# Power MOSFET, N Channel, 40 V, 210 A, 0.0036 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657475/)

**URL**: https://novapart.co/products/IRF2204PBF/power-mosfet-n-channel-40-v-210-a-00036-ohm-to
**SKU**: IRF2204PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7310
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 330W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0036ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 0.0036ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657475/)

## IRF2204PbF 

## **Typical Applications** 

Industrial Motor Drive 

## HEXFET[®] Power MOSFET 

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D<br>Features VDSS = 40V<br>Advanced Process Technology<br>Ultra Low On-Resistance<br>R  = 3.6m Ω<br>DS(on)<br>Dynamic dv/dt Rating G<br>175°C Operating Temperature<br>: Fast Switching ID = 210A<br>S<br>**----- End of picture text -----**<br>


## **Features** 

- Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET  utilizes the lastest processing techniques to achieve extremely low  onresistance per silicon area.  Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|a|**Parameter**<br>a<br>~~ee~~|**Max.**<br>a<br>~~al~~|**Units**<br>a<br>~~al~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~ee~~|210<br>~~a~~<br>~~al~~|A<br>~~a~~<br>~~—~~<br>~~al~~|
|ID@ TC= 100°C<br>~~—~~|Continuous Drain Current, VGS@ 10V<br>~~—~~<br>~~ee~~|150<br>~~—~~<br>~~al~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~ee~~<br>~~a~~|850<br>~~al~~<br>~~a~~||
|PD@TC= 25°C<br>~~a~~|Power Dissipation<br>~~ee~~<br>~~a~~|330<br>~~al~~<br>~~a~~|W<br>~~al~~|
|~~ET~~|Linear DeratingFactor<br>~~ET~~|2.2<br>~~ET~~|W/°C<br>~~ET~~|
|VGS<br>~~a~~|Gate-to-Source Voltage|± 20|V|
|EAS<br>~~a~~<br>~~a~~|Single Pulse Avalanche Energy<br><br>|460<br><br>~~A~~<br>|mJ<br><br>~~ee~~<br>|
|IAR<br>~~ee~~<br>~~a~~|Avalanche Current<br>~~ee~~<br>|See Fig.12a, 12b, 15, 16<br>~~ee~~<br>~~A~~<br>|A<br>~~ee~~<br>~~ee~~<br>|
|EAR<br>~~ee~~<br>~~a~~|Repetitive Avalanche Energy<br>~~ee~~<br>||mJ<br>~~ee~~<br>~~ee~~<br>|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>|-55  to + 175<br>~~A~~<br>|~~ee~~<br>|
|~~ee~~<br>~~ee~~|SolderingTemperature, for 10 seconds<br>~~ee~~|300(1.6mm from case)<br>~~ee~~|~~ee~~|
|~~ee~~|Mounting Torque, 6-32 or M3 screw|10 lbf•in (1.1N•m)||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.45|°C/W|
|RθCS|Case-to-Sink,Flat,Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## IRF2204PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es<br>~~ee~~|**Units**<br>es|**Conditions**<br>es|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|40<br>~~ee ~~<br>~~es~~|–––<br> ~~ee ~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~a~~|–––|0.041|–––|V/°C|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~a~~|–––<br>~~es~~|3.0<br>~~ee~~|3.6<br>~~ee~~|mΩ|VGS= 10V, ID= 130A<br>~~®~~|
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~<br>~~ee~~|2.0<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~|4.0<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VDS= 10V, ID= 250µA<br>~~®~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~|120<br>~~es ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|S<br>~~ee~~|VDS= 10V, ID= 130A<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~|20<br>~~ee~~|µA<br>~~ee~~|VDS= 40V, VGS= 0V<br>~~ee~~|
