# Power MOSFET, N Channel, 30 V, 62 A, 0.0125 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8648140/)

**URL**: https://novapart.co/products/IRF3707SPBF/power-mosfet-n-channel-30-v-62-a-00125-ohm-to-263
**SKU**: IRF3707SPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8250
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 87W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 62A |
| Drain Source On State Resistance | 0.0125ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648140/)

PD - 93937B 

IRF3707 IRF3707S IRF3707L 

## **SMPS MOSFET** 

## **Applications** 

HEXFET[®] Power MOSFET 

High Frequency DC-DC  Isolated Converters  with Synchronous Rectification for Telecom and Industrial use 

|**VDSS**|**RDS(on) max**|**ID**|
|---|---|---|
|**30V**|**12.5m**Ω|**62A**|



High Frequency Buck Converters for Computer Processor Power 

## **Benefits** 

Ultra-Low Gate Impedance 

Very Low RDS(on) 

Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRF3707 IRF3707S IRF3707L 

## **Absolute Maximum Ratings** 

|**Symbol**<br>ee|**Parameter**<br>|**Max.**<br>|**Units**<br>|
|---|---|---|---|
|VDS<br>eea|Drain-Source Voltage<br>a|30<br>a|V<br>a|
|VGS<br>a<br>~~ae~~|GSGate-to-Source Voltage<br>± 20                                   V<br>a<br>~~ae~~|± 20                                   V<br>a<br>~~ae~~|± 20                                   V<br>a<br>~~ae~~|
|ID@ TC= 25°C<br>~~QO~~<br>~~ae~~|Continuous Drain Current, VGS@ 10V<br>~~QO~~<br>~~ae~~|62<br>~~QO~~<br>~~ae~~|A<br>~~ae~~<br>|
|ID@ TC= 70°C<br>~~ae~~<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>~~ae~~<br>|52<br>~~ae~~<br>||
|IDM<br>~~ae~~<br>~~ee~~|Pulsed Drain Current<br>~~ae~~<br>|248<br>~~ae~~<br>||
|PD@TC= 25°C<br>~~ae~~<br>~~ee>~~|Maximum Power Dissipation<br>~~ae~~<br>~~>~~|87<br>~~ae~~<br>~~>~~|W<br>~~ae~~<br>~~>~~|
|PD@TC= 70°C<br>~~a~~|Maximum Power Dissipation<br>~~a~~|61<br>~~a~~|W<br>~~a~~|
|Linear Deratin<br>~~>~~|Linear DeratingFactor                                                                     0.59                              mW/°C<br>~~>~~<br>~~ot~~|Factor                                                                     0.59                              mW/°C<br>~~>~~<br>~~ot~~|Factor                                                                     0.59                              mW/°C<br>~~>~~<br>~~ot~~|
|TJ, TSTG<br>~~A~~|Junction and Storage Temperature Range<br>~~A~~|-55  to + 175<br>~~A~~|°C<br>~~A~~|



|es<br>———————|**Parameter**<br>~~es~~<br>———————|**Typ.**<br>~~es~~|**Max.**<br>~~es~~<br>ae|**Units**<br>~~es~~<br>ae|
|---|---|---|---|---|
|RθJC<br>es<br>~~a~~<br>———————|Junction-to-Case<br>~~es~~<br>~~a~~<br>———————|–––<br>~~es~~<br>~~a~~|1.73<br>~~es~~<br>~~a~~<br>ae|°C/W<br>~~es~~<br>ae|
|RθCS<br>~~a~~<br>———————|Case-to-Sink, Flat, Greased Surface<br>~~a~~<br>———————|0.50<br>~~a~~|–––<br>~~a~~<br>ae||
|RθJA<br>———————|Junction-to-Ambient<br>———————|–––|62<br>ae||
|RθJA<br>———————|Junction-to-Ambient (PCB  mount)*<br>———————|–––|40<br>ae||



*   When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Notes hrough are on page 10 

