# Power MOSFET, N Channel, 75 V, 130 A, 7800 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657424/)

**URL**: https://novapart.co/products/IRF1407PBF/power-mosfet-n-channel-75-v-130-a-7800-ohm-to
**SKU**: IRF1407PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8090
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 130A |
| Drain Source On State Resistance | 7800µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657424/)

PD - 95485A 

## IRF1407PbF 

## **Typical Applications** 

Industrial Motor Drive 

## **Benefits** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 75V<br>R  = 0.0078 Ω<br>DS(on)<br>G<br>ID = 130A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This Stripe Planar design of HEXFET[®] Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a G **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 ~~—~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 A ~~——~~ IDM ~~oora~~ Pulsed Drain Current 520 ~~a~~ PD @TC = 25°C Power Dissipation 330 W ~~ee~~ Linear Derating Factor 2.2 W/°C ~~ee~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ EAS Single Pulse Avalanche Energy 390 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A ~~paed~~ EAR Repetitive Avalanche Energy ~~H—e—e~~ mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 4.6 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~**a**~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~oo~~ Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.45||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## IRF1407PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es<br>~~ee~~|**Max.**<br>es<br>~~ee~~|**Units**<br>es|**Conditions**<br>es|
|V(BR)DSS<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~a~~|75<br>~~ee ~~<br>~~ee~~|–––<br> ~~ee ~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>~~aee~~|–––|0.09|–––|V/°C|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~a~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~aee~~<br>~~a~~|–––|––– 0.0078|0.0078|0.0078<br>Ω|VGS= 10V, ID= 78A<br>~~®~~|
|VGS(th)<br><br>~~a~~<br>~~PR~~|Gate Threshold Voltage<br>~~ee~~<br>~~a~~<br>~~PR~~|2.0<br>|–––<br>|4.0<br>|V<br>|VDS= 10V, ID= 250µA<br>~~®~~<br>|
|gfs<br>~~a~~<br>~~PR~~|Forward Transconductance<br>~~a~~<br>~~PR~~|74<br><br>~~ee~~|–––<br><br>~~e~~|–––<br><br>~~ee~~|S<br><br>~~e~~|VDS= 25V, ID= 78A<br><br>~~e~~|
|IDSS<br>~~PR~~|Drain-to-Source Leakage Current<br>~~PRee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~e~~|20<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~e~~|VDS= 75V, VGS= 0V<br>~~ee~~<br>~~e~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~e~~|250<br>~~ee~~<br>~~ee~~||VDS= 60V, VGS= 0V, TJ= 150°C<br>~~ee~~<br>~~e~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~**|**~~<br>~~**e**e~~|–––<br>~~ee ~~<br>~~**|**~~<br>~~e~~|–––<br> ~~e~~<br>~~e~~|200<br>~~ee~~<br>~~e~~|nA<br>~~e~~<br>~~e~~|VGS= 20V<br>~~e~~<br>~~e~~|
||Gate-to-Source Reverse Leakage<br>~~**e**e~~<br>~~e~~|–––<br>~~e~~<br>~~e~~|–––<br>~~e~~<br>~~e~~|-200<br>~~e~~<br>~~e~~||VGS= -20V<br>~~e~~|
|Qg<br>~~es~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|160<br>~~ee~~|250<br>~~ee~~|nC|ID= 78A<br>VDS= 60V<br>VGS= 10V<br>~~@~~|
|Qgs<br>~~es~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|35<br>~~ee~~|52<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~Se~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~Se~~|–––<br>~~ee~~|54<br>~~ee~~|81<br>~~ee~~|||
|td(on)<br>~~Se~~|Turn-On Delay Time<br>~~Se~~<br>~~ee~~|–––<br>~~ee~~|11<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 38V<br>ID= 78A<br>RG= 2.5Ω<br>VGS= 10V<br>~~@~~<br>@|
|tr<br>a<br>es|Rise Time<br>~~ee~~<br>|–––<br>~~ee~~<br>|150<br>~~ee~~<br>|–––<br>~~ee~~|||
|td(off)<br>es|Turn-Off Delay Time<br>|–––<br>|150<br>|–––|||
|tf<br>es~~ee~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|140<br>~~ee~~|–––|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>@|
|LS<br>~~ee~~<br>~~of~~|Internal Source Inductance<br>~~ee~~<br>~~of~~|–––<br>~~ee~~|7.5<br>~~ee~~|–––|nH||
|Ciss<br>~~of~~<br>es|Input Capacitance<br>~~of~~|–––|5600|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0KHz, See Fig. 5<br>ee|
|Coss<br>~~of~~<br>es<br>ee|Output Capacitance<br>~~of~~<br>~~ee~~|–––<br>~~ee~~|890<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>es<br>ee<br>es|Reverse Transfer Capacitance<br>~~ee~~<br>es|–––<br>~~ee~~|190<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br>ee<br>es<br>ee|Output Capacitance<br>~~ee~~<br>es<br>ee|–––<br>~~ee~~<br>ee|5800<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0KHz<br>ee<br>ee|
|Coss<br>es <br>ee|Output Capacitance<br> es<br>ee|–––<br>ee|560|–––||VGS= 0V,  VDS= 60V,  ƒ = 1.0KHz<br>ee<br>ee|
|Cosseff.<br>ee|Effective Output Capacitance<br>ee|–––<br>ee|1100|–––||VGS= 0V, VDS= 0V to 60V<br>ee|
|**Source-Drain Ratings and Characteristics**<br>~~nn~~<br>~~en~~<br>~~re~~|||||||
|~~nn~~|**Parameter**<br>~~en~~|**Min.**|**Typ. **<br>~~re~~|**Max.**<br>~~re~~|**Units**<br>~~re~~|**Conditions**|
|IS<br>~~nn~~<br>~~a~~<br>ee|Continuous Source Current<br>(Body Diode)<br>~~en~~<br>~~a~~<br>|–––<br>~~a~~<br>|–––<br>~~re~~<br>~~a~~<br>|130<br>~~re~~<br>~~a~~<br>|~~re~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~®~~|
|ISM<br>~~nn~~<br>~~a~~<br>ee~~es~~<br>~~Se~~|Pulsed Source Current<br>(Body Diode)<br>~~en~~<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|–––<br>~~re~~<br>~~a~~<br>~~es~~|520<br>~~re~~<br>~~a~~<br>~~es~~|||
|VSD<br>~~a~~<br>ee~~es~~<br>~~Se~~|Diode Forward Voltage<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|1.3<br>~~a~~<br>~~es~~|V|TJ= 25°C, IS= 78A, VGS= 0V<br>~~®~~|
|trr<br>~~es~~<br>~~Se~~<br>~~es~~<br>~~Ce~~|Reverse Recovery Time<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|110<br>~~es~~<br>~~es~~|170<br>~~es~~<br>~~es~~|ns<br>~~es~~|TJ= 25°C, IF= 78A<br>di/dt = 100A/µs<br>~~®~~<br>~~°~~|
|Qrr<br>~~es~~<br>~~Se~~<br>~~es~~<br>~~Ce~~|Reverse RecoveryCharge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|390<br>~~es~~<br>~~es~~|590<br>~~es~~<br>~~es~~|nC<br>~~es~~||
|ton<br>~~es~~<br>~~Ce~~<br>~~PT~~|Forward Turn-On Time<br>~~es~~<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~es~~<br>~~°~~<br>~~PT~~|||||



