# Power MOSFET, N Channel, 30 V, 90 A, 0.009 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657610/)

**URL**: https://novapart.co/products/IRF3709PBF/power-mosfet-n-channel-30-v-90-a-0009-ohm-to-220ab
**SKU**: IRF3709PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6790
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 120W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 120W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.009ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 0.009ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657610/)

PD - 95495 

IRF3709PbF IRF3709SPbF IRF3709LPBF 

## **SMPS MOSFET** 

## **Applications** 

|**SMPS MOSFET**|IRF3709SPbF<br>IRF3709LPBF|
|---|---|
||HEXFET<br>Power MOSFET<br>®|
|**VDSS**<br>**RDS(on) max**<br>**ID**<br>**30V**<br>**9.0m**Ω<br>**90A**<br>Pf<br>a ee||
|||
|“~|$. ¢N|
|TO-220AB<br>IRF3709|D2Pak<br>IRF3709S<br>TO-262<br>IRF3709L|



> e High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use . High Frequency Buck  Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on  Immunity Lead-Free **Benefits** ; 

## **Benefits** 

Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS 

Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

a **Symbol Parameter Max. Units** ~~Rs~~ VDS ~~QO~~ Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20                                   V ~~eeDO~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90 ~~Rs©~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A IDM Pulsed Drain Current 360 ~~es ee eee ee H—_____}en~~ PD @TC = 25°C Maximum Power Dissi ~~_____@~~ pation ~~©~~ 120 W ~~©~~ PD @TA = 25°C Maximum Power Dissipation 3.1 W Linear Deratin ~~a~~ g Factor                                                                    0.96 mW/°C ~~es~~ TJ , TSTG Junction and Storage Temperature Range -55  to + 150 °C 

## **Thermal Resistance** 

|a<br>es|**Parameter**<br>nD|**Typ.**<br>nD|**Max.**<br>nD|**Units**|
|---|---|---|---|---|
|RθJC<br>es|Junction-to-Case<br>nD|–––<br>nD|1.04<br>nD|°C/W|
|RθCS<br>es<br>||Case-to-Sink, Flat, Greased Surface<br>nD<br>||0.50<br>nD<br>||–––<br>nD<br>|||
|RθJA<br>|<br>es|Junction-to-Ambient<br>|<br>eK<br>©|–––<br>|<br>eK<br>©|62<br>|<br>eK||
|RθJA<br>es|Junction-to-Ambient (PCB  mount)<br>eK<br>©|–––<br>eK<br>©|40<br>eK||



Notes oO) hrough  are on page 11 © 

www.irf.com 

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07/01/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Static @ TJ = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|
|---|---|---|
||V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>VGS(th)<br>IGSS<br>IDSS<br>RDS(on)|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>JBreakdown Voltage Temp. Coefficient –––    0.029    –––     V/°C    Reference to 25°C, ID= 1mA<br>–––<br>6.4<br>9.0<br>VGS= 10V, ID= 15A<br>–––<br>7.4<br>10.5<br>VGS= 4.5V, ID= 12A<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 24V, VGS= 0V<br>–––<br>–––<br>100<br>VDS= 24V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 16V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -16V<br>Drain-to-Source Leakage Current<br>Static Drain-to-Source On-Resistance<br>mΩ<br>es<br>rees ts<br>es<br>rs<br>~~Ss es ns~~<br>~~es~~<br>~~GG~~<br>~~LE~~<br>ft<br>~~ns~~<br>~~GO~~<br>~~SE~~<br>~~**a**~~<br>~~Se~~<br>ee|
|**Dynamic @ T**||**Dynamic @ TJ = 25°C (unless otherwise specified)**|
||**Symbol**<br>gfs|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>Forward Transconductance<br>53<br>–––<br>–––<br>S<br>VDS= 15V, ID= 30A<br>es<br>ee ee<br>Re|
|ns<br>Qg<br>Total Gate Charge<br>–––<br>27<br>41                ID= 15A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>6.7<br>–––<br>nC<br>VDS= 16V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>9.7<br>–––<br>VGS= 5.0V<br>Qoss<br>Output Gate Charge<br>–––<br>22<br>–––<br>VGS= 0V, VDS= 10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>11<br>–––<br>VDD= 15V<br>tr<br>Rise Time<br>–––<br>171<br>–––<br>ID= 30A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>21<br>–––<br>RG= 1.8Ω<br>tf<br>Fall Time<br>–––<br>9.2<br>–––<br>VGS= 4.5V<br>Ciss<br>Input Capacitance<br>–––<br>2672<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>1064<br>–––<br>pF<br>VDS= 16V<br>~~Po—S~~<br>aa<br>®<br>eeee<br>Re<br>ae<br>ee<br>a<br>ee ee es ee<br>®<br>Re<br>a|||
||Crss|Reverse Transfer Capacitance<br>–––<br>109<br>–––<br>ƒ = 1.0MHz|



