# Power MOSFET, N Channel, 55 V, 131 A, 5300 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725881/)

**URL**: https://novapart.co/products/IRF1405STRLPBF/power-mosfet-n-channel-55-v-131-a-5300-ohm-to
**SKU**: IRF1405STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2500
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:131A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 131A |
| Drain Source On State Resistance | 5300µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725881/)

## IRF1405SPbF IRF1405LPbF 

## HEXFET[®] Power MOSFET 

**Typical Applications** Industrial Motor Drive 

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D<br>VDSS = 55V<br>R  = 5.3m Ω<br>DS(on)<br>G<br>ID = 131AD = 131A = 131A<br>S<br>TO-262<br>D [2] Pak<br>IRF1405LPbF<br>IRF1405SPbF<br>**----- End of picture text -----**<br>


## **Benefits** 

- Advanced Process Technology R = 5.3m Ω DS(on) 

- Ultra Low On-Resistance G Dynamic dv/dt Rating 

- : 175°C Operating Temperature S ID = 131AD = 131A = 131A Fast Switching 

Repetitive Avalanche Allowed up to Tjmax 

## **Description** 

Stripe Planar design of HEXFET[®] Power MOSFETs utilizes the lastest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

## **Absolute Maximum Ratings** 

a **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 131 3 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 93 A ~~—ee~~ IDM Pulsed Drain Current ~~ee~~ 680 ~~il TE~~ PD @TC = 25°C Power Dissipation 200 W ~~TE~~ Linear Derating Factor 1.3 W/°C ~~TE~~ VGS Gate-to-Source Voltage ± 20 V ~~LET~~ EAS Single Pulse Avalanche Energy 590 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A ~~ph~~ EAR Repetitive Avalanche Ener ~~ee~~ gy ~~A ee~~ mJ ~~TE~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~TT~~ Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) ~~ES~~ **Thermal Resistance Parameter Typ. Max. Units** es I (I R θ JC Junction-to-Case ––– 0.75 °C/W R θ JA Junction-to-Ambient (PCB  mount) ––– 40 ~~Et~~ www.irf.com 1 

