# Power MOSFET, N Channel, 55 V, 110 A, 8000 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1704017/)

**URL**: https://novapart.co/products/IRF3205PBF/power-mosfet-n-channel-55-v-110-a-8000-ohm-to
**SKU**: IRF3205PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4760
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1704017/)

PD-94791B 

## IRF3205PbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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**----- Start of picture text -----**<br>
D<br>VDSS = 55V<br>R  = 8.0m Ω<br>DS(on)<br>G<br>ID = 110A<br>S<br>: RX<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>ee|**Absolute Maximum Ratings**|||
|---|---|---|---|
|ee<br>~~—————~~|**Parameter**<br>~~—————~~|**Max.**<br>~~—~~|**Units**|
|ID@ TC= 25°C<br>ee<br>so<br>~~—————~~<br>a|Continuous Drain Current, VGS@ 10V<br>so<br>~~—————~~|110<br>so<br>~~—~~<br>oe|A<br>oe|
|ID@ TC= 100°C<br>~~—————~~<br>a|Continuous Drain Current, VGS@ 10V<br>~~—————~~|80<br>~~—~~<br>oe||
|IDM<br>~~—————~~<br>a|Pulsed Drain Current<br>~~—————~~<br>©|390<br>~~—~~<br>oe||
|PD@TC= 25°C<br>~~—————~~<br>~~a~~<br>~~ee~~|Power Dissipation<br>~~—————~~|200<br>~~—~~|W|
|~~ee~~|Linear DeratingFactor|1.3|W/°C|
|VGS<br>~~ee~~<br>~~a~~|Gate-to-Source Voltage|± 20|V|
|IAR<br>~~oO~~|Avalanche Current<br>~~oO~~|62<br>~~oO~~|A<br>~~oO~~|
|EAR<br>~~©~~|Repetitive Avalanche Energy<br>~~©~~|20<br>~~©~~|mJ<br>~~©~~|
|dv/dt<br>~~©~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~©~~<br>~~pf~~|5.0<br>~~©~~|V/ns<br>~~©~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175|°C|
|~~pf~~<br>i<br>~~es~~|SolderingTemperature, for 10 seconds<br>~~pf~~<br>~~a~~|300(1.6mm from case)||
|~~pf~~<br>~~es~~<br>~~nD~~|Mounting torque, 6-32 or M3 srew<br>~~pf~~<br>~~nD~~|10 lbf•in (1.1N•m)<br>~~nD~~|~~nD~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



## IRF3205PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~a~~|**Min. **<br>|**Typ. **<br>|**Max.**<br>|**Units**<br>|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ass~~|55<br>~~ss~~|–––<br>~~ss~~|–––<br>~~ss~~|V<br>~~ss~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~|0.057<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA|
|RDS(on)<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~ss~~<br>~~a~~|–––<br>~~ss~~<br>|–––<br>|8.0<br>|mΩ|VGS= 10V, ID= 62A<br>®|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~ars~~|2.0<br>~~es~~|–––<br>~~es~~|4.0<br>~~es~~|V|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~ars~~|44<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|S|VDS= 25V, ID= 62A<br>~~®~~|
|IDSS<br>|Drain-to-Source Leakage Current<br>~~rs ~~<br>~~SSS~~<br>ee|–––<br> ~~es ~~<br>~~SSS~~|–––<br> ~~es~~<br>~~SSS~~|25<br>~~es~~<br>~~SSS~~|µA<br>~~SSS~~|VDS= 55V, VGS= 0V<br>~~®~~|
|||–––<br>~~SSS~~<br>ee|–––<br>~~SSS~~<br>ee|250<br>~~SSS~~<br>ee||VDS= 44V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~|~~|–––<br>~~|~~|–––<br>~~|~~|-100<br>~~|~~||VGS= -20V|
|Qg<br>~~es~~|Total Gate Charge<br>~~es~~<br>|–––<br>~~es~~<br>|–––<br>~~es~~<br>|146<br>~~es~~<br>|nC|ID= 62A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>~~es~~|Gate-to-Source Charge<br>~~es~~<br>|–––<br>~~es~~<br>|–––<br>~~es~~<br>|35<br>~~es~~<br>|||
|Qgd<br>~~es|~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~|~~|–––<br>~~es~~<br>~~|~~|–––<br>~~es~~<br>~~|~~|54<br>~~es~~<br>~~|~~|||
|td(on)<br>~~|~~<br>es|Turn-On Delay Time<br>~~|~~|–––<br>~~|~~|14<br>~~|~~|–––<br>~~|~~|ns|VDD= 28V<br>ID= 62A<br>RG= 4.5Ω<br>VGS= 10V, See Fig. 10|
|tr<br>es<br>es|Rise Time|–––|101|–––|||
|td(off)<br>es<br>es|Turn-Off Delay Time|–––|50|–––|||
|tf<br>es|Fall Time|–––|65|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS<br>~~pf~~|Internal Source Inductance<br>~~pf~~|–––|7.5|–––|||
|Ciss<br>~~pf~~<br>es|Input Capacitance<br>~~pf~~|–––|3247|–––|pF<br>(OR|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>es<br>~~es~~|Output Capacitance<br>~~pf~~|–––|781|–––|||
|Crss<br>es<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~PD~~|–––<br>~~PD~~|211<br>GOK©)|–––<br>©)<br>>)|||
|EAS<br>~~es~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~PD~~|––– 1050<br>~~PD~~|1050<br>GOK©)|264<br>©)<br>>)|mJ<br>(OR|IAS= 62A, L = 138µH|



**Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current ––– ––– 110 MOSFET symbol D ~~nn~~ (Body Diode) ~~ee~~ A showing  the ISM Pulsed Source Current ––– ––– 390 integral reverse G (Body Diode) p-n junction diode. S ~~ee)~~ VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A ~~SE @~~ Qrr ~~Sn~~ Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ~~—.>a HHH @~~ 

0) Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) @ Starting TJ = 25°C, L = 138µH 

RG = 25 Ω , IAS = 62A. (See Figure 12) 

@ ISD ≤ 62A , di/d ≤ 207A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

© This is a typical value at device destruction and represents operation outside rated limits. 