|||–––<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~|250<br>~~ee~~||VDS= 32V, VGS= 0V, TJ= 150°C<br>~~ee~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~**|**~~|–––<br>~~**|**~~<br>~~ee~~|–––|200|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee|–––<br>~~ee~~|-200<br>~~ee~~||VGS= -20V|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee|130<br>~~ee~~|200<br>~~ee~~|nC|ID= 130A<br>VDS= 32V<br>VGS= 10V<br>~~@~~|
|Qgs<br>~~eeee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>ee<br>~~ee~~|35<br>~~ee~~|52<br>~~ee~~|||
|Qgd<br>~~eeee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>ee<br>~~ee~~|39<br>~~ee~~|59<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~CCS~~|–––<br>~~ee~~<br>~~CCS~~|15<br>~~ee~~<br>~~CCS~~|–––<br>~~ee~~<br>~~CCS~~|ns|VDD= 20V<br>ID= 130A<br>RG= 2.5Ω<br>VGS= 10V<br>~~@~~<br>~~@~~|
|tr<br>~~ee~~<br>a|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|140<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|td(off)<br>~~a ee~~|Turn-Off Delay Time<br>~~ee ee~~|–––<br>~~ee~~|62|–––|||
|tf<br>~~a ee~~|Fall Time<br>~~ee ee~~|–––<br>~~ee~~|110|–––|||
|LD<br>~~a ee~~|Internal Drain Inductance<br>~~ee ee~~<br>~~ft~~|–––<br>~~ee~~<br>~~ft~~|~~ft~~|–––<br>~~ft~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~@~~<br>~~&~~|
|LS|Internal Source Inductance<br>~~ft~~|–––<br>~~ft~~|~~ft~~|–––<br>~~ft~~|nH||
|Ciss<br>~~ee~~|Input Capacitance<br>~~CCS~~|–––<br>~~CCS~~|5890<br>~~CCS~~|–––<br>~~CCS~~|pF<br>Re<br>es|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~ee~~<br>ee|Output Capacitance<br>~~CCS~~<br>~~ee~~|–––<br>~~CCS~~<br>~~ee~~|1570<br>~~CCS~~<br>~~ee~~|–––<br>~~CCS~~<br>~~ee~~|||
|Crss<br>~~ee~~<br>ee|Reverse Transfer Capacitance<br>~~CCS~~<br>~~ee~~|–––<br>~~CCS~~<br>~~ee~~|130<br>~~CCS~~<br>~~ee~~|–––<br>~~CCS~~<br>~~ee~~|||
|Coss<br>ee<br>Re|Output Capacitance<br>~~ee~~<br>Re|–––<br>~~ee~~<br>Re|8000<br>~~ee~~<br>Re|–––<br>~~ee~~<br>Re||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>aes|Output Capacitance<br>es|–––<br>es|1370<br>es|–––<br>es||VGS= 0V,  VDS= 32V,  ƒ = 1.0MHz|
|Cosseff.|Effective Output Capacitance|–––|2380|–––||VGS= 0V, VDS= 0V to 32V|
|**Source-Drain Ratings and Characteristics**<br>~~ne~~<br>~~ee ee~~|||||||
|~~ne~~|**Parameter**<br>~~ee ee~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**|
|IS<br>~~ne~~<br>~~**e**~~<br>ee<br>~~Se~~|Continuous Source Current<br>(Body Diode)<br>~~ee ee~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~e~~<br>~~ee~~|–––<br>~~ee~~<br>~~e~~|210<br>~~ee~~<br>~~e~~|~~ee~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~®~~|
|ISM<br>~~ne~~<br>~~**e**~~<br>ee<br>~~Se~~|Pulsed Source Current<br>(Body Diode)<br>~~ee ee~~<br>~~**e**e~~<br>~~s~~|–––<br>~~ee~~<br>~~e~~<br>~~s~~<br>~~ee~~|–––<br>~~ee~~<br>~~e~~<br>~~s~~|850<br>~~ee~~<br>~~e~~<br>~~s~~|||
|VSD<br>~~**e**~~<br>ee<br>~~Se~~<br>~~Ce~~|Diode Forward Voltage<br>~~**e**e~~|–––<br>~~e~~<br>~~ee~~<br>~~es~~|–––<br>~~e~~<br>~~es~~|1.3<br>~~e~~<br>~~ee~~|V|TJ= 25°C, IS= 130A, VGS= 0V<br>~~®~~<br>~~°~~|
|trr<br>~~Se~~<br>~~es~~<br>~~Ce~~|Reverse Recovery Time<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~es~~|68<br>~~es~~<br>~~es~~|100<br>~~es~~<br>~~ee~~|ns<br>~~es~~|TJ= 25°C, IF= 130A<br>di/dt = 100A/µs<br>~~®~~<br>~~°~~|
|Qrr<br>~~Se~~<br>~~Ce~~|Reverse RecoveryCharge|–––<br>~~ee~~<br>~~es~~|120<br>~~es~~|180<br>~~ee~~|nC||
|ton<br>~~Ce~~<br>~~PT~~|Forward Turn-On Time<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~esesee~~<br>~~°~~<br>~~PT~~|||||



