# Power MOSFET, N Channel, 55 V, 169 A, 5300 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648026/)

**URL**: https://novapart.co/products/IRF1405PBF/power-mosfet-n-channel-55-v-169-a-5300-ohm-to
**SKU**: IRF1405PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0900
**Stock**: 100+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:169A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 169A |
| Drain Source On State Resistance | 5300µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648026/)

## IRF1405PbF 

## **Typical Applications** 

## HEXFET[®] Power MOSFET 

Industrial motor drive 

## **Benefits** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 5.3mΩ<br>DS(on)<br>G<br>ID = 169A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This Stripe Planar design of HEXFET[®] Power MOSFETs utilizes the latest processing techniques to achieve extremely low  on-resistance per silicon area.  Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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D<br>S<br>D<br>G<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratingsgss**|||
|---|---|---|---|
||**Parameter**<br>~~————~~|**Max.**<br>~~————~~|**Units**|
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V<br>~~————~~|169<br>~~————~~|A<br>~~a~~|
|ID@ TC= 100°C|Continuous Drain Current,VGS@ 10V<br>~~————~~<br>~~oo~~|118<br>~~————~~<br>~~oo~~||
|IDM|Pulsed DrainCurrent<br>~~————~~<br>~~a~~|680<br>~~————~~<br>~~a~~||
|PD@TC= 25°C<br>~~>~~|Power Dissipation<br>~~————~~<br>~~a~~<br>~~>~~|330<br>~~————~~<br>~~a~~<br>|W<br>~~a~~<br>|
|~~>~~|Linear DeratingFactor<br>~~a~~<br>~~>~~|2.2<br>~~a~~<br>|W/°C<br>~~a~~<br>|
|VGS<br>~~>~~|Gate-to-Source Voltage<br>~~>a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>|Single Pulse Avalanche Energy<br>~~a~~<br>~~a~~|560<br>~~a~~<br>~~a~~|mJ<br>~~a~~<br>~~a~~|
|IAR|Avalanche Current<br>~~a~~<br>~~a~~<br>~~Hs~~|See Fig.12a, 12b, 15, 16<br>~~a~~<br>~~a~~<br>~~Hs~~|A<br>~~a~~<br>~~a~~<br>~~Hs~~|
|EAR|Repetitive Avalanche Energy<br>~~Hs~~||mJ<br>~~Hs~~|
|dv/dt<br>~~po~~|Peak Diode recoverydv/dt<br>~~or~~<br>~~po~~|5.0<br>~~or~~|V/ns<br>~~or~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175|°C|
|~~po~~|SolderingTemperature,for 10seconds<br>~~po~~|300(1.6mm from case)||
|~~po~~|MountingTorque,6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in(1.1N m)<br>~~a~~|~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|55<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO ~~<br>~~GO~~|V<br> ~~GO~~<br>~~CO~~|VGS= 0V, ID= 250µA<br>~~GO~~<br>~~CO~~|
|∆V(BR)DSS/∆TJ|JBreakdown Voltage Temp.Coefficient<br>~~GD~~|–––<br>~~GD~~<br>~~QD~~|0.057<br>~~GD~~<br>~~QD~~|–––<br>~~GD~~<br>~~GO~~<br>~~GO~~|V/°C<br>~~GD~~<br>~~CO~~<br>~~(OC~~|Reference to 25°C,ID= 1mA<br>~~GD~~<br>~~CO~~<br>~~(OC~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~GD~~<br>~~es~~|–––<br>~~GD~~<br>~~es~~<br>~~QD~~<br>~~I~~|4.6<br>~~GD~~<br>~~es~~<br>~~QD~~<br>~~GOD~~|5.3<br>~~GD~~<br>~~GO ~~<br>~~es~~<br>~~GO~~<br>~~GO~~|mΩ<br>~~GD~~<br> ~~CO~~<br>~~es~~<br>~~(OC~~<br>~~GO~~|VGS= 10V, ID= 101A<br>~~GD~~<br>~~CO~~<br>~~es~~<br>~~(OC~~<br>~~GO~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~RD~~|2.0<br>~~es~~<br>~~QD~~<br>~~RD~~<br>~~I~~<br>~~GD~~|–––<br>~~es~~<br>~~QD ~~<br>~~RD~~<br>~~GOD~~<br>~~GD~~|4.0<br>~~es~~<br> ~~GO~~<br>~~RD~~<br>~~GO~~<br>~~OO~~|V<br>~~es~~<br>~~(OC~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|VDS= VGS,ID= 250µA<br>~~es~~<br>~~(OC~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|
