# Power MOSFET, N Channel, 40 V, 75 A, 2000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2725883/)

**URL**: https://novapart.co/products/IRF2804STRLPBF/power-mosfet-n-channel-40-v-75-a-2000-ohm-to-263
**SKU**: IRF2804STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8540
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 2000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725883/)

PD - 95332B 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. 

## IRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET[®] Power MOSFET 

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D VDSS = 40V<br>R  = 2.0mΩ<br>G DS(on)<br>S ID = 75A<br>**----- End of picture text -----**<br>


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TO-220AB D [2] Pak TO-262<br>IRF2804PbF IRF2804SPbF IRF2804LPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**<br>~~es~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~a~~<br>~~es~~|270<br>~~a~~<br>~~ee~~|A<br>~~ee~~|
|ID@ TC= 100°C|Continuous Drain Current,VGS@ 10V(See Fig. 9)<br>~~es~~|190<br>~~ee~~||
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~es~~<br>~~a~~|75<br>~~ee~~<br>~~a~~||
|IDM|Pulsed Drain Current<br>~~es~~<br>~~a~~|1080<br>~~ee~~<br>~~a~~<br>~~C~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~es ~~<br>~~Le~~|300<br> ~~ee~~<br>~~Le~~<br>~~C~~|W<br>~~ee~~<br>~~Le~~<br>~~ZZ~~|
||Linear Derating Factor<br>~~Le~~<br>~~Ft~~|2.0<br>~~Le~~<br>~~C~~<br>~~Ft~~|W/°C<br>~~Le~~<br>~~Ft~~<br>~~ZZ~~|
|VGS|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~ZZ~~<br>~~a~~|
|EAS|Single Pulse Avalanche Energy (Thermally Limited)<br>~~a~~<br>~~CO~~<br>~~ee~~|540<br>~~a~~<br>~~CO~~<br>~~ee~~|mJ<br>~~a~~<br>~~ee~~|
|EAS(tested)|Single Pulse Avalanche Energy Tested Value<br>~~ee~~|1160<br>~~ee~~||
|IAR|Avalanche Current|See Fig.12a,12b,15,16|A|
|EAR|Repetitive Avalanche Energy||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175<br>~~Ty~~|°C<br>~~Ty~~|
||Soldering Temperature, for 10 seconds|300 (1.6mm from case )<br>~~Ty~~||
||Mounting torque, 6-32 or M3 screw<br>~~Le~~|10 lbf•in (1.1N•m)<br>~~Ty~~<br>~~Le~~|~~Ty~~<br>~~Le~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

