# Power MOSFET, N Channel, 30 V, 62 A, 0.012 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648158/)

**URL**: https://novapart.co/products/IRF3708PBF/power-mosfet-n-channel-30-v-62-a-0012-ohm-to-220ab
**SKU**: IRF3708PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5120
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 87W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 87W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.012ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 62A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648158/)

## IRF3708PbF IRF3708SPbF IRF3708LPbF 

## **SMPS MOSFET** 

## **Applications** 

## HEXFET ® Power MOSFET 

High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|
|---|---|---|
|**VDSS**|**RDS(on) max**|**ID**|
|**30V**|**12m**Ω|**62A**|



High Frequency Buck Converters for Computer Processor Power Lead-Free 

## **Benefits** 

Ultra-Low Gate Impedance 

Very Low RDS(on) at 4.5V VGS 

Fully Characterized Avalanche Voltage and Current 

|“~|$.|”a|
|---|---|---|
|TO-220AB|D2Pak|TO-262|
|IRF3708|IRF3708S|IRF3708L|



## **Absolute Maximum Ratings** 

|**Symbol**<br>es|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>es<br>DO<br>~~Rs~~|Drain-Source Voltage<br>DO<br>~~I~~|30<br>DO<br>~~(~~|V<br>DO|
|VGS<br>~~Rs~~<br>~~Rs~~|GSGate-to-Source Voltage<br>±12                                   V<br>~~I~~<br><br>~~e~~|±12                                   V<br>~~(~~<br><br>~~ae~~|±12                                   V<br><br>~~ae~~|
|ID@ TC= 25°C<br>~~Rs~~<br>~~Rs~~~~**e**~~|Continuous Drain Current, VGS@ 10V<br>~~I~~<br>~~**e**e~~<br>~~e~~|62<br>~~(~~<br>~~e~~<br>~~ae~~|A<br>~~e~~<br>~~ae~~|
|ID@ TC= 70°C<br>~~Rs~~~~**e**~~|Continuous Drain Current, VGS@ 10V<br>~~**e**e~~<br>~~e~~|52<br>~~e~~<br>~~ae~~||
|IDM<br>~~**e**~~|Pulsed Drain Current<br>~~**e**e~~<br>~~e~~<br>~~©~~|248<br>~~e~~<br>~~ae~~||
|PD@TC= 25°C<br>~~eS~~|Maximum Power Dissipation<br>~~e~~<br>~~eS~~<br>~~©~~|87<br>~~ae~~<br>~~eS~~|W<br>~~ae~~<br>~~eS~~|
|PD@TC= 70°C<br>~~©~~<br>~~Re~~|Maximum Power Dissipation<br>~~©~~<br>~~©~~|61<br>~~©~~|W<br>~~©~~|
|Linear Deratin<br>~~Re~~<br>~~es~~|Linear DeratingFactor                                                                     0.58                               W/°C<br>~~I~~|Factor                                                                     0.58                               W/°C<br>~~(~~|Factor                                                                     0.58                               W/°C|
|TJ, TSTG<br>~~Re~~<br>~~es~~|Junction and Storage Temperature Range<br>~~I~~|-55  to + 175<br>~~(~~|°C|



## **Thermal Resistance** 

|es|||||
|---|---|---|---|---|
|es<br>rs|**Parameter**<br>nDI|**Typ.**<br>I|**Max.**|**Units**|
|RθJC<br>es<br>rs<br>OO|Junction-to-Case<br>nDI<br>OO<br>————————|–––<br>I<br>————————|1.73<br>————————|°C/W|
|RθCS<br>rs<br>OO<br>a|Case-to-Sink, Flat, Greased Surface<br>nDI<br>OO<br>————————<br>a|0.50<br>I<br>————————|–––<br>————————||
|RθJA<br>OO<br>a|Junction-to-Ambient<br>OO<br>————————<br>a|–––<br>————————|62<br>————————||
|RθJA<br>OO<br>a|Junction-to-Ambient (PCB  mount)<br>OO<br>————————<br>a|–––<br>————————|40<br>————————||



When mounted on 1" square PCB (FR-4 or G-10 Material) . 

For recommended footprint and soldering techniques refer to application note #AN-994 