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8/22/00 

## IRF3707/3707S/3707L 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.027    –––     V/°C   Reference to 25°C, ID= 1mA<br>–––<br>9.0<br>12.5<br>VGS= 10V, ID= 15A<br>–––<br>12.6<br>17<br>VGS= 4.5V, ID= 12A<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 24V, VGS= 0V<br>–––<br>–––<br>100<br>VDS= 24V, VGS= 0V, TJ= 125°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 16V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -16V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>mΩ<br>rs<br>~~rs rs re es~~<br>~~DG~~<br>~~es~~<br>~~ss~~<br>~~Be~~<br>===<br>~~es~~<br>~~es~~<br>~~|~~<br>~~__~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~es~~<br>ns Ge|
|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>37<br>–––<br>–––<br>S<br>VDS= 15V, ID= 49.6A<br>ee<br>ee ee<br>ee<br>es|
|ns<br>Qg<br>Total Gate Charge<br>–––<br>19<br>–––                ID= 24.8A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>8.2<br>–––<br>nC<br>VDS= 15V<br>Qgd<br>Gate-to-Drain ("Miller") Charge<br>–––<br>6.3<br>–––<br>VGS= 4.5V<br>Qoss<br>Output Gate Charge<br>–––<br>18<br>27<br>VGS= 0V, VDS= 15V<br>td(on)<br>Turn-On Delay Time<br>–––<br>8.5<br>–––<br>VDD= 15V<br>tr<br>Rise Time<br>–––<br>78<br>–––<br>ID= 24.8A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>11.8<br>–––<br>RG= 1.8Ω<br>tf<br>Fall Time<br>–––<br>3.3<br>–––<br>VGS= 4.5V<br>Ciss<br>Input Capacitance<br>–––<br>1990<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>707<br>–––<br>VDS= 15V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>50<br>–––<br>pF<br>ƒ = 1.0MHz<br>~~a~~<br>~~ee~~<br>ed<br>~~a~~<br>®<br>eees<br>ee<br>aes<br>ee<br>eeee<br>ee ee<br>aes<br>~~ee~~<br>~~Se es~~<br>ed<br>~~a ~~|



|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>EAS<br>Single Pulse Avalanche Energy<br>–––<br>213<br>IAR<br>Avalanche Current<br>–––<br>62<br>**Avalanche Characteristics**<br> ee<br>oo<br>es||**Units**<br>mJ<br>A|**Units**<br>mJ<br>A|
|---|---|---|---|
|**Diode Characteristics**||||
|G<br>62<br>248<br>A<br>VSD<br>Diode Forward Voltage<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max.**<br>**Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>–––<br>0.88<br>1.3<br>V<br>TJ= 25°C, IS= 31A, VGS= 0V<br>–––<br>0.8<br>–––<br>TJ= 125°C, IS= 31A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>39<br>59<br>ns<br>TJ= 25°C, IF= 31A, VR=20V<br>Qrr<br>Reverse Recovery Charge<br>–––<br>49<br>74<br>nC<br>di/dt = 100A/µs<br>trr<br>Reverse Recovery Time<br>–––<br>42<br>63<br>ns<br>TJ= 125°C, IF= 31A, VR=20V<br>nn<br>ee<br>ae<br>{|<br>———<br>eee<br>a<br>©)<br>Se|||S<br>D<br>= 0V<br>®|
|Qrr<br>Reverse Recovery Charge<br>–––<br>62<br>93<br>nC<br>di/dt = 100A/µs||||



