# Power MOSFET, N Channel, 40 V, 162 A, 4000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2777397/)

**URL**: https://novapart.co/products/IRF1404STRLPBF/power-mosfet-n-channel-40-v-162-a-4000-ohm-to-263
**SKU**: IRF1404STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0300
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 162A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777397/)

## PD -95104 

## IRF1404SPbF IRF1404LPbF HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 40V<br>R  = 0.004Ω<br>DS(on)<br>G<br>ID = 162A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Seventh Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for lowprofile applications. 

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D [2] Pak TO-262<br>IRF1404SPbF IRF1404LPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~ee~~|**Absolute Maximum Ratings**|||
|---|---|---|---|
|~~ee~~|**Parameter**<br>~~-—~~|**Max.**<br>~~—~~|**Units**|
|ID@ TC= 25°C<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>~~-—~~|162<br>~~—~~|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~-—~~|115<br>~~—~~||
|IDM<br>~~i~~|Pulsed Drain Current<br>~~-—~~<br>~~i~~|650<br>~~—~~<br>~~i~~||
|PD@TA= 25°C<br>~~Oo~~<br>|Power Dissipation<br>~~- —~~<br>~~Oo~~<br>|3.8<br>~~—~~<br>~~Oo~~<br>|W<br>~~Oo~~<br>~~—~~|
|PD@TC= 25°C<br>~~Oo~~|Power Dissipation<br>~~Oo~~|200<br>~~Oo~~|W<br>~~Oo—~~|
|~~OO~~|Linear DeratingFactor<br><br>~~OO~~|1.3<br><br>~~OO~~|W/°C<br>~~—~~<br>~~OO~~|
|VGS<br>~~OO~~|Gate-to-Source Voltage<br>~~OO~~|± 20<br>~~OO~~|V<br>~~OO~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|519<br>~~a~~|mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|95<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~|20<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55 to +175<br>-55 to +175<br>~~a~~|°C<br>~~a~~|
|~~a~~|Soldering Temperature, for 10 seconds<br>~~a~~<br>~~[J~~|300 (1.6mm from case )<br>~~a~~<br>~~[J~~||



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03/11/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~es~~<br>~~es~~|40<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|V<br>~~ee~~<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|0.036<br>~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~@~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~ee~~|––– <br>~~ee~~<br>~~ee~~<br>~~es~~|0.00350.004<br>~~es~~<br>~~es~~|0.00350.004|Ω|VGS= 10V, ID= 95A<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~es ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2.0<br>~~ee ~~<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|4.0<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|VDS= 10V, ID= 250µA<br>~~@~~<br>~~@~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~ee~~|106<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|S<br>~~ee~~|VDS= 25V, ID= 60A<br>~~@~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~eee~~<br>~~|~~|–––<br> ~~es~~<br>~~ee~~<br>~~eee~~<br>~~||~~|20<br>~~ee~~<br>~~eee~~<br>~~|~~|µA<br>~~ee~~<br>~~eee~~|VDS= 40V, VGS= 0V<br>~~@~~|
|||–––<br>~~ee~~<br>~~eee~~<br>~~|~~|–––<br>~~ee~~<br>~~eee~~<br>~~||~~|250<br>~~ee~~<br>~~eee~~<br>~~|~~||VDS= 32V, VGS= 0V, TJ= 150°C<br>~~@~~|
|~~a~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ~~<br>~~|~~<br>~~ee~~|–––<br> ~~ee~~<br>~~| |~~|200<br>~~ee~~<br>~~|~~|nA<br>~~ee~~|VGS= 20V<br>~~@~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|–––<br>~~ee~~|-200<br>~~ee~~||VGS= -20V|
|Qg<br>~~a~~|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>ee|160<br>~~ee~~|200<br>~~ee~~|nC|ID= 95A<br>VDS= 32V<br>VGS= 10V<br>~~@O~~|
|Qgs<br>~~a~~<br>~~ee~~|Gate-to-Source Charge|–––<br>ee|35|–––|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge|–––|42|60|||
|td(on)<br>~~ee~~<br>ee<br>es|Turn-On Delay Time<br>~~a~~<br>|–––<br>~~a~~<br><br>ee|17<br>~~a~~<br><br>ee|–––<br>~~a~~<br><br>ee||VDD= 20V<br>ID= 95A<br>RG= 2.5Ω<br>RD= 0.21Ω<br>~~@O~~<br>~~0~~|
|tr<br>~~ee~~<br>ee<br>es|Rise Time<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>ee|140<br>~~a~~<br>~~ee~~<br>ee|–––<br>~~a~~<br>~~ee~~<br>ee|||
|td(off)<br>ee<br>es<br>~~en~~|Turn-Off Delay Time<br>~~a~~<br><br>~~ee~~|–––<br>~~a~~<br><br>ee|72<br>~~a~~<br><br>ee|–––<br>~~a~~<br><br>ee|||
|tf<br>es<br>~~en~~|Fall Time<br>~~ee~~|–––<br>ee|26<br>ee|–––<br>ee|||
|LS<br>~~en~~<br>ee|Internal Source Inductance<br>~~ee~~|–––|7.5|–––|nH|Between lead,<br>and center of die contact<br>~~0~~|
|Ciss<br>~~en ~~<br>ee<br>ee|Input Capacitance<br> ~~ee~~|–––|7360|–––|pF<br>ee|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~0~~<br>@|
|Coss<br>ee<br>ee<br>es|Output Capacitance<br>es|–––|1680|–––|||
|Crss<br>ee<br>es<br>es|Reverse Transfer Capacitance<br>es|–––|240|–––|||
|Coss<br>es <br>es<br>es|Output Capacitance<br> es|–––|6630|–––||VGS= 0V, VDS= 1.0V, ƒ = 1.0MHz<br>@|
|Coss<br>es<br>es|Output Capacitance|–––|1490|–––||VGS= 0V, VDS= 32V, ƒ = 1.0MHz|
|Cosseff.<br>es<br>aee|Effective Output Capacitance<br>ee|–––<br>ee|1540<br>ee|–––<br>ee||VGS= 0V, VDS= 0V to 32V|