Notes oO) hrough ® are on page 10 

www.irf.com 

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## IRF3708/S/LPbF 

**Static @ TJ = 25°C (unless otherwise specified)** 

|IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.028    –––    V/°C   Reference to 25°C, ID= 1mA<br>–––<br>8<br>12.0<br>VGS= 10V, ID= 15A<br>–––<br>9.5<br>13.5 mΩ<br>VGS= 4.5V, ID= 12A<br>–––<br>14.5<br>29<br>VGS= 2.8V, ID= 7.5A<br>VGS(th)<br>Gate Threshold Voltage<br>0.6<br>–––<br>2.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 24V, VGS= 0V<br>–––<br>–––<br>100<br>VDS= 24V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 12V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -12V<br>sD<br>GG(<br>rs<br>~~GsGs (~~<br>~~GO~~<br>~~eG~~<br>~~**|**~~—|—<br>~~| fT~~<br>~~@~~<br>~~GD~~<br>GO~~GG~~<br>~~a~~<br>~~| EE~~<br>~~|~~<br>~~Ppo—“Csts—Ss—STTCC~~<br>US|
|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>49<br>–––<br>–––<br>S<br>VDS= 15V, ID= 50A<br>ee<br>ee ee<br>es|
|Qg<br>Total Gate Charge<br>–––<br>24<br>–––                ID= 24.8A<br>~~a~~|
|Qgs<br>Gate-to-Source Charge<br>–––<br>6.7<br>–––<br>nC<br>VDS= 15V<br>~~ee~~|
|ns<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>5.8<br>–––<br>VGS= 4.5V<br>Qoss<br>Output Gate Charge<br>–––<br>14<br>21<br>VGS= 0V, ID= 24.8A, VDS= 15V<br>td(on)<br>Turn-On Delay Time<br>–––<br>7.2<br>–––<br>VDD= 15V<br>tr<br>Rise Time<br>–––<br>50<br>–––<br>ID= 24.8A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>17.6<br>–––<br>RG= 0.6Ω<br>tf<br>Fall Time<br>–––<br>3.7<br>–––<br>VGS= 4.5V<br>Ciss<br>Input Capacitance<br>–––<br>2417<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>707<br>–––<br>VDS= 15V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>52<br>–––<br>pF<br>ƒ = 1.0MHz<br>a<br>©)<br>Psee<br>esee<br>ee**ee**<br>Ps<br>~~a a~~<br>es|
|**Avalanche Characteristics**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>213<br>mJ<br>IAR<br>Avalanche Current<br>–––<br>62<br>A<br>eser<br>I<br>i|



**Diode Characteristics** 

|S<br>D<br>G<br>62<br>248<br>VSD<br>Diode Forward Voltage<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>–––<br>0.88<br>1.3<br>V<br>TJ= 25°C, IS= 31A, VGS= 0V<br>–––<br>0.80<br>–––<br>TJ= 125°C, IS= 31A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>41<br>62<br>ns<br>TJ= 25°C, IF= 31A, VR=20V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>64<br>96<br>nC<br>di/dt = 100A/µs<br>trr<br>Reverse Recovery Time<br>–––<br>43<br>65<br>ns<br>TJ= 125°C, IF= 31A, VR=20V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>70<br>105<br>nC<br>di/dt = 100A/µs<br>esee<br>|<br>|<br>@<br>ee<br>Rs<br>©<br>Se|
|---|



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## IRF3708/S/LPbF 

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1000<br>VGS<br>TOP          10.0V<br>a a                   5.0V<br>ee ee                   4.5V H<br>                  4.0V<br>Lt | A eer                   3.5V |<br>100 AA                   3.3V |<br>                  3.0V<br>Er BOTTOM    2.7V 4<br>a ill 2.7V<br>my A OL<br>Meh FH<br>10 ’ ZO<br>SSS ee eee<br>eT ee |<br>er ee ee ee<br>20µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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 1000<br>a SC<br>—————a<br>ee ee<br>a ee ee ee<br>PT| T  = 25  CJ Pf ° ZZff| J}7pL |<br> 100 ee T  = 175  CJ °<br>a ee 7 a —<br> ,<br>A<br>a ee ee<br>Pf ft | |<br>V      = 15VDS<br>20µs PULSE WIDTH<br> 10<br>2.0 3.0 4.0 5.0 6.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>a a TOP          10.0V<br>                  5.0V<br>Pt tT                   4.5V I<br>                  4.0V<br>a eeanne                   3.5V |<br>100 i                   3.3V<br>aaa -=aeee                   3.0VBOTTOM    2.7V i<br>2.7V<br>/— ae<br>Y | | gar | re<br>Vj<br>| |g oe |<br>10 ge TE<br>Pat<br>a ee |<br>PT EAT enn<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 62A<br>Po PTTTT<br>E ET<br>2.0 ETT<br>van<br>TET<br>1.5<br>a |<br>ELT eT<br>1.0 LI| LH<br>TET<br>| tT<br>0.5<br>Le<br>VGS= 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF3708/S/LPbF 

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**----- Start of picture text -----**<br>
3500<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>Crss = Cgd<br>2800 Poa Coss = Cds + Cgd<br>Ciss<br>a<br>2100<br>ll<br>EEEN<br>1400 ell<br>Coss<br>e t |<br>a<br>700<br>a<br>a C ee rss ll<br>0<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br> 100 T  = 175  CJ ° | Le T | |<br>pa sses<br>T  = 25  CJ °<br> 10 _——ny 4 )<br>5<br> 1<br>+<br>—he—————— — V      = 0 V GS<br>0.1<br>0.2 0.8 1.4 2.0 2.6<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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10<br>ID = 24.8A<br>VDS = 15V<br>8 Sp PT tty speKL<br>Pt tT | tT AL |<br>6<br>Pt tT tT | et<br>Pi tT tT tTAe<br>4 PEEPi yA<br>tA<br>2<br>| pte<br>0 PAViti| tt {tit t {i{|<br>0 10 20 30 40 50<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>i ed ok  tc eer cs ek ee 10us |<br> 100 FILA<br>100us<br>See r<br>Tt Baill<br>ce Ca<br>1ms<br> 10 e a<br>ee ee 10ms<br> T TCJ = 25  C= 175  C° °<br>e  Single Pulse s 1et aille<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


