# Power MOSFET, N Channel, 55 V, 175 A, 4700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657505/)

**URL**: https://novapart.co/products/IRF2805PBF/power-mosfet-n-channel-55-v-175-a-4700-ohm-to
**SKU**: IRF2805PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 175A |
| Drain Source On State Resistance | 4700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657505/)

PD - 95493A 

## IRF2805PbF 

## HEXFET[®] Power MOSFET 

## **Typical Applications** 

Industrial Motor Drive 

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D<br>VDSS = 55V<br>R  = 4.7m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of  applications. 

## **Absolute Maximum Ratings** 

|~~es~~||||
|---|---|---|---|
|~~es~~<br>~~es~~|**Parameter**<br>|**Max.**<br>|**Units**|
|ID@ TC= 25°C<br>~~es~~<br>~~es~~|Continuous Drain Current, VGS@ 10V (Silicon limited)<br>|175<br>|A|
|ID@ TC= 100°C<br>~~esa~~|Continuous Drain Current, VGS@ 10V (See Fig.9)<br>~~a~~|120<br>~~a~~||
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current, VGS@ 10V (Package limited)<br>~~a~~|75<br>~~a~~||
|IDM<br>OOOO<br>~~i~~|Pulsed Drain Current<br>OOOO<br>|700<br>OOOO<br>||
|PD@TC= 25°C<br>~~i~~|Power Dissipation<br>|330<br>|W|
|~~ia~~|Linear DeratingFactor<br>~~a~~|2.2<br>~~a~~|W/°C|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V|
|EAS<br>~~OO~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~OO~~<br>|450<br>~~OO~~<br>|mJ|
|EAS(6 sigma)<br>~~ee~~|Single Pulse Avalanche EnergyTested Value<br>|1220<br>||
|IAR<br>~~ee|~~|Avalanche Current<br>Repetitive Avalanche Energy<br>~~|~~<br>|See Fig.12a, 12b, 15, 16<br>~~|~~<br>|A|
|EAR<br>~~|~~<br>~~ee~~|||mJ|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>|-55  to + 175<br>|°C|
|~~eea~~|SolderingTemperature, for 10 seconds<br>~~a~~|300(1.6mm from case)<br>~~a~~||
|~~a~~|Mounting Torque, 6-32 or M3 screw<br>~~a~~|1.1 (10)<br>N•m (lbf•in)<br>~~a~~|N•m (lbf•in)|



HEXFET(R) is a registered trademark of International Rectifier. 

