# Power MOSFET, N Channel, 75 V, 100 A, 7800 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1298527/)

**URL**: https://novapart.co/products/IRF1407STRLPBF/power-mosfet-n-channel-75-v-100-a-7800-ohm-to-263
**SKU**: IRF1407STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7710
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissip

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 7800µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1298527/)

~~Cinfin eon~~ 

IRF1407SPbF IRF1407LPbF ~~po~~ 

## **Benefits** 

HEXFET[® ] Power MOSFET 

- Advanced Process Technology 

 Ultra Low On-Resistance **VDSS 75V**  Dynamic dv/dt Rating  175°C Operating Temperature **RDS(on) 0.0078**   Fast Switching  Repetitive Avalanche Allowed up to Tjmax ~~——~~ **ID 100A**   Lead-Free D **Description** D Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, S S G G[D ] combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, D2 Pak TO-262 Pak provides the designer with an extremely efficient and reliable IRF1407SPbF IRF1407LPbF device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of **G D S** accommodating die sizes up to HEX-4. It provides the highest Gate Drain Source power capability and the lowest possible on-resistance in any ~~a~~ existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for low-profile applications. **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** ~~IRF1407LPbF TO-262 Tube 50 IRF1407LPbF~~ ( **Obsolete)** ~~<a~~ IRF1407SPbF D2-Pak Tape and Reel Left 800 IRF1407STRLPbF **Absolute Maximum Ratings Symbol Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  70 A IDM Pulsed Drain Current  520 PD @TA = 25°C Maximum Power Dissipation 3.8 W ~~————— ee~~ PD @TC = 25°C Maximum Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy (Thermally Limited)  390 mJ IAR Avalanche Current  See Fig.15,16, 12a, 12b A EAR Repetitive Avalanche Energy  mJ dv/dt Peak Diode Recovery dv/dt 4.6 V/ns ~~——————~~ TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 ~~pf~~ Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) **Thermal Resistance Symbol Parameter Typ. Max. Units** RJC Junction-to-Case ––– 0.75 °C/W ~~——————~~ RJA Junction-to-Ambient ( PCB Mount, steady state ~~ee~~ )  ––– ~~rn~~ 40 1 2016-5-26 ~~re~~ 