Notes: ~~@~~ Repetitive rating;  pulse width limited by © Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . @ Starting TJ = 25°C, L = 0.13mH © Calculated continuous current based on maximum allowable RG = 25 Ω , IAS = 78A. (See Figure 12). @ ISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, junction temperature. Package limitation current is 75A. TJ ≤ 175°C @ Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

© Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

© Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. @ Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

www.irf.com 

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## IRF1407PbF 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>                   10V                    10V<br>                    8.0V ll AS                     8.0V e et<br>                    7.0V                     7.0V<br>                    6.0V                     6.0V<br>                    5.5V                     5.5V<br>100                 5.0V 100                 5.0V<br>BOTTOM   4.5V BOTTOM   4.5V<br>4.5V<br>ge He e SEH<br>mo”Peat4 anne 4.5V eel ReyP4 ag ee eee |<br>10 Zi 10 ol<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>AHH cH AHH cH<br>1 PLAN) Hill 1 PN Hil<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000.00<br>——— TJ = 25°C<br>T = 175°C<br>J<br>P| ge<br>ee Y 4 i ee eee eee<br>100.00<br>[es] es es ee<br>e y [/] || i |)<br>a<br>eeee eeee eeee ee ee<br>VDS = 15V<br>pp p) 20µs PULSE WIDTH<br>10.00<br>3.0 5.0 7.0 9.0 11.0 13.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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3.0<br>I D = 130A<br>2.5<br>Pt ee ty ty tt<br>T = 175°C<br>J<br>PEEEEEE EE<br>2.0<br>i ee eee eee pitttt tt et<br>1.5<br>es ee<br>i |) CECEEEEVW,ASE<br>1.0<br>ty et |<br>LA<br>0.5<br>ee ee Pirttet t  {t t tTt tt| t dT<br>DS = 15V= 15V<br>p) 20µs PULSE WIDTH GEER V T GS = 10V<br>0.0 PT TTT ttt |<br>11.0 13.0 -60 -40 -20T  , Junction TemperatureJ 0 20 40 60 80 100 120(  C)° 140 160 180<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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## IRF1407PbF 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>=e Crss    = Cgd<br>C  = C + C<br>e e oss   ds  gd ooo<br>10000<br>Ciss<br>P ee<br>es S|<br>Coss<br>1000 e S<br>a eel Crss Lt tn<br>100 ee esl<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000.00<br>100.00 T J = 175°C<br>- 10.00 E E<br>T = 25°C<br>J<br>1.00<br>VGS = 0V<br>ee<br>0.10<br>0.0 1.0 2.0 3.0<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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15<br>ID = 78A VDS =  60V<br>VDS =  37V<br>12 Pa ee ace VDS =  15V ee<br>jf<br>9<br>6 rTP TA<br>Son0 eee<br>3<br>/|<br>AEE<br>0 EE EEE<br>0 40 80 120 160 200<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>1000 LIMITED BY R DS(on)<br>100 S NE<br>100µsec<br>10 1msec<br>Tc = 25°C<br>Tj = 175°C<br>10msec<br>Single Pulse<br>1 PIE<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

