# Power MOSFET, N Channel, 40 V, 160 A, 1600 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725882RL/)

**URL**: https://novapart.co/products/IRF2804STRL7PP/power-mosfet-n-channel-40-v-160-a-1600-ohm-to
**SKU**: IRF2804STRL7PP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3000
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0012oh; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 1600µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725882RL/)

PD - 97057A 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRF2804S-7PPbF 

HEXFET[®] Power MOSFET 

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D<br>VDSS = 40V<br>G<br>R  = 1.6m Ω<br>DS(on)<br>S<br>ID = 160A<br>[1)]<br>G [(Pin] a<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)|320|A<br>~~a~~<br>~~a~~<br>~~©~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V(See Fig. 9)<br>~~a~~|230<br>~~a~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~a~~|160<br>~~a~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~©~~<br>~~a~~|1360<br>~~©~~<br>~~a~~||
|PD@TC= 25°C<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~a~~|330<br>~~a~~|W|
|~~a~~<br>~~a~~<br>~~po~~|Linear Derating Factor<br>~~a~~<br>~~a~~<br>~~po~~|2.2<br>~~a~~|W/°C|
|VGS<br>~~a~~<br>~~po~~<br>~~a~~|Gate-to-Source Voltage<br>~~a~~<br>~~po~~<br>~~a~~|± 20|V|
|EAS<br>~~po~~<br>~~a~~|Single Pulse Avalanche Energy (Thermally Limited)<br>~~po~~<br>~~a~~<br>~~ee~~|630<br>~~ee~~|mJ<br>~~ee~~|
|EAS(tested)<br>~~a~~<br>~~2~~|Single Pulse Avalanche EnergyTested Value<br>~~a~~<br>~~ee~~<br>~~Oe~~<br>~~2~~<br>~~tii~~|1050<br>~~ee~~<br>~~tii~~||
|IAR<br>~~2~~|Avalanche Current<br>~~ee~~<br>~~Pl~~<br>~~Oe~~<br>~~2~~<br>~~tii~~|See Fig.12a,12b,15,16<br>~~ee~~<br>~~tii~~<br>~~pO~~|A<br>~~ee~~|
|EAR<br>~~2~~<br>~~pO~~|Repetitive Avalanche Energy<br>~~Oe~~<br>~~2~~<br>~~tii~~<br>~~pO~~||mJ<br>~~pO~~|
|TJ<br>TSTG<br>~~2~~<br>~~pO~~|Operating Junction and<br>Storage Temperature Range<br>~~2~~<br>~~tii~~<br>~~pO~~|-55  to + 175<br>~~tii~~<br>~~pO~~|°C<br>~~pO~~|
|~~pO~~|Soldering Temperature, for 10 seconds<br>~~pO~~|300 (1.6mm from case )<br>~~pO~~||
|~~pO~~|Mounting torque, 6-32 or M3 screw<br>~~pO~~<br>~~I~~|10 lbf•in (1.1N•m)<br>~~pO~~<br>~~I~~|~~pO~~<br>~~I~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~es~~|**Typ.**<br>~~Gn~~|**Max. **<br>~~Gn~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|40<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~Gn~~<br>~~Gn~~|–––<br>~~es~~<br>~~Gn~~<br>~~Gn~~|V<br>~~es~~|VGS= 0V,ID= 250µA<br>~~es~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es ~~<br>~~es~~<br>~~es~~|0.028<br>~~es~~<br> ~~Gn~~<br>~~es~~<br>~~Gn~~<br>~~ss~~|–––<br>~~es~~<br>~~Gn~~<br>~~es~~<br>~~Gn~~<br>~~ss~~|V/°C<br>~~es~~<br>~~es~~|Reference to 25°C,ID= 1mA<br>~~es~~<br>~~es~~<br>~~©~~|