~~Cinfin eon~~ 

IRF1407S/LPbF ~~[I~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~PP~~<br>~~es~~|**Parameter**<br>~~PP~~<br>~~I~~|**Min.**<br>~~I~~|**Typ. Max. Units**<br>~~QD~~|**. Max. Units**<br>~~QD~~|**. Max. Units**<br>~~QO (~~|**. Max. Units**<br>**Conditions**<br>~~(~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~PP~~<br>~~es~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~PP~~<br>~~I~~<br>~~tI~~|75<br>~~I~~<br>~~tI~~|–––<br>~~QD~~<br>~~tt) I~~|–––<br>~~QD~~<br>~~I~~|V<br>~~QO (~~|VGS =0V, ID =250µA<br>~~(~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~es~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~I ~~<br>~~tI~~|–––<br> ~~I~~<br>~~tI~~|0.09<br>~~QD~~<br>~~tt) I~~|–––<br>~~QD ~~<br>~~I~~|V/°C Reference to 25°C<br> ~~QO (~~|V/°C Reference to 25°C,ID= 1mA<br>~~(~~|
|RDS(on) <br>~~ee~~<br>~~PF~~<br>~~Pe~~|Static Drain-to-Source On-Resistance<br>~~tI~~<br>~~Pe~~|–––<br>~~tI ~~<br>~~ee~~|––– 0.0078<br> ~~tt) I~~<br>~~ee~~|––– 0.0078<br>~~I~~<br>~~ee~~|––– 0.0078<br><br>~~ee~~|VGS= 10V,ID= 78A<br>~~ee~~<br>~~ee~~|
|VGS(th)<br>~~PF~~<br>~~Pe~~|Gate Threshold Voltage<br>~~Pe~~|2.0<br>~~ee~~|–––<br>~~ee~~|4.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA<br>~~ee~~<br>~~ee~~|
|gfs<br>~~PF~~<br>~~Pe~~|Forward Trans conductance<br>~~Pe~~<br>~~|~~|74<br>~~ee ~~<br>~~|~~|–––<br> ~~ee ~~<br>|–––<br> ~~ee ~~<br>|S<br> ~~ee~~<br>|VDS =25V, ID =78A<br>~~ee~~<br>~~ee~~<br>|
|IDSS<br>~~A ES~~|Drain-to-Source Leakage Current<br>~~|~~<br>~~ES~~<br>~~a~~|–––<br>~~|tT~~<br>~~ES~~|–––<br>~~tT~~<br>~~ES~~|20<br>~~tT~~<br>~~ES~~|µA<br><br>~~ES~~|VDS =75 V, VGS =0V<br>~~Po~~<br>~~ES~~|
|||–––<br>~~|tT~~<br>~~ES~~<br>~~Gn Gn~~|–––<br>~~tT~~<br>~~ES~~<br>~~Gn~~|250<br>~~tT~~<br>~~ES~~||VDS =60V,VGS =0V,TJ =150°C<br>~~Po~~<br>~~ES~~<br>~~Po~~|
|IGSS<br>~~A ES~~<br>~~FO~~<br>~~ee~~|Gate-to-Source Forward Leakage<br><br>~~ES~~<br>~~a~~<br>~~FO~~|–––<br>~~tT~~<br>~~ES~~<br>~~Gn Gn~~<br>~~FO~~|–––<br>~~tT~~<br>~~ES~~<br>~~Gn~~<br>~~FO~~|200<br>~~tT ~~<br>~~ES~~<br>~~FO~~|nA<br> <br>~~ES~~<br>~~FO~~|VGS =20V<br> ~~Po~~<br>~~ES~~<br>~~Po~~<br>~~FO~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~FO~~|–––<br>~~Gn Gn~~<br>~~FO~~|~~Gn~~<br>~~FO~~|-200<br>~~FO~~||VGS = -20V<br>~~Po~~<br>~~FO~~|
|Qg<br>~~ee~~|Total Gate Charge|–––|160|250|nC|ID= 78A<br>VDS= 60V<br>VGS= 10V|
|g<br>Qgs<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge|–––|35|52|||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge|–––|54|81|||
|gd<br>td(on)<br>~~ee~~<br>~~ee~~|Turn-On Delay Time|–––|11|–––|ns<br>~~+++),~~|VDD= 38V<br>ID=78A<br>RG= 2.5<br>VGS= 10V<br>~~+++),~~<br>~~&~~|
|d(on)<br>tr<br>~~ee~~|Rise Time|–––|150|–––|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>|–––<br>|150<br>|–––<br>|||
|d(off)<br>tf<br>~~ee+++),~~|Fall Time<br>~~+++),~~|–––<br>~~+++),~~|140<br>~~+++),~~|–––<br>~~+++),~~|||
|LD<br>~~ee+++),~~|Internal Drain Inductance<br>~~+++),~~|–––<br>~~+++),~~|4.5<br>~~+++),~~|–––<br>~~+++),~~|nH<br>~~+++),~~<br>~~So~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~+++),~~<br>~~&~~<br>~~So~~|