## **Avalanche Characteristics** 

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Symbol Parameter Typ. Max. Units<br>rea<br>EAS Single Pulse Avalanche Energy ––– 382 mJ<br>es en<br>Rs IAR ©a Avalanche Current ––– 30 A<br>Diode Characteristics<br>Symbol Parameter Min. Typ. Max. Units Conditions<br>IS RD Continuous Source Current ––– ––– GD 90 MOSFET symbol D<br>(Body Diode) showing  the<br>ISM Pulsed Source Current ––– ––– 360 integral reverse G<br>— (Body Diode)  , p-n junction diode. is S<br>— ow rE<br>VSD Diode Forward Voltage ––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V<br>Ee | ––– | 0.82 CT ––– TJ = 125°C, IS = 30A, VGS = 0V  @<br>trr ss Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V<br>Qrr es Reverse Recovery Charge  es ––– 46 69 nC di/dt = 100A/µs @<br>trr es Reverse Recovery Time ee ––– es 48 ee 72 ns TJ = 125°C, IF = 30A, VR=15V<br>Qrr Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs<br>2 www.irf.com<br>**----- End of picture text -----**<br>


## **Diode Characteristics** 

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 1000<br>VGS<br>TOP 15V<br>10V<br>7.0V<br>5.5V<br>4.5V<br>4.0V<br>3.5V tl =<br>BOTTOM2.7V2.7V<br> 100<br>2.7V<br>ey 260 ee<br> 10 2a<br>a | |<br>Timeime HM 20µs PULSE WIDTHT  = 150JT  = 150JJ °CC<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>Fig 2.   Typical Output Characteristics<br>2.0<br>IDD = 90A<br>Pee EEE<br>1.5<br>a<br>Tecan<br>1.0<br>ape cae cae<br>0.5 TTTEEEEEE EEE<br>0.0 C U VGSGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJJ (  C)°°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>7.0V 7.0V<br>5.5V 5.5V<br>4.5V 4.5V<br>4.0V 4.0V<br>3.5V TL A 3.5V tl =<br>BOTTOM2.7V BOTTOM2.7V2.7V<br> 100  100<br>2.7V<br>2.7V<br> Avaiilll a ll ey 260 ee<br> 10 a i l  10 2a<br>a | | a | |<br>Time M 20µs PULSE WIDTHT  = 25J °C Timeime HM 20µs PULSE WIDTHT  = 150JT  = 150JJ °CC<br> 1  1<br>0.1  1  10  100 0.1  1  10<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.0<br>IDD = 90A<br>a====—=—-—=— Pee EEE<br>T  = 25  CJ °<br>1.5<br>aS a<br>°<br>et T  = 150  CJ Tecan<br> 100 1.0<br>FTA [rt ts ape cae cae<br>PREP RE 0.5<br>pie e yy yy ye TTTEEEEEE EEE<br>V      = 15VDS<br> 10 Pi ty 20µs PULSE WIDTH 0.0 C U VGSGS = 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJJ (  C)°°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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4000 VGS = 0V, f = 1MHz 6 ID = 30A VDS= 24V<br>7] CCissrss == CCgsgd + Cgd , C      SHORTEDds 5 4 VVDSDS== 15V 6V TO<br>Coss = Cds + Cgd<br>3000<br>Ciss 4<br>S PST ) 6 EEE EH<br>Tr COCCI AAA<br>2000 3<br>2<br>a C a oss Pert<br>1000<br>b E FOV<br>1<br>Scomstim TELE<br>0 a Crss lll — 0 EARZeeREEEESEE<br> 1  10  100 0 5 10 15 20 25 30<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br> 100 T  = 150  CJJ °  1000<br>10us<br> 10 2  100 pe RTRs CTT<br>100us<br>T  = 25  CJJ ° 1ms<br> 1 py  10 PR S 10ms it<br> T TCJ = 25  C= 150  C° °<br>0.1 Pe V      = 0 V GSGS  1 ee  Single Pulse<br>0.2 0.8 1.4 2.0 2.6  1  10  100<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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 1000<br> 100 T  = 150  CJJ °<br> 10 2<br>T  = 25  CJJ °<br> 1<br>py<br>Pe V      = 0 V GSGS<br>0.1<br>0.2 0.8 1.4 2.0 2.6<br>V     ,Source-to-Drain Voltage (V)SDSD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>| | | | Yes Rp )<br>80<br>Pel | | | Ves D.U.T.<br>ee oe Re b - Voo<br>60<br>CEPPSSET i<br>≤ 1<br>uty Factor ≤ 0.1 %<br>40<br>Pi Tt; tT tT Tt | iN Fig 10a.   Switching Time Test Circuit :<br>20 Pi tt yt TT | TN VDS<br>90%<br>pit tt tt | tN )<br>0 Pte; TTT Tt |<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>ee<br>Pe ee<br> 1 En<br>D = 0.50<br>0.20<br>EeeeniieS 0.10  Seni mene PDM ee<br>0.1 a a<br>— 0.05 a Ss. t1<br>SSS eS SS eee<br>0.02 SINGLE PULSE t2<br>0.01 (THERMAL RESPONSE)<br>Notes:<br>anne 0 ee 1. Duty factor D = t   / t1 2<br>el l 2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1200<br>15V ID<br>TT [Td.]<br>TOP 13A<br>1000 19A<br>BOTTOM 30A<br>VDS L DRIVER aVe ee<br>800<br>RG D.U.T + FYELCELCELE<br>- [V][DD]<br>IAS A 600<br>20V SSNSESEEEE<br>tp 0.01Ω<br>ae C e<br>400 PNIN ETE<br>Fig 12a.   Unclamped Inductive Test Circuit RONNCTEL<br>PANN TTET<br>200<br>~ tp V(BR)DSS oSPSS ST<br>0<br>25 50 75 100 125 150<br>/ Starting T  , Junction TemperatureJ (  C)°<br>/ \<br>Fig 12c.   Maximum Avalanche Energy<br>/ \ Vs. Drain Current<br>IAS<br>Fig 12b.   Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>+<br>vee P= en D.U.T. -VDS<br>QGS QGD<br>VGS<br>V ake G “— _ 3mA (3<br>Cal<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149)<br>2.87 (.113) 10.29 (.405) 3.54 (.139)<br>2.62 (.103)<br>- A -<br>7 g<br>6.47 (.255)<br>4 6.10 (.240)<br>maey<br>15.24 (.600)<br>14.84 (.584)<br>1.15 (.045)<br>     MIN<br>1     2    3<br>| [a]<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>|i<br>3X [0.93 (.037)]<br>0.69 (.027)<br>3X [1.40 (.055)]<br>1.15 (.045) 0.36  (.014)        M    B   A   M<br>[tt 2.54 (.100) -<br>2X<br>NOTES:<br>**----- End of picture text -----**<br>


