# Power MOSFET, N Channel, 40 V, 190 A, 3700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657394/)

**URL**: https://novapart.co/products/IRF1404ZPBF/power-mosfet-n-channel-40-v-190-a-3700-ohm-to
**SKU**: IRF1404ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5930
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 220W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 190A |
| Drain Source On State Resistance | 3700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657394/)

PD - 96040C 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 

175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of  applications. 

## IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF 

## HEXFET[®] Power MOSFET 

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D ee V(BR)DSS 40V<br>RDS(on)   typ. 2.7m Ω<br>              max. 3.7m Ω<br>——I<br>G<br>fe ID (Silicon Limited) 180A<br>S a ID (Package Limited) 120A<br>**----- End of picture text -----**<br>


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TO-220AB D [2] Pak TO-262<br>IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~ee~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~Gn~~|**Max.**<br>~~Gn~~|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~ee~~|Continuous Drain Current,VGS@ 10V(S ilicon Limited)<br>~~Gn~~|180<br>~~Gn~~|A|
|ID@ TC= 100°C<br>~~ee~~<br>~~a ~~|Continuous Drain Current,VGS@ 10V<br>~~Gn~~<br> ~~nS~~|120<br>~~Gn~~<br>~~nS~~||
|ID@ TC= 25°C<br>~~ee~~<br>~~ee~~|Continuous Drain Current,VGS@ 10V(P ackage Limited)<br>~~ee~~<br>~~nC~~|120<br>~~nC~~||
|IDM<br>~~ee~~<br>~~ee~~|Pulsed Drain Current<br>~~nC~~|710<br>~~nC~~||
|PD@TC= 25°C<br>~~ee~~<br>~~ee~~|Power Dissipation<br>~~nC~~|200<br>~~nC~~|W|
|~~ee~~<br>~~GO~~<br>~~ee~~|Linear Derating Factor<br>~~GO~~<br>~~GO~~|1.3<br>~~GO~~<br>~~GO~~|W/°C<br>~~GO~~<br>~~GO~~|
|VGS<br>~~ee~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~GO~~|± 20<br>~~GO~~|V<br>~~GO~~|
|EAS(Thermallylimited)<br>~~ee~~<br>~~SST~~<br>~~ee~~|Single Pulse Avalanche Energy<br>~~GO~~<br>~~SST~~<br>~~©~~|330<br>~~GO~~<br>~~SST~~|mJ<br>~~GO~~<br>~~SST~~|
|EAS(Tested)<br>~~SST~~<br>~~ee~~|Single Pulse Avalanche Energy Tested Value<br>~~SST~~<br>~~©~~|480<br>~~SST~~||
|IAR<br>~~SST~~<br>~~ee~~<br>~~sO~~|Avalanche Current<br>~~SST~~<br>~~©~~<br>~~sO~~|See Fig.12a, 12b, 15, 16<br>~~SST~~<br>~~sO~~<br>~~eee~~|A<br>~~SST~~<br>~~sO~~|
|EAR<br>~~sO~~<br>~~a~~<br>~~ee~~|Repetitive Avalanche Energy<br>~~sO~~<br>~~en~~<br>~~ee~~||mJ<br>~~sO~~|
|TJ<br>TSTG<br>~~a~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~en~~<br>~~ee~~|-55  to + 175<br>~~eee~~|°C|
|~~a~~<br>~~ee~~<br>~~es~~|Soldering Temperature, for 10 seconds<br>~~en~~<br>~~ee~~<br>~~nn”Senn~~|300 (1.6mm from case )<br>~~eee~~<br>~~RI~~<br>~~SO~~||
|~~ee~~<br>~~es~~|Soldering Temperature, for 10 seconds<br>Mounting Torque, 6-32 or M3 screw<br>~~ee ~~<br>~~nn”Senn~~|300 (1.6mm from case )<br>10 lbf in (1.1N m)<br> ~~eee~~<br>~~RI~~<br>~~SO~~||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~Re~~|**Parameter**<br>~~NG~~|**Min.**<br>~~NG~~|**Typ.**<br>~~GD OD~~|**Max. **<br>~~OD~~|**Units**<br>~~GO GO~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Re~~<br>~~es~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~NG~~<br>~~en~~<br>|40<br>~~NG~~<br>~~en~~<br>~~GO~~<br>|–––<br>~~GD OD~~<br>~~en~~<br>~~OD~~<br>|–––<br>~~OD~~<br>~~en~~<br>~~ID~~<br>|V<br>~~GO GO~~<br>~~en~~<br>~~OD~~<br>|VGS= 0V,ID= 250μA<br>~~GO~~<br>~~en~~<br>|
|ΔV(BR)DSS/ΔTJ<br>~~Re~~<br>~~es~~<br>~~ee~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~NG~~<br>~~en~~<br><br>|–––<br>~~NG ~~<br>~~en~~<br>~~GO~~<br><br>|0.033<br> ~~GD OD~~<br>~~en~~<br>~~OD~~<br><br>|–––<br>~~OD ~~<br>~~en~~<br>~~ID~~<br><br>~~GS~~<br>|V/°C<br> ~~GO GO~~<br>~~en~~<br>~~OD~~<br><br>~~GOGO~~<br>|Reference to 25°C,ID= 1mA<br>~~GO~~<br>~~en~~<br><br>~~GOGO~~<br>|
