# Power MOSFET, N Channel, 200 V, 12 A, 0.17 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2709978/)

**URL**: https://novapart.co/products/IRF200B211/power-mosfet-n-channel-200-v-12-a-017-ohm-to-220ab
**SKU**: IRF200B211
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5870
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.135ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.17ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709978/)

Strong _IR_ FET™ IRF200B211 

## ~~ToRRecifier~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free*RoHS Compliant, Halogen-Free 

HEXFET[® ] Power MOSFET 

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||||
|---|---|---|
|D|VDSS|200V|
|RDS(on) typ.|135m||
|G|
|max|170m||
|S|ID (Silicon Limited)|12A|
|3)|
|S|
|D|
|G|
|TO-220AB|
|IRF200B211|
|G|D|S|
|Gate|Drain|Source|

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||||||
|---|---|---|---|---|
|Base part number|Package Type|Standard Pack|Orderable Part Number|
|Form|Quantity|
|IRF200B211|TO-220|Tube|50|IRF200B211|

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500<br>ID = 7.2A<br>450<br>TOLL<br>400<br>SURAT<br>350<br>PEEL E TJ  LE = 125°C<br>300<br>COREE<br>250<br>SeReeneen<br>200<br>PEEL ELE TJ = 25°C<br>150<br>PPREEEE<br>100<br>-CSEEEEEE<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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14<br>12<br>Pf tt<br>A<br>10 TONE<br>8<br>NT<br>6<br>4 ro<br>\<br>2<br>| {i}<br>0<br>pt tt [tt]<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback              March  31, 2015 ~~Ie~~ 

IRF200B211 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS@10V(Silicon Limited)|12|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|9.0||
|IDM|Pulsed Drain Current|34||
|PD @TC= 25°C|Maximum Power Dissipation|80|W|
||Linear DeratingFactor|0.53|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds (1.6mm from case)|300||
||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||



## **Avalanche Characteristics** 

|**Avalanche Characteristics**|**Avalanche Characteristics**||||||||
|---|---|---|---|---|---|---|---|---|
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy ||||||88|||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy||||||72||mJ|
|EAS (tested)<br>Single Pulse Avalanche Energy  Tested Value||||||98|||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy||||||See Fig 15, 16, 23a, 23b||A<br>mJ|
|**Thermal Resistance**|||||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.88<br>°C/W<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>~~——___—_—~~|||||||||
|**Static @ TJ = 25°C (unless otherwise specified)**|||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**<br>**Conditions**|||||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|200|–––|–––|||V<br>VGS= 0V,ID= 250µA|||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|0.21|–––||V/°C<br>Reference to 25°C, ID= 1mA|||= 1mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––|135|170|||m<br>VGS= 10V,ID= 7.2A|||
|VGS(th)<br>Gate Threshold Voltage|3.0|–––|4.9|||V<br>VDS =VGS, ID =50µA|||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|20<br>250|||µA<br>VDS =200V, VGS =0V<br>VDS =160V,VGS =0V,TJ||=125°C|
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100|||nA<br>VGS= 20V<br>VGS = -20V|||
|RG<br>Gate Resistance|–––|2.7|–––||||||



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

- Limited by TJmax, starting TJ = 25°C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. 

-  ISD  7.2A, di/dt  1184A/µs, VDD  V(BR)DSS, TJ  175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V. 

-   This value determined from sample failure population, starting TJ = 25°C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. 

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IRF200B211 ~~hs~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|13|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 50V,ID= 7.2A|
|Qg<br>~~a~~|Total Gate Charge|–––|15.3|23|nC|ID= 7.2A<br>VDS= 100V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|5.1|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|5.6|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|10.2|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|6.5<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 130V<br>ID= 7.2A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|9.5<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|11.3<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|6.5|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|790|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,  See Fig.TBD<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|62|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|21|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|66<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 160V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|83<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 160V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|12<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|34<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~<br>|–––<br>~~a~~<br>|~~a~~<br>|1.3<br>~~a~~<br>|V<br>~~a~~<br>|TJ= 25°C, IS= 7.2A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~popp~~|Peak Diode Recoverydv/dt<br>~~pp~~|–––<br>|32.5<br>|–––<br>|V/ns T<br>|V/ns TJ=175°C,IS= 7.2A,VDS= 200V|
|trr<br>~~popp~~|Reverse Recovery Time<br>~~pp~~|–––<br>|68<br>|–––<br>|ns<br>|TJ =25°CVDD= 100V<br>TJ =125°CIF= 7.2A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>|83<br>|–––<br>|||
|Qrr<br>~~ppee~~|Reverse Recovery Charge<br>~~ppee~~|–––<br>~~eee~~|195<br>~~eee~~|–––<br>~~eee~~|nC<br>~~eee~~||
|||–––<br>~~eee~~|280<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~ee~~<br>~~es~~|Reverse Recovery Current<br>~~ee ~~|–––<br> ~~eee~~|4.3<br>~~eee~~|–––<br>~~eee~~|A<br>~~eee~~||



3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback              March 31, 2015 ~~=H~~ 

