# Power MOSFET, N Channel, 40 V, 162 A, 4000 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8648018/)

**URL**: https://novapart.co/products/IRF1404PBF/power-mosfet-n-channel-40-v-162-a-4000-ohm-to
**SKU**: IRF1404PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8310
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 162A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8648018/)

PD-94968B 

## IRF1404PbF 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Seventh Generation HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 40V<br>R  = 0.004 Ω<br>DS(on)<br>G<br>ID = 202A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~ee~~<br>~~ee~~<br>~~**ee**~~|**Parameter**<br>~~es~~<br>~~**ee**~~|**Max.**<br>~~es~~<br>~~©~~<br>~~a~~<br>~~nl~~|**Units**<br>~~es~~<br>~~nl~~|
|---|---|---|---|
|I~~D~~@ T~~C~~ =25°C<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|Continuous Drain Current, V~~GS~~@ 10V<br>~~es~~<br>~~**ee**~~|202<br>~~es~~<br>~~©~~<br>~~a~~<br>~~nl~~|A<br>~~es~~<br>~~nl~~|
|~~DC~~<br>ID@ TC =100°C<br>~~ee~~<br>~~**ee**~~|~~GS~~<br>Continuous Drain Current, VGS@ 10V<br>~~**ee**~~|143<br>~~©~~<br>~~a~~<br>~~nl~~||
|IDM<br>~~**ee**~~|Pulsed Drain Current<br>~~**ee**~~|808<br>~~a~~<br>~~nl~~||
|PD@TC= 25°C<br>~~**ee**~~<br>~~ee~~|Power Dissipation<br>~~**ee** ~~<br>~~ee~~|333<br> ~~a~~<br>~~nl~~<br>~~ee~~|W<br>~~nl~~<br>~~ee~~|
|~~ee~~|Linear DeratingFactor<br>~~ee~~|2.2<br>~~ee~~|W/°C<br>~~ee~~|
|VGS<br>~~ee~~|Gate-to-Source Voltage<br>~~ee~~|± 20<br>~~ee~~|V<br>~~ee~~|
|EAS<br>~~ie~~|Single Pulse Avalanche Energy<br>~~ie~~|620<br>~~ie~~<br>~~A~~|mJ<br>~~ie~~<br>~~A~~|
|IAR<br>~~ns~~<br>~~es~~|Avalanche Current<br>~~ns~~<br>~~es~~|See Fig.12a, 12b, 15, 16<br>~~es~~<br>~~A~~|A<br>~~es~~<br>~~A~~|
|EAR<br>~~ns~~<br>~~es~~|Repetitive Avalanche Energy<br>~~ns~~<br>~~es~~||mJ<br>~~es~~<br>~~A~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|1.5<br>~~A~~<br>~~a~~|V/ns<br>~~A~~|
|TJ<br>T~~STG~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>-55  to + 175<br>~~ee~~|°C<br>~~ee~~|
|~~STG~~<br>~~—~~|Storage Temperature Range<br>SolderingTemperature, for 10 seconds<br>~~—~~<br>~~ee~~|300(1.6mm from case)<br>~~—~~<br>~~ee~~||
|~~nO~~|Mounting Torque, 6-32 or M3 screw<br>~~nO~~|10 lbf•in (1.1N•m)<br>~~nO~~|~~nO~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.45|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|~~ee~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>~~es~~<br>~~es~~|**Typ. **<br>ee<br>~~ee~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~|40<br>~~es ~~<br>~~ee~~<br>~~es~~|–––<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250μA|
|ΔV(BR)DSS/ΔTJ<br>~~PR~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~PR~~|–––<br>~~es~~<br>~~ee~~|0.039 <br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~PR~~|Static Drain-to-Source On-Resistance<br>~~PR~~|–––|0.0035 0.004|0.0035 0.004|Ω|VGS= 10V, ID= 121A<br>~~®~~|
|VGS(th)<br>~~PR~~<br>~~PR~~|Gate Threshold Voltage<br>~~PR~~<br>~~PR~~|2.0<br>|–––<br>|4.0<br>|V<br>|VDS= VGS, ID= 250μA<br>~~®~~|
|gfs<br>~~PR~~|Forward Transconductance<br>~~PR~~|76<br><br>~~ee ee~~|–––<br><br>~~ee~~|–––<br><br>~~ee~~|S<br><br>~~eee~~|VDS= 25V, ID= 121A|
|IDSS<br>~~PR~~|Drain-to-Source Leakage Current<br>~~PRee~~|–––<br>~~ee~~<br>~~ee ee~~|–––<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~|μA<br>~~ee~~<br>~~eee~~|VDS= 40V,VGS= 0V|
|||–––<br>~~ee~~<br>~~ee ee~~<br>ee|–––<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 32V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ee~~<br>~~ee~~<br>ee|–––<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|nA<br>~~eee~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>ee|–––<br>~~ee~~|-200<br>~~ee~~||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|131<br>~~ee~~|196<br>~~ee~~|nC|ID= 121A<br>VDS= 32V<br>VGS= 10V<br>~~:~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|36<br>~~ee~~|–––<br>~~ee~~|||
|Qgd<br>~~+~~|Gate-to-Drain("Miller")Charge<br>~~+~~|–––|37|56|||
|td(on)<br>~~+~~|Turn-On DelayTime<br>~~+~~|–––|17|–––|ns|VDD= 20V<br>ID= 121A<br>RG= 2.5Ω<br>RD= 0.2Ω<br>~~:~~<br>®|
|tr<br>~~+~~<br>~~Re~~|Rise Time<br>~~+~~<br>|–––<br>|190<br>|–––<br>|||
|td(off)<br>~~Reen~~|Turn-Off DelayTime<br>~~en~~|–––<br>~~ee~~|46<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~Reen~~|Fall Time<br>~~en~~|–––<br>~~ee~~|33<br>~~ee~~|–––<br>~~ee~~|||
|LD<br>~~en~~|Internal Drain Inductance<br>~~en~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®|
|LS<br>~~en~~<br>~~pf~~|Internal Source Inductance<br>~~en ~~<br>~~pf~~|–––<br> ~~ee~~|7.5<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~|–––|5669|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5|
|Coss<br>~~pf~~<br>~~ee~~|Output Capacitance<br>~~pf~~<br>~~ee~~|–––<br>~~ee~~|1659<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|223<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br>~~ee~~<br>~~a~~<br>~~Rs~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|6205<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>~~PO~~<br>~~ee~~|
|Coss<br>~~a~~<br>~~Rs~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~©~~|–––|1467|–––||VGS= 0V,VDS= 32V, ƒ= 1.0MHz<br>~~PO~~<br>~~ee~~<br>~~Po~~|
|Cosseff.<br>~~Rs ~~<br>~~ee~~|Effective Output Capacitance<br> ~~ee~~<br>~~©~~|–––|2249|–––||VGS= 0V, VDS= 0V to 32V<br>~~ee~~<br>~~Po~~|