|LS<br>~~+++),~~<br>~~ee~~<br>~~a~~|Internal Source Inductance<br>~~+++),~~<br>~~Rn~~|–––<br>~~+++),~~<br>~~Rn~~<br>~~I~~|7.5<br>~~+++),~~<br>~~Rn~~|–––<br>~~+++),~~<br>~~Rn~~|||
|Ciss<br>~~+++),~~<br>~~ee~~<br>~~a~~<br>~~a~~|Input Capacitance<br>~~+++),~~<br>~~Rn~~|–––<br>~~+++),~~<br>~~Rn~~<br>~~I~~|5600<br>~~+++),~~<br>~~Rn~~|–––<br>~~+++),~~<br>~~Rn~~|pF<br>~~+++),~~<br>~~So~~<br>~~-~~<br>~~CP~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0kHz,See Fig. 5<br>~~+++),~~<br>~~&~~<br>~~So~~<br>~~Po~~<br>~~CP~~|
|Coss<br>~~ee~~<br>~~a~~<br>~~a~~|OutputCapacitance<br>~~Rn~~|–––<br>~~Rn~~<br>~~I~~|890<br>~~Rn~~|–––<br>~~Rn~~|||
|Crss<br>~~a~~<br>~~ee~~<br>~~a~~|ReverseTransferCapacitance|–––<br>~~I~~|190|–––|||
|Coss<br>~~a~~<br>~~ee~~<br>~~a~~|Output Capacitance|–––<br>~~I~~|5800|–––||VGS=0V,VDS= 1.0Vƒ= 1.0kHz<br>~~So~~<br>~~Po~~<br>~~CP~~|
|Coss<br>~~ee~~<br>~~a~~|Output Capacitance|–––|560|–––||VGS=0V,VDS=60Vƒ= 1.0kHz<br>~~Po~~<br>~~CP~~|
|Coss eff.<br>~~a~~|Effective Output Capacitance|–––|1100|–––||VGS= 0V,VDS= 0V to 60V<br>~~CP~~|
|**Source-Drain Ratings and Characteristics**<br>~~-~~<br>~~a~~<br>~~CP~~<br>~~(TTI(RTDID(I~~|||||||
|~~ID~~<br>~~fle~~|**Parameter **<br>~~ID~~<br>~~fle~~|**Min.**<br>~~ID~~<br>~~(TTI~~<br>~~fle~~|**Typ. M**<br>~~ID~~<br>~~(RTD~~<br>~~fle~~|**. Max.**<br>~~ID~~<br>~~ID~~<br>~~fle~~|**Units**<br>~~ID~~<br>~~(I~~<br>~~fle~~|**Conditions**<br>~~ID~~<br>~~fle~~|
|IS<br>~~fle~~|Continuous Source Current<br>(Body Diode)<br>~~fle~~|–––<br>~~(TTI ~~<br>~~fle~~|––– 100<br> ~~(RTD ~~<br>~~fle~~|––– 100<br> ~~ID~~<br>~~fle~~|A<br>~~(I~~<br>~~fle~~<br>~~RD~~<br>~~(OO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~fle~~<br>~~RD~~<br>~~(OO~~|
|ISM<br>~~fle~~<br>~~ee~~<br>~~$$$~~|Pulsed Source Current<br>(Body Diode)<br>~~fle~~<br>~~RD~~<br>~~$$$~~|–––<br>~~fle~~<br>~~RD~~<br>~~ID~~|–––<br>~~fle~~<br>~~RD~~<br>~~OD~~|520<br>~~fle~~<br>~~RD~~<br>~~(OO~~|||
|VSD<br>~~fle~~<br>~~ee~~<br>~~$$$~~<br>~~es~~|Diode Forward Voltage<br>~~fle~~<br>~~RD~~<br>~~$$$~~<br>~~HH~~<br>|–––<br>~~fle~~<br>~~RD~~<br>~~ID~~<br>~~HH~~<br>|–––<br>~~fle~~<br>~~RD~~<br>~~OD~~<br>~~HH~~<br>|1.3<br>~~fle~~<br>~~RD~~<br>~~(OO~~<br>~~HH~~<br>|V<br>~~fle~~<br>~~RD~~<br>~~(OO~~<br>~~H—E~~<br>|TJ =25°C,IS=78A,VGS =0V<br>~~fle~~<br>~~RD~~<br>~~(OO~~<br>~~H—E~~|
|trr<br>~~ee~~<br>~~$$$~~<br>~~es~~|Reverse Recovery Time<br>~~RD~~<br>~~$$$~~<br>~~HH~~<br>|–––<br>~~RD~~<br>~~ID~~<br>~~HH~~<br>|110<br>~~RD~~<br>~~OD~~<br>~~HH~~<br><br>~~I~~|170<br>~~RD~~<br>~~(OO~~<br>~~HH~~<br>|ns<br>~~RD~~<br>~~(OO~~<br>~~H—E~~<br>|TJ= 25°C ,IF= 78A<br>nC   di/dt = 100A/µs<br>~~RD~~<br>~~(OO~~<br>~~H—E~~|
|Qrr<br>~~$$$~~<br>~~es~~|Reverse RecoveryCharge<br>~~$$$~~<br>~~HH~~<br>~~nD~~|–––<br>~~ID~~<br>~~HH~~<br>~~nD~~|390<br>~~OD~~<br>~~HH~~<br>~~nD~~<br>~~I~~|590<br>~~(OO~~<br>~~HH~~<br>~~nD~~|nC   di/dt = 100A/<br>~~(OO~~<br>~~H—E~~<br>~~nD~~||
|ton<br>~~$$$~~<br>~~es~~|Forward Turn-On Time<br>~~$$$~~<br>~~HH~~<br>|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~IDOD(OO~~<br>~~HH H—E~~<br><br>~~I~~|||||