## **Source-Drain Ratings and Characteristics** 

|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 130A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>68<br>100<br>ns<br>TJ= 25°C, IF= 130A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>120<br>180<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>210<br>850<br>~~ne~~<br>~~ee ee~~<br>~~**e**e~~<br>ee<br>~~s~~<br>~~ee~~<br>~~Se~~<br>~~®~~<br>~~es~~<br>~~esesee~~<br>~~Ce~~<br>~~°~~<br>~~PT~~|
|---|



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IRF2204PbF 

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 10000  10000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V8.0V ee ee 10V8.0V ee<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br> 1000 5.0V  1000 5.0V<br>Oe BOTTOM 4.5V asisi, a a BOTTOM 4.5V a<br>DB” | = i<br> 100  100 4.5V<br>4.5V<br>SY let FE CET TT WD ZA eeel<br> 10 PACA  10 ”Ml<br>HF ttt a 20µs PULSE WIDTHT  = 25J ° C EE HHH 20µs PULSE WIDTHT  = 175J ° C<br> 1 Tie ttre  1 |<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000.00 2.5<br>ID = 210A<br>a —<br>T = 175°C<br>J<br>2.0<br>ee ee a ee TTT TT La<br>1.5<br>100.00 |> Ate e e eeeneeelPL EE Le ae<br>T = 25°C<br>J  1.0<br>A = SEREPZ EERE<br>0.5<br>ee ee ee ee ee ee<br>VDS = 25V<br>10.00 ee 20µs PULSE WIDTH 0.0 FL i tttE LL V GS = 10V<br>4.0 5.0VGS, Gate-to-Source Voltage (V)6.0 7.0 8.0 9.0 10.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(    C)° 140 160 180<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRF2204PbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>—=aee Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>C  = C + C<br>10000 a i oss   ds  gd<br>Ciss<br>eee ee 5 rr<br>Coss<br>ee ee<br>1000<br>a SE Sl<br>Fy ET a Crss EET<br>100<br>Sa l<br>10 es<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br>T  = 175      CJ °<br> 100 nee 2.4Asee e ee<br>Ee ee eee eee eee<br> 10<br>pj vy | | tt |<br>Ea ee | | P| ft<br>T  = 25      CJ °<br> 1 IE<br>rT|ftfTefF [. -. [_ [,[|]<br>a ee eee<br>ee V      = 0 V GS<br>0.1<br>0.0 0.5 1.0 1.5 2.0 2.5<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12<br>ID = 130A<br>Pd VDS =  32V |]]<br>VDS =  20V<br>10 aaa n/n<br>8 WA<br>6<br>Pit | dP A<br>4 PEPiAyettT | Ettt tt<br>2<br>0 Yittt<br>0 30 60 90 120 150<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000 PPEn meee<br>Poe |As<br>100 SE 100µsec<br>PTT dT ES 1msec i<br>10 Pe 4b<br>Tc = 25°C 10msec<br>ee ee ee<br>Tj = 175°C eneee eee<br>Single Pulse<br>1 SSS at<br>1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRF2204PbF 