www.irf.com 

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## IRF1407PbF 

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140<br>LIMITED BY PACKAGE<br>REE b o<br>120<br>PoseP| Tey EE || |<br>100 PtPT tTft ysTERN| EETT yeTt<br>80 RoE Ee<br>60 Pt ty Tre rE ETN EE<br>Pt tt tt EEN<br>40 PT tet<br>Pt tttENEttt ty yt NY<br>20 Pit| | | d || cd Pdttt Td Td | dTtTTT TNTY<br>0 Pt ttt ttt tt tt<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

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-<br>≤ 1<br>≤ 0.1 % us<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

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VDS<br>90% fi<br>\<br>10% /\ A<br>VGS |\« le >|ay,pl<<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10b.** Switching Time Waveforms 

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 1<br>po<br>a D = 0.50 a a a<br>p e<br>0.1 a 0.20 == tt |<br>0.10<br>SS SSet<br>a ae a ee ee ee eee eee<br>ee 0.05 et ee ee<br>SINGLE PULSE<br>0.020.01 (THERMAL RESPONSE) P DM<br>Saa anal allee<br>0.01<br>t 1<br>a a a ee ee Oe ee OGG OOOO t 2<br>a a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ooh 2. Peak T J = P DM x  Z thJC + T C<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>(Z        )thJC<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRF1407PbF 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>:<br>20V<br>i. tp 0.01 Ω<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>- tp<br>**----- End of picture text -----**<br>


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650<br>ID<br>NESE<br>TOP 32A<br>55A<br>Af<br>520 PNT BOTTOM 78A<br>N IN<br>390 | |<br>NSC<br>) OANA<br>260<br>PE |<br> NSA<br>130<br>SEER RNNNEEEe<br>Coo RBSSE<br>0<br>25 50 75 100 125 150 175<br>°<br>pt Starting T  , Junction TemperatureJ SS (  C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS / QGD<br>VG<br>Charge<br>=<br>**----- End of picture text -----**<br>


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Charge<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>pono<br>50K Ω<br>12V .2 µ F<br>ol .3 µ F<br>+<br>—LLin D.U.T. -VDS<br>VGS<br>3mA<br>oe |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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3.5 P N<br>3.0 P IAL LLL<br>ID = 250µA<br>YEN Hy<br>2.5 PLT TTI<br>FT tTTEN a<br>PELE<br>2.0<br>NEL<br>S RK<br>EE<br>See<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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## IRF1407PbF 

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1000<br>Duty Cycle = Single Pulse<br>Py LE EN ERET<br>aa Re | Allowed avalanche Current vs  | ||<br>100 S ims! 0.01 ll al ml avalanche  pulsewidth,  tav  il<br>assuming  ∆ Tj = 25°C due to<br>FF | PARP = TT avalanche losses HI<br>PEE 0.05 TIPS<br>m o o PSR FP a<br>0.10<br>10 RNs, SE |<br>P ESHH<br>S EE L|<br>aaa eAEEEnHAE SSSR eA<br>1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs.Pulsewidth 

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400<br>TOP          Single Pulse<br>Neal<br>BOTTOM   10% Duty Cycle<br>ID = 78A<br>BNE<br>300 L ENE<br>200<br>P ING<br>P ENNE<br>100 P EEL TEN EE<br>P PEEEEEEE ELEPNETNJ AN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16:** 

**(For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a 

temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆ T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

www.irf.com 

7 

## IRF1407PbF 

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**----- Start of picture text -----**<br>
‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>‘<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current @ Current =, =<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


## For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

8 

## IRF1407PbF 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019C<br>17 89 DATE CODE<br>Note: "P" in assembly line position ASSEMBLY YEAR 0 =  2000<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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- [Supplier page](https://es.farnell.com/infineon/irf1407pbf/mosfet-n-75v-130a-to-220/dp/8657424)
---

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