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## IRF3707/3707S/3707L 

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1000 1000<br>VGS<br>VGS<br>TOP          10.0V<br>TOP          10.0V<br>                   9.0V<br>                   9.0V<br>                   8.0V<br>                   8.0V<br>                   7.0V<br>                   7.0V<br>PCP Ee                    6.0V eI                    6.0V<br>                   5.0V<br>100 P om                    4.5VBOTTOM   3.5V | 100 | | III eee                    5.0V                   4.5V |<br>BOTTOM  3.5V<br>3.5V<br>3.5V<br>Le irl ap” femal |<br>10 10<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 HPAIHT yy Hill 1 Saail ee alll e<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 62A<br>———————— Td<br>=e.= e T  = 25  CJ ° 2.0 HL THIT<br>q o EE HELE TET<br>1.5<br>> oan T  = 175  CJ ° ATT<br> 100<br>lee ee<br>7 - f 1.0 LLer<br>a a TLE LEE<br>A Leer<br>TTL LEE<br>0.5<br>A |<br> 10 Py Py fp V      = 15V20µs PULSE WIDTHDS | 0.0 P EALL CEET VGS = 10V<br>3.0 V     , Gate-to-Source Voltage (V)4.0GS 5.0 6.0 7.0 8.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(  C)° 140 160 180<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF3707/3707S/3707L 

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**----- Start of picture text -----**<br>
3000<br>VGS = 0V, f = 1MHz<br>Ciss = Cgs + Cgd , C      SHORTEDds<br>2500 — CCrssoss == CCgdds + Cgd<br>4<br>2000 Ciss<br>o y<br>R O LL<br>1500 PSST<br>oS<br>Coss<br>1000 P a<br>a<br>500<br>ee ll<br>Crss<br>|<br>0 ee<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 1000<br>a ee ee ee ee ee ae<br> 100<br>T  = 175  CJ °<br>ee ee 2 2 ee es<br> 10 2)<br>= = T  = 25  CJ °<br>= = ==<br> 1 —<br>—TAI——————— V      = 0 V GS<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**==> picture [198 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>ID = 24.8A<br>VDS =  15V<br>ee<br>8<br>| | | | | ||<br>6 aP| tt | PA<br>anne<br>PT a Td<br>4 ee<br>40<br>2<br>Vann<br>/<br>0 Vi |itf t<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

**==> picture [197 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on) CT<br>10us<br> 100<br>—— Se t+-E-+-H4<br>100us<br>SSS e sd<br>PRS oot<br>1ms<br> 10 Co S<br>10ms<br>ee  T TCJ = 25  C= 175  C° ° ee<br>e  Single Pulse ele e<br> 1<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


## **Fig 8.** Maximum Safe Operating Area 

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## IRF3707/3707S/3707L 

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**----- Start of picture text -----**<br>
70 a<br>60 GeeSEEeee e000<br>CORSE<br>50 ao eae<br>POTTS<br>40 eee<br>30 POPPPEP PNer<br>NT<br>20 POPP<br>PEE<br>10 See eee<br>TTT Tyrer ry<br>0<br>25 PPP 50 75 rrr 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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RD<br>VDS<br>VGS<br>D.U.T.<br>RG<br>+<br>- [V] DD<br>i 10V<br>Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>:<br>Fig 10a.   Switching Time Test Circuit<br>VDS<br>90%<br>[7<br>| |<br>|<br>10% /\ |<br>VGS aan,\ pie >| m<<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 10<br>aa aa e e a eee eee<br>a ee ee ee eee ll<br>CTA ITT<br> 1 P D = 0.50 erL<br>e 0.20 o ol ee<br>0.10<br>0.05 PDM<br>es se TIT |<br>0.1 ye? al|<br>0.02 SINGLE PULSE t1<br>So 0.01 (THERMAL RESPONSE) e<br>a ea t2<br>om | | tT ttt eT eT ee Notes: eeee<br>1. Duty factor D = t   / t1 2<br>Ah 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRF3707/3707S/3707L 