Notes: ~~)~~ Repetitive rating; pulse width limited by ~~©~~ Coss eff. is a fixed capacitance that gives the same charging time a max. junction temperature. (See fig. 11) as Coss while VDS is rising from 0 to 80% VDSS @ Starting TJ = 25°C, L = 0.12mH © Calculated continuous current based on maximum allowable RG = 25Ω, IAS = 95A. (See Figure 12) 

junction temperature. Package limitation current is 75A ° ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, @ Use IRF1404 data and test conditions. TJ ≤ 175°C 

- ® Pulse width ≤ 300µs; duty cycle ≤ 2%. 

- When mounted on 1" square PCB ( FR-4 or G-10 Material ). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

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 1000  1000<br>VGS VGS<br>TOP 15V ot a TOP 15V etrn<br>10V8.0V7.0V A0 a”ee A ee 10V8.0V7.0V aa”?ee2<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V HI gr 5.0V Ht ATT<br>BOTTOM 4.5V BOTTOM 4.5V<br>’ Zaani mal Ze<br>ye Ct P Zethiies<br>4.5V<br> 100 ATO——_g V/ATIT Il  100 |)TTT | AMATTT| HIF<br>Ay ee Lp rd 4.5V a ;__{a)"| 4 y (ee 2 a ee ee ee<br>Za ae aa a<br>7 JAGR ee ell "AA<br> 10 E T 20µs PULSE WIDTHT  = 25J °C  10 y ee 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 159A<br>T  = 25  CJ °<br>T  = 175  CJ ° 2.0<br>Soo o der<br>AA} ICTTEE CPTI<br>1.5<br> 100 AT TT TTT FLL Pua er<br>=a 1.0 4<br>Ed LETTE<br>Perper<br>0.5<br>PEEP] EELEEE<br>PEELE<br>V      = 25VDS<br> 10 PEE E EL 20µs PULSE WIDTH 0.0 DUA AA AEEERE E ESSILEBARBARA EE VGS = 10V<br>4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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12000 20<br>VGSGS = 0V, f = 1MHz ID = 95A<br>TT] Cississ = Cgsgs + Cgd ,gd , C      SHORTEDdsds Po TELE<br>10000 CCrssossCrssossrssossoss === CCgddsCgddsgddsds + Cgdgd 16 VVDSDS == 32V 20V<br>PH ELL<br>8000 Cississ<br>STnTn ST ) poo 12 SEREEEfe t aeSeSEeZ<br>6000<br>S o e Eee<br>8<br>4000<br>SAA TTT ATT TTT<br>Cossoss<br>| | SaaS 4Seeeen<br>4<br>2000<br>i a<br>0 SSECeCe Crssrss EoStStt 0 AYi tt | | T FOR TEST CIRCUITSEE FIGURE       13<br> 1  10  100 0 40 80 120 160 200 240<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>T  = 175  CJ °<br>wan  1000 pt<br> 100 10us<br> 100 100us<br>T  = 25  CJ °<br>1ms<br> 10<br>Pf==[|== ===| |  10 SS | 10ms at<br> T TCJ = 25  C= 175  C° °<br> 1 Pie; | EEE V      = 0 V GS  1 i  Single Pulse e e eesLTT<br>0.4 0.8 1.2 1.6 2.0 2.4  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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12000<br>VGSGS = 0V, f = 1MHz<br>=<br>TT] Cississ Cgsgs + Cgd ,gd , C      SHORTEDdsds<br>10000 ===<br>CCrssossCrssossrssossoss CCgddsCgddsgddsds + Cgdgd<br>PH<br>8000 Cississ<br>STnTn ST ) poo<br>6000<br>S o e<br>4000<br>SAA<br>Cossoss<br>| |<br>2000<br>i<br>Crssrss<br>0 SSECeCe EoStStt<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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200<br>LIMITED BY PACKAGE<br>160<br>com ae Ve s D.U.T. -<br>Pe ne 1 7<br>120<br>PT EPA EEE tov |<br>≤ 1<br>PT tT P| ft pase wich ≤ 0.1 % ys<br>80 SEER NEEa Sees uty Factor :<br>Fig 10a.   