# Power MOSFET, N Channel, 75 V, 142 A, 0.0058 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2781903/)

**URL**: https://novapart.co/products/IRF1607PBF/power-mosfet-n-channel-75-v-142-a-00058-ohm-to
**SKU**: IRF1607PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 380W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 380W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0058ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 142A |
| Drain Source On State Resistance | 0.0058ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781903/)

## IRF1607PbF 

**Typical Applications** Industrial Motor Drive 

## **Benefits** 

Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 75V<br>R  = 0.0075 Ω<br>DS(on)<br>G<br>ID = 142A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This Stripe Planar design of HEXFET[®] Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of  applications. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|a|**Parameter**<br>a|**Max.**<br>a|**Max.**<br>a|**Units**<br>a|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~<br>~~—————~~<br>~~oo~~|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~—————~~<br>~~oo~~|142<br>~~a~~<br>3<br>~~—————~~||A<br>~~i~~|
|ID@ TC= 100°C<br>~~—————~~<br>~~oo~~|Continuous Drain Current, VGS@ 10V<br>~~—————~~<br>~~oo~~|100<br>~~—————~~|||
|IDM<br>~~—————~~<br>~~oo~~|Pulsed Drain Current<br>~~—————~~<br>~~oo~~|570<br>~~—————~~|||
|PD@TC= 25°C<br>~~oo~~<br>~~NN~~|Power Dissipation<br>~~oo~~<br>~~ooo~~|380<br>~~ooo~~||W<br>~~i~~<br>~~ooo~~|
|~~NN~~|Linear DeratingFactor<br>~~ooo~~|2.5<br>~~ooo~~||W/°C<br>~~ooo~~|
|VGS<br>~~NN~~<br>~~oo~~|Gate-to-Source Voltage<br>~~ooo~~<br>~~oo~~|± 20<br>~~ooo~~<br>~~J~~<br>~~oo~~||V<br>~~ooo~~<br>~~oo~~|
|EAS<br>~~NN~~<br>~~oo~~|Single Pulse Avalanche Energy<br>~~ooo~~<br>~~oo~~|1250<br>~~ooo~~<br>~~oo~~||mJ<br>~~ooo~~<br>~~oo~~|
|IAR<br>~~ee~~<br>~~es~~|Avalanche Current<br>~~ee~~<br>~~es~~|See Fig.12a, 12b, 15, 16<br>~~es~~||A<br>~~es~~|
|EAR<br>~~es~~|Repetitive Avalanche Energy<br>~~es~~|||mJ<br>~~es~~|
|dv/dt<br>~~TE~~|Peak Diode Recoverydv/dt<br>~~TE~~|5.2<br>~~TE~~||V/ns<br>~~TE~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C|
||SolderingTemperature, for 10 seconds|300(1.6mm from case)|||
|~~TE~~|Mounting Torque, 6-32 or M3 screw<br>~~TE~~|10 lbf•in (1.1N•m)<br>~~TE~~||~~TE~~|
|**Thermal Resistance**|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.40|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.40||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62||
|www.irf.com||||1|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>en|**Min.**<br>en<br>~~es~~<br>~~ss~~|**Typ. **<br>en<br>~~ss~~|**Max.**<br>en<br>~~ss~~|**Units**<br>en|**Conditions**<br>en|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|75<br>~~es~~<br>~~es~~<br>~~ss~~|–––<br>~~es~~<br>~~ss~~|–––<br>~~es~~<br>~~ss~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~ss~~<br>~~es~~|0.086 <br>~~ss~~|–––<br>~~ss~~|V/°C|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~|0.00580.0075|0.00580.0075|Ω|VGS= 10V, ID= 85A<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|2.0<br>~~es~~|–––|4.0|V|VDS= 10V, ID= 250µA<br>~~@~~|