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250<br>LIMITED BY PACKAGE<br>200 Eba y ay pe Vos Rp |<br>Ps ae Vvv D.U.T.<br>Re<br>-<br>150 Pt| =RSEEE }} tov V<br>PTT [TAPS] Ey ≤ 1  op<br>N Duty Factor ≤ 0.1 %<br>100 PTPit eT AEERELL Fig 10a.   Switching Time Test Circuit buyFacer °<br>50 PET EE EEEN<br>VDS<br>0 TCEPi ti tT | ty et 90% \— |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° 10% /\ /\ ||<br>Fig 9.   Maximum Drain Current Vs. VGS |\« le >|KTpl<<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 1<br>po<br>po Ee<br>pf D = 0.50 tt Eff er<br>Sean OSS SGU 11 NO ee OLLI LLL EL<br>0.1 L 0.20 N = el<br>SS 0.10 S re |<br>SS ee<br>popm e 0.050.02 Aeeenemer SINGLE PULSE aePE ee ee<br>0.01 (THERMAL RESPONSE) P DM<br>ae el<br>0.01 poet tt tt t 1<br>Ppa eeoo<br>a ee eee eee ee t 2<br>a a eeee OeeeOO eeeGG GG OO GO OO<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRF2204PbF 

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900<br>15V I D<br>750 IN TOP 52A 91A<br>L ¢ DRIVER NPAL e BOTTOM 130A<br>VDS<br>PN |EE<br>600<br>R G D.U.T + KIN|<br>- [V][DD]<br>1 IAS A 450 GNENEE EEE<br>20V<br>poe  Unclamped Inductive Test Circuittp 0.01 Ω 300 INAPPENNANTANATKALETL TE<br>V(BR)DSS(BR)DSS<br>._ tp 150 PEpotRANSSA<br>0<br>/ 25 Pet 50 TP 75 100 TP 125 SS 150 175<br>Starting Tj, Junction Temperature (   C)°<br>/ |<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** 

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._ tp V(BR)DSS(BR)DSS<br>/<br>/ |<br>IAS a a<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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wwf QGS / ~ QQ ~ GDG<br>VG<br>**----- End of picture text -----**<br>


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4.0 E EE EEL<br>3.5<br>3.0<br>E SURRRREEEE ID = 250µA<br>2.5<br>PSS<br>2.0<br>P ooch<br>1.5 P ELE LLING<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>SER HER EERE<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


Charge = 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>a<br>50K Ω<br>12V .2 µ F<br>lt .3 µ F<br>+<br>D.U.T. -VDS<br>VGS<br>ro |<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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## IRF2204PbF 

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1000<br>Duty Cycle = Single Pulse<br>ee |<br>0.01<br>RSF] ff} Allowed avalanche Current vs<br>100 UE avalanche  | pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>0.05 avalanche losses<br>C H ET<br>PSE T R RS<br>0.10<br>TT EERSTE ETI<br>10 O E T a ge<br>8 |<br>Pot TTee<br>a en |<br>NN<br>1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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500<br>TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>400 ID = 210A<br>300 N I SNSSBNNT<br>200 I N<br>100<br>A EEIN AL~E<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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7 

## IRF2204PbF 

**==> picture [273 x 443] intentionally omitted <==**

**----- Start of picture text -----**<br>
‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>‘<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current @ Current =, =<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


## For N-channel HEXFET[®] power MOSFETs 

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8 

## IRF2204PbF 

**==> picture [221 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS  AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IN THE ASS EMBLY LINE "C" LOGO TOR17 o19c89 DATE CODE<br>Note: "P" in assembly line position ASSEMBLY YEAR 0 =  2000<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **TO-220AB package is not recommended for Surface Mount Application.** 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/** 

**2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Notes: ® Repetitive rating;  pulse width limited by ~~®~~ Cossoss eff. is a fixed capacitance that gives the same charging time 

   - ~~®~~ Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

- max. junction temperature. (See fig. 11). 

- @ Starting TJ = 25°C, L = 0.06mH © Calculated continuous current based on maximum allowable RG = 25 Ω , IAS = 130A. (See Figure 12). junction temperature. Package limitation current is 75A. 

- T ® ISD J ≤≤ 175°C. 130A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, @ Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive ® Pulse width ≤ 400µs; duty cycle ≤ 2%. avalanche performance. 

      - Calculated continuous current based on maximum allowable 

   - junction temperature. Package limitation current is 75A. @ Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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9 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irf2204pbf/mosfet-n-40v-210a-to-220/dp/8657475)
---

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