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- B -<br>4.69 (.185)<br>4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>=<br>LEAD ASSIGNMENTS<br>LEAD ASSIGNMENTS<br>HEXFET       1 - GATE  IGBTs, CoPACK<br>1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>4- DRAIN 4- COLLECTOR<br>3X [0.55 (.022)]<br>0.46 (.018)<br>2.92 (.115)<br>T<br>2.64 (.104)<br>-<br>**----- End of picture text -----**<br>


1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMP L E : T H IS  IS  AN IR F 1010<br>L OT  CODE  1789<br>P AR T  NU MB E R<br>AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL<br>IN T H E  AS S E MB L Y L INE  "C" R E CT IF IE R<br>L OGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E  CODE<br>YE AR  7 =  1997<br>AS S E MB L Y<br>L OT  CODE WE E K  19<br>L INE  C<br>**----- End of picture text -----**<br>


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## Dimensions are shown in millimeters (inches) 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE AS SEMBLY LINE "L" LOGO IeaR 002L<br>80 24 DATE CODE<br>Note: "P" in assembly lineposition indicates "Lead-Free" ASSEMBLYLOT CODE O T cat o ooy YEAR 0 =  2000WEEK 02LINE L<br>**----- End of picture text -----**<br>


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PART  NUMBER<br>INT ERNATIONAL |<br>RECTIFIER F530S<br>LOGO TeaRP002A<br>80 24 DATE CODE<br>ASSEMBLYLOT  CODE WuWG Lb YEAR 0 =  2000P =  DESIGNAT ES LEAD-FREEPRODUCT (OPTIONAL)<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS  IS  AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO oYIRIRL3103L719C<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## OR 

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PART NUMBER<br>INTERNATIONAL oS<br>RECTIFIER IRL3103L<br>LOGO IGIRP719A<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>(ml lL ; oa<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>— TA<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) aie<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB. 3<br>5 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by 6) Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ® This is only applied to TO-220AB package 

0) Starting TJ = 25°C, L = 0.85mH RG = 25Ω, IAS = 30A. 

® This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. © Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF3709PBF/power-mosfet-n-channel-30-v-90-a-0009-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf3709pbf/mosfet-n-30v-90a-to-220/dp/8657610)
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