|gfs|Forward Transconductance<br>~~|~~<br>~~EEE~~|79<br>~~|~~<br>|<br>~~EEE~~|–––<br>|<br>~~|~~<br>~~EEE~~|–––<br>~~|~~<br>~~EEE~~|S<br>~~EEE~~|VDS= 25V, ID= 85A<br>~~EEE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~|~~<br>~~EEE~~|–––<br>~~|~~<br>|<br>~~EEE~~|–––<br>|<br>~~|~~<br>~~EEE~~|20<br>~~|~~<br>~~EEE~~|µA<br>~~EEE~~|VDS= 75V, VGS= 0V<br>~~EEE~~|
|||–––<br>~~|~~<br>|<br>~~EEE~~|–––<br>|<br>~~|~~<br>~~EEE~~|250<br>~~|~~<br>~~EEE~~||VDS= 60V, VGS= 0V, TJ= 150°C<br>~~EEE~~|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|200|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-200||VGS= -20V|
|Qg<br>ee|Total Gate Charge|–––|210|320|nC|ID= 85A<br>VDS= 60V<br>VGS= 10V|
|Qgs<br>ee|Gate-to-Source Charge|–––|45|68|||
|Qgd<br>ee|Gate-to-Drain("Miller")Charge|–––|73|110|||
|td(on)<br>ee|Turn-On Delay Time<br>~~en~~|–––<br>~~en~~|22<br>~~en~~|–––<br>~~en~~|ns|VDD= 38V<br>ID= 85A<br>RG= 1.8Ω<br>VGS= 10V<br>)|
|tr<br>ee<br>ee|Rise Time<br>~~en~~|–––<br>~~en~~|130<br>~~en~~|–––<br>~~en~~|||
|td(off)<br>ee<br>ee<br>~~ee~~|Turn-Off Delay Time<br>~~en~~|–––<br>~~en~~|84<br>~~en~~|–––<br>~~en~~|||
|tf<br>ee<br>~~ee~~|Fall Time|–––|86|–––|||
|LD<br>~~ee~~<br>~~EF~~|Internal Drain Inductance<br>~~EF~~|–––<br>~~EF~~|4.5<br>~~EF~~|–––<br>~~EF~~|nH<br>~~EF~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>)<br>~~&~~|
|LS<br>~~ee~~<br>~~EF~~<br>~~es~~|Internal Source Inductance<br>~~EF~~<br>~~es~~|–––<br>~~EF~~|7.5<br>~~EF~~|–––<br>~~EF~~|nH<br>~~EF~~||
|Ciss<br>~~EF~~<br>~~es~~<br>es|Input Capacitance<br>~~EF~~<br>~~es~~|–––<br>~~EF~~|7750<br>~~EF~~|–––<br>~~EF~~|pF<br>~~EF~~<br>7|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~&~~<br>Ps|
|Coss<br>~~es~~<br>es|Output Capacitance<br>~~es~~|–––|1230|–––|||
|Crss<br>~~es~~<br>es<br>ee|Reverse Transfer Capacitance<br>~~es~~|–––|310|–––|||
|Coss<br>~~es~~<br>es<br>ee<br>es|Output Capacitance<br>~~es~~<br>esGs|–––<br>Gs|5770|–––||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Ps<br>Ps|
|Coss<br>es<br>ee<br>es|Output Capacitance<br>esGs|–––<br>Gs|790|–––||VGS= 0V,  VDS= 60V,  ƒ = 1.0MHz<br>Ps<br>Ps|
|Cosseff.<br>es<br>es|Effective Output Capacitance<br> esGs|–––<br>Gs|1420|–––||VGS= 0V, VDS= 0V to 60V<br>Ps|
|**Source-Drain Ratings and Characteristics**<br>es<br>7|||||||
|~~>~~|**Parameter**<br>~~>~~|**Min.**<br>~~>~~|**Typ. **<br>~~>~~|**Max.**<br>~~>~~|**Units**|**Conditions**|
|IS<br>~~>~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~>~~<br>~~ee~~|–––<br>~~>~~<br>~~ee~~|–––<br>~~>~~<br>~~ee~~|142<br>~~>~~<br>~~ee~~|~~ff~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>a<br>~~®~~|
|ISM<br>~~ee~~<br>~~Po~~<br>~~Se~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~<br>~~Po~~<br>|–––<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~ff~~|570<br>~~ee~~<br>~~ff~~|||
|VSD<br>~~Po~~<br>~~Seee~~|Diode Forward Voltage<br>~~Po~~<br>~~ee~~|–––<br>~~|~~|–––<br>~~ff~~|1.3<br>~~ff~~|V<br>~~ff~~|TJ= 25°C, IS= 85A, VGS= 0V<br>~~®~~<br>~~:~~|
|trr<br>~~Po~~<br>~~Seee~~|Reverse Recovery Time<br>~~Po~~<br>~~ee~~|–––<br>~~|~~|130<br>~~ff~~|200<br>~~ff~~|ns<br>~~ff~~|TJ= 25°C, IF= 85A<br>di/dt = 100A/µs<br>~~®~~<br>~~:~~|
|Qrr<br>~~Po~~<br>~~Seee~~|Reverse RecoveryCharge<br>~~Po~~<br>~~ee~~|–––<br>~~| ~~|690<br> ~~ff~~|1040<br>~~ff~~|nC<br>~~ff~~||
|ton<br>~~ee~~|Forward Turn-On Time<br>~~ee~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~:~~|||||