|RDS(on) SMD|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es ~~<br>~~es~~|1.2<br>~~es~~<br> ~~Gn~~<br>~~es~~<br>~~ss~~|1.6<br>~~es~~<br>~~Gn~~<br>~~es~~<br>~~ss~~|mΩ<br>~~es~~<br>~~es~~|VGS= 10V,ID= 160A<br>~~es~~<br>~~es~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|2.0<br>~~es~~|–––<br>~~ss~~<br>~~es~~<br>~~sd~~|4.0<br>~~ss~~<br>~~es~~<br>~~sd~~|V<br>~~es~~|VDS= VGS,ID= 250µA<br>~~©~~<br>~~es~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~es~~|220<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~sd~~|–––<br>~~es~~<br>~~es~~<br>~~sd~~<br>~~LE~~|S<br>~~es~~<br>~~es~~<br>~~LE~~|VDS= 10V,ID= 160A<br>~~es~~<br>~~es~~<br>~~LE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~|–––<br>~~sd~~<br>~~ee~~|20<br>~~sd~~<br>~~ee~~<br>~~LE~~|µA<br>~~ee~~<br>~~LE~~|VDS= 40V,VGS= 0V<br>~~ee~~<br>~~LE~~|
|||–––<br>~~ee~~|–––<br>~~ee~~|250<br>~~ee~~<br>~~LE~~||VDS= 40V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~oo~~<br>~~|~~|–––<br>~~oo~~<br>~~|~~<br>~~|~~|–––<br>~~oo~~<br>~~|~~|200<br>~~LE~~<br>~~oo~~<br>~~|~~|nA<br>~~LE~~<br>~~oo~~|VGS= 20V<br>~~LE~~<br>~~oo~~|
||Gate-to-Source Reverse Leakage<br>~~oo~~<br>~~|~~|–––<br>~~oo~~<br>~~|~~<br>~~|~~<br>~~ee~~|–––<br>~~oo~~<br>~~|~~<br>~~ee~~|-200<br>~~oo~~<br>~~|~~||VGS= -20V<br>~~oo~~|
|Qg|Total Gate Charge<br>~~|~~<br>~~ee~~<br>~~ee~~|–––<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|170<br>~~|~~<br>~~ee~~<br>~~ee~~|260<br>~~|~~<br>~~ee~~|nC|ID= 160A<br>VDS= 32V<br>VGS= 10V<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|63<br> ~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|71<br>~~es~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns<br>~~|~~|VGS= 10V<br>RG= 2.6Ω<br>VDD= 20V<br>ID= 160A<br>~~®~~<br>~~&~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|150<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|110<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~ee~~<br>~~——-++4~~|105<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~——-++4~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~——-++4~~|4.5<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~——-++4~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~&~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~——-++4~~<br>~~ee~~|7.5<br>~~ee~~<br>~~——-++4~~|–––<br>~~ee~~<br>~~——-++4~~|||
|Ciss|Input Capacitance<br>~~——-++4~~<br>~~ee~~|–––<br>~~——-++4~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6930<br>~~——-++4~~<br>~~ee~~|–––<br>~~——-++4 ~~<br>~~ee~~|pF<br> ~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~&~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1750<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|970<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5740<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1570<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,VDS= 32V, ƒ= 1.0MHz|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2340<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,VDS= 0V to 32V|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L=0.049mH, RG = 25 Ω , IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. 