|gfs|Forward Transconductance<br>~~RD~~|69<br>~~I ~~<br>~~RD~~<br>~~GD~~<br>~~ee~~|–––<br> ~~GOD ~~<br>~~RD~~<br>~~GD~~<br>~~ee~~|–––<br> ~~GO ~~<br>~~RD~~<br>~~OO~~<br>~~ee~~|S<br> ~~GO~~<br>~~RD~~<br>~~GO~~<br>~~ee~~|VDS= 25V, ID= 101A<br>~~GO~~<br>~~RD~~<br>~~GO~~<br>~~eee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~GD~~<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~GD ~~<br>~~ee~~<br>~~ee~~<br>~~**|**~~|20<br> ~~OO ~~<br>~~ee~~<br>~~ee~~|µA<br> ~~GO~~<br>~~ee~~<br>~~ee~~|VDS= 55V,VGS= 0V<br>~~GO~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|250<br>~~ee~~<br>~~ee~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~ee~~<br>~~eee~~|
|IGSS<br>~~a~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~<br>~~a~~|–––<br>~~ee~~<br>~~ee ~~<br>~~**|**~~<br>~~a~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~**|**~~<br>~~a~~<br>~~ee~~|200<br>~~ee~~<br> ~~ee~~<br>~~a~~|nA<br>~~ee~~<br>~~ee ~~<br>~~a~~|VGS= 20V<br>~~ee~~<br> ~~eee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~ae~~|–––<br>~~a~~<br>~~ae~~<br>~~ee~~|-200<br>~~a~~<br>~~ae~~||VGS= -20V<br>~~a~~|
|Qg<br>~~a~~|TotalGateCharge<br>~~a~~|–––|170<br>~~ee~~|260|nC|ID= 101A<br>VDS= 44V<br>VGS= 10V<br>~~@~~|
|Qgs<br>~~a~~|Gate-to-Source Charge<br>~~aes~~|–––|44<br>~~ee~~|66|||
|Qgd<br><br>~~a~~|Gate-to-Drain("Miller") Charge<br>~~es~~<br>~~a~~|–––<br>|62<br>|93<br>|||
|td(on)<br><br>~~a~~|Turn-On DelayTime<br>~~es~~<br>~~a~~|–––<br>|13<br>|–––<br>|ns<br>~~|~~|VGS= 10V<br>VDD= 38V<br>ID= 101A<br>RG= 1.1Ω<br>~~@~~<br>~~|~~|
|tr<br>~~a~~<br>~~a~~|Rise Time<br>~~aee~~<br>~~a~~|–––<br>~~ee~~<br>|190<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>~~a~~|–––<br>|130<br>|–––<br>|||
|tf<br>~~a~~|Fall Time<br>~~a|~~|–––<br>~~|~~|110<br>~~|~~|–––<br>~~|~~|||
|LD<br>|Internal Drain Inductance<br>~~|~~|–––<br>~~|~~|4.5<br>~~|~~|–––<br>~~|~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~|~~|
|LS<br><br>~~a~~|Internal Source Inductance<br>~~|~~<br>~~a~~|–––<br>~~|~~<br>|7.5<br>~~|~~<br>|–––<br>~~|~~<br>|||
|Ciss<br>~~a~~|Input Capacitance<br>~~a~~|–––<br>|5480<br>|–––<br>|pF<br>~~a~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig.5|
|Coss<br>~~a~~<br>~~a~~|OutputCapacitance<br>~~aa~~<br>~~a~~|–––<br>~~a~~<br>|1210<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Crss<br>~~aa~~|Reverse Transfer Capacitance<br>~~aa~~|–––<br>~~a~~|280<br>~~a~~|–––<br>~~a~~|||
|Coss<br>~~aa~~|OutputCapacitance<br>~~aa~~|–––<br>~~a~~|5210<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|–––<br>~~a~~|900<br>~~a~~|–––<br>~~a~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz|
|Cosseff.|EffectiveOutputCapacitance<br>~~a~~|–––<br>~~a~~|1500<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS= 0V to 44V|



