# Power MOSFET, N Channel, 55 V, 135 A, 4700 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2839476/)

**URL**: https://novapart.co/products/IRF2805STRLPBF/power-mosfet-n-channel-55-v-135-a-4700-ohm-to-263
**SKU**: IRF2805STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 135A |
| Drain Source On State Resistance | 4700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839476/)

PD - 95944A 

## IRF2805SPbF IRF2805LPbF 

## **Typical Applications** 

## HEXFET[®] Power MOSFET 

Industrial Motor Drive 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 4.7m Ω<br>DS(on)<br>G<br>ID = 135A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.  Additional features of this product  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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D [2] Pak TO-262<br>IRF2805SPbF IRF2805LPbF<br>**----- End of picture text -----**<br>


|**Absolute Maximum Ratings**<br>~~es~~|**Absolute Maximum Ratings**||~~ET~~|
|---|---|---|---|
|Doo<br>~~es~~|**Parameter**<br>Doo|**Max.**<br>Doo|**Units**<br>Doo<br>~~ET~~|
|ID@ TC= 25°C<br>~~es~~<br>~~**a**~~|Continuous Drain Current,VGS@ 10V<br>~~**a**e~~|135<br>5<br>~~e~~|A<br>~~ET~~<br>~~e~~|
|ID@ TC= 100°C<br>~~es~~<br>~~**a**~~|Continuous Drain Current, VGS@ 10V<br>~~**a**e~~|96<br>~~e~~||
|IDM<br>~~**a**~~|Pulsed Drain Current<br>~~**a**e~~|700<br>~~e~~||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|200<br>~~a~~|W<br>~~a—~~|
||Linear DeratingFactor|1.3|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|EAS<br>~~a~~|Single Pulse Avalanche Energy|380|mJ|
|EAS(6 sigma)<br>~~—~~<br>~~es~~|Single Pulse Avalanche EnergyTested Value|1220||
|IAR<br>~~es~~|Avalanche Current|See Fig.12a, 12b, 15, 16|A|
|EAR<br>~~es~~|Repetitive Avalanche Energy||mJ|
|dv/dt<br>~~es~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|2.0|V/ns|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds|300 (1.6mm from case )||



HEXFET(R) is a registered trademark of International Rectifier. 