## **Fig 8.** Maximum Safe Operating Area 

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## IRF3708/S/LPbF 

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70 a Bs<br>60 REP Ves sur<br>SEE x ur<br>50 PINE | -<br>FEES EEE<br>40 ase }} tov ≤ 1<br>HEP NSE Pues ≤ 0.1 %<br>30 a oa Fare :<br>HEP ren<br>Fig 10a.   Switching Time Test Circuit<br>20 ee<br>10 PEPEaPEPE NNerr V90%DS [<br>a Err ry ry |<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° 10% . \\<br>VGS NV\ re >| mle ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>po<br>a ee<br>a a ee ee eee lll<br>UTE<br> 1 p D = 0.50 mmemrrrea T T<br>0.20<br>_— ee ——eta1apT eeTT<br>0.10<br>0.05 PDM<br>0.1 r feei| r iil<br>0.02 SINGLE PULSE t1<br>S 0.01 e (THERMAL RESPONSE) at<br>aa a a Oe OeOe ee Notes: eeee t2<br>1. Duty factor D = t   / t1 2<br>HN 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRF3708/S/LPbF 

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0.025<br>0.017<br>P t} 0.015 ODD<br>0.020 P E TE<br>0.013<br>0.015<br>VGS = 4.5V 0.011<br>ve n BUSnnnn<br>0.010 ID = 31A<br>0.009<br>VGS = 10V<br>0.005 eaei | 0.007 (NTTeee<br>0 50 100 150 200 250 300 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>ID , Drain Current ( A ) VGS, Gate -to -Source Voltage  (V)<br> )<br>ΩRDS ( on ) , Drain-to-Source On Resistance (<br>)<br>ΩRDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance Vs. Drain Current 

**Fig 13.** On-Resistance Vs. Gate Voltage 

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Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>.3µF QGS QGD<br>D.U.T. +-VDS-VDSVDSDS VGG<br>VGSGS<br>3mA Charge<br>IGG IDD<br>Current Sampling   Gate Charge Test CircuitResistors Resistors<br>**----- End of picture text -----**<br>


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D.U.T. +-VDS-VDSVDSDS VGG 600 ID<br>VGSGS TOP 10A<br>3mA Charge 20.7A<br>480 BOTTOM 24.8A<br>IGG IDD<br>Fig 14a&b. Current Sampling   Gate Charge Test CircuitResistors 360 P N<br>and Waveform<br>TONE<br>240 GaaNGeeeeeee<br>NONE<br>15V<br>120 PSS ENTE<br>V(BR)DSS<br>tp VDS L DRIVER<br>_ ASST<br>R G D.U.T + 0<br>I AS | ae 20V tp IAS 0.01Ω - [V][DD] A 25 Pape Starting T  , Junction Temperature50 J 75 SBS 100 125 SSE 150(  C)° 175<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

6 

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## IRF3708/S/LPbF 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO oa<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>ar 1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| a 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X AIP [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M _ 2.92 (.115)<br>2.64 (.104)<br>CF 2.54 (.100) | T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF 1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INTE RNAT IONAL PART  NUMBER<br>IN THE AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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## IRF3708/S/LPbF 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  8 02 4 IN T E R N AT ION AL —<br>AS S E M B L E D  O N  W W  0 2, 2 00 0 R E CT IF IE R F 53 0 S<br>IN  T H E  AS S E M B L Y L IN E  "L " L OGO IER 0021<br>80 24 D AT E  CO D E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E M B L Y v J U y u7 U Y E AR  0 =W E E K  02  2 00 0<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT IO N AL SY<br>R E CT IF IE R F 530 S<br>L OGO Té2RP002A<br>80 24 D AT E  CO DE<br>AS S E M B L Y LJ u P  =  D E S IGN AT E S  L E AD -F R E EP R OD U CT  (OP T IO N AL )<br>L OT  CO DE vw Qj =O Y E AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y  S IT E  CO D E<br>**----- End of picture text -----**<br>


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## IRF3708/S/LPbF 

## TO-262 Package Outline 

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GBT<br>1-  GAT E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL a<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IRIRLS103L719<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL <——V<br>RECTIFIER IRL3103L<br>LOGO T@RP719A<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

9 

## IRF3708/S/LPbF 

## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

**==> picture [253 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>a 1.65 (.065) sy 11.40 (.449) 15.42 (.609) i 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>LIEN 1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) _ 4 IP<br>| 330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) + 4<br>aa) 3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.7 mH @ RG = 25Ω, IAS = 24.8 A. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

This is only applied to TO-220AB package 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF3708PBF/power-mosfet-n-channel-30-v-62-a-0012-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf3708pbf/mosfet-n-30v-62a-to-220/dp/8648158)
---

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