# Power MOSFET, N Channel, 75 V, 71 A, 0.013 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648034/)

**URL**: https://novapart.co/products/IRF2807PBF/power-mosfet-n-channel-75-v-71-a-0013-ohm-to-220ab
**SKU**: IRF2807PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7030
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 71A |
| Drain Source On State Resistance | 0.013ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648034/)

PD - 94970A 

## IRF2807PbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 75V<br>R  = 13m Ω<br>DS(on)<br>G<br>ID = 82A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** TN **Parameter Max. Units** a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 82 o*>*DD ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 58 A a© IDM Pulsed Drain Current 280 ae ~~a~~ PD @TC = 25°C Power Dissipation 230 W ~~aa~~ Linear Derating Factor 1.5 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ IAR Avalanche Current ~~©~~ 43 A ~~a~~ EAR Repetitive Avalanche Energy 23 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~a~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~a~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.65|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>ee|**Min.**<br>ee<br>~~ee~~<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max. **<br>ee<br>~~ee~~|**Units**<br>ee<br>~~ee~~|**Conditions**<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|75<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~Ge~~<br>|–––<br> ~~ee~~<br>~~es~~<br>~~Ge~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~Ge~~|V<br>~~ee~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~Ge~~<br>~~es~~|0.074<br>~~es~~<br>~~Ge~~<br>~~ee~~|–––<br>~~es~~<br>~~Ge~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~Ge~~<br>~~es~~|–––<br>~~Ge~~<br>~~ee~~|13<br>~~Ge~~|mΩ|VGS= 10V, ID= 43A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es ~~<br>~~es~~<br>~~es~~|2.0<br>~~Ge~~<br> ~~es ~~<br>~~es~~<br>~~ee~~|–––<br>~~Ge~~<br> ~~ee~~<br>~~es~~|4.0<br>~~Ge~~<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~ee eee~~|38<br>~~ee~~<br>~~eee~~|–––<br>~~eee~~|–––<br>~~eee~~|S<br>~~eee~~|VDS= 50V, ID= 43A<br>~~®~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es ~~<br>~~ee eee~~<br>~~oo~~|–––<br> ~~ee~~<br>~~eee~~|–––<br>~~eee~~|25<br>~~eee~~|µA<br>~~eee~~<br>|VDS= 75V, VGS= 0V<br>~~®~~|
|||–––<br>~~eee~~<br>~~oo~~|–––<br>~~eee~~<br>~~oo~~|250<br>~~eee~~<br>||VDS= 60V, VGS= 0V, TJ= 150°C<br>~~>~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee eee~~<br>~~oo~~|–––<br>~~eee~~<br>~~oo~~|–––<br>~~eee~~<br>~~oo~~<br>~~=I~~|100<br>~~eee~~<br><br>~~=I~~|nA<br>~~eee~~<br> <br>~~=I~~|VGS= 20V<br>~~>~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~=I~~<br>~~ee~~|-100<br>~~=I~~<br>~~ee~~||VGS= -20V|
|Qg<br>es|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|160|nC|ID= 43A<br>VDS= 60V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>es<br>~~Sn~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|29<br>~~ee~~|||
|Qgd<br>es<br>~~Sn~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|–––<br>~~ee~~<br>~~ee~~|55<br>~~ee~~|||
|td(on)<br>~~Sn~~<br>~~es~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>ee|13<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 43A<br>RG= 2.5Ω<br>VGS= 10V, See Fig. 10<br>~~®~~|
|tr<br>~~Sn~~<br>~~es~~<br>ee|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>ee<br>~~ee~~|64<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~es~~<br>ee|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~|49<br>~~ee~~|–––|||
|tf<br>ee|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|48<br>~~ee~~|–––|||
|LD<br>~~pop~~|Internal Drain Inductance<br>~~ee ~~<br>~~|~~<br>~~pop~~<br>~~ts~~|–––<br> ~~ee~~<br>~~|~~<br>~~ts~~|~~|~~<br>~~ts~~|–––<br>~~|~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~®~~<br>~~&~~|
|LS<br>~~pop~~<br>~~es~~|Internal Source Inductance<br>~~|~~<br>~~pop~~<br>~~ts~~|–––<br>~~|~~<br>~~ts~~<br>ee|~~|~~<br>~~ts~~<br>7.5|–––<br>~~|~~|nH||
|Ciss<br>~~pop~~<br>~~es~~|Input Capacitance<br>~~pop~~<br>~~ts~~<br>~~ee~~|–––<br>~~ts~~<br>~~ee~~<br>ee|3820<br>~~ts~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~&~~|
|Coss<br>~~pop~~<br>~~es~~|Output Capacitance<br>~~pop~~<br>~~ts~~|–––<br>~~ts~~<br>ee|610<br>~~ts~~|–––|||
|Crss<br>~~es~~<br>a~~ee~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~©~~|–––<br>ee<br>~~ee~~<br>~~©~~|130<br>~~ee~~<br>~~©~~|–––<br>~~ee~~|||
|EAS<br>~~es~~|Single Pulse Avalanche Energy<br>~~©~~|––– 1280<br>~~©~~|1280<br>~~©~~|340|mJ|IAS= 50A, L = 370µH|



Notes: ~~@~~ Repetitive rating;  pulse width limited by ~~@~~ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

~~@~~ Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) 

© This is a typical value at device destruction and represents operation outside rated limits. 

