# Power MOSFET, N Channel, 55 V, 110 A, 8000 µohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:2579972/)

**URL**: https://novapart.co/products/IRF3205LPBF/power-mosfet-n-channel-55-v-110-a-8000-ohm-to-262
**SKU**: IRF3205LPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0500
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579972/)

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PD - 95106<br>**----- End of picture text -----**<br>


## IRF3205SPbF IRF3205LPbF HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 55V<br>R  = 8.0mΩ<br>DS(on)<br>G<br>ID = 110A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  onresistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3205L) is available for low-profile applications. 

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D [2] Pak TO-262<br>IRF3205SPbF IRF3205LPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Parameter Max. Units** $f ID @ TC = 25°C ee Continuous Drain Current, VGS @ 10V ——__, 110 —_ + ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A ~~—~~ © IDM Pulsed Drain Current ~~ee~~ 390 ~~i A~~ PD @TC = 25°C Power Dissipation 200 W ~~a~~ Linear Derating Factor 1.3 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~©~~ IAR Avalanche Curren 62 A ~~A~~ EAR Repetitive Avalanche Energy 20 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C a ~~pfa~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~es~~ Mounting torque, 6-32 or M3 srew ~~I~~ 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθJA|Junction-to-Ambient (PCB mounted, steady-state)*|–––|40||



www.irf.com 

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03/11/04 

## IRF3205S/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

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ee Parameter Min. es ee Typ. Max. Units  Conditions<br>V(BR)DSS es Drain-to-Source Breakdown Voltage 55 es ––– ed ––– V VGS = 0V, ID = 250µA<br>∆V(BR)DSS/∆TJ es Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA<br>RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A<br>es ee s eees ®<br>VGS(th) es Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA<br>gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A<br>es ee ee<br>IDSS Drain-to-Source Leakage Current –––––– –––––– 25025 µA VVDSDS = 55V, V = 44V, VGSGS = 0V = 0V, TJ = 150°C<br>ee Gate-to-Source Forward Leakage ––– es [eee] ––– es ee 100 VGS = 20V ®<br>IGSS e Gate-to-Source Reverse Leaka se ge ––– ––– | -100 nA VGS = -20V<br>Qg es Total Gate Charge ––– ––– 146 ID = 62A<br>es Qgs Gate-to-Source Charge ––– es ––– 35 nC VDS = 44V<br>Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13<br>a td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V<br>tr Rise Time ––– 101 ––– ID = 62A<br>ee ee ns<br>a td(off) Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω<br>tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10<br>ee LLDS Internal Drain InductanceInternal Source Inductance ee –––––– 4.57.5 –––––– nH Between lead,6mm (0.25in.)from packageand center of die contact ® G SD<br>Ciss Input Capacitance ––– 3247 ––– VGS = 0V<br>af<br>Coss Output Capacitance ––– 781 ––– VDS = 25V<br>es<br>Crss Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5<br>eeee<br>EAS Single Pulse Avalanche Energy @ ––– 1050 (6)  264 @ mJ IAS = 62A, L = 138µH<br>Source-Drain Ratings and Characteristics<br> Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 110 MOSFET symbol D<br>(Body Diode) A showing  the<br>ISM Pulsed Source Current ––– ––– 390 integral reverse G<br>ee a (Body Diode) p-n junction diode. i S<br>VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V<br>A trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A °<br>Qrr Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs<br>ton ee Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>Se Sn :<br>Notes:<br>o) Repetitive rating;  pulse width limited by ®  Pulse width ≤ 400µs; duty cycle ≤ 2%.<br>     max. junction temperature. ( See fig. 11 ) © Calculated continuous current based on maximum allowable<br>©   Starting TJ = 25°C, L = 138µH      junction temperature. Package limitation current is 75A.<br>     RG = 25Ω, IAS = 62A. (See Figure 12)<br>© This is a typical value at device destruction and represents<br>© ISD ≤ 62A 4 di/d ≤ 207A/µs, VDD ≤ V(BR)DSS,      operation outside rated limits.<br>     TJ ≤ 175°C © This is a calculated value limited to TJ = 175°C.<br>**----- End of picture text -----**<br>


- When mounted on 1" square PCB ( FR-4 or G-10 Material ). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

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## IRF3205S/LPbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V pa<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br> 100<br>ee) See eee<br>4.5V<br>rg (a<br>a me<br> 10 b= SS eet<br>eesti eesti eel<br>Tineine HI 20µs PULSE WIDTHT  = 175JT  = 175JJ °CC<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000 VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V Fr 7.0V pa<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM4.5V BOTTOM 4.5V<br> 100  100<br>| UL Foe ee) See eee<br>4.5V<br>re” 7a rg (a<br>V ee ee a me<br> 10 Zea A  10<br>SSS a 4.5V eee b= SS eet<br>Sail ee nslileal eesti eesti eel<br> 1 SPLTH IT 20µs PULSE WIDTHT  = 25J °C  1 Tineine HI 20µs PULSE WIDTHT  = 175JT  = 175JJ °CC<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 1000 2.5<br>ID = 107A<br>——SS==== T  = 25  CJ ° | PEELE<br>a —— 2.0 PT TTT<br>T  = 175  CJ ° CEE<br>A PETTY<br> 100<br>F e 1.5 SEREREEEZER<br>ny 2 A LA<br>1.0<br> 10<br>Hf | | Seeacnnennnn<br>0.5<br>eeSS e e eee<br>V      = 25VDS<br>20µs PULSE WIDTH VGS = 10V<br> 1 i en 0.0 PE PE<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