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  starting  TJ = 25°C, L = 0.13mH, RG = 25, IAS = 78A, VGS =10V. (See fig. 12) 

-  ISD 78A, di/dt 320A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 400µs; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

-  Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

-  Uses IRF1407 data and test conditions. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

2 

2016-5-26 

~~Giron~~ 

IRF1407S/LPbF ~~eo—E~~ 

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1000<br>VGS<br>TOP           15V<br>                   10V<br>                    8.0V<br>                    7.0V<br>                    6.0V aan<br>                    5.5V __<br>100                     5.0V<br>BOTTOM   4.5V<br>isaula<br>“inn 4.5V<br>iil<br>10<br>20µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

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1000.00 =<br>T = 25°C<br>J<br>T = 175°C<br>y, J<br>| /<br>100.00 |<br>V = 25V<br>DS<br>20µs PULSE WIDTH<br>10.00<br>3.0 5.0 7.0 9.0 11.0 13.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>                   10V<br>                    8.0V<br>                    7.0V<br>                    6.0V fo<br>                    5.5V EL<br>100                     5.0V<br>BOTTOM   4.5V<br>pen 4.5V<br>Ve<br>t|<br>10<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 2  Typical Output Characteristics<br>3.0<br>I D = 130A<br>2.5 PEPEELLPEPE Eee<br>2.0<br>FEE E EEE<br>1.5 COESaeeOOO e eerdeeeC<br>1.0 Saee>ae>26eneeeenseen<br>EeCEEEE EEL<br>0.5 EEC<br>PEPE EE V GS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 4** Normalized On-Resistance vs. Temperature 

3 

2016-5-26 

~~Cinfin eon~~ 

IRF1407S/LPbF ~~a~~ 

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100000 15<br>VC OS GS  iss     =  = 0VCgs ,       f = 1 kHZ+  Cgd , Cds SHORTED Td ID = 78A V V DSDS = =  60V  37V T<br>C rss     = C gd  12 VDS =  15V<br>C  = C + C<br>oss   ds  gd<br>10000 i——Feee Ciss FAee 9 HEREPTPEEtT et ELTAtlyERE<br>TT of<br>1000 en Coss el 6 PA<br>3<br>Crss<br>Baliiieeiil Atte<br>100 ane VEEL<br>0<br>1 10 100 0 40 80 120 160 200<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.00 10000<br>OPERATION IN THIS AREA<br>100.00 TJ = 175J = 175= 175 ° C 1000 LIMITED BY R DS (on)<br>10.00 100<br>T = 25°C°CC 100µsec<br>J<br>1.00 10 1msec<br>Tc = 25°C<br>VGS = 0VGS = 0V= 0V Tj = 175°C 10msec<br>tp as Single Pulse<br>0.10 1<br>0.0 1.0 2.0 3.0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000.00<br>100.00 TJ = 175J = 175= 175 ° C<br>10.00<br>T = 25°C°CC<br>J<br>1.00<br>VGS = 0VGS = 0V= 0V<br>tp<br>0.10<br>0.0 1.0 2.0 3.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