|RDS(on)<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~en~~<br>~~GG~~<br><br>|–––<br>~~en~~<br>~~GO~~<br>~~GG~~<br><br>~~GD EN~~<br>|2.7<br>~~en~~<br>~~OD~~<br>~~GG~~<br><br>~~EN~~<br>|3.7<br>~~en~~<br>~~ID~~<br>~~GG~~<br>~~GS~~<br><br>~~EN~~<br>|mΩ<br>~~en~~<br>~~OD~~<br>~~GG~~<br>~~GOGO~~<br><br>~~GO~~<br>|VGS= 10V,ID= 75A<br>**<br>~~en~~<br>~~GG~~<br>~~GOGO~~<br><br>|
|VGS(th)<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~a~~|Gate Threshold Voltage<br>~~GG~~<br>~~nD~~<br><br>|2.0<br>~~GO ~~<br>~~GG~~<br>~~nD~~<br>~~GD EN~~<br><br>~~GD~~|–––<br> ~~OD ~~<br>~~GG~~<br>~~nD~~<br>~~EN~~<br><br>~~I~~|4.0<br> ~~ID~~<br>~~GG~~<br>~~GS~~<br>~~nD~~<br>~~EN~~<br><br>~~QO~~|V<br>~~OD~~<br>~~GG~~<br>~~GOGO~~<br>~~nD~~<br>~~GO~~<br><br>~~QO~~|VDS= VGS,ID= 150μA<br>~~GG~~<br>~~GOGO~~<br>~~nD~~<br>|
|gfs<br>~~es~~<br>~~es~~<br>~~a~~|Forward Transconductance<br><br>~~RD~~<br>~~a~~|170<br><br>~~GD EN~~<br>~~RD~~<br>~~GD~~|–––<br><br>~~EN~~<br>~~RD~~<br>~~I~~<br>~~eee~~|–––<br>~~GS~~<br><br>~~EN~~<br>~~RD~~<br>~~QO~~<br>~~eee~~|V<br>~~GOGO~~<br><br>~~GO~~<br>~~RD~~<br>~~QO~~<br>~~eee~~|VDS= 25V,ID= 75A**<br>~~GOGO~~<br><br>~~RD~~<br>~~eee~~|
|IDSS<br>~~es~~<br>~~a ~~|Drain-to-Source Leakage Current<br><br> ~~a~~|–––<br>~~GD EN~~<br><br>~~GD~~|–––<br>~~EN~~<br><br>~~I~~<br>~~eee~~|20<br>~~EN~~<br><br>~~QO~~<br>~~eee~~|μA<br>~~GO~~<br><br>~~QO~~<br>~~eee~~|VDS= 40V, VGS= 0V<br>VDS= 40V,VGS= 0V,TJ= 125°C<br><br>~~eee~~|
|||–––<br>~~GD ~~|–––<br> ~~I ~~<br>~~eee~~|250<br> ~~QO~~<br>~~eee~~|||
|IGSS<br> <br>~~|~~<br>~~es~~|Gate-to-Source Forward Leakage<br> ~~a~~<br>~~|~~|–––<br>~~|~~|–––<br>~~eee~~<br>~~|~~|200<br>~~eee~~<br>~~|~~|nA<br>~~eee~~<br>~~|~~|VGS= 20V<br>VGS= -20V<br>~~eee~~<br>~~|~~|
||Gate-to-Source Reverse Leakage<br> ~~a~~<br>~~|~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|–––<br>~~eee~~<br>~~|~~<br>~~ee~~|-200<br>~~eee~~<br>~~|~~<br>~~ee~~|||
|Qg<br>~~|~~<br>~~es~~|Total Gate Charge<br>~~|~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|100<br>~~|~~<br>~~ee~~|150<br>~~|~~<br>~~ee~~|nC<br>~~|~~|ID= 75A**<br>VDS= 32V<br>VGS= 10V<br>~~|~~<br>~~®~~|
|Qgs<br>~~es~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~<br>~~GO~~|–––<br>~~ee~~<br>~~GO~~|31<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~GO~~|–––<br>~~GO~~|42|–––|||
|td(on)<br>~~ee~~<br>~~es~~|Turn-On DelayTime<br>~~GO~~|–––<br>~~GO~~|18|–––|ns<br>~~ee~~|VGS= 10V<br>VDD= 20V<br>ID= 75A**<br>RG= 3.0Ω<br>~~®~~<br>~~@~~<br>~~ee~~|
|tr<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|110<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~<br>~~es Gs~~|–––<br>~~ee~~<br>~~Gs~~|36<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~es Gs~~<br>~~ee~~|–––<br>~~ee~~<br>~~Gs~~<br>~~ee~~|58<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|LD<br>~~es ~~<br>~~ee~~|Internal Drain Inductance<br> ~~es Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|nH<br>~~ee~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~@~~<br>~~ee~~|
|LS<br>~~ee~~<br>~~a eee~~<br>~~es~~|Internal Source Inductance<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|7.5<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|||
|Ciss<br>~~ee~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~<br>~~eG~~|4340<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~<br>~~eG~~|pF<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|1030<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|||
|Crss<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|550<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|||
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|3300<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss<br>~~es~~<br>~~es~~|Output Capacitance<br>~~eG~~|–––<br>~~eG~~|920|–––||VGS= 0V,VDS= 32V, ƒ= 1.0MHz<br>~~®~~|
|Cosseff.<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~eG~~|–––<br>~~eG~~|1350|–––||VGS= 0V,VDS= 0V to 32V<br>~~®~~|