Switching Time Test Circuit<br>TN<br>PTET<br>40 VDS<br>90%<br>PET ETTELT LE TTT yy LING a<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PTET TT ELE 10% / \ mn<br>VGS \<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 a<br>ee eeee<br>S D = 0.50 ere<br>en t tit ttt<br>eee nn eo<br>0.1 P — 0.200.10 "a _Se _—— peeA A E<br>PeOH PDM<br>0.05<br>t1<br>celia 82 Zam ee<br>0.02 SINGLE PULSE t2<br>>ras 0.01 Seal eT) (THERMAL RESPONSE) O TTTOETT Notes:<br>1. Duty factor D = t   / t1 2<br>0.01 a ll 2. Peak TJ = P DM x  ZthJC + TC<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1200<br>15V ID<br>NE<br>TOP 39A<br>1000 67A<br>VDS L DRIVER NBNE E BOTTOM 95A<br>800 PIN [> tit i tl<br>R G D.U.T +<br>- [V][DD]<br>IAS A 600<br>20V<br>tp 0.01Ω<br>an E NE<br>400 IN RON<br>Fig 12a.   Unclamped Inductive Test CircuitV(BR)DSS PT NNUINFE<br>—_ tp 200 Pe tT [AARC]<br>eee [LL<br>SANE<br>0 ae<br>25 50 75 100 125 150 175<br>/ | are...“ °<br>Starting T  , Junction TemperatureJ (  C)<br>IAS w aa<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>10 ve [H] QGS QGD [G] 50<br>VG 48<br>oo, B ERRRREED2<br>46<br>Charge _ B annan<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator 44<br>Same Type as D.U.T.<br>a t A<br>50KΩ<br>12V .2µF 42<br>.3µF<br>The D.U.T. | +-VDS e r EL LL<br>40<br>0 20 40 60 80 100<br>VGS<br>& TL ELELL EL L<br>3mA IAV , Avalanche Current ( A)<br>a |<br>IG ID<br>Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>V DSav  , Avalanche Voltage ( V )<br>**----- End of picture text -----**<br>


**Fig 12d.** Typical  Drain-to-Source Voltage Vs. Avalanche Current 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>@ Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop e_<br>® Inductor Curent VW“ =<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-channel HEXFET[®] Power MOSFETs 

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## Dimensions are shown in millimeters (inches) 

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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL oY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO IER 002L<br>80 24 D AT E  COD E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y V J U 7 U1? U YE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL —<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y Ju<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?U 7U YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

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IGBT<br>1-  GAT _ E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL —<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO TORIRL3103L719¢<br>Note: "P" in assembly line 1789 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL CS<br>RECTIFIER IRL3103L<br>LOGO TORP7I9A<br>DATE CODE<br>1789<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>_ 1.65 (.065) alk: 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>] id 1.75 (.069) Tl,<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>i aaE<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I a 4<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1404STRLPBF/power-mosfet-n-channel-40-v-162-a-4000-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf1404strlpbf/mosfet-n-ch-40v-162a-to-263/dp/2777397)
---

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