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         IRF200B211<br><c.}.§»pspr_”,—dOC . .. GT<br>100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>10 5.5V 5.5V<br>5.25V 5.25V<br>BOTTOM 5.0V 10 BOTTOM 5.0V<br>1<br>5.0V<br>1<br>0.1<br>5.0V<br>60µs PULSE WIDTH  60µs PULSE WIDTH<br>0.01 — Tj = 25°C 0.1 si Tj = 175°C<br>Pee<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>100 3.0<br>I D  = 7.2A<br>2.5 VGS = 10VGS = 10V= 10V<br>10 Enecle +4<br>2.0<br>1 1.5<br>1.0<br>0.1<br>0.5<br>0.01 aan 0.0 EEE<br>2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


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3.0<br>I D  = 7.2A<br>2.5 VGS = 10VGS = 10V= 10V<br>+4<br>2.0<br>1.5<br>1.0<br>0.5<br>EEE<br>0.0<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14<br>ID = 7.2A<br>12<br>VDS= 160V<br>10 VDS= 100V<br>VDS= 40V<br>8<br>6<br>7<br>4<br>Sane<br>2<br>foo<br>0<br>0 4 8 12 16 20 24<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>1000<br>Ciss<br>100 | Coss on<br>ae tt<br>Crss<br>10 NS<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs.Gate-to-Source Voltage 

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LR<br>**----- End of picture text -----**<br>


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100<br>10<br>TJ = 175°C T J  = 25°C<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>250<br>Id = 1.0mA<br>225<br>200<br>175<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Drain-to-Source Breakdown Voltage 

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100<br>OPERATION IN THIS AREA LIMITED BY RDS (on)<br>1 00µ sec<br>10<br>1msec<br>1<br>10msec<br>DC<br>0.1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.01<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

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1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 20 40 60 80 100 120 140 160 180 200<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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800 ee eee<br>VGS = 6.0V<br>700 | | | fytt VGS = 7.0V |<br>| VGS = 8.0V { |<br>600 | | tt VGS = 10V NK || 4<br>500 | | {| | | | Key<br>| |} | | | Ye<br>400 | [ft }| | | | |<br>| if {| {| {| lA} |<br>300 | if | | | ot<br>200 | “A | | ey | |<br>100<br>0 10 20 30 40<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On– Resistance vs. Drain Current 

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IRF200B211 ~~LT~~ 

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10<br>1 D = 0.50<br>CTT Te 0.20<br>0.10<br>0.1 0.05<br>Sey 0.02 ee I<br>0.01<br>0.01<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>sir al OfN)/EH) BAB 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>ilPA<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>TT<br>10<br>ol<br>Ee<br>1<br>Beni Donat a xa<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>ae<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>| ebiiioment<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>100<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1.0% Duty Cycle<br>1.Avalanche failures assumption:<br>80 ID = 7.2A Purely a thermal phenomenon and failure occurs at a<br>NIT<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>60 2. Safe operation in Avalanche is allowed as long asTjmax is not<br>   exceeded.<br>SS<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>40 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>NS<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>TDN 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>0 LS. tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>25 50 75 100 125 150 175<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJCav) = T/ ZthJC) = T/ ZthJCT/ ZthJCT/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJCav) = T/ ZthJC) = T/ ZthJCT/ ZthJCT/ ZthJCthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRF200B211 ~~[~~ 

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6.0<br>5.0<br>I<br>4.0<br>SS |<br>Pay<br>SA<br>3.0<br>ID = 50µA<br>2.0 ID = 100µA<br>ID = 250µA<br>ID = 1.0mA<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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25<br>IF = 4.8A<br>VR = 100V<br>20<br>TJ = 25°C<br>TJ = 125°C<br>15<br>| =thbe<br>ee<br>Ler yy<br>10<br>5<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
25<br>IF = 7.2A<br>VR = 100V<br>20<br>TJ = 25°C<br>TJ = 125°C ee<br>bl<br>15<br>ela<br>oe<br>oA<br>10 4<<br>WY<br>5 , YW,<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
700<br>TTT.<br>IF = 4.8A<br>600 VR = 100V<br>T J  = 25°C<br>500 TJ = 125°C SEER<br>Pty<br>ee<br>400 TT<br>ee<br>ee eet<br>300 PyabetT Ty<br>=<br>200 ee<br>ce ee<br>ee<br>100<br>ne<br>a<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
700<br>[TTT<br>IF = 7.2A<br>Pty<br>600 V R  = 100V TTT<br>500 T J  = 25°C Peer<br>TJ = 125°C Pb TT<br>400 aa<br>Pape<br>300 ef |peer| TP rT<br>> ee<br>200 lar tT [tr]<br>ee<br>ee<br>100<br>ee<br>0 Se<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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~~I6éR~~ 

IRF200B211 ~~[~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>20V a IAS<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th) '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRF200B211 ~~Ss~~ 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~16aR~~ 

IRF200B211 ~~|~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

10 www.irf.com ~~=~~ 

~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF200B211/power-mosfet-n-channel-200-v-12-a-017-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf200b211/mosfet-n-ch-200v-12a-to-220ab/dp/2709978)
---

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