# Power MOSFET, N Channel, 30 V, 210 A, 2800 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657580/)

**URL**: https://novapart.co/products/IRF3703PBF/power-mosfet-n-channel-30-v-210-a-2800-ohm-to
**SKU**: IRF3703PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1500
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rd; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 2800µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657580/)

## **SMPS MOSFET** 

## IRF3703PbF 

## **Applications** 

Synchronous Rectification Active ORing Lead-Free 

HEXFET Power MOSFET **VDSS RDS(on) max ID 30V 2.8m** Ω **210A** eeee 

## **Benefits** 

Ultra Low On-Resistance Low Gate Impedance to Reduce  Switching Losses | Fully Avalanche Rated 

TO-220AB **Absolute Maximum Ratings** ~~a~~ **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ~~ee~~ © ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A ~~aes~~ IDM Pulsed Drain Current ~~ee~~ 1000 ~~ee~~ PD @TC = 25°C Power Dissipation 230 W PD @TA = 25°C Power Dissipation 3.8 ~~sD~~ Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V ~~——————————————~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range ~~f~~ -55  to + 175 °C ~~**e** eI~~ Thermal Resistance **Parameter Typ. Max. Units** RθJC Junction-to-Case ––– 0.65 RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W RθJA Junction-to-Ambient ––– 62 

> Notes ® hrough  are on page 8 © 

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## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>30<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient –––     0.028    –––    V/°C   Reference to 25°C, ID= 1mA<br>–––<br>2.3<br>2.8<br>VGS= 10V, ID= 76A<br>–––<br>2.8<br>3.9<br>VGS= 7.0V, ID= 76A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 250µA<br>–––<br>–––<br>20<br>µA<br>VDS= 24V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 24V, VGS= 0V, TJ= 150°C<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>nA<br>VGS= -20V<br>IGSS<br>IDSS<br>Drain-to-Source Leakage Current<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>mΩ<br>rs<br>~~rs rs rs es~~<br>~~es~~<br>~~nsGn~~<br>~~es~~<br>~~GG~~<br>~~BE4~~<br>~~aeR~~<br>~~**|**~~<br>~~Se~~<br>~~rs~~<br>cere|
|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max. Units**<br> **Conditions**<br>gfs<br>Forward Transconductance<br>150<br>–––<br>–––<br>S<br>VDS= 24V, ID= 76A<br>ee<br>~~ee ee~~<br>~~es~~|
|Qg<br>Total Gate Charge<br>–––<br>209<br>–––                ID= 76A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>62<br>–––<br>nC<br>VDS= 24V<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>42<br>–––<br>VGS= 10V,<br>td(on)<br>Turn-On Delay Time<br>–––<br>18<br>–––<br>VDD= 15V, VGS= 10V<br>tr<br>Rise Time<br>–––<br>123<br>–––<br>ID= 76A<br>td(off)<br>Turn-Off Delay Time<br>–––<br>53<br>–––<br>RG= 1.8Ω<br>tf<br>Fall Time<br>–––<br>24<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>8250<br>–––<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>3000<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>290<br>–––<br>pF<br>ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>10360 –––<br>VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>3060<br>–––<br>VGS= 0V,  VDS= 24V,  ƒ = 1.0MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>2590<br>–––<br>VGS= 0V, VDS= 0V to 24V<br>ns<br>~~a~~<br>~~ee~~<br>~~**es**~~<br>~~ee~~<br>~~@~~<br>~~ee~~<br>es ee<br>~~Rs~~<br>ee~~es~~<br>~~ne~~<br>~~ee ee~~<br>@<br>es<br>a es<br>ee<br>Rs<br>a<br>ee<br>®|



## **Avalanche Characteristics** 

**Parameter Typ. Max. Units** eeee EAS Single Pulse Avalanche Energy ––– 1700 mJ eseG IAR Avalanche Current ––– 76 A Snes EAR Repetitive Avalanche Energy © ––– 23 mJ 

## **Diode Characteristics** 

||**Parameter**<br>ee|**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~dL~~<br>|–––<br>~~ee~~<br>~~dL~~<br><br>~~ee~~|–––<br>~~ee~~<br>~~dL~~<br>|210<br>~~dL~~<br>|~~dL~~<br>~~ee~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)<br>~~dL~~<br>~~ee~~|–––<br>~~dL~~<br>~~ee~~<br>~~ee~~|–––<br>~~dL~~<br>~~ee~~|1000<br>~~dL~~<br>~~ee~~|||
|VSD<br>~~ee~~<br>~~oo~~<br>~~ee~~|Diode Forward Voltage<br>~~dL~~<br><br>~~oo~~<br>~~ee~~|–––<br>~~dL~~<br><br>~~ee~~<br>~~oo~~<br>ee<br>~~ee~~|0.8<br>~~dL~~<br><br>~~oo~~<br>eeee|1.3<br>~~dL~~<br><br>~~oo~~|V<br>~~dL~~<br><br>~~oo~~|TJ= 25°C, IS= 76A, VGS= 0V<br>~~oo~~<br>~~°~~<br>®|
|trr<br>~~oo~~<br>~~ee~~|Reverse Recovery Time<br>~~oo~~<br>~~ee~~<br>~~ee~~|–––<br>~~oo~~<br>~~ee~~<br>ee<br>~~ee~~|80<br>~~oo~~<br>~~ee~~<br>eeee|120<br>~~oo~~<br>~~ee~~|ns<br>~~oo~~<br>~~ee~~|TJ= 25°C, IF= 76A, VDS= 16V<br>di/dt = 100A/µs<br>~~oo~~<br>~~°~~<br>~~ee~~<br>®|
|Qrr<br>~~ee~~|Reverse RecoveryCharge<br>~~ee~~|–––<br>ee<br>~~ee~~|185<br>eeee|275|nC||