www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>ee|**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~ee~~|**Max. **<br>ee<br>~~ee~~|**Units**<br>ee|**Conditions**<br>ee|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|55<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ <br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~aes~~|–––|0.06|–––|V/°C|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)<br>~~a~~<br>~~RR~~|Static Drain-to-Source On-Resistance<br>~~aes~~<br>~~RR~~|–––|3.9|4.7|mΩ|VGS= 10V, ID= 104A<br>~~@~~|
|VGS(th)<br><br>~~RR~~|Gate Threshold Voltage<br>~~es~~<br>~~RR~~|2.0|–––|4.0|V|VDS= 10V, ID= 250µA<br>~~@~~|
|gfs<br>~~RR~~|Forward Transconductance<br>~~RR~~<br>~~|~~|91<br>~~|~~|–––|–––|S|VDS= 25V, ID= 104A|
|IDSS|Drain-to-Source Leakage Current<br>~~|~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|µA<br>~~ee~~|VDS= 55V, VGS= 0V<br>~~ee~~|
|||–––<br>~~|~~<br>~~ee~~|–––<br>~~ee~~|250<br>~~ee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|200<br>~~ee~~|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-200||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|150<br>~~ee~~|230<br>~~ee~~|nC<br>~~+~~|ID= 104A<br>VDS= 44V<br>VGS= 10V<br>~~+:~~|
|Qgs|Gate-to-Source Charge|–––|38|57|||
|Qgd<br>~~+~~|Gate-to-Drain("Miller")Charge<br>~~+~~|–––<br>~~+~~|52<br>~~+~~|78<br>~~+~~|||
|td(on)<br>~~+~~|Turn-On Delay Time<br>~~+~~|–––<br>~~+~~|14<br>~~+~~|–––<br>~~+~~|ns<br>~~+~~<br>~~a~~|VDD= 28V<br>ID= 104A<br>RG= 2.5Ω<br>VGS= 10V<br>~~+~~<br>~~a~~<br>~~&~~|
|tr|Rise Time|–––|120|–––|||
|td(off)<br>~~a~~<br>~~ee~~|Turn-Off Delay Time<br>~~a~~<br>~~ee~~|–––<br>~~a~~|68<br>~~a~~|–––<br>~~a~~|||
|tf<br>~~ee~~|Fall Time<br>~~ee~~|–––|110|–––|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~&~~|
|LS<br>~~ee~~<br>~~ff~~|Internal Source Inductance<br>~~ee~~<br>~~ff~~|–––|7.5|–––|nH||
|Ciss<br>~~ee~~<br>~~ff~~|Input Capacitance<br>~~ee~~<br>~~ff~~|–––|5110|–––|pF<br>a|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~&~~|
|Coss<br>~~ff~~|Output Capacitance<br>~~ff~~|–––|1190|–––|||
|Crss<br>a|Reverse Transfer Capacitance|–––|210|–––|||
|Coss<br>a<br>a<br>es|Output Capacitance<br>|–––<br>|6470<br>|–––<br>||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>es|Output Capacitance<br>|–––<br>|860<br>|–––<br>||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz|
|Cosseff.<br>esa|Effective Output Capacitance<br>a|–––<br>a|1600<br>a|–––<br>a||VGS= 0V, VDS= 0V to 44V|
|**Source-Drain Ratings and Characteristics**|||||||
|~~>~~|**Parameter**<br>~~>~~|**Min. **<br>~~>~~|**Typ. **<br>~~>~~|**Max. **<br>~~>~~|**Units**<br>~~>~~|**Conditions**|
|IS<br>~~>~~<br>a|Continuous Source Current<br>(Body Diode)<br>~~>~~<br>|–––<br>~~>~~<br>-<br><br>eee|–––<br>~~>~~<br>-<br><br>eee|175<br>~~>~~<br><br>eee|~~>~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>(Be|
|ISM<br>a~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~|–––<br>-<br>~~ee~~<br>eee|–––<br>-<br>~~ee~~<br>eee|700<br>~~ee~~<br>eee|||
|VSD<br>~~On~~|Diode Forward Voltage<br>~~On~~|–––<br>eee<br>~~On~~|–––<br>eee<br>~~On~~|1.3<br>eee|V|TJ= 25°C, IS= 104A, VGS= 0V<br>~~®~~|
|trr<br>~~On~~<br>~~ee~~|Reverse Recovery Time<br>~~On~~<br>~~ee~~|–––<br>~~On~~<br>~~ee~~|80<br>~~On~~<br>~~ee~~|120<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= 104A<br>di/dt = 100A/µs<br>~~®~~<br>~~ee~~|
|Qrr<br>~~ee~~|Reverse RecoveryCharge<br>~~ee~~|–––<br>~~ee~~|290<br>~~ee~~|430<br>~~ee~~|nC<br>~~ee~~||
|ton<br>~~ee~~|Forward Turn-On Time<br>~~ee~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~ee~~|||||



- mes: Repetitive rating;  pulse width limited by as CCoss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS . eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . © Coss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS . eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . max. junction temperature. (See fig. 11). Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

- @ Starting TJ = 25°C, L = 0.08mH[©] RG = 25 Ω , IAS = 104A. (See Figure 12). avalanche performance. @ ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,[©] This value determined from sample failure population. 100% TJ ≤ 175°C tested to this value in production. 