**==> picture [436 x 471] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.10 0.013<br>0.09 e e<br>0.08 VGS = 4.5V<br>0.012<br>0.07 ePI e _— |<br>0.06<br>0.05 e e ee 0.011 eT td<br>0.04 e eee ee ID = 31A<br>0.03 VGS = 10V<br>0.010<br>0.02 ko ~~<br>rT Z| =<br>0.01<br>0.00 =|e e 0.009 P Rs<br>0 50 100 150 200 250 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>ID , Drain Current ( A ) VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    On-Resistance Vs. Drain Current Fig 13.    On-Resistance Vs. Gate Voltage<br>Current Regulator<br>Same Type as D.U.T.<br>QG<br>12V _ .2µF 50KΩ VGS<br>.3µF QGS QGD<br>The D.U.T. +-VDS VG 600 ID<br>VGS TOP 10.1A<br>(x | boo P| ft | tt<br>3mA Charge 500 20.7A<br>oma Current Ae IGSampling ResistorsID | 400 SaeneeeNaeINT | ft tt BOTTOM tl ft 24.8A<br>Fig 14a&b.   Basic Gate  Charge Test circuit ENGR<br>and Waveforms aN<br>300 Pi {TX ELE LE EL<br>200 NOP UN<br>15V NNO<br>V (B R )D S S (B R )D S S 100 PSANT<br>tp VD S L DRIVER<br>K P| |) dTOSRNA<br>R G D.U .T + 0<br>/| IAS - [[VD D]] A 25 | | 50 ft | 75 ft | 100 ft USS 125 150 175<br>20 V °<br>/ \ y tp 0.01ΩΩ Starting T  , Junction TemperatureJ (  C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br> )<br>Ω<br>RDS ( on ) , Drain-to-Source On Resistance (<br>)<br>Ω<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**==> picture [213 x 75] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>V (B R )D S S (B R )D S S<br>tp VD S L DRIVER<br>K<br>R G D.U .T +<br>/| - [[VD D]]<br>IAS<br>20 V<br>I A S / \ y tp 0.01ΩΩ<br>**----- End of picture text -----**<br>


**Fig 15a&b.** Unclamped Inductive Test circuit and Waveforms 

**Fig 15c.** Maximum Avalanche Energy Vs. Drain Current 

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## IRF3707/3707S/3707L 

## TO-220AB Package Outline 

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**----- Start of picture text -----**<br>
Dimensions are shown in millimeters (inches)<br>10.54  (.415) 3.7 8 (.14 9) - B  -<br>2.87 (.1 13) 10.29  (.405) 3.5 4 (.13 9) 4.69 (.1 85)<br>2.62 (.1 03) - A  - 4.20 (.1 65) 1 .32 (.05 2)<br>1 .22 (.04 8)<br>6.47  (.255 )<br>4 6.10  (.240 )<br>15.24  (.600 )<br>14.84  (.584 )<br>1.15 (.045) LE A D  A S S IG N M E N T S<br>     M IN        1 - G A T E<br>1     2    3        2 - D R A IN<br>       3 - S O U R C E<br>       4 - D R A IN<br>1 4.09 (.5 55)<br>1 3.47 (.5 30) 4 .06 (.16 0)<br>3 .55 (.14 0)<br>3 X a [1 .4 0 (.05 5)] s 3X 0 .93  (.03 7)0 .69  (.02 7)  ania [|] 3X [0.5 5 (.0 22)] 0.4 6 (.0 18)<br>1 .1 5 (.04 5) 0.36  (.0 14)        M     B    A    M<br>2 .92 (.11 5)<br>2 .64 (.10 4)<br>oe! 2.54  (.100)<br>2X<br>N O TE S :<br>     1  D IME N S IO N IN G  &  TO LE R A N C IN G  P E R  A N S I Y 14.5M , 19 82.             3   O U TLIN E  C O N F O R M S  TO  JE D E C  O U T LIN E  T O -2 20A B .<br>     2  C O N TR O LLIN G  D IM E N S IO N  : IN C H                                                        4  H E A T S IN K  &  LE A D  M E A S U R E M E N T S  D O  N O T  IN C LU D E  B U R R S .<br>**----- End of picture text -----**<br>