1 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**<br>~~GO~~|**Max. **<br>~~OD~~|**Units**<br>~~GOGO~~|**Conditions**<br>~~GOGO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~DD~~<br>~~OD~~|40<br>~~DD~~<br>~~OD~~|–––<br>~~DD~~<br>~~GO~~<br>~~OD~~|–––<br>~~DD~~<br>~~OD~~<br>~~OD~~|V<br>~~DD~~<br>~~GOGO~~<br>~~OOOO~~|VGS= 0V, ID= 250µA<br>~~DD~~<br>~~GOGO~~<br>~~OOOO~~|
|∆ΒVDSS/∆TJ<br>~~————————e~~|Breakdown Voltage Temp. Coefficient<br>~~DD~~<br>~~OD~~<br>~~————————e~~|–––<br>~~DD~~<br>~~OD~~<br>~~————————e~~|0.031<br>~~DD~~<br>~~GO ~~<br>~~OD~~<br>~~————————e~~|–––<br>~~DD~~<br> ~~OD~~<br>~~OD~~<br>~~————————e~~|V/°C<br>~~DD~~<br>~~GOGO~~<br>~~OOOO~~<br>~~————————e~~|Reference to 25°C, ID= 1mA<br>~~DD~~<br>~~GOGO~~<br>~~OOOO~~<br>~~————————e~~|
|RDS(on)SMD<br>~~————————e~~|Static Drain-to-Source On-Resistance<br>~~OD~~<br>~~————————e~~<br>~~es~~|–––<br>~~OD~~<br>~~————————e~~|1.5<br>~~OD~~<br>~~————————e~~|2.0<br>~~OD~~<br>~~————————e~~|mΩ<br>~~OOOO~~<br>~~————————e~~<br>~~GOGO~~|VGS= 10V, ID= 75A<br>~~OOOO~~<br>~~————————e~~<br>~~@~~|
|RDS(on)TO-220 <br>~~————————e~~|Static Drain-to-Source On-Resistance<br>~~————————e~~<br>~~es~~|–––<br>~~————————e~~|1.8<br>~~————————e~~<br>~~GO~~|2.3<br>~~————————e~~<br>~~GO~~||VGS= 10V, ID= 75A<br>~~————————e~~<br>~~@~~<br>~~GOGO~~|
|VGS(th)<br>~~————————e~~|Gate Threshold Voltage<br>~~————————e~~<br>~~es~~<br>~~I~~|2.0<br>~~————————e~~<br>~~I~~|–––<br>~~————————e~~<br>~~I~~<br>~~GO~~|4.0<br>~~————————e~~<br>~~I~~<br>~~GO~~|V<br>~~————————e~~<br>~~I~~<br>~~GOGO~~|VDS= VGS, ID= 250µA<br>~~————————e~~<br>~~@~~<br>~~I~~<br>~~GOGO~~|
|gfs|Forward Transconductance<br>~~I~~|130<br>~~I~~|–––<br>~~I~~<br>~~GO~~|–––<br>~~I~~<br>~~GO ~~<br>~~OE~~|S<br>~~I~~<br> ~~GOGO~~<br>~~OE~~|VDS= 10V, ID= 75A<br>~~I~~<br>~~GOGO~~<br>~~OE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Ee~~|–––<br>~~Ee~~|–––<br>~~PT~~<br>~~Ee~~|20<br>~~PT~~<br>~~Ee~~<br>~~OE~~|µA<br>~~Ee~~<br>~~OE~~|VDS= 40V, VGS= 0V<br>~~Ee~~<br>~~OE~~|
|||–––<br>~~Ee~~|–––<br>~~Ee~~|250<br>~~Ee~~<br>~~OE~~||VDS= 40V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~OE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~<br>~~ee~~|200<br>~~OE~~<br>~~a~~<br>~~ee~~|nA<br>~~OE~~<br>~~a~~<br>~~ee~~|VGS= 20V<br>~~OE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~ae~~|–––<br>~~a~~<br>~~ae~~<br>~~ee~~|-200<br>~~a~~<br>~~ae~~<br>~~ee~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~ae~~<br>~~es~~|160<br>~~a~~<br>~~ae~~<br>~~ee ~~<br>~~es~~|240<br>~~a~~<br>~~ae~~<br> ~~ee~~<br>~~es~~|nC<br>~~a~~<br>~~ee~~|ID= 75A<br>VDS= 32V<br>VGS= 10V<br>~~a~~<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~|41<br>~~es~~|62<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|66|99|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|13<br>~~es~~|–––<br>~~es~~|ns|VGS= 10V<br>RG= 2.5Ω<br>VDD= 20V<br>ID= 75A<br>~~@~~<br>~~@~~|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|120<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|130<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––|130|–––|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~**Pe**~~|–––<br>~~**Pe**~~|4.5<br>~~**Pe**~~|–––<br>~~**Pe**~~|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~@~~<br>~~&~~|
|LS|Internal Source Inductance<br>~~**Pe**~~|–––<br>~~**Pe**~~|7.5<br>~~**Pe**~~|–––<br>~~**Pe**~~|||
|Ciss|Input Capacitance<br>~~en~~|–––<br>~~en~~|6450<br>~~en~~|–––<br>~~en~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|1690<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~en~~|–––<br>~~en~~|840<br>~~en~~|–––<br>~~en~~|||
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|5350<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~en~~|–––<br>~~en~~|1520<br>~~en~~|–––<br>~~en~~||VGS= 0V,  VDS= 32V,ƒ= 1.0MHz|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~es~~|2210<br>~~es~~|–––<br>~~es~~||VGS= 0V, VDS= 0V to 32V|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. Max RDS(on) for D[2] Pak and TO-262 (SMD) devices. TO-220 device will have an Rth value of 0.45°C/W. 

- ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

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10000<br>VGS<br>TOP          15V<br>                  10V<br>                  8.0V THEE EEE<br>                  7.0V<br>1000               6.0V HE<br>                  5.5V<br>                  5.0V CTIE E<br>BOTTOM 4.5V<br>zatle eS<br>100<br>eth Hin<br>10<br>eect Pe gr asSCE 4.5V ee Ll<br>20µs PULSE WIDTH<br>dill ee cnn<br>Tj = 25°C<br>1 PAO  oe| PE)1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>rs ee ee ee ee eee<br>T a adaes<br>T = 175°C<br>J<br>100 nP inyyt4eneeee<br>SAFPSY)a PtSSSPp<br>TJ = 25°C<br>10 7h EEE<br>a<br>VDS = 10V<br>1 FEE 20µs PULSE WIDTH t<br>4.0 5.0 6.0 7.0 8.0 9.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>WPRRLE<br>FHT<br>1000<br>BOTTOM 4.5v tt<br>100 |a<br>I=MPJano aT 4.5V relTHI<br>aaa on 20µs PULSE WIDTH<br>10 ARGY/ Tj = 175°C ait|<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>300250 O UPZA) TJ = 25°C<br>200 e aeVA<br>150 nM awh| Ts TJ = 175°C<br>100<br>50<br>VDS = 10V<br>An 20µs PULSE WIDTH<br>0<br>0 40 80 120 160 200<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>S)<br>Gfs, Forward Transconductance (<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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12000 20<br>10000 |= VCCCGS  iss rss  oss    = C = 0V,       f = 1 MHZ = C= Cgs ds gd + C+ Cgdgd,  Cds  SHORTED 16 e _ ID= 75A VVDS= 20VVDS= 8.0VDS ee = 32V e—eee<br>8000<br>e e 12 — SY |<br>e e Ciss | o-<br>6000 P re ETT | | Lge |<br>8<br>e e | TT a 74a<br>4000 N EEL EET | ma<br>SS 4 Tt<br>2000 Coss<br>a e a<br>Crss<br>0 a eee ecS| 0 AEfiiij|| |<br>0 40 80 120 160 200 240<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>TJ = 175°C<br>100.0 1000<br>100µsec<br>—— ee —— SHB RET SSH<br>10.0 100 1msec<br>10msec<br>1.0 10<br>py CETET ne TT<br>TJ = 25°C Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 2 ee es 1 oe<br>0.2 0.6 1.0 1.4 1.8 2.2 0 1 10 100<br>VSD, Source-toDrain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>1000<br>100µsec<br>SHB RET SSH<br>100 1msec<br>10msec<br>10<br>CETET ne TT<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>1 oe<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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300 2.0<br>ID = 75A<br>250 Limited By Package VGS = 10V<br>Z|<br>200 1.5<br>P ez | FE LL<br>/ai ‘. EEL EAL|<br>150<br>| PN 1.0 XK<br>100<br>P AL ; B RRnP2Gneene<br>a LETTE LLL<br>50<br>Pe 0.5 C L<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>1<br>D = 0.50<br>0.1 0.20 a<br>g L LS [a] SO eee al<br>0.10<br>—— 0.05 mT rT PHA A<br>0.01 a 0.02 ea) NR<br>0.01<br>a aa ee ee | ee |<br>0.001 ee SINGLE PULSE Tt<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>0 a a | ee 2. Peak Tj = P dm x Zthjc + Tc tH<br>0.0001 Boe il<br>1E-008 1E-007 1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>ne tp 0.01Ω<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>os tp<br>/<br>IAS w an)<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V [a] [,]<br>Ae QGS \* QGD ><br>VG<br>Charge -<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>The D.U.T. | +-VDS<br>VGS<br>a<br>3mA<br>me<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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1200<br>ID<br>TOP         31A<br>1000<br>53A<br>BOTTOM 75A<br>800 iA TT<br>600<br>N NT<br>400<br>S N<br>200<br>T SS<br>CTTTSSST<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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4.0 T TT<br>ID = 250µA<br>3.0 PRN<br>EE<br>T PTPN<br>TEEN<br>2.0<br>T TT<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>PLE TJ , Temperature ( °C ) LT T EER<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>E EE<br>a ee ee ee Allowed avalanche Current vs<br>100 0.01 avalanche  pulsewidth,  tav<br>p m assuming  ∆ Tj = 25°C due to  mn<br>avalanche losses<br>0. 0 5 a<br>0. 10<br>t T oi d<br>10<br>a a a 0 0<br>Pt<br>E E<br>1 PL ETT<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>600 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>| |fd TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>NBR BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>500 X T ID = 75A     temperature far in excess of T  Purely a thermal phenomenon and failure occurs at ajmax. This is validated for<br>    every part type.<br>400 T N || 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>P iNETETTTITT TTT<br>Ee EE EL Et 3. Equation below based on circuit and waveforms shown in<br>300<br>  Figures 12a, 12b.<br>Pt t RNSS T REE Eee 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>200 P i TTINEEEPE T ETt<br>B REN 5. BV = Rated breakdown voltage (1.3 factor accounts for    voltage increase during avalanche).<br>100 P EE 6. Iav = Allowable avalanche current.<br>7. ∆T = Allowable rise in junction temperature, not to exceed<br>P i ETTEETEENAEE EE     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 PEt EET EE |PNEEE   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)] Circuit    • Layout Considerations | t V i GS=10V<br>•<br>| =] - LowGroundStray Inductance Plane<br>owLeakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 _ VDD<br>ay<br>•  Re-Applied<br>Re ( 4 • •  vidtriversame controlledtype as by RgD.U.T. Vop +- Voltage Inductor Curent Body Diode  Forward Drop<br>•  D.U.T. - Device Under Test es ee<br>sp controlled by Duty Factor"D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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Fig 17. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>**----- End of picture text -----**<br>


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 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

## OR 

## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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Dimensions are shown in millimeters (inches) 

**==> picture [414 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>i [:]<br>a—, seo oaleo-_l -E<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [62 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [331 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| oO |<br>NOTES : ae | L 30.40 (1.197)      MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) It 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF2804STRLPBF/power-mosfet-n-channel-40-v-75-a-2000-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf2804strlpbf/mosfet-n-ch-40v-75a-to-263/dp/2725883)
---

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