## **Thermal Resistance** 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>en|**Min.**<br>en<br>~~es~~|**Typ. **<br>en|**Max.**<br>en|**Units**<br>en|**Conditions**<br>en|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|55<br>~~es~~<br>~~es~~<br>~~se~~|–––<br>~~es~~<br>~~se~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ns~~|–––<br>~~ns~~<br>~~se~~|0.057 <br>~~ns~~<br>~~se~~|–––<br>~~ns~~|V/°C<br>~~ns~~|Reference to 25°C, ID= 1mA<br>~~ns~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ss~~|–––<br>~~se~~<br>~~ss~~|4.6<br>~~se~~|5.3|mΩ|VGS= 10V, ID= 101A<br>®|
|VGS(th)|Gate Threshold Voltage<br>~~ss~~|2.0<br>~~ss~~|–––<br>~~ss~~|4.0<br>~~ss~~|V<br>~~ss~~|VDS= 10V, ID= 250µA<br>~~ss~~|
|gfs|Forward Transconductance|69|–––|–––|S|VDS= 25V, ID= 110A|
|IDSS<br>~~———~~|Drain-to-Source Leakage Current<br>~~———~~|–––|–––|20|µA|VDS= 55V, VGS= 0V|
|||–––|–––|250||VDS= 44V, VGS= 0V, TJ= 150°C|
|IGSS<br>~~———~~|Gate-to-Source Forward Leakage<br>~~———~~|–––|–––|200|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~———~~|–––|–––|-200||VGS= -20V|
|Qg<br>~~———~~<br>~~a~~|Total Gate Charge<br>~~———~~<br>~~ee~~|–––|170|260|nC|ID= 101A<br>VDS= 44V<br>VGS= 10V<br>~~®~~|
|Qgs<br>~~a~~|Gate-to-Source Charge<br>~~ee~~|–––|44|66|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|62|93|||
|td(on)<br>~~a ~~<br>es|Turn-On Delay Time<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|13<br>~~es~~|–––<br>~~es~~|ns|VDD= 38V<br>ID= 110A<br>RG= 1.1Ω<br>VGS= 10V<br>~~®~~<br>~~ey~~|
|tr<br>es|Rise Time<br>~~es~~|–––<br>~~es~~|190<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>es<br>~~ee~~|Turn-Off Delay Time<br>~~es~~<br>~~a~~|–––<br>~~es~~<br>~~a~~|130<br>~~es~~|–––<br>~~es~~|||
|tf<br>~~ee~~<br>~~ee~~|Fall Time<br>~~a~~<br>~~ee~~|–––<br>~~a~~|110|–––|||
|LD<br>~~ee~~<br>~~ee~~|Internal Drain Inductance<br>~~a~~<br>~~ee~~|–––<br>~~a~~|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~ey~~|
|LS<br>~~ee~~<br>~~ee~~<br>~~es~~|Internal Source Inductance<br>~~a~~<br>~~ee~~<br>~~es~~|–––<br>~~a~~<br>GO|7.5|–––|nH||
|Ciss<br>~~ee~~<br>~~es~~<br>ee~~ee~~|Input Capacitance<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>GO|5480|–––|pF<br>7|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~ey~~<br>Ps|
|Coss<br>~~ee~~<br>~~es~~<br>ee~~ee~~|Output Capacitance<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>GO|1210|–––|||
|Crss<br>~~es~~<br>ee~~ee~~<br>es|Reverse Transfer Capacitance<br>~~es~~<br>~~ee~~|–––<br>GO|280|–––|||
|Coss<br>~~es~~<br>ee~~ee~~<br>es<br>ee|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>GO|5210|–––||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>Ps<br>PO|
|Coss<br>ee~~ee~~<br>es<br>ee|Output Capacitance<br>~~ee~~|–––|900|–––||VGS= 0V,  VDS= 44V,  ƒ = 1.0MHz<br>Ps<br>PO|
|Cosseff.<br>ee~~ee~~<br>ee|Effective Output Capacitance<br>~~ee~~|–––|1500|–––||VGS= 0V, VDS= 0V to 44V<br>PO|
|**Source-Drain Ratings and Characteristics**<br>ee~~ee~~<br>7<br>~~ne~~<br>~~ee~~<br>~~re~~|||||||
|~~ne~~|**Parameter**<br>~~ee~~|**Min. **|**Typ. **<br>~~re~~|**Max.**<br>~~re~~|**Units**<br>~~re~~|**Conditions**|
|IS<br>~~ne~~<br>~~ae~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~ae~~|–––<br>~~ae~~|–––<br>~~re~~<br>~~ae~~|131<br>~~re~~|~~re~~<br>~~ft~~<br>|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>a<br>~~®~~|
|ISM<br>~~ne~~<br>~~ae~~<br>~~Pe~~<br>~~Ss~~|Pulsed Source Current<br>(Body Diode)<br>~~ee~~<br>~~ae~~<br>~~Pe~~<br>|–––<br>~~ae~~<br>~~jf~~<br>|–––<br>~~re~~<br>~~ae~~<br>~~jf~~<br>|680<br>~~re~~<br>~~ft~~<br>|||
|VSD<br>~~Pe~~<br>~~Ss~~|Diode Forward Voltage<br>~~Pe~~<br>|–––<br>~~jf~~<br>|–––<br>~~jf~~<br>|1.3<br>~~ft~~<br>|V<br>~~ft~~<br>|TJ= 25°C, IS= 101A, VGS= 0V<br>~~®~~|
|trr<br>~~Pe~~<br>~~Ss~~|Reverse Recovery Time<br>~~Pe~~<br>|–––<br>~~jf~~<br>|88<br>~~jf~~<br>|130<br>~~ft~~<br>|ns<br>~~ft~~<br>|TJ= 25°C, IF= 101A<br>di/dt = 100A/µs<br>~~®~~|
|Qrr<br>~~Pe~~<br>~~Ssoer~~|Reverse RecoveryCharge<br>~~Pe~~<br>~~oer~~|–––<br>~~jf~~<br>~~oer~~|250<br>~~jf ~~<br>~~oer~~|380<br> ~~ft~~<br>~~oer~~|nC<br>~~ft~~<br>~~oer~~||
|ton<br>~~oer~~|Forward Turn-On Time<br>~~oer~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~oer~~|||||