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1000 1000<br>100 || A 7OV vovlll|HALLHI<br>Zea el Say MTT<br>10 CAEPeEEE eorrom| | | aayIL 100 BOTTOM 48V YT (ell<br>HH a, 74 eeeomen<br>1 4.5V<br>eT ee ll | ff ee oor<br>et es Ue 4.5V ARK<br>PAT eect 20μs PULSE WIDTH ent! Y/N | 20μs PULSE WIDTH<br>0.1 QaCIel Tj = 25°C 10 YT aul il ieee Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 200<br>a TJ = 25°C re TJ = 175°C<br>T J  = 175°C 160<br>100<br>a>4a 120<br>||ey,fifV7ey eefT ee|tf eefofft ee eeFtfteee ZL TJ = 25°C<br>ALTA 80 LY<br>10<br>— os rs oe<br>|eea f eee| ee| ee| eeeos| eee| eee 40 feVl y |<br>V = 15V VDS = 15V<br>DS<br>20μs PULSE WIDTH 20μs PULSE WIDTH<br>1 Peppy 0 Ft<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 40 80 120 160<br>VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>A)<br> (<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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8000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>6000 C oss   = C ds  + C gd<br>Ciss<br>4000 neeite<br>2000 »~<<br>Coss<br>Se<br>Crss<br>aire<br>0 pes]<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.0<br>100.0 TJ = 175 ° C<br>10.0<br>TJ = 25°C<br>1.0<br>VGS = 0V<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID= 75A<br>| |<br>VDS= 32V<br>16 VDS= 20V<br>— =S-<br>12<br>rT |. | [Ay]] OL,<br>8<br>Aa<br>e/a<br>4<br>A<br>0 J<br>|  ZA<br>0 40 80 120 160<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100<br>100μsec<br>10<br>1msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse 10msec<br>1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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200 2.0<br>LIMITED BY PACKAGE ID = 75A<br>V GS  = 10V<br>160<br>1.5<br>120<br>Tel | | YX<br>rT XT ELLE<br>80<br>1.0<br>40<br>PTE tTiTN~ BaenPDTdenen<br>0<br>POPE Ee<br>0.5<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>1<br>D = 0.50<br>RR om TEA<br>0.20 || iMe<br>0.1<br>Se 0.10 |<br>TT 0.05 rT<br>0.02<br>0.01 =CeePe 0.01 SorFETITTLEa<br>SINGLE PULSE<br>aT ERB Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>0.001 eerT | PPB|| EE 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>2V0VGS<br>tp 0.01 Ω<br>B hp<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>7<br>|<br>IAS a ni<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V. | QGS -  ; 7 QGD i ,<br>VG<br>**----- End of picture text -----**<br>


