~GG~~|**Conditions**<br>~~GG~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~Rs~~<br>~~a~~<br>~~Rs~~|Drain-to-Source Breakdown Voltage<br>~~GG~~<br>~~GO~~<br>~~GG~~|30<br>~~GG~~<br>~~GO~~<br>~~GG~~|–––<br>~~GG~~<br>~~GS~~<br>~~GG~~|–––<br>~~GG~~<br>~~GG~~|V<br>~~GG~~<br>~~GG~~|VGS= 0V, ID= 250µA<br>~~GG~~<br>~~GG~~|
|∆ΒVDSS/∆TJ<br>~~a~~<br>~~Rs~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~GG~~<br>~~|~~|–––<br>~~GO ~~<br>~~GG~~<br>~~eee~~<br>~~|~~|0.021<br> ~~GS~~<br>~~GG~~<br>~~eee~~<br>|–––<br>~~GG~~<br>~~eee~~<br>|mV/°C<br>~~GG~~<br>~~eee~~|Reference to 25°C, ID= 1mA<br>~~GG~~<br>~~eee~~|
|RDS(on)<br>~~Rs~~<br>~~ee~~<br>~~**e**~~<br>~~s~~|Static Drain-to-Source On-Resistance<br>~~GG~~<br>~~ee~~<br>~~|~~<br>~~**e**e~~<br>|–––<br>~~GG~~<br>~~ee~~<br>~~eee~~<br>~~|~~|5.0<br>~~GG~~<br>~~ee~~<br>~~eee~~<br>|6.3<br>~~GG~~<br>~~ee~~<br>~~eee~~<br>|mΩ<br>~~GG~~<br>~~ee~~<br>~~eee~~<br><br>|VGS= 10V, ID= 21A<br>~~GG~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~eee~~<br>~~||~~<br>~~eee~~<br>|6.2<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~eee~~<br>|7.8<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~eee~~<br>||VGS= 4.5V, ID= 17A<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>|
|VGS(th)<br>~~**e**~~<br>~~s~~|Gate Threshold Voltage<br>~~|~~<br>~~**e**e~~<br>|1.35<br>~~eee~~<br>~~||~~<br>~~eee~~<br>|–––<br>~~eee~~<br>~~|~~<br>~~eee~~<br>|2.25<br>~~eee~~<br>~~|~~<br>~~eee~~<br>|V<br>~~eee ~~<br><br>|VDS= VGS, ID= 250µA<br> ~~eee~~<br>~~eee~~<br><br>~~EE~~|
|∆VGS(th)/∆TJ<br>~~**e**~~<br>~~s~~|Gate Threshold Voltage Coefficient<br><br>~~**e**e~~<br>|–––<br>~~|~~<br>~~eee~~<br><br>~~a~~|-5.5<br>~~|~~<br>~~eee~~<br>|–––<br>~~|~~<br>~~eee~~<br><br>~~EE~~|mV/°C<br><br><br>~~EE~~||
|IDSS<br>~~**e**~~<br>~~see~~<br>~~———————————~~|Drain-to-Source Leakage Current<br><br>~~**e**e ~~<br>~~ee~~<br>~~———————————~~|–––<br>~~|~~<br> ~~eee~~<br>~~ee~~<br>~~a~~|–––<br>~~|~~<br>~~eee~~<br>~~ee~~|1.0<br>~~|~~<br>~~eee ~~<br>~~ee~~<br>~~EE~~|µA<br> <br>~~ee~~<br>~~EE~~<br>~~ee~~|VDS= 24V, VGS= 0V<br> ~~eee~~<br>~~ee~~<br>~~EE~~|
|||–––<br>~~ee~~<br>~~a~~<br>~~———————————~~|–––<br>~~ee~~<br>~~ee~~<br>~~———————————~~|150<br>~~ee~~<br>~~EE~~<br>~~ee~~<br>~~———————————~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~EE~~<br>~~EE~~|
|IGSS<br>~~———————————~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~———————————~~|–––<br>~~a~~<br>~~———————————~~|–––<br>~~ee~~<br>~~———————————~~|100<br>~~EE~~<br>~~ee~~<br>~~———————————~~|nA<br>~~EE~~<br>~~ee~~<br>~~Gs~~<br>|VGS= 20V<br>~~EE~~<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~———————————~~<br>~~es~~<br>|–––<br>~~———————————~~<br>~~eG~~<br>|–––<br>~~———————————~~<br>~~eG~~<br>|-100<br>~~———————————~~<br>~~eG~~<br>||VGS= -20V<br>~~EE~~<br>|
|gfs<br>~~———————————~~<br>~~es~~<br>~~a~~|Forward Transconductance<br>~~———————————~~<br>~~es~~<br>~~GG~~|88<br>~~———————————~~<br>~~eG~~<br>~~GG~~|–––<br>~~———————————~~<br>~~eG~~<br>~~GG~~|–––<br>~~———————————~~<br>~~eG~~<br>~~GG~~|S<br>~~Gs~~<br>~~GG~~|VDS= 15V, ID= 17A<br>~~EE~~<br>~~GG~~|
|Qg<br>~~es~~<br>~~a~~<br>~~es~~|Total Gate Charge<br>~~es ~~<br>~~GG~~|–––<br> ~~eG~~<br>~~GG~~<br>~~ee~~|17<br>~~eG~~<br>~~GG~~<br>~~ee~~|26<br>~~eG ~~<br>~~GG~~|nC<br> ~~Gs~~<br>~~GG~~|See Fig. 14a&b<br>VGS= 4.5V<br>ID= 17A<br>VDS= 15V<br>~~GG~~|
|Qgs1<br><br>~~a~~<br>~~a~~<br>~~es~~|Pre-Vth Gate-to-Source Charge<br>~~GG~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~<br>~~ee~~|4.4<br>~~GG~~<br>~~ee~~<br>~~ee~~|–––<br>~~GG~~<br>~~ee~~|||
|Qgs2<br>~~a ~~<br>~~es~~<br>~~es~~|Post-Vth Gate-to-Source Charge<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.7<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~a~~<br>~~es~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.0<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr<br>~~a ~~<br>~~es~~|Gate Charge Overdrive<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.9<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qsw<br>~~es~~<br>~~a~~<br>~~a~~|Switch Charge (Qgs2+ Qgd)<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|7.7<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~GN~~<br>|–––<br>~~ee~~|||
|Qoss<br>~~a ~~<br>~~sO~~<br>~~a~~<br>~~es~~|Output Charge<br> ~~ee~~<br>~~sO~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~sO~~<br>~~ee~~|11<br>~~ee~~<br>~~ee~~<br>~~sO~~<br>~~GN~~<br>~~ee~~|–––<br>~~ee~~<br>~~sO~~|nC<br>~~sO~~|VDS= 16V, VGS= 0V<br>~~sO~~<br>@|
|td(on)<br>~~a~~<br>~~es~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~|13<br>~~GN~~<br>~~ee~~|–––|ns|Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>ID= 17A<br>@|
|tr<br>~~a ~~<br>~~es~~<br>~~es~~|Rise Time<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~|41<br>~~GN~~<br>~~ee~~<br>~~ee~~|–––|||
|td(off)<br> <br>~~es~~<br>~~a~~<br>~~es~~|Turn-Off Delay Time<br> ~~ee ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>~~ee~~|16<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~a ~~<br>~~es~~<br>~~es~~|Fall Time<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.7<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~es~~<br>~~a~~<br>~~es~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2130<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ = 1.0MHz|
|Coss<br>~~a ~~<br>~~es~~|Output Capacitance<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~|450<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~es~~<br>~~a ~~|Reverse Transfer Capacitance<br> ~~ee~~|–––<br>~~ee~~<br>~~ee~~|220<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||