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6000 VGS   = 0V,     f = 1 MHZ 16 ID = 62A<br>5000 =a C C C rss   oss  iss   = C   = C  = Cgs ds  gd  + C+ Cgdgd, Cds  SHORTED 1412 CoPt | ||EERE| {| | VVV | DSDSDS=== |  44V 27V 11V ttTEEK ft<br>SIee SeeeeEEEEeTe|<br>4000<br>Ciss 10<br>Ss ae ee +++}eyOM<br>3000 NER | LI! 8 Va<br>NGG P EP PT ay<br>ee | TT<br>2000 PENTE Coss EET 6 pti | TT|baatAa<br>rt tt<br>rt 4 | | ey | | | | |<br>1000 PO NALETIINE || | ETT P T7T TyTE [ye]<br>Crss 2<br>Pr i SST PAL<br>0 pt 0 Vr rrr rr erty tr<br>1 10 100 0 20 40 60 80 100 120<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>T  = 175  CJJ ° BY RDS(on)<br>a | LL Bal<br> 100 jae ft  1000 20 |<br>10us<br> 10 A  100 Pell een tT eee ii<br>if fj | | | SS |<br>100us<br>T  = 25  CJJ °<br>1ms<br> 1 eyFTesFTeses | ee eeeeeeeeeeee  10 ECis Sb bi 0 e<br>S T<br>10ms<br> T TCJ = 25  C= 175  C° °<br>Pedi Pd V      = 0 V GSGS |  Single Pulse H ER E<br>0.1 Lyi et | | TT  1 Wi TTTEE<br>0.2 0.8 1.4 2.0 2.6  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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 1000<br>T  = 175  CJJ °<br>a<br> 100 jae ft<br> 10 A<br>if fj | | |<br>T  = 25  CJJ °<br> 1 eyFTesFTeses | ee eeeeeeeeeeee<br>Pedi Pd V      = 0 V GSGS<br>0.1 Lyi et | | TT<br>0.2 0.8 1.4 2.0 2.6<br>V     ,Source-to-Drain Voltage (V)SDSD<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

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120<br>LIMITED BY PACKAGE<br>100 SCP ee<br>CSTE<br>80<br>COPS<br>oN<br>60 PEt tT TE TNE YT<br>ptt PEt PIN<br>40<br>pepe fe ONS<br>20 Pitt tt tt tt A<br>Pp} tet et yt ty<br>0 PET TT EE TE<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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≤ 1<br>≤ 0.1 %<br>Puree<br>. OS<br>Fig VDS  10a. Switching Time Test Circuit<br>90%<br>[\<br>| |<br>|<br>10% /\ |<br>VGS I|«—>la—_____»|ey<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 1 a<br>a<br> —<br>D = 0.50<br>e B<br>| ee<br>C ee COI<br>0.20 aa a0<br>0.1 0.10<br>o_O<br>0.05 PDM<br>cents eee als ee v0] | |<br>5 0.02 4 (THERMAL RESPONSE)  | SINGLE PULSE ee ee ee t1<br>= 0.01 Yo2 Onll Notes: t2<br>1. Duty factor D = t   / t1 2<br>CU 2. Peak TJ = P DM x  ZthJC + TC<br>0.01 TEA PT)<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>¢ 20V Jt<br>tp 0.01Ω<br>Fig 12a. Unclamped Inductive Test Circuit<br><— tp — V(BR)DSS<br>\<br>//al<br>IAS<br>**----- End of picture text -----**<br>


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QG —_<br>V<br>A QGS QGD<br>VG Se<br>Charge<br>**----- End of picture text -----**<br>


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500<br>ID<br>TOP 25A<br>NEGeEee<br>44A<br>BVEEEEe<br>400 PN BOTTOM 62A<br>300 NENEES<br>NEN<br>200 BNNGNE EEE<br>PSS<br>100<br>pif} SS}<br>0 pot | | USE<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Vs. Drain Current<br>Fig 12c. Maximum Avalanche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>i | +<br>rar a D.U.T. -VDS<br>VGS<br>(at<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

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**----- Start of picture text -----**<br>
D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop<br>® Inductor Curent ee cee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  8 02 4 IN T E R N AT ION AL —<br>AS S E M B L E D  O N  W W  0 2, 2 00 0 R E CT IF IE R F 53 0 S<br>IN  T H E  AS S E M B L Y L IN E  "L " L OGO TeaR 002.<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E M B L Y 80‘+ [Ju 724 D AT E  CO D EY E AR  0 =W E E K  02  2 00 0<br>ia U L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL —<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y Ju<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?U 7U YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

## TO-262 Package Outline 

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IGBT<br>1-  GAT _— E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO — IRIRL3103L719<br>Note: "P" in assembly line 1789 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## OR 

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**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL ——,<br>RECTIFIER IRL3103L<br>LOGO TORP7IOA<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## IRF3205S/LPbF 

## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL IN)<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>; 12.80 (.504) 23.90 (.941) 4<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) tt 4<br>a 3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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- [Supplier page](https://es.farnell.com/infineon/irf3205lpbf/mosfet-n-ch-55v-110a-to-262-3/dp/2579972)
---

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