oe Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

Starting TJ = 25°C, L = 85 μ H 

RG = 25 Ω , IAS = 121A. (See Figure 12) fo) ISD ≤ 121A, di/dt ≤ 130A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

- © Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 

Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM4.5V BOTTOM4.5V<br> 100 eeem  100 een) Aol<br>V eos oo  —?y 4.5V<br>MAC tT Pe<br> 10  10<br>Ziti 4.5V<br>Sa oad Al<br>oo te ee eens etree ere<br>A =<br> 1 HTT Qnilima 20μs PULSE WIDTH T  = 25J °C  1 THMPITTP 20μs PULSE WIDTH T  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 202A<br>T  = 25  CJJ °<br>See Coe<br>FA Zee 2.0 SERRE<br>T  = 175  C J °<br>PoC Pee<br>AHHHALLALL LLL 1.5 SERGGR08P7 Z| 200<br> 100<br>fp YELL EE<br>| Ty | tT tT tf tT tT tT tt pt ft ft TT 1.0 ca<br>TVyA-FTT rrtTyA-FTT rrtT-FTT rrtTTT rrtT rrtTtT te tT tet TT tT pea|<br>0.5<br>SCC SORE REEEEEe<br>V      = 25VDSDS<br> 10 POE) 20μs PULSE WIDTH 0.0 EEEEEEEEEEEE: PLT TTT ey VGS= 10V<br>4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000<br>T  = 25  CJJ °<br>See<br>FA Zee<br>T  = 175  C J °<br>PoC<br>AHHHALLALL LLL<br> 100<br>fp<br>| Ty | tT tT tf tT tT tT tt pt ft ft TT<br>TVyA-FTT rrtTyA-FTT rrtT-FTT rrtTTT rrtT rrtTtT te tT tet TT tT<br>SCC<br>V      = 25VDSDS<br>POE) 20μs PULSE WIDTH<br> 10<br>4 5 6 7 8 9 10 11 12<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 20<br>VCGS  iss  = C = 0V,     f = 1 MHZgs + Cgd, Cds  SHORTED ID = 121A VVDSDS== 32V 20V<br>8000 TT Crss    = Cgd  16 FaRSnnGE<br>C  = C + C<br>oss   ds  gd<br>1 a<br>6000 Ciss<br>12<br>4 P| |  tT rT TT UT UT UCLA<br>q a<br>ni<br>4000<br>Coss<br>2000 erTN]0 ee 8 P|ee | LTA<br>4<br>Crss<br>0<br>FOR TEST CIRCUIT<br>1 SSTR 10 100 | 0 EeeYiJY | yi ||  fis’ SEE FIGURE       13<br>0 50 100 150 200<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>T  = 175  CJ ° BY RDS(on)<br> 100 Po eee  1000 rete oo<br>10us<br>++}TAAL FtELL LL_HI LL pees CCPtet ttt<br> 10  100 100us<br>oo//iceeeeeeeee ETRE sscRaLLL<br>T  = 25  CJ °<br>Ee ee eee eee 1ms a<br> 1 oT ooeeeeeeeee  10 Te 10ms<br>=. === == == = — = — SS<br> T TCJ == 175  C 25  C° °<br>V      = 0 V GS  Single Pulse<br>0.1  1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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220<br>200 LIMITED BY PACKAGE<br>NS et oan<br>180 PpPy[“s,d [(\ [> | [ | [ [ [Rn[ |] VvGs DUT<br>ee<br>160 -<br>{| eee ee G<br>140 P| | [ \ pt | | ft ft Vop<br>120 PrFt[| fT|| [[ jf{[\fe|| [Ps[|8.|pf[| [pd[ |[ |f )t 10V |<br>≤ 1<br>100 Prrptf{|[| || ft[[ tit-—~\lVY ft+[ ft|| ft[SN]etPot ft[ [fT f4 PD u tylseFactor Width ≤ 0.1 % ys<br>80<br>oe<br>rtretetstttttfhOIN Fig 10a.   Switching Time Test Circuit<br>60 P {| | [ -— | f[ | ff [ fT KY<br>4020 rrYrPa{|[|[| ||| [{[[ [—[—-—eV||| [[f[ ||| [[Jf [[[| [[f[