R θ is measured at TJ of approximately 90°C. 

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10000 10000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V8.0V7.0V eea ell 10V8.0V7.0V eea ell<br>6.0V 6.0V<br>5.5V 5.5V<br>1000 5.0V Ani aa 1000 5.0V ili mal<br>BOTTOM 4.5V BOTTOM 4.5V<br>Pya) yA | ll EL Lg TI<br>100 OP Aneelee er 100 ee| geeTZeenatT<br>4.5V<br>GJ AL | AA OOO<br>Zo ee ee | YY CAGE ee ee ee |<br>4.5V ≤  60µs PULSE WIDTH ≤  60µs PULSE WIDTH<br>10 etmwaaill Tsu Tj = 25°C | LL| 10 ani Prba Tj = 175°C eLLL |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 240<br>TJ = 25°C<br>To) ee ed F e —+<br>200<br>100.0<br>T = 175°C<br>HA J  [ere<br>160<br>a ve a<br>10.0 TJ = 175°C<br>pTPTEAp TJ = 25°C 12080 pVLeEe e<br>1.0<br>ee oe V re = 20V oe Wa oo<br>DS  40<br>i 2 ≤  60µs PULSE WIDTH Vi VDS = 10V<br>0.1 380µs PULSE WIDTH<br>2.0 caine 3.0 4.0 5.0 6.0 7.0 8.0 0 / |<br>0 20 40 60 80 100 120 140<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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14000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>12000<br>Crss   = Cgd<br>TL] Coss  = Cds + Cgd<br>10000<br>TTT<br>8000 Ciss<br>6000 PTpo ceefTl<br>4000 Coss<br>ee ||<br>20000 | Crss ieLT HII<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000.0<br>T = 175°C<br>J<br>100.0<br>10.0<br>TJ = 25°C<br>1.0<br>VGS = 0V<br>0.1<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 160A VDS= 32V<br>VDS= 20V<br>16<br>oS<br>12 aaee<br>ZKZO<br>8 Vanna<br>4<br>0<br>0 50 100 150 200 250 300<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100µsec<br>100<br>10<br>1msec<br>1<br>Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse DC<br>0.1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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350 2.0<br>LIMITED BY PACKAGE ID = 160A<br>300 VGS = 10V<br>250<br>c ow Hy<br>1.5<br>200<br>ef eT eee<br>150<br>a HLA<br>100 1.0<br>ef N<br>50<br>ef tt| tT t yA LAATE<br>0<br>0.5<br>25 pti} 50 75 100 125 | i 150 175 TELEELEAE EE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>1<br>D = 0.50<br>ro rrr}<br>0.1 0.20<br>0.10<br>0.05 7 R1 R1 R2 R2 ee Ri (°C/W)     τ i (sec)<br>0.01 — 0.02 0.01 a τ J τ rrr J τ 1 τ 1 τ 2 τ 2 τ C τ =~ 0.1951     0.000743 0.3050     0.008219 ee ee<br>a eee Ci= Ci τ i / Rii / Ri sd |<br>0.001<br>pt ert<br>SINGLE PULSE Notes:<br>rT ( THERMAL RESPONSE ) a 1. Duty Factor D = t1/t2<br>PA 2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_ tp<br>IAS a ALnal<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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w y QG<br>QGS QGD<br>VG<br>/<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0<br>1K<br>ned}<br>Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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2500<br>                 I<br>D<br>TOP          21A<br>2000                 33A<br>BOTTOM   160A<br>Kan<br>1500<br>1000<br>500<br>SSX<br>0<br>| SA<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>4.5<br>pet<br>4.0<br>3.5 Pa Tt |<br>| Pe<br>3.0 ASS<br>ID = 1.0A APS| PRET<br>2.5<br>ID = 1.0mA<br>2.0 ID = 250µA<br>PoE<br>1.5<br>tT TINS<br>1.0 EERE<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>SEER<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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10000<br>Duty Cycle = Single Pulse<br>1000<br>Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>100 0.01 assuming  ∆ Tj = 25 ° C due to<br>avalanche losses. Note: In no<br>0.05<br>case should Tj be allowed to<br>0.10 exceed Tjmax<br>10<br>1<br>err<br>0.1 ee ee eee ell<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>800 (For further info, see AN-1005 at www.irf.com)<br>TOP          Single Pulse                 1. Avalanche failures assumption:<br>BOTTOM   1% Duty Cycle   Purely a thermal phenomenon and failure occurs at a<br>ID = 160A     temperature far in excess of Tjmax. This is validated for<br>600     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>400 SWOTNON   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>200 SUToN     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 LLLLESSSN.Nas   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V i GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>Re ) •   Driverdvidt controlledsame type byas ReD.U.T. Vpp + Voltage Body Diode  Forward Drop L<br>•   - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>* Vag = 5V for Logic Level Devices<br>Fig 17.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Rp<br>Viro D.U.T.<br>Re<br>; - Vop<br>){ 10V<br>Pulse Width ≤ 1  ys<br>Duty Factor ≤ 0.1 %<br>Fig 18a.   Switching Time Test Circuit<br>VDS<br>90%<br>|<br>|<br>|<br>10%<br>VGS | |<br>lee >! la ple<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

www.irf.com 

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## D[2] Pak - 7 Pin Package Outline 

Dimensions are shown in millimeters (inches) 

## D[2] Pak - 7 Pin Part Marking Information 

**Notes:** 

**1. For an Automotive Qualified version of this part please see    http://www.irf.com/product-info/datasheets/data/ auirf2804s-7p.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

## D[2] Pak - 7 Pin Tape and Reel 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF2804STRL7PP/power-mosfet-n-channel-40-v-160-a-1600-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf2804strl7pp/mosfet-n-ch-40v-160a-to-263ab/dp/2725882RL)
---

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