- Starting TJ = 25°C, L = 370µH 

- R @© G = 25 Ω , IAS = 43A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable 

- ©) ISD ≤ 43A di/d ≤ 300A/µs, VDD ≤ V(BR)DSS, @) TJ ≤ 175°C junction temperature. Package limitation current is 75A. 

Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

www.irf.com 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V a ee 8.0V a a ee<br>7.0V6.0V a ee 7.0V6.0V a ee<br>5.5V5.0V 1 5.5V5.0V 1<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100 TrAc| | | {iit AL  Pei cae || | | IIIII  100 LAIa eee 1 A o |||<br>4.5V<br>ee th Say ae ea<br>4.5V<br>7’( A eaRAL RELY Z | |<br> 10 ofa"AN 20µs PULSE WIDTHT  = 25J | °C |  10 ULA ML 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.0<br>ID = 71A<br>rr Po TE TE TE ETT EE<br>2.5<br>a a PEt TE tT Tet LT Wa<br>T  = 25  CJ °<br>r e | [| t ase CO 2.0 Pt tTTTT tEtEtETTEtety [LLY] TY<br>T  = 175  CJ °<br> 100 P| | yar 1.5 Pi ttt tT Ett eyt fo<br>ae ae ptt ttt | Ae<br>==. —— ERRREeZCeaneee<br>7 A BERRA<br>1.0<br>a aa<br>rTP TT dy cE 0.5 I+ [| | ttt ttt<br>V      = 25VDS<br> 10 POP EEE) 20µs PULSE WIDTH 0.0 EEFT tT tT tT tT tT RE tf] VGS = 10V<br>4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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7000<br>VGS   = 0V,       f = 1 MHZ<br>a Ciss    = Cgs + Cgd,   Cds    SHORTED<br>6000 Crss    = Cgd<br>4 ] C  = C + C<br>oss   ds  gd<br>5000<br>Ciss<br>Se aver SET |<br>4000<br>PB<br>e e |<br>3000 R OE EET<br>Coss<br>2000 = [S] gt [EE]<br>N o<br>Crss<br>1000<br>a liaSOSea ilies<br>0 P R<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br> 100<br>T  = 175  CJ °<br>SmeeAGS222=====SS<br>Hn 2 ee eee eee<br> 10<br>==<br>T  = 25  CJ °<br> 1 ATE E ES<br>V      = 0 V GS<br>0.1<br>0.0 eoLIA 0.4 YE 0.8 1.2 | Tt 1.6 2.0 2.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 43A<br>FL VDS = 60V | |<br>16 VDS = 37V<br>| | | | VDS = 15V |<br>| ym<br>12<br>ttt Z|<br>P| | | EY |<br>8 rTTTATTIAT<br>Wi TS<br>4 rT7 |TAT Td<br>FOR TEST CIRCUIT<br>0 Yi tl. SEE FIGURE       13<br>0 40 80 120 160<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>ei .1S SEN<br>100 p e<br>100µsec<br>COPEL<br>10 1msec<br>L N SM E S<br>Tc = 25°C<br>Tj = 175°C<br>1 po Single Pulse aNE 10msec lll<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>LEP cL Mes A, |<br>PN EE Re | “e - ;<br>60 PTETPT TET EME EL }} Ves ≤ 1  m0<br>≤ 0.1 %<br>40 PE tT TET TNE buy racer<br>PE ET TTT EIN °<br>20 | | Tt] tty IN | Fig 10a. Switching Time Test Circuit<br>VDS<br>Coo Ty 90% —<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PET TET TT Ty  yy 10% \ ON<br>/\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 1 a<br>ee<br>ee  —<br>r D = 0.50 s _ l<br>N 0.20 e c e eeeee ee<br>0.1<br>0.10<br>— SS meee<br>PDM<br>a 0.05<br>ee ee t1<br>SINGLE PULSE<br>0.02 (THERMAL RESPONSE) t2<br>0.01<br>= e Se e e opop Notes: t<br>1. Duty factor D = t   / t1 2<br>e rr A it 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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600<br>ID<br>NEE<br>TOP 18A<br>500 rN [[Et]] 30A<br>BOTTOM 43A<br>ENEGaN EeEEE<br>GaN EEE<br>400<br>NTAEpEp<br>300<br>KN NON NON | Et<br>PNIAN|| tT<br>200 ERNSONEEPePe | INARA TL EEEFL EEEFLFL<br>100<br>)2Eee Eee.{| {| | NAN} Eee. NAN} SNE~S<br>2Eee Eee.{| eee SNE| NAN} Eee. NAN} SNE~S<br>Eee Eee.{| ~S<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>TOP 18A<br>500 rN [[Et]] 30A<br>BOTTOM 43A<br>VDS L DRIVER ENEGaN EeEEE<br>400<br>RG D.U.T + NTAEpEp<br>- [V][DD]<br>IAS A 300<br>+ KN NON NON | Et<br>20VVGS<br>yor tp 0.01 Pan Ω _ 200 PNIAN|| tT<br>12a. Unclamped Inductive Test Circuit ERNSONEEPePe | INARA TL EEEFL EEEFLFL<br>—— tp V(BR)DSS 100 )2Eee Eee.{| eee SNE| NAN} Eee. NAN} SNE~S<br>0<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJJ (  C)°°<br>/ y |\ Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>IAS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F !<br>QG .3 µ F<br>BO | +<br>T O fF D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>Oe.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TgaR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**TO-220AB package is not recommended for Surface Mount Application.** 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the  Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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