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1000<br>VGS<br>TOP           10V<br>9.0V<br>7.0V FEE Ete<br>5.0V<br>4.5V<br>4.0V rit<br>3.5V<br>BOTTOM 3.0V —<br>100<br>Wo.<br>3.0V<br>G/ 7.<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>10 A HTME Fl<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>FyEEC<br>ee ee a ee<br>100 TJ = 175°C<br>10<br>PT VER EE Ey I<br>1 TJ = 25°C<br>VDS = 15V<br>≤60µs PULSE WIDTH<br>0.1 r PL e pe,<br>0 1 2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>9.0V<br>a<br>7.0V<br>5.0V<br>4.5V<br>4.0V 57a aml<br>100 3.5V<br>BOTTOM 3.0V eal<br>3.0V<br>fe A al<br>10<br>≤60µs PULSE WIDTH<br>Tj = 175°C<br>1 CITLUI<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 42A<br>VGS = 10V<br>1.5<br>1.0 4<br>0.5 HPi L HTT<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 6.0<br>VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 17A<br>Crss    = Cgd  5.0 VDS= 24V<br>Coss   = Cds + Cgd VDS= 15V<br>sy Ciss 4.0<br>_ el Ye<br>1000 3.0<br>Coss<br>c I F TE<br>2.0<br>Crss<br>T cratesSHSo ll © 1.0  E ARS<br>100 LEE ELL 0.0 f| i ft ft<br>1 10 100 0 5 10 15 20 25<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 10000<br>e e SS OPERATION IN THIS AREA<br>1000 LIMITED BY RDS(on)<br>100.00<br>TJ = 175°C<br>100<br>100µsec<br>10<br>10.00 VAL| RPS<br>TJ = 25°C 1msec<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>1.00 0.1<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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90 2.5<br>80<br>Limited By Package<br>E=,T TT<br>70<br>2.0<br>60<br>50 T T TAL S nel<br>a aa 1.5 ae<br>40 TT ID = 250µA .<<br>30<br>PP PTL 1.0 Hd NN]<br>20 TTT TIA a<br>10<br>0 TTI TITEL 0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10 a eae aaa ea ee el<br>0  ee 0<br>1 e D = 0.50 20 [ee] |e e eee seen<br>0.1 0.200.100.05 o n R1 R1 R2 R2 Ri (°C/W)    τi (sec)<br>- | | e e |wIT TTT τJ τ $ J e ed | E | τCτ eee 0.832       0.000221 eeaaa<br>0.020.01 MP al ee ee ee τ1 τ1 | τ2 τ2 1.058       0.001171 LEH<br>Ci= τi/Ri<br>0.01 Ci i/Ri<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>ee ee 0 2. Peak Tj = P dm x Zthjc + Tc |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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9.00<br>Vgs = 10V<br>8.00<br>TJ = 125°C<br>7.00<br>6.00<br>T = 25°C<br>J<br>5.00<br>4.00<br>10.0 20.0 30.0 40.0 50.0 60.0 70.0<br>ID, Drain Current (A)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Drain Current 