© as CCoss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS . eff. is a fixed capacitance that gives the same charging timeoss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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1000<br>VGS<br>TOP          15V<br>                  10V<br>                  8.0V<br>                  7.0V a<br>                  6.0V                  5.5V<br>                  5.5V icem nellll<br>                  5.0V TL Ail Ail<br>BOTTOM 4.5V<br>AGE |<br>100<br>e e== 4.5V HH<br>RaSemnD’eWieSemnD’eWiemnD’eWieeWie | e titty e<br>20µs PULSE WIDTH<br>Tj = 175°C<br>10 UA<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>VGS VGS<br>TOP          15V TOP          15V<br>                  10V                   10V<br>                  8.0V                   8.0V<br>                  7.0V tL A Hil                   7.0V a<br>                  6.0V                  5.5V py                   6.0V                  5.5V icem nellll<br>100               5.0V Fe Zeenat                   5.0V TL Ail Ail<br>BOTTOM 4.5V BOTTOM 4.5V<br>AGE |<br>4.5V<br>100<br>; pe ant e e== 4.5V HH<br>o/ Fe Wie | titty<br>10<br>C 200 RaSemnD’eWieSemnD’eWiemnD’eWieeWie e e<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>1 ieee Tj = 25°C | 10 UA Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 200<br>T = 25°C<br>J<br>ro] | | tll] lee 160<br>AY TJ = 175°C TJ = 175°C os<br>120<br>100 A KAELLE<br>T = 25°C<br>| f YT | | | fte| fy fT fT | fy 80 f_) J<br>Poy | | ft | fy te yt ty<br>40<br>VDS = 25V VDS = 25V<br>20µs PULSE WIDTH<br>P ep 20µs PULSE WIDTH<br>10 Ey 0 Yo<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 40 80 120 160 200<br>VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)<br>A) Gfs, Forward Transconductance (S)<br> (<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>C iss     = C gs  + C gd ,   C ds<br>SHORTED<br>T_T<br>8000 a ml C   = C<br>rss   gd<br>Coss    = Cds  + Cgd<br>6000 w allMN ee Jo<br>Ciss<br>N C<br>4000<br>P ONE FT<br>N TI<br>2000<br>O n Coss |<br>|<br>||<br>e n Crss lll<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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1000.0<br>TJ = 175°C<br>100.0<br>10.0<br>T = 25°C<br>J<br>1.0<br>ee<br>A S A VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 104A VDS= 44V<br>VDS= 28V<br>Py<br>16 [| a<br>12 fo eVA<br>a Ae<br>8<br>a An<br>4 B ae<br>p f<br>|<br>J it<br>0 fe<br>0 40 80 120 160 200 240<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100<br>100µsec<br>1msec<br>10<br>Tc = 25°C<br>10msec<br>Tj = 175°C sitar Hit<br>1 Sin OL gle Pulse<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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180 3.0<br>ID = 175A<br>a LIMITED BY PACKAGE naan P F<br>150 2.5<br>P RE , TET EEE<br>120 2.0<br>P| |OPA CRES E RRReeeeeeeCE<br>PT PE te TT ET ye<br>90 1.5<br>pe PE ttt || Pet tt<br>ERR eeeeNee Pt ttt tert tt<br>60 1.0<br>Pit EET EE EA ptt tet tt<br>Pt ET EE EEN [prt<br>30 Pet 0.5 tt | tt tt<br>Pit tteEETtty EE ENty ry HT}Pt Eet T ty ttET ttye V GS e = y 10V<br>0 Pity} eT TE yt 0.0 PET TT Eee<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Case TemperatureC (  C)° T  , Junction TemperatureJ (    C)°<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br> 1<br>a<br>D = 0.50<br>ea n nnannnEA eeCis<br>0.1 0.20<br>e 0.10 e<br>p 0.05 e mee<br>ae ee ee<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>0.01 =Ty St PMT t 1<br>t 2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>coon 2. Peak T J = P DM x  Z thJC + T C<br>0.001 i<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I   , Drain Current (A)D<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ei<br>20VVGS<br>tp 0.01 Ω<br>t ly<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit V(BR)DSS — tp 

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1000<br>I D<br>PtEt TOP 43A<br>87A<br>800 BOTTOM 104A<br>coaeeeNEG ce<br>600 BPONEE NE<br>400 NONE<br>PSSAUKE<br>200<br>Pet SANK<br>PtSSA<br>0 Pit tf | URS LT<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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— QG<br>QGS QGD<br>VG<br>oo,<br>**----- End of picture text -----**<br>


Charge 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>oo<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>The D.U.T. | +-VDS<br>VGS<br>ae<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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4.0<br>SELLE ID   EE = 250µA E<br>3.0<br>PPS<br>LEAN ELE<br>2.0<br>P LLEEPINE<br>BUOUUUEERS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>SAR GRE REEE<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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10000<br>Duty Cycle = Single Pulse<br>1000 a I EE Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>a a assuming  ∆ Tj = 25°C due to  maul<br>avalanche losses. Note: In no<br>0.01<br>100 case should Tj be allowed to<br>exceed Tjmax<br>0.05<br>0 .10<br>10<br>aa<br>1 a een ee ee<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>500 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>T TT TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>400 ID = 104A   Purely a thermal phenomenon and failure occurs at a<br>N al     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>300 C NET   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>C ONCEP<br>  Figures 12a, 12b.<br>200 P CE NEE EEE 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>C OOP<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>100 P ELAN E E E 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>Saeeeeen Senn<br>PEPE PSK     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)] Circuit    • Layout Considerations V tt GS=10<br>•<br>| =] - LowGroundStray Inductance Plane<br>•  owLeakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [l] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 _ VDD<br>•  Re-Applied<br>Re ( 4 • •  vidtriversamecontrolledtype as by RgD.U.T. Vop +- Voltage Inductor Curent Body Diode  Forward Drop iv<br>•<br>D.U.T. - Device Under Test es<br>sp controlled by Duty Factor "D" @) Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

**==> picture [16 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

**==> picture [137 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS |\< ve >!\ vie<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

www.irf.com 

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**==> picture [259 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TgaR 019C<br>17 89 DATE CODE<br>Note: "P" in assembly line position ASSEMBLY YEAR 0 =  2000<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**TO-220AB package is not recommended for Surface Mount Application.** 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF2805PBF/power-mosfet-n-channel-55-v-175-a-4700-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irf2805pbf/mosfet-n-55v-175a-to-220/dp/8657505)
---

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