## **Source-Drain Ratings and Characteristics** 

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 Parameter Min. Typ. Max. Units Conditions<br>IS Continuous Source Current ––– ––– 131 MOSFET symbol D<br>ne (Body Diode) ee re showing  the<br>ISM Pulsed Source Current ––– ––– 680 integral reverse G<br>ae (Body Diode)  p-n junction diode. a S<br>VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V<br>trr Reverse Recovery Time ––– 88 130 ns TJ = 25°C, IF = 101A<br>SsPejf ft ®<br>Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs<br>oer ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>**----- End of picture text -----**<br>


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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V it AA 6.0V HHL Ltt<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V Ye BOTTOM 4.5V HY<br> 100 f SSS" ASS Sesse|eee| i_gZAkY Vilcoe Aol<br> 100<br>A Mh a eeA ——EZ pe<br>Y \Y4 ney ee EU TTIi<br> 10<br>PEE EE YY +—<br>4.5V 4.5V<br>a |Beno<br> 1 SBal i n 20µs PULSE WIDTHT  = 25J ” °C  10 MW24 20µs PULSE WIDTHT  = 175J °C lil<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.0<br>SS T  = 25  CJ ° SSE TUTTE ID = 169A<br>°<br>a e T  = 175  CJ 2.5 TTT TTT 7<br>a aa P TT<br> 100 BP a 2.0 Pt} ttt tT tT tt ty<br>a46 Be e e eeeeeeeneera<br>> 2) ee ee ee ee ee 1.5 FCC eetra<br>ey a TT | | [| PYE<br> 10 Pf 1.0 TTT<br>————————| | | tt 7eet<br>ee TTP<br>Ee ee ee ee ee ee 0.5<br>ne V      = 25VDS PFT te EEE E_E_L_LELEL<br>20µs PULSE WIDTH VGS = 10V<br> 1 | | | | | 0.0 FLEET LI TT<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000 VGS   = 0V,       f = 1 MHZ 20 ID = 101A<br>CCrss  iss    = C  = Cgd gs + Cgd,   Cds    SHORTED 16 VVDSDS == 44V 27V<br>=a Coss   = Cds + Cgd | | {| | St<br>10000<br>SS Ciss 12 J<br>PT Pt [TTT] TAL<br>Coss<br>8<br>1000<br>rl COO<br>Crss<br>ee 4 TAT TT<br>FOR TEST CIRCUIT<br>100 EET Fri) = 0 PARR SEE FIGURE       13<br>1 10 100 0 60 120 180 240 300<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>T  = 175  CJ ° 4 Wa<br> 1000<br> 100<br>10us<br>===22=—_====ESR SEES  100 PT a TSESL S  TSRCSL S 100us |<br>T  = 25  CJ °<br>1ms<br> 10 i | | | | | es e<br>== = ======—==  10 e e 10ms<br> T TCJ = 25  C= 175  C° °<br>FOREEEE RE V      = 0 V GS E L  Single Pulse S E<br> 1  1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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160<br>LIMITED BY PACKAGE<br>BRR Reeeeenee vos 7h<br>AE EEE Ye (dour<br>120 ~ Re<br>-<br>PP EE [ETT] 7 vo<br>80 eeBeane ~ Seeeeeee 1Pulse10v Width ≤ 1  Hs<br>≤ 0.1 %<br>PTET ETN ie<br>Fig 10a.   Switching Time Test Circuit<br>Pet EN<br>40<br>VDS<br>COTTE 90% —<br>0<br>25 50 75 100 125 150 175<br>Pi EET T   , Case TemperatureC TT T TE (  C)° X \/<br>10% /\_\<br>Fig 9.   Maximum Drain Current Vs. VGS LT<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 1<br>e D = 0.50 e eT |<br>a 0.20 es een ail<br>0.1 0.10<br>m r| || |<br>e e<br>e 0.05 rr<br>ee ee on ee<br>0.02<br>0.01<br>SINGLE PULSE PDM<br>SS (THERMAL RESPONSE) O<br>0.01<br>t1<br>t2<br>a a ee ee<br>a | Notes:<br>1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJC + TC<br>0.001 lll<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>TL<br>20V<br>boa tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>**----- End of picture text -----**<br>


