# Power MOSFET, N Channel, 75 V, 89 A, 0.0094 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8657530/)

**URL**: https://novapart.co/products/IRF2807ZSPBF/power-mosfet-n-channel-75-v-89-a-00094-ohm-to-263
**SKU**: IRF2807ZSPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 170W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 170W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0094ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 89A |
| Drain Source On State Resistance | 0.0094ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657530/)

PD - 95488A 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

## IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF HEXFET[®] Power MOSFET 

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D<br>VDSS = 75V<br>R  = 9.4m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>**----- End of picture text -----**<br>


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TO-220AB D [2] Pak TO-262<br>IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~OO~~|89<br>~~OO~~|A<br>~~a~~<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V(See Fig. 9)|63||
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~a~~|75<br>~~a~~||
|IDM|Pulsed Drain Current<br>~~a~~|350<br>~~a~~||
|PD@TC= 25°C<br>~~—~~|Maximum Power Dissipation<br>~~a~~<br>~~—~~|170<br>~~a~~|W<br>~~a~~|
|~~—~~|Linear Derating Factor<br>~~a~~<br>~~—~~<br>~~eeosfseeeeeeheseSs~~|1.1<br>~~a~~<br>~~eeosfseeeeeeheseSs~~|W/°C<br>~~a~~<br>~~eeosfseeeeeeheseSs~~|
|VGS<br>~~—~~|Gate-to-Source Voltage<br>~~—~~<br>~~eeosfseeeeeeheseSs~~<br>~~a~~|± 20<br>~~eeosfseeeeeeheseSs~~<br>~~a~~|V<br>~~eeosfseeeeeeheseSs~~<br>~~a~~|
|EAS|Single Pulse Avalanche Energy (Thermally Limited)<br>~~a~~<br>~~&—_”T_TFOANNTETAT~~<br>~~ee~~|160<br>~~a~~<br>~~&—_”T_TFOANNTETAT~~<br>~~ee~~|mJ<br>~~a~~<br>~~ee~~|
|EAS(tested)|Single Pulse Avalanche Energy Tested Value<br>~~ee~~|200<br>~~ee~~||
|IAR|Avalanche Current<br>~~ee~~<br>~~oO~~<br>~~eee~~|See Fig.12a,12b,15,16<br>~~ee~~<br>~~eee~~<br>~~ee~~|A<br>~~ee~~<br>~~eee~~|
|EAR|Repetitive Avalanche Energy<br>~~eee~~<br>~~ee~~||mJ<br>~~eee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~eee~~<br>~~ee~~|-55  to + 175<br>~~eee~~<br>~~ee~~|°C<br>~~eee~~|
||Soldering Temperature, for 10 seconds<br>~~ee~~|300 (1.6mm from case )<br>~~ee~~||
||Mounting torque, 6-32 or M3 screw<br>~~ee~~<br>~~a~~|10 lbf•in (1.1N•m)<br>~~ee~~<br>~~a~~|~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