|**Source-Drain Ratings and Characteristics**|
|---|
|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 85A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>130<br>200<br>ns<br>TJ= 25°C, IF= 85A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>690<br>1040<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>142<br>570<br>~~>~~<br>~~ee~~<br>a<br>~~| ff~~<br>~~Po~~<br>~~®~~<br>~~Seee~~<br>~~:~~|
|Repetitive rating;  pulse width limited by<br>max. junction temperature. (See fig. 11).<br>Starting TJ= 25°C, L = 0.21mH<br>Cosseff. is a fixed capacitance that gives the same charging time<br>as Cosswhile VDSis rising from 0 to 80% VDSS.<br>Calculated continuous current based on maximum allowable|



Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Calculated continuous current based on maximum allowable 

- RG = 25 Ω , IAS = 85A, VGS=10V (See Figure 12). 

junction temperature. Package limitation current is 75A. 

ISD ≤ 85A, di/dt ≤ 310A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

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 1000<br>VGS<br>TOP 15V<br>10V<br>LE  —< 8.0V a a DP”<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>WA e a<br> 100<br>4.5V<br>ge P SE<br> 10 4A NN<br>4.5V<br>20µs PULSE WIDTH<br>RT| Tj = 25°C 1 T_TG e 20µs PULSE WIDTHT  = 175J °C<br> 1<br>1 10 100 0.1  1  10  100<br>VDS, Drain-to-Source Voltage (V) V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>3.0<br>ID = 142A<br>ee<br>=S >a >a 2.5 E EE<br>4enneeen FT tT EEE L_L_L_LLLY<br>2.0<br>| | || | PEPE<br>PTT tee TEL [LYE]<br>° e 1.5 PETECCU ELL YELL<br>1.0<br>f Ee<br>SeCCCCELE EL<br>0.5<br>V      = 25VDSDS<br>S] 20µs PULSE WIDTH 0.0 FERRFT t_tEt_ t T el ER VGS = 10V<br>7.0 8.0 9.0 10.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>                   10V LE  —<<br>                   8.0V<br>                   7.0V<br>                   6.0V<br>                   5.5V<br>100                5.0V WA<br>BOTTOM  4.5V<br>Yo<br>10<br>7 20<br>4.5V<br>20µs PULSE WIDTH<br>ant RT| Tj = 25°C<br>1 Saiilinn 1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br> 1000 Se<br>=== =S >a >a<br>T  = 175  CJ °<br> 100 fT’ 4enneeen<br>a | | || |<br>SS<br>Sy<br>oF o T  = 25  CJ ° e<br> 10<br>p f<br>SanaGeneeean<br>V      = 25VDSDS<br>P S] 20µs PULSE WIDTH<br> 1<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>12000 ID = 85A<br>VGS   = 0V,       f = 1 MHZ<br>10000 = : CCrss  iss    = C  = Cgd gs + Cgd,   Cds    SHORTED 16 CT VVVDSDSDS ===  60V 37V 15V oe<br>Ciss Coss   = Cds + Cgd<br>TT a SS<br>8000 SS a Ane<br>12<br>e e ll 4a<br>6000<br>E I gf<br>r i 8 WA<br>4000 Coss<br>Sc t ty EEE<br>4<br>2000 a | Ane<br>Crss FOR TEST CIRCUIT<br>a e Ann SEE FIGURE       13<br>Ora EE TT 0<br>0 0 100 200 300 400<br>1 10 100 Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 10000<br>OPERATION IN THIS AREA<br>T  = 175  CJ ° LIMITED BY R DS(on)<br> 100 1000<br>ee ee Rae RS E<br> 10 100<br>ff ||| | | pT 100µsec TT<br>T  = 25  CJ ° 1msec<br> 1 oii . . ==== 10 S SS ti ese at t<br>Tc = 25°C<br>Tj = 175°C 10msec<br>0.1 TOILE ELL V      = 0 V GS 1 eee Single Pulse |<br>0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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160<br>LIMITED BY PACKAGE<br>TTT are<br>(Oo (pron<br>120<br>-<br>COREE s l ‘<br>N<br>80 CCRee > | 2Pulse Width ≤ 1  us<br>≤ 0.1 %<br>Po] Fig 10a.   