Notes: ~~©©~~ Repetitive rating;  pulse width limited by Cossoss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). 

Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

° Starting TJ = 25°C, L = 0.11mH © RG = 25Ω, IAS = 101A. (See Figure 12). fo) ISD ≤ 101A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C @ 

Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

@ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V it AA 6.0V HLA<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V ) 2a BOTTOM 4.5V ONAe<br> 100 f eUM MiYerTh<br> 100<br>>/ f/f gita0 ee ee —— T_T<br>Y \Y4 ney Ht<br> 10<br>SSS SS tt Hn<br>4.5V 4.5V<br>Ee |M e t<br> 1 iiiBaia 20µs PULSE WIDTHT  = 25J °C  10 MW 24 oo 20µs PULSE WIDTHT  = 175J °C Lill<br>0.1  1  10  100 0.1  1  10  100<br>a”<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 3.0<br>;a T  = 25  CJ ° oe P ID = 169A EEEE E E TE<br>= = — T  = 175  CJ ° 2.5<br>a ae Pt TT eT TET TT<br>a Pt} ttt tT tT tt ty<br> 100 2.0<br>7 ete<br>——————————— FCC eet<br>| fy [| | f{ | 7~  J[ | 1.5 ra<br>ey a Ty TTELT<br> 10 Pf————| | | 1.0 PPP| | tertter| | ttytttTT<br>a ee 0.5<br>ne V      = 25VDS ee ee ee PTT EET ET eT To<br>20µs PULSE WIDTH VGS = 10V<br> 1 | | ft | 0.0 FTTFTITITiTtTy<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>Coss   = Cds + Cgd<br>10000 Po e e<br>Ciss<br>Coss<br>1000 C TT, SETH<br>ST S<br>rE Crss SET<br>ae ee<br>100 |<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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 1000<br>T  = 175  CJ °<br>|_| Tae<br> 100<br>S==22=====——<br>T  = 25  CJ °<br> 10 == 55========<br>: |<br> 1 PEE EE V      = 0 V GS<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 101A<br>VDS = 44V<br>VDS = 27V<br>16 ees PT Sn<br>12<br>> y,<br>CO<br>8 | | | | Wit ft dd<br>lame<br>4 | YT tT} | |tt<br>FOR TEST CIRCUIT<br>SEE FIGURE       13<br>0 Viti tl<br>0 60 120 180 240 300<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br>10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>pal<br>1000<br>Ee Pee tPT<br>100<br>100µsec<br>10 P CUTECSst E 1msec TEI<br>Tc = 25°C<br>Tj = 175°C Kt ttt 10msec<br>sai Single Pulse sees<br>1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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200 Rp<br>LIMITED BY PACKAGE<br>160 RA! =[| | | | Vv<br>in gs D.U.T.<br>-<br>120 PLP|ttTTyettetAEq x tt~ EEEPad tttipdtd Reyt tov | ≤ 1  Yoo<br>≤ 0.1 %<br>80 PteeLT AL EL INEL PulsebuyeacorWidth -<br>Fig 10a.   Switching Time Test Circuit<br>40 PL TE TE EEL [LING]<br>VDS<br>PELE 90% —<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>FL ELLE LLL] | | 10% \ OV<br>Fig 9.   Maximum Drain Current Vs. VGS f\« le >|\ pl< ><br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 1 Pp===.ti“—‘is‘srSC“(‘S(WSCSTCSCUT Ch UT hE hdrTr———--. =... aneTT<br>eeea ee —_—____._<br>c D = 0.50 aee eee<br>0.1 ee 0.20 ee ee ee ee<br>a 0.10 a<br>e 0.05 e ee<br>=r<br>0.02 = SINGLE PULSE MR eee eee<br>0.01 (THERMAL RESPONSE) PDM<br>0.01 eeeTl i PTE| ETI<br>popCee aa tC—“—tCi—s~srSC“‘CSCSTTCOUTST CT TT ee ee eeTTaeee Notes: t1 t2<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>TL<br>fae 20V<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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— tp V(BR)DSS<br>‘)<br>/<br>IAS a n<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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— QG<br>i QGS y7 QGD<br>VG<br>**----- End of picture text -----**<br>


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Charge<br>Fig 13a.   Basic Gate Charge Waveform _<br>Current Regulator<br>a! Same Type as D.U.T. |<br>50KΩ<br>12V .2µF<br>.3µF<br>is<br>+<br>D.U.T. -VDS<br>VGS<br>_&<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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1200<br>ID<br>P| [| tt<br>TOP 41A<br>1000 71A<br>BOTTOM 101A<br>KPN EEE EE  Ld<br>E NE<br>800<br>600 NETRILLEX ELEEE<br>Ed<br>NINN<br>I NNIN<br>400 TSS NCOFE EE<br>200 PiORAL<br>0 Fi fi tit | aS<br>25 50 75 100 125 150 175<br>See SSNs °<br>Starting T  , Junction TemperatureJ (  C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.0 T RILLLLLLI<br>FENEEEELEE<br>3.5 P EEhs PS<br>3.0 ID = 250µA<br>S EES Io<br>2.5 P EPPAKEE<br>T ELE<br>2.0<br>XT<br>PEELE)<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>H H T<br>TJ , Temperature ( °C )<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>VGS(th) ,  Variace ( V )<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Pt | a a a ee<br>Duty Cycle = Single Pulse<br>||| een eee I Allowed avalanche Current vs<br>100 0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>TTT TT) 0.05 SSS<br>UE |e 0.10 a ees ee<br>10 yt<br>FE FA I EET PPB TIE<br>Pt TT T S<br>e T<br>a<br>1 a<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current Vs.Pulsewidth 

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600 G i TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>500 N eg<br>A W ID = 101A<br>400 Ea NGN<br>300 B ERANE<br>S S EEeeNS eee<br>200<br>P t TT N IN E ES E<br>100 E Pt} tt]EREttt EN ET<br>0 PPE EE [PAK]<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>Fig 16.   Maximum Avalanche Energy<br>Vs. Temperature<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 15, 16). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

8 

TO-220AB packages are not recommended for Surface Mount Application. 

**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/2010 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1405PBF/power-mosfet-n-channel-55-v-169-a-5300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf1405pbf/mosfet-n-55v-133a-to-220/dp/8648026)
---

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