Charge 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>oo<br>50K Ω<br>12V .2 μ F<br>.3 μ F<br>re D.U.T. | +-VDS<br>VGS<br>ere<br>3mA<br>a e |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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600<br>500<br>400 seraPN] BOTTOM | 75A<br>300<br>NNee<br>200<br>SNS<br>100 Hoe SSS<br>0<br>25 50 75 100 125 150 175<br>FSSC<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.0 TTT|<br>ID = 250μA<br>3.0<br>SEaDNeeee<br>TTTEL TN<br>2.0<br>PELELEEDSN<br>rs<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>ETEEEET<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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10000<br>Allowed avalanche Current vs<br>1000 Duty Cycle = Single Pulse avalanche  pulsewidth,  tav<br>assuming Δ Tj = 25°C due to<br>avalanche losses. Note: In no<br>case should Tj be allowed to<br>0.01 exceed Tjmax<br>100<br>poe iilEe<br>0.05<br>Pt eee<br>0.10<br>10<br>PEATE EPP EEA EPSP FEPRISSSRSETTETE | SFT<br>1 PT | TEEe<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>400 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A   Purely a thermal phenomenon and failure occurs at a<br>300 Ep NN     temperature far in excess of T    every part type. jmax. This is validated for<br>NTL 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>200<br>PNT TEL   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>PLING EEL EL<br>    avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>100<br>PetPNG     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>7.  Δ T = Allowable rise in junction temperature, not to exceed<br>Pt PN EE<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 Pe Ey [PSK]   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | V i t GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (a8 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vo p - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>la h > ! ab l e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

## www.irf.com 

8 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER I RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO I¢aR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

9 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR 8024002. DATE CODE<br>ASSEMBLY YEAR 0 =  2000<br>t assemblyes "Lead line - F ree”position LOT CODE qoPU e t U WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TOR 80 P00224 4 P =  DESIGNATES LEAD - FREEDATE CODEPRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE yOY U oy U YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


**Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

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www.irf.com<br>**----- End of picture text -----**<br>


## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [251 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO |TOR IRL3103L719C<br>1789 DATE CODE<br>No te : "P”indicain t assemblyes “Lead line — F ree”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TOR 17 P71989 4 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

11 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) ° 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>i 0.342 (.0135)<br>FEED DIRECTION - 1.85 (.073)1.65 (.065) 11.60 (.457)11.40 (.449) 15.42 (.609)15.22 (.601) TT 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069) T<br>10.90 (.429)10.70 (.421) 1.25 (.049) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>fe} a<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO E 30.40 (1.197)<br>NOTES :       MAX.<br>° 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.03924.40 (.961)3 IE ) 4<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.11mH RG = 25 Ω , IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

This is only applied to TO-220AB pakcage. 

This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

TO-220 device will have an Rth value of 0.65°C/W. 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for ak typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. 

All AC and DC test condition based on former Package limited current of 75A. 

Data and specifications subject to change without notice. This product has been designed and qualified for theIndustrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2012 

www.irf.com 

12 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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