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 10000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br> 1000 5.0V 1 |<br>BOTTOM 4.5V<br>DS” e saen ee ee<br> 100 ee rr<br>Zoaeillii emaa ie analell<br>4.5V<br> 10<br>20µs PULSE WIDTH<br>T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 10000<br> 1000 T  = 25  CJ °<br>it} ' | Li<br>ee r<br>T  = 175  CJ °<br>H EA<br>, “<br> 100<br>ay gees<br>BARRE ESE ES<br>V      = 15VDS<br> 10 pppPLETE 20µs PULSE WIDTH t<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V YA<br>BOTTOM 4.5V<br>ay yey /, am |<br> 100 || firT<br>4.5V<br>a 4a<br>20µs PULSE WIDTH<br>T  = 175J °C<br> 10<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 210AA<br>2.0<br>F<br>1.5<br>fittt tt | et<br>AEEAn<br>1.0<br>CEES|<br>0.5 HH<br>0.0 P ET E  E E ELEELLTTT LE VGS = 10V LI<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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14000 VGS = 0V, f = 1MHz 20 ID = 76A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 24V<br>12000 TT CCrssoss == CCgdds + Cgd 16 eH o T<br>Se e en e se<br>10000<br>S | [—_——] S S eet<br>Ciss 12<br>8000 NEGATE. SEC SEREEREREEER?4G8<br>a S| PEE A<br>6000 PP NIE 8 PET TTT TTTATT<br>Coss<br>4000 esa Sooo GERSEC ARRDA<br>4<br>2000<br>eg TTT<br>PSS TT FOR TEST CIRCUIT<br>0 Pe, Crss Soeth 0 “LEEy pease SEE FIGURE       13<br> 1  10  100 0 40 80 120 160 200 240 280 320<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>           Drain-to-Source Voltage           Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br> 100<br>T  = 175  CJJ °  1000<br>po a ne at 10us EH<br> 10<br>See eee eeeee SSRs 100us it<br>—— T  = 25  CJJ ° Sanh LIT<br>R R  100 ll l<br> 1 1ms<br>ft tt pT  T TCJ = 25  C= 175  C° ° SS 10ms<br>SSSFLEESFLEESS ELESES V      = 0 V GSGS ea  Single Pulse iel tHll<br>0.1  10<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4  1  10  100<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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 1000<br> 100<br>T  = 175  CJJ °<br>po ne<br>a<br> 10<br>See eee eeeee<br>—— T  = 25  CJJ °<br>R R<br> 1 ft tt<br>SSSFLEESFLEESS ELESES V      = 0 V GSGS<br>0.1<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>V     ,Source-to-Drain Voltage (V)SDSD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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240<br>LIMITED BY PACKAGE<br>200 ECER LL cbe ° aanRp |<br>Re<br>-<br>PCR Ve s<br>160<br>|PTT| | | PtH<br>120 ft | NaEt sf tov ≤ 1<br>≤ 0.1 %<br>Pi |tT t TT TVAt EL | || ||| | PD ty u lse Factor Width ys<br>80 Pitt; Fig 10a.   Switching Time Test Circuit 1<br>a TARE TNT |<br>40 FT {iT{[ [T_T {[ TIA VDS<br>90%<br>Pt ttt} tt ty ty /<br>0 Ft tT tT tt ete] ft ft |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |<br>\« p< >! le ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>       Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1<br>e D = 0.50 a ee ee ee<br>L 0.20 e|<br>0.1 E e<br>0.10<br>0.05<br>— eer<br>0.02<br>— 0.01 SINGLE PULSE PDM<br>0.01 o (THERMAL RESPONSE) e<br>t1<br>aa ee e eee ee ee t2<br>Notes:<br>a a ee eee<br>1. Duty factor D = t   / t1 2<br>ll 2. Peak TJ = P DM x  ZthJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>TL<br>oe 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>e tp [—]<br>/<br>/ |<br>IAS f d<br>**----- End of picture text -----**<br>


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6000<br>ID<br>5000 PiP|tT [TT] TOP 31A 54A<br>BOTTOM 76A<br>Ne<br>t<br>4000 IV | t T<br>3000 ENG Eee<br>PN TT<br>Pi IN| Tt yt ye<br>2000 NENNNO RK TE<br>1000 Pp SAAN NU<br>Pt tT oS RSS<br>0 Pit ty Pr [Sse]<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>o o<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>fee, .3µF<br>Lei +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop e_<br>® Inductor Curent ee cee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>= << 4 6.10 (.240)<br>15.24 (.600) ‘| an Cc ra<br>14.84 (.584) LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| aa [ar] 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X ait [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>a 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INT ERNAT IONAL PART  NU MB ER<br>IN T HE AS S EMB LY LINE "C" RECT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>AS SE MB LY YEAR 7 =  1997<br>LOT  CODE WEEK 19<br>L INE C<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by max. junction temperature. 

Starting TJ = 25°C, L = 0.6mH RG = 25Ω, IAS = 76A. 6) ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A 

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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