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1400<br>ID<br>P| | | | | dt<br>NEP TOP 41A<br>1200 71A<br>IN | | | | BOTTOM 101A<br>1000 PNTPIN | TTtT TTT tT tt<br>800<br>EeNEReeeeee<br>600 NERBNE EEE<br>NaN NESE Eee<br>400 TPP|INNNAT ATXK Tf<br>200 Po ty PAN A<br>PP et TT PSS KY<br>0<br>25 50 75 100 125 150 175<br>ae.“ Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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T e QG<br>+ QGS te QGD a<br>VG<br>Charge<br> Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>ae<br>50K Ω<br>12V .2 µ F<br>|fi me .3 µ F !<br>+<br>Lit D.U.T. -VDSVDSDS<br>VGS<br>(x<br>3mA<br>Onl. IG ID |<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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4.0<br>B NE<br>3.5 P EIN EEE ET<br>PTT ESE EEL<br>3.0 ID = 250µA<br>E PA<br>2.5 Pa eeeaNEPEEE<br>2.0 SP taeeeeeNeTt ET TN<br>+<br>-VDSVDSDS Pt tT ET<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>T yTN<br>TJ , Temperature ( °C )<br>| PET  tT} T T<br>VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>a 00 Duty Cycle = Single Pulse | | |<br>100 r enee ee | Allowed avalanche Current vs  |<br>0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>pe} ttt tii} |_| | | 0.05 | a tt} avalanche losses AGE<br>10 SC uiiioeiittes;:ESS| ail =e<br>0.10<br>a | | |<br>1 a ee ll<br>r—+-FFILET ETE<br>a aa | |<br>0.1<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>600<br>W H TOP          Single Pulse                (For further info, see AN-1005 at www.irf.com)<br>1. Avalanche failures assumption:<br>500 N U CEEN BOTTOM   10% Duty CycleID = 101A     temperature far in excess of T  Purely a thermal phenomenon and failure occurs at ajmax. This is validated for<br>    every part type.<br>400 N EN EEC LLL 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>PANCELE LLL<br>3. Equation below based on circuit and waveforms shown in<br>300 B ENNER   Figures 12a, 12b.<br>Py | KK EE EE EL 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>200 p tt NAHE 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>C OCOONS     voltage increase during avalanche).<br>100 Se eeee eeNaeeeNEE 6. I7.     T ∆ av Tjmax  = = Allowable avalanche current.Allowable rise in junction temperature, not to exceed(assumed as 25°C in Figure 15, 16).<br>0 ff ft | tt tt SAL   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>00<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL i<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TER 002.<br>8024 DATE CODE<br>ASSEMBLY YEAR 0 =  2000<br>assembly“Lead line- Free”position LOT CODE H Y Ue UYU WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER F530S<br>LOGO TOR80 Po02A24 P =  DESIGNATES LEAD - FREEDATE CODEPRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE u van y t YEAR 0 =  2000<br>UJ UJ WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO | IQRIRL3103L719C<br>17 89 DATE CODE<br>Note: "P"indicatesin assembly“Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL _————<br>RECTIFIER IRL3103L<br>LOGO TOR1789P7194. DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

## www.irf.com 

10 

Dimensions are shown in millimeters (inches) 

**==> picture [283 x 274] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) ee 11.40 (.449) 15.42 (.609)15.22 (.601) - 24.30 (.957)23.90 (.941) 4<br>TRL<br>ie<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>? 12.80 (.504) 23.90 (.941)<br>— [4]<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB. 26.40 (1.039)24.40 (.961) Ic 4<br>Q 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Notes: @ Repetitive rating;  pulse width limited by © Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). 

© Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

@ Starting TJ = 25°C, L = 0.11mH © RG = 25 Ω , IAS = 101A. (See Figure 12). 6) ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C @ 

© Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. @ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

11 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1405STRLPBF/power-mosfet-n-channel-55-v-131-a-5300-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irf1405strlpbf/mosfet-n-ch-55v-131a-to-263ab/dp/2725881)
---

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