1 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GO~~|**Typ.**<br>~~GO~~|**Max. **<br>~~GO~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|75<br>~~RD~~<br>~~GO~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~<br>~~GO~~|V<br>~~RD~~<br>~~GOGO~~<br>~~GO CO~~|VGS= 0V, ID= 250µA<br>~~RD~~<br>~~GOGO~~<br>~~CO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~RD~~<br>~~GO~~|–––<br>~~GO~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|0.073<br>~~GO~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|–––<br>~~GO ~~<br>~~RD~~<br>~~GO~~<br>|V/°C<br> ~~GOGO~~<br>~~RD~~<br>~~GO CO~~<br>~~GOGO~~<br>|Reference to 25°C, ID= 1mA<br>~~GOGO~~<br>~~RD~~<br>~~CO~~<br>~~GOGO~~<br>|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~RD~~<br>~~GO~~<br>~~GO~~<br>~~GO~~|–––<br>~~RD~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~GO~~|7.5<br>~~RD~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~GO~~|9.4<br>~~RD~~<br>~~GO~~<br>~~GO~~<br>|mΩ<br>~~RD~~<br>~~GO CO~~<br>~~GO~~<br>~~GOGO~~<br>~~**GOGO**~~|VGS= 10V, ID= 53A<br>~~RD~~<br>~~CO~~<br>~~GO~~<br>~~GOGO~~<br>~~**GOGO**~~|
|VGS(th)|Gate Threshold Voltage<br>~~GO~~<br>~~GO~~<br>~~GO~~|2.0<br>~~GO~~<br>~~GO~~<br>~~GO~~|–––<br>~~GO~~<br>~~GO~~<br>~~GO~~|4.0<br>~~GO~~<br>|V<br>~~GO~~<br>~~GOGO~~<br>~~**GOGO**~~|VDS= VGS, ID= 250µA<br>~~GO~~<br>~~GOGO~~<br>~~**GOGO**~~|
|gfs|Forward Transconductance<br>~~GO~~<br>~~GO~~|67<br>~~GO~~<br>~~GO~~<br>~~ee~~|–––<br>~~GO ~~<br>~~GO~~<br>~~ee~~|–––<br> <br>~~ee~~|S<br>~~GOGO~~<br> ~~**GOGO**~~<br>~~ee~~|VDS= 25V, ID= 53A<br>~~GOGO~~<br>~~**GOGO**~~<br>~~ees~~|
|IDSS|Drain-to-Source Leakage Current<br><br>~~GO~~<br>~~ee~~|–––<br><br>~~GO~~<br>~~ee~~<br>~~ee~~|–––<br> <br>~~GO~~<br>~~ee~~<br>~~ee~~|20<br> <br>~~ee~~<br>~~ee~~|µA<br> ~~**GOGO**~~<br>~~ee~~<br>~~ee~~|VDS= 75V, VGS= 0V<br>~~**GOGO**~~<br>~~ee~~<br>~~ees~~|
|||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 75V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ees~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~ee ~~<br>~~a~~|–––<br> ~~ee ~~<br>~~a~~<br>~~ee~~|200<br> ~~ee~~<br>~~a~~<br>~~ee~~|nA<br>~~ee ~~<br>~~a~~<br>~~ee~~|VGS= 20V<br> ~~ees~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~ae~~|–––<br>~~a~~<br>~~ae~~<br>~~ee~~|-200<br>~~a~~<br>~~ae~~<br>~~ee~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~ae~~<br>~~es~~|71<br>~~a~~<br>~~ae~~<br>~~ee ~~<br>~~es~~|110<br>~~a~~<br>~~ae~~<br> ~~ee~~<br>~~es~~|nC<br>~~a~~<br>~~ee~~|ID= 53A<br>VDS= 60V<br>VGS= 10V<br>~~a~~<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~en~~<br>~~es~~|–––<br>~~en~~|19<br>~~en~~|29<br>~~en~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|28|42|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|18<br>~~es~~|–––<br>~~es~~|ns<br>~~|~~|RG= 6.2Ω<br>VDD= 38V<br>ID= 53A<br>VGS= 10V<br>~~@~~<br>~~Ge~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~|79<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~a~~|40<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~a~~<br>~~———-+~~|45<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~———-+~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~a~~<br>~~———-+~~|4.5<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~———-+~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~Ge~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~a~~<br>~~———-+~~|7.5<br>~~ee~~<br>~~———-+~~|–––<br>~~ee~~<br>~~———-+~~|||
|Ciss|Input Capacitance<br>~~———-+~~<br>~~ee~~|–––<br>~~———-+~~<br>~~ee~~|3270<br>~~———-+~~<br>~~ee~~|–––<br>~~———-+ ~~<br>~~ee~~|pF<br> ~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~Ge~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|420<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|240<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|1590<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|280<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 60V,ƒ= 1.0MHz|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~|440<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to 60V|



## Repetitive rating;  pulse width limited by 

max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25 Ω , IAS = 53A, VGS =10V. Part not recommended for use above this value. 