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16<br>ID = 21A<br>14<br>12 PTSHE)Ey<br>10 PINE| Et<br>TJ = 125°C<br>8 PISA Lt<br>6<br>°<br>4 +H T J  = 25 C<br>2 Zan an<br>0 PEE}TT tt<br>2 3 4 5 6 7 8 9 10<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 13.    On-Resistance vs. Gate Voltage<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>Id<br>Vds<br>50KΩ<br>12V .2µF Vgs<br>.3µF 250<br>me D.U.T. | +-VDS {on ID<br>TOP         5.4A<br>VGS Vgs(th) 200 8.0A<br>3mA<br>BOTTOM 17A<br>IG ID<br>Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr<br>~ < 150 i<br>n a V E<br>Fig 14a&b.   Basic Gate Charge Test Circuit<br>and Waveform<br>100<br>N U<br>15V<br>50<br>V(BR)DSS<br>tp VDS L DRIVER<br>R G D.U.T + 0<br>IAS - [V][DD] A 25 50 75 100 125 150 175<br>20V<br>IAS | i tp 0.01Ω CS Starting TJ , Junction Temperature (°C) S TL<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

**Fig 16.** Maximum Avalanche Energy vs. Drain Current 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —_—_ D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPlaI n eductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 -y VDD<br>ma<br>•   Re-Applied<br>Ro ( 4 •  •   Driverdv/dt controlledsame type byas RgD.U.T. Vpp +- Voltage Inductor Curent Body Diode  Forward Drop<br>•<br>D.U.T. - Device Under Test OO<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>* Veg = 5V for Logic Level Devices<br>Fig 17.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>| |<br>Fig 18a.   Switching Time Test Circuit<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>tt ‘a !<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

_P = P + P + P + P loss conduction switching drive output_ 

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [1.40 (.055)] 1.15 (.045) 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) 2.92 (.115)3X [0.55 (.022)] 0.46 (.018)<br>2.64 (.104)<br>2.54 (.100)<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE  1789<br>AS S EMB LED ON WW 19, 1997 INT E RNAT IONAL PART  NUMBER<br>IN T HE  AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 24 IN T E R N AT ION AL<br>AS S E M B L E D  ON  W W  02, 2000 R E CT IF IE R F 530S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO TeaR 902. a<br>N ote: "P " in as s em bly line 80 24 D AT E  COD EY E AR  0 =  2000<br>pos ition indicates  "L ead-F ree" ASL OT  COD ES E MB L Y < Vy[TUT0 70 W E E K  02<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL<br>R E CT IF IE R F 530S<br>L OGO TeaR P00? Abe<br>D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y P R OD U CT  (OP T ION AL )<br>L OT  COD E VyO VeO YE AR  0  =  200 0<br>W E E K  02<br>A =  AS S E M B L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

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IGBT<br>1-  GAT E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL oS a<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>Note: "P" in assembly line 7 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL -<br>RECTIFIERLOGO \ |TOREIRL3103L 7G<br>DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

(0) Repetitive rating;  pulse width limited by max. junction temperature. @ Starting TJ = 25°C, L = 0.42mH, RG = 25Ω, IAS = 17A. 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Rθ is measured at 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 6/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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