www.irf.com 

1 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ER~~|**Parameter**<br>es<br>~~ER~~|**Min. **<br>es<br>~~es~~<br>|**Typ. **<br>es<br>|**Max. **<br>es<br>|**Units**<br>es<br>|**Conditions**<br>es<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ER~~|Drain-to-Source Breakdown Voltage<br>~~ER~~|55<br>~~es~~<br><br>~~es es~~|–––<br><br>~~es~~|–––<br>|V<br>|VGS= 0V, ID= 250µA<br>|
|∆V(BR)DSS/∆TJ <br>~~ER~~|Breakdown Voltage Temp. Coefficient<br>~~ERes~~|–––<br>~~es~~<br>~~es~~<br>~~es es~~|0.06<br>~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es es~~|3.9<br>~~es~~<br>~~es~~<br>~~es~~|4.7|mΩ|VGS= 10V, ID= 104A<br>®|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~PF~~|2.0<br>~~es~~<br>~~es es~~<br>~~PFESE~~|–––<br>~~es~~<br>~~es~~<br>~~ESE~~|4.0<br>~~es~~<br>~~ESE~~|V<br>~~es~~<br>~~ESE~~|VDS= 10V, ID= 250µA<br>~~es~~|
|gfs|Forward Transconductance<br>~~|~~<br>~~PF~~|91<br>~~es es~~<br>~~|~~<br>|<br>~~PFESE~~|–––<br>~~es~~<br>~~ESE~~|–––<br>~~ESE~~|S<br>~~ESE~~|VDS= 25V, ID= 104A|
|IDSS|Drain-to-Source Leakage Current<br>~~|~~<br>~~PF~~|–––<br>~~|~~<br>|<br>~~PFESE~~|–––<br>~~ESE~~|20<br>~~ESE~~|µA<br>~~ESE~~|VDS= 55V, VGS= 0V|
|||–––<br>~~|~~<br>|<br>~~PFESE~~|–––<br>~~ESE~~|250<br>~~ESE~~||VDS= 44V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~PF~~|–––<br>~~PF ESE~~|–––<br>~~ESE~~|200<br>~~ESE~~|nA<br>~~ESE~~|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-200||VGS= -20V|
|Qg<br>~~ee~~|Total Gate Charge<br>~~es~~|–––|150|230|nC|ID= 104A<br>VDS= 44V<br>VGS= 10V<br>~~®~~|
|Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~es~~|–––|38|57|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|52|78|||
|td(on)<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~es~~<br>~~eG~~|–––<br>~~eG~~|14<br>~~eG~~|–––<br>~~eG~~|ns|VDD= 28V<br>ID= 104A<br>RG= 2.5Ω<br>VGS= 10V<br>~~®~~<br>)|
|tr<br>ee<br>a|Rise Time<br>~~eG~~|–––<br>~~eG~~|120<br>~~eG~~|–––<br>~~eG~~|||
|td(off)<br>ee<br>a<br>~~ee~~|Turn-Off Delay Time<br>~~eG~~|–––<br>~~eG~~|68<br>~~eG~~|–––<br>~~eG~~|||
|tf<br>a<br>~~ee~~|Fall Time|–––|110|–––|||
|LD<br>~~ee~~<br>~~EE~~|Internal Drain Inductance<br>~~EE~~|–––<br>~~EE~~|4.5<br>~~EE~~|–––<br>~~EE~~|nH<br>~~EE~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>)<br>~~&~~|
|LS<br>~~ee~~<br>~~EE~~|Internal Source Inductance<br>~~EE~~|–––<br>~~EE~~|7.5<br>~~EE~~|–––<br>~~EE~~|nH<br>~~EE~~||
|Ciss<br>~~EE~~|Input Capacitance<br>~~EE~~|–––<br>~~EE~~|5110<br>~~EE~~|–––<br>~~EE~~|pF<br>~~EE~~<br>se<br>ON|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~&~~|
|Coss<br>es|Output Capacitance<br>~~ns~~|–––<br>~~ns~~|1190<br>~~ns~~|–––<br>~~ns~~|||
|Crss<br>es<br>a|Reverse Transfer Capacitance<br>~~ns~~<br>|–––<br>~~ns~~<br>|210<br>~~ns~~<br>|–––<br>~~ns~~<br>|||
|Coss<br>es<br>a|Output Capacitance<br>~~ns~~<br>|–––<br>~~ns~~<br>|6470<br>~~ns~~<br>|–––<br>~~ns~~<br>||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>ase|Output Capacitance<br>se|–––<br>se|860<br>se|–––<br>se||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz|
|Cosseff.<br>ON|Effective Output Capacitance<br>ON|–––<br>ON|1600<br>ON|–––<br>ON||VGS= 0V, VDS= 0V to 44V|
|**Source-Drain Ratings and Characteristics**|||||||
|~~>~~<br>~~ee~~|**Parameter**<br>~~>~~<br>~~ee~~|**Min. **<br>~~>~~|**Typ. **<br>~~>~~<br>~~-~~|**Max. **<br>~~>~~<br>~~a~~|**Units**<br>~~>~~<br>~~a~~|**Conditions**<br>~~(Be~~|
|IS<br>~~>~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~>~~<br>~~ee~~|–––<br>~~>~~|–––<br>~~>~~<br>~~-~~|175<br>~~>~~<br>~~a~~|~~>~~<br>~~a~~<br>~~es~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~(Be~~<br>~~®~~|
|ISM<br>~~ee~~<br>~~Sn~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~<br>|–––<br>~~Ge~~|–––<br>~~-~~<br>~~eees~~|700<br>~~a~~<br>~~es~~|||
|VSD<br>~~ee~~<br>ee<br>~~Sn~~|Diode Forward Voltage<br>~~ee~~<br>ee<br>|–––<br>ee<br>~~Ge~~|–––<br>~~-~~<br>~~eees~~|1.3<br>~~a~~<br>~~es~~|V<br>~~a~~<br>~~es~~|TJ= 25°C, IS= 104A, VGS= 0V<br>~~(Be~~<br>~~®~~|
|trr<br>~~ee~~<br>~~Sn~~|Reverse Recovery Time<br>~~ee~~<br>~~a~~|–––<br>~~Ge~~<br>~~EE~~|80<br>~~- ~~<br>~~eees~~<br>~~EE~~|120<br> ~~a~~<br>~~es~~<br>~~EE~~|ns<br>~~a~~<br>~~es~~|TJ= 25°C, IF= 104A<br>di/dt = 100A/µs<br>~~(Be~~<br>~~®~~|
|Qrr<br>~~Sn ~~<br>~~rrr~~|Reverse RecoveryCharge<br> <br>~~rrr~~|–––<br>~~Ge ~~<br>~~rrr~~|290<br> ~~eees~~<br>~~rrr~~|430<br>~~es~~<br>~~rrr~~|nC<br>~~es~~<br>~~rrr~~||
|ton<br>~~rrr~~|Forward Turn-On Time<br>~~rrr~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~rrr~~|||||