ISD ≤ 53A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>PEI<br>i 6.0V<br>5.5V<br>100 U M Amoyt 5.0V<br>BOTTOM 4.5V<br>W/<br>10 4.5V<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1 a all ll<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>150<br>125<br>TJ = 25°C<br>100 E van<br>75 Ann<br>T = 175°C<br>J<br>50<br>A,<br>250 An<br>0 25 50 75 100 125 150<br>ID,Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>100 M all) Zasiiewe 7.0V<br>F e 6.0V<br>5.5V<br>FA 5.0V<br>BOTTOM 4.5V<br>10<br>1<br>Seer eee ee ee<br>4.5V<br>0.1<br>20µs PULSE WIDTH<br>Tj = 25°C<br>CHAR ttt Hit<br>0.01<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>T = 175°C<br>J<br>100<br>10 ( 5Jf {=n/4<br>T = 25°C<br>J<br>1 on ee ee ee<br>—————————— VDS = 25V<br>20µs PULSE WIDTH<br>0.1 Poes ee<br>4 6 8 10 12<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000 12.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 53A<br>Crss   = Cgd  10.0 VDS= 60V<br>10000 OH Coss  = Cds + Cgd VDS= 38V ee<br>C 8.0 VDS= 15V<br>iss<br>1000 Coss 6.0<br>Crss<br>4.0<br>100<br>2.0<br>10 0.0<br>1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100 TJ = 175°CJ = 175°C= 175°C<br>100<br>10<br>100µsec<br>10<br>T = 25°C<br>J<br>1 1msec<br>1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>VGS = 0VGS = 0V= 0V Single Pulse<br>he FEE Ett<br>0 0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>100 TJ = 175°CJ = 175°C= 175°C<br>10<br>T = 25°C<br>J<br>1<br>he VGS = 0VGS = 0V= 0V<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>90 Limited By Package ID = 53A<br>VGS = 10V<br>80<br>Eo E W<br>P< 2.0 PTL LLLLY<br>a :<br>70<br>60 P o INO P EELE<br>50 1.5<br>P EE A<br>40<br>30 NSS] TeeTTr<br>pf \ 1.0 yy,<br>ee | | | \V P ELLET<br>20<br>10 e T<br>0 Aeee 0.5 TELEsp  ELELELLLLELE ELLE<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>a ee ed 2. Peak Tj = P dm x Zthjc + Tc 1<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300<br>ID<br>TOP         22A<br>250<br>38A<br>BOTTOM 53A<br>200 S H<br>N UL<br>150<br>100<br>P SSA<br>50<br>L SS<br>LASS<br>0 i}}<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>"<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>LASS<br>< + 0 i}}<br>25 50 75 100 125 150 175<br>/ | Starting TJ , Junction Temperature (°C)<br>IAS a a<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>vs. Drain Current<br>QG<br>10V [S] [O]<br>ak QGS \* QGD ><br>5.0<br>VG TIIIIIIiu<br>4.0<br>A EE<br>Charge — TPRS<br>ID = 250µA<br>Fig 13a.   Basic Gate Charge Waveform 3.0 PEL ONAL<br>Current Regulator<br>Same Type as D.U.T.<br>2.0<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>ca D.U.T. +-VDS 1.0 PPELEPPE ELLENSE<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>VGS<br>_& 3mA | FAT TJ , Temperature ( °C )<br>oe |<br>IG ID<br>Current Sampling Resistors<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13b.** Gate Charge Test Circuit 

**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>PCIE SSATHE [E] [ET]<br>100 A em SE Allowed avalanche Current vs<br>0.01 avalanche  pulsewidth,  tav<br>ee assuming  ∆ Tj = 25°C due to  imi<br>avalanche losses<br>10 0.05<br>0.10<br>PAE EE T SSPE =<br>1<br>a<br>0.1 re a | el<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>200 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 53A   Purely a thermal phenomenon and failure occurs at a<br>150 S E     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>NUTT TTT 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>100 3. Equation below based on circuit and waveforms shown in<br>P ENGEE EL EL   Figures 12a, 12b.<br>PLEIN EEL 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>50 P EELE NG<br>    voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>P oo 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>PEE EE PANU     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V i GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>- a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt 7\<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>Re ) •   dvidtDriver controlledsame type byas ReD.U.T. Vpp + Voltage Body Diode  Forward Drop L<br>•   - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>**----- End of picture text -----**<br>


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Fig 17.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>**----- End of picture text -----**<br>


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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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**==> picture [326 x 71] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **TO-220AB package is not recommended for Surface Mount Application.** 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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**==> picture [265 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL oS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002.<br>DATE CODE<br>80 24<br>ASSEMBLY WU YEAR 0 =  2000<br>assembly line position LOT CODE T, T, WEEK 02<br>"Lead - Free” u u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONALRECTIFIER co F530S NY<br>LOGO TeIR P002A DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE WG ir o U oO YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [276 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL ——<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IeaRIRL3103L719C<br>17 89 DATE CODE<br>YEAR 7 =  1997<br>Note: “P”indicatesin assembly"Lead line- Free”position ASSEMBLYLOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL os<br>RECTIFIER IRL3103L<br>LOGO TEAR P719A.<br>17 89 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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Dimensions are shown in millimeters (inches) 

**==> picture [339 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ial :<br>ZN — 40 6 4/4 pt Tt<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [63 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [331 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>NOTES : rs lL 30.40 (1.197)      MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) Ir 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

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- [View this product on Novapart](https://novapart.co/products/IRF2807ZSPBF/power-mosfet-n-channel-75-v-89-a-00094-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irf2807zspbf/mosfet-n-75v-89a-d2-pak/dp/8657530)
---

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