Switching Time Test Circuit<br>40<br>VDS<br>CN 90% —<br>0<br>25 50 75 100 125 150 175<br>CPT T   , Case TemperatureC (  C)° 7<br>10% /\_\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 1<br>a ee ee eee er ee<br>D = 0.50<br>oe<br>0.1 0.20<br>e r<br>——— ee —— — ———et<br>ee 0.10 ee<br>toto<br>0.05<br>e e eee eel<br>0.02 Se an LR PDM<br>0.01 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t1<br>t2<br>a ee<br>Notes:<br>a eelee<br>1. Duty factor D = t   / t1 2<br>a lll 2. Peak T J = P DM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>E 20VVGS T<br>tp 0.01 Ω<br>P ry<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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— tp ‘| V(BR)DSS<br>/<br>|<br>IAS 7<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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 * QG<br>10V.<br>; QGS / QGD<br>VG<br>Charge<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>ae<br>50K Ω<br>12V .2 µ F<br>oe, .3 µ F<br>LLEE +<br>D.U.T. -VDS<br>VGS<br>3mA<br>a@ |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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3000<br>ID<br>2500 PtNERTT | TOP 35A 60A<br>BOTTOM 85A<br>P\ [Pt]<br>2000 PINE<br>1500 EeNeKETA eee<br>BNEKGR EEE<br>TP Tt<br>NeNE NESE<br>1000 PE ANEN| EE<br>500 PT ESNSANUE<br>0 Pt SS<br>25 50 75 100 125 150 175<br>pot dT SWS A °<br>Starting T  , Junction TemperatureJ (  C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>5.0 P ELE ELL<br>4.0<br>P Et PET Ey Lt<br>ID = 250µA<br>N E E<br>3.0<br>S ERENE a<br>PEL [ELA]<br>2.0<br>P ETE EPN<br>PELE ELA<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>PET  EET TT<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>Be EER A Et Allowed avalanche Current vs<br>100 0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>0.05<br>a e n<br>0.10<br>10<br>PEA PE rH<br>1<br>PL LUVIN PTI PI TE ETI PE) Po<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>1400 T o TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:(For further info, see AN-1005 at www.irf.com)<br>anim BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>1200 N C ID = 85A     temperature far in excess of T  Purely a thermal phenomenon and failure occurs at ajmax. This is validated for<br>1000     every part type.<br>N ACE 2. Safe operation in Avalanche is allowed as long asTjmax is<br>aNNS See   not exceeded.<br>800<br>C ASTE 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>600 P LINAE EEE EE 4. PD (ave) = Average power dissipation per single<br>TOP NSE     avalanche pulse.<br>400 P LS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>S N     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>200 P LE REE<br>C OCs 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>i     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>S<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 1997 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR 719¢<br>1789 DATE CODE<br>Note: "P" inassembly line position ASSEMBLY YEAR 7 =  1997<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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