## TO-220AB Part Marking Information 

E XAM PL E :   TH IS  IS   A N   IR F 1010 W ITH   AS SE M BLY LO T  C O D E  9B 1M INTE R N AT ION AL PA R T  N U M BE R 0 R E C TIFIE R IR F 1010 | LO G O 9246 9B     1M D ATE   C O D E A S SE MB LY (YYW W ) LOT     C O D E YY  =  YEA R W W =  W EE K iI 

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## IRF3707/3707S/3707L 

## D[2] Pak Package Outline 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
10.54 (.415) - B - 10.16 (.400)<br>10.29 (.405) 4.69 (.185)       REF.<br>1.40 (.055)     M AX. - A - 4.20 (.165) 1.32 (.052)1.22 (.048)<br>2<br>6.47 (.255)<br>6.18 (.243)<br>def tf FoR<br>1.78 (.070) 15.49 (.610) 2.79 (.110)<br>1.27 (.050) 1            3 14.73 (.580) 2.29 (.090)<br>5.28 (.208) 2.61 (.103)<br>4.78 (.188) 2.32 (.091)<br>fi<br>im th 1 8.89 (.350)<br>3X [1.40 (.055)] 1.39 (.055)      REF.<br>1.14 (.045) 3X [0.93 (.037)] 0.69 (.027) 0.55 (.022)0.46 (.018) 1.14 (.045)<br>5.08 (.200) 0.25 (.010)      M    B  A  M MINIMUM RECOM MENDED FOOTPRINT<br>11.43 (.450)<br>NO TES: LEAD ASSIGNMENTS 8.89 (.350)<br>     1  DIM ENSIONS AFTER SO LDER DIP.        1 - GATE<br>     2  DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.        2 - DRAIN ETT 17.78 (.700)<br>       3 - SOURCE<br>     3  CONTROLLING DIM ENSION : INCH.<br>     4  HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.<br>3.81 (.150)<br>Ag<br>2.54 (.100)<br>2.08 (.082)       2X TEE        2X<br>**----- End of picture text -----**<br>


## D[2] Pak Part Marking Information 

INTERNATIONAL PART  NUM BER RECTIFIER F530S LOGO 9246 DATE  CODE 9B      1M (YYW W ) ASSEM BLY YY  =  YEAR LOT    CODE W W   =  W EEK 

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## IRF3707/3707S/3707L 

## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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## IRF3707/3707S/3707L 

## D[2] Pak Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [264 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR R<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>ies 4/9 = 0.342 (.0135)<br>F E ED  D IRE C TIO N 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TR L<br>— “Tike 1.75 (.069) oD,<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>ae 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>F E ED  D IR E CT IO N<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>N\A o -<br>330.00 60.00 (2.362)<br>(14.173)       M IN.<br>  M AX.<br>| E<br>30.40 (1.197)<br>NO TES :       MAX.<br>1.   CO MFORM S TO  EIA-418.2.   CO NTRO LLING DIM ENSIO N: MILLIM ETER. 26.40 (1.039)24.40 (.961) IE 4<br>a 3.   DIM ENSION MEASURED @  HUB.4.   INCLUDES FLANGE DISTO RTIO N @ OUTER EDG E. 3<br>**----- End of picture text -----**<br>


## **Notes:** 

(0) Repetitive rating;  pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. This is only applied to TO-220AB package oO Starting TJ = 25°C, L = 0.7 mH ® RG = 25Ω, IAS = 24.8 A. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 **IR EUROPEAN REGIONAL CENTRE:** 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 **IR CANADA:** 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 **IR GERMANY:** Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 **IR ITALY:** Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 **IR JAPAN:** K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 **IR SOUTHEAST ASIA:** 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65  (0)838 4630 **IR TAIWAN:** 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673  Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF3707SPBF/power-mosfet-n-channel-30-v-62-a-00125-ohm-to-263)
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- [Supplier page](https://es.farnell.com/infineon/irf3707spbf/mosfet-n-30v-62a-d2-pak/dp/8648140)
---

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