This is a calculated value limited to TJ = 175°C. 

www.irf.com 

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## IRF3205PbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V7.0V iA<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM4.5V<br> 100<br>| Lg Foe<br>Voo”eae720|eee<br> 10<br>SSS a 4.5V eee<br>Santis atii eal<br> 1 SPETH IT 20µs PULSE WIDTHT  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V pa<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br> 100<br>ee) See eee<br>a” 2eo<br>4.5V<br>aD Ji e l<br> 10 b= SS eet<br>Se aiiii eeeaii email<br>T HI 20µs PULSE WIDTHT  = 175J °C<br> 1 PL [TIT] |<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000 2.5<br>ID = 107A<br>SS T  = 25  CJ ° S L ETT<br>PS 2.0 PT TET Py<br>T  = 175  CJ °<br> 100<br>nn al ee ee<br>1.5<br>ny 4 PT TTT TT | yt<br>c/a<br>1.0<br> 10<br>Fee eeee S52-snnnnnen<br>0.5<br>BSSaaesa= AU<br>V      = 25VDS<br>a 20µs PULSE WIDTH PEP E VGS = 10V<br> 1 0.0 EE<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRF3205PbF 

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6000 VGS   = 0V,     f = 1 MHZ 16 ID = 62A<br>5000 =a C C C rss   oss  iss   = C   = C  = Cgs ds  gd  + C+ Cgdgd, Cds  SHORTED 1412 CoPt | ||EERE| {| | VVV | DSDSDS=== |  44V 27V 11V ttTEEK ft<br>meeMYT TTTTT SeeeeEEEEeTe|<br>4000<br>a Ciss TTT 10 OM<br>ae oe +++}ey<br>3000 NER | | 8 Va<br>PNGB P EP PT ay<br>ee | TT<br>2000 PENTE Coss EET 6 pti | TT|baatAa<br>rt tt<br>rt 4 | | ey | | | | |<br>1000 PO NALETIINE || | ETT P T7T TyTE [ye]<br>Crss 2<br>Pr i SST PAL<br>0 pt 0 Vr rrr rr erty tr<br>1 10 100 0 20 40 60 80 100 120<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>T  = 175  CJJ ° BY RDS(on)<br>a | LL Bal<br> 100 jae ft  1000 20 |<br>10us<br> 10 A  100 Pell een tT eee ii<br>if fj | | | SS |<br>100us<br>T  = 25  CJJ °<br>1ms<br> 1 eyFTesFTeses | ee eeeeeeeeeeee  10 ECis Sb bi 0 e<br>S T<br>10ms<br> T TCJ = 25  C= 175  C° °<br>Pedi Pd V      = 0 V GSGS |  Single Pulse H ER E<br>0.1 Lyi et | | TT  1 Wi TTTEE<br>0.2 0.8 1.4 2.0 2.6  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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 1000<br>T  = 175  CJJ °<br>a<br> 100 jae ft<br> 10 A<br>if fj | | |<br>T  = 25  CJJ °<br> 1 eyFTesFTeses | ee eeeeeeeeeeee<br>Pedi Pd V      = 0 V GSGS<br>0.1 Lyi et | | TT<br>0.2 0.8 1.4 2.0 2.6<br>V     ,Source-to-Drain Voltage (V)SDSD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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## IRF3205PbF 

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120<br>LIMITED BY PACKAGE<br>100 SCH cee<br>CSTE<br>80<br>COPE<br>oN<br>60 PEt tT TE TNE YT<br>ptt PEt PIN<br>40<br>pepe fe ONS<br>20 Pitt tt tt tt A<br>Pp} tet et yt ty<br>0 PET TT EE TE<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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≤ 1<br>≤ 0.1 %<br>Puree<br>. OS<br>Fig VDS  10a. Switching Time Test Circuit<br>90%<br>[\<br>| |<br>|<br>10% /\ |<br>VGS I|«—>la—_____»|ey<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 1 a<br>a<br> —<br>D = 0.50<br>e B<br>| ee<br>P e Co<br>0.20 ao<br>0.1 0.10<br>o_O<br>0.05 PDM<br>cents eee als ee v0] | |<br>5 0.02 4 (THERMAL RESPONSE)  | SINGLE PULSE ee ee ee t1<br>= 0.01 Yo2 Onll Notes: t2<br>1. Duty factor D = t   / t1 2<br>A a 2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRF3205PbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>¢ 20V Jt<br>tp 0.01 Ω<br>Fig 12a. Unclamped Inductive Test Circuit<br><— tp — V(BR)DSS<br>\<br>//al<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>QG —_<br>V i<br>A QGS QGD<br>VG Se<br>Charge<br>**----- End of picture text -----**<br>


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500<br>ID<br>TOP 25A<br>NEGeEee<br>44A<br>At<br>400 | BOTTOM 62A<br>PN<br>300 NE [NEES] |<br>NEN<br>200 BNNGNE EEE<br>PSS<br>100<br>pif} SS}<br>0 pot | | USE<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Vs. Drain Current<br>Fig 12c. Maximum Avalanche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>| J | +<br>rar a D.U.T. -VDS<br>VGS<br>(at<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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## IRF3205PbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## IRF3205PbF 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1O10<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019<br>17 8g DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB package is not recommended for Surface Mount Application 

**Notes:** 

## **1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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---

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