4 2016-5-26 ~~=)0UCSCS;«~SFTtOTTTTOCO~~ 

2016-5-26 

IRF1407S/LPbF ~~. .».»4= == 7~~ 

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120<br>LIMITED BY PACKAGE<br>10080 pepeoN fb ff<br>60 PT Ty yp PrErEN ET<br>4020 PEtPTPi tTypePP rerErErENIN<br>Pi tT yy rere TT TN<br>0 Fi tty ete yy yy<br>25 50 tT | 75 | Tre 100 125 TT tt 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 1<br>[gs ees<br>D = 0.50<br>0.20<br>per LL  i eee<br>0.1 0.10<br>P DM<br>0.05<br>LB OT<br>t 1<br>0.02 SINGLE PULSE ct t 2 |<br>0.01 (THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + T C<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2016-5-26 

5 

~~Cinfineon~~ 

IRF1407S/LPbF ~~[I~~ 

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15V<br>650<br>L DRIVER I D<br>VDS Ne TOP 32A<br>55A<br>FA;<br>520 BOTTOM 78A<br>R G D.U.T +<br>- [V][DD]<br>IAS A<br>20V 390<br>tp 0.01<br>E y } NIA<br>PY No} ft<br> Unclamped Inductive Test Circuit  260 aN eee<br>potSA<br>V(BR)DSS<br>130<br>tp<br>. > pf |SSI<br>0 Pt | SE<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

arge **Fig 13a.** Gate Charge Waveform ——+ 

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3.5<br>NO<br>3.0<br>I<br>ID = 250µA<br>LEN \<br>2.5 UEEEEIN<br>2.0<br>EE<br>\\\<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

6 

2016-5-26 

~~Cinfineon~~ 

IRF1407S/LPbF ~~[I~~ 

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1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>100 0.01 avalanche  pulsewidth,  tav<br>assuming   Tj  = 25°C due to<br>avalanche losses<br>Seay 0.05<br>sot 0.10 A coll<br>10<br>tu SeSan<br>BEA<br>1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 iy 1.0E-03 SE 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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**----- Start of picture text -----**<br>
400<br>TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>ID = 78A<br>300 NE<br>Yl<br>200<br>INTE<br>100<br>ALENT<br>REE<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth]** 

**EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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## ~~Cinfineon~~ 

## **D2-Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D2-Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR —~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE H y Hf WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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## ~~Cinfineon~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [278 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>ASSEMBLY YEAR 7 = 1997<br>LOT CODE WEEK 19<br>LINE C<br>il<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>ASSEMBLY P = DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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**D2-Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [386 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [71 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [376 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2-Pak|MSL1<br> (per JEDEC J-STD-020D) ††|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



## **RoHS Compliant** 

- Qualification standards can be found at Infineon’s web site www.infneon.com 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|4/20/2016|<br>Updated datasheet with corporate template.<br><br>Corrected typo on Fig. 3 from VDS=15V to VDS= 25V on page 3.<br><br>Corrected typo on Fig. 5 from f = 1MHz to 1kHz on page 4.<br><br>Updated Package outline onpages 9,10.|
|5/26/2016|<br>Added disclaimer on last page.<br><br>TO-262package was removed from orderinginformation since it is EOL onpage 1.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, 

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

Edition 2016-04-19 **IMPORTANT NOTICE** ; ; ; oo , The For further information on the product, technology, **Published by** information given in this document shall in no delivery terms and conditions and prices please event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com). **81726 Munich, Germany** With respect to any examples, hints or any typical Please note that this product is not qualified values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents . ; ; **All Rights Reserved.** Technologies hereby disclaims any and all of the Automotive Electronics Council. warranties and liabilities of any kind, including Do you have a question about this without limitation warranties of non-infringement **WARNINGS document?** of intellectual property rights of any third party. Due to technical requirements products may **Email:** erratum@infineon.com contain dangerous substances. For information on In addition, any information given in this document __the types in question please contact your nearest **is subject to customer’s compliance with its** Infineon Technologies office. obligations stated in this document and any **Document reference** applicable legal requirements, norms and Except as otherwise explicitly approved by Infineon Technologies in a written document signed by **ifx1** standards concerning customer’s products and any authorized representatives of Infineon Technologies, use of the product of Infineon Technologies in **Infineon Technologies’ products may** not be used in customer’s applications. any applications where a failure of the product or any consequences of the use thereof can reasonably The data contained in this document is exclusively be expected to result in personal injury. intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the 

**Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

12 

2016-5-26 



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---

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