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.08mH 

- RG = 25 Ω , IAS = 104A. (See Figure 12). 

- ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C 

   - Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- Coss eff. is a fixed capacitance that gives the same charging time 

- as Coss while VDS is rising from 0 to 80% VDSS . 

- Calculated continuous current based on maximum allowable 

- junction temperature. Package limitation current is 75A. 

- Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

- avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

www.irf.com 

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1000 1000<br>VGS VGS<br>TOP          15V TOP          15V<br>                  10V                   10V<br>                  8.0V                   8.0V<br>                  7.0V                   7.0V<br>                  6.0V ) ae                   6.0V Al<br>                  5.5V                   5.5V<br>100               5.0V 6 |                   5.0V iia<br>BOTTOM 4.5V BOTTOM 4.5V<br>en A ec I<br>4.5V<br>100<br>y Pan | po Tg yw | | | {| 4.5V pr | |<br>10 eA etiiile eeGANeT eeP? emer A eee<br>SS ee erty ey 2A |<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>1 eae T e a Tj = 25°C ”ee 10 72Ai A Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 3.0<br>T = 25°C ID = 175A<br>J<br>==san855>=== I EEE<br>a 2.5 P CE<br>TJ = 175°C<br>eA ptt ety tT ety el<br>Bae ane 2.0 Pt ttt tT et | A<br>100<br>1.5<br>pot y = seeeeeeeeeeAf e) | EREPEPE Eee<br>ee ee ee ee ee eee eee 1.0 zal<br>Oe Oa OO | | eT tT tT ty tt<br>eee eee TLE<br>VDS = 25V 0.5<br>Fee<br>10 PC E) 20µs PULSE WIDTH PCTTT ETT E V GS t = 10V T<br>0.0<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V) T  , Junction TemperatureJ (    C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>A)<br> (<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>n i C iss     = C gs  + C gd ,   C ds<br>SHORTED<br>T h<br>8000 C   = C<br>rss   gd<br>n l Coss    = Cds  + Cgd |<br>6000<br>O s SE |<br>Ciss<br>PNT<br>4000<br>P ONE EHH<br>S N Baill<br>2000 p e |<br>Coss<br>S I |<br>0 Pt LR Crss =OoHII<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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1000.0<br>TJ = 175°C<br>100.0<br>10.0<br>T = 25°C<br>J<br>1.0<br>VGS = 0V<br>0.1 SS<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 104A VDS= 44V Fo]<br>VDS= 28V<br>16 EaSc se<br>ee ee<br>12<br>a eoe<br>8<br>YF | | | fl |<br>a Ae<br>4<br>P L LA | |<br>f T | fon<br>0<br>71 ||7-7—<br>0 40 80 120 160 200 240<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100<br>100µsec<br>1msec<br>10<br>Tc = 25°C<br>10msec<br>Tj = 175°C<br>HE Single Pulse<br>1 |<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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140<br>LIMITED BY PACKAGE<br>120<br>ye oe<br>100 | | | Bel fe dt LE Ves DUT.<br>-<br>|P| { t h $+} Re a f<br>80<br>pt tt| TytT Pe| ETTt tt<br>a<br>≤ 1<br>60 eeePt  eNee DutyFactor ≤ 0.1 %<br>| tT ttt tt tT rE KE 1<br>40 | tT TdT dT dT dT dT | CIN Fig 10a.   Switching Time Test Circuit<br>Pt | | tT dt rt tT tT rT dT ANY<br>20 PT tT | dT rE tT | | TT A VDS<br>90%<br>| | | | tT dE dT dE hd T hE TTY J \<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>Pee ee 10% / \ \<br>Fig 9.   Maximum Drain Current Vs. VGS |\< le >|a,mle ><br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 1 =e ee<br>a er<br>a ee eee ee ee eee eee<br>D = 0.50<br>f e<br>er<br>0.20<br>e ee<br>0.1 -Ta 0.10 lge ee a<br>rr ee ee ee a ee ee ee ee eee eee<br>ee O>r]0—DqAZ-" rer rr PDM<br>et 0.05 t1<br>9 56 Za<br>0.02 SINGLE PULSE t 2<br>ee 0.01 (THERMAL RESPONSE) |<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>aa 20VVGS<br>tp 0.01 Ω<br>w<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit V(BR)DSS — tp 

IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

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 * QG<br>10 ve<br>QGS QGD<br>VG<br>oo<br>**----- End of picture text -----**<br>


Charge 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>e e<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>The D.U.T. | +-VDS<br>VGS<br>are<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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800<br>ID<br>TOP 42.5A<br>73.5A<br>BOTTOM 104A<br>M b<br>600 ACEEEE<br>400 ERNE REE<br>KURNEEEEEEEE<br>NONNE REE<br>200<br>PSSST<br>BERR SSNNGEEE<br>0<br>25 50 75 100 125 150 175<br>pe Starting T  , Junction TemperatureJ PSS (  C)°<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.0<br>PEELE ELL ID = 250µA E<br>3.0<br>P N tt<br>(LT RANE<br>2.0<br>L ETT EINE<br>PCCCEETNS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TE<br>TJ , Temperature ( °C )<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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10000<br>1000 Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>100 0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>case should Tj be allowed to<br>0.05<br>exceed Tjmax<br>10 0 .10<br>1<br>0.1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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400<br>TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>ID = 104A<br>300 M EL<br>N u<br>A TT.<br>200 F ERALELE ELE<br>BEESNGGE EERE<br>100<br>p t PN<br>BERR EENGEEE<br>pe EE EE AN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16:** 

**(For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a 

temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

   - **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel EXFET[®] power MOSFETs 

www.irf.com 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL oo)<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO IGOR 002.<br>80 24 DATE CODE<br>YEAR 0 =  2000<br>assembly"Lead line-. Free”positionae ASSEMBLYLOT CODE Hb up U E fe U WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL oY<br>RECTIFIER F530S<br>LOGO TEAR POA DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY Wu YEAR 0 =  2000<br>LOT CODE rT G, o ov4 WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [238 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO cSTORIRL3103L719<br>1789 DATE CODE<br>Note: "P”indicatesin assembly“Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRL3103L<br>LOGO TOR P7194<br>1789 DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

**==> picture [62 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.irf.com<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches) 

**==> picture [279 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>a 1.65 (.065) arn 11.40 (.449) 15.42 (.609)15.22 (.601) £4 24.30 (.957)23.90 (.941)<br>TRL<br>LIke oT<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>er 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>° 12.80 (.504) 23.90 (.941) ie<br>4<br>| 330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) tt 4<br>aa 3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF2805STRLPBF/power-mosfet-n-channel-55-v-135-a-4700-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf2805strlpbf/mosfet-n-ch-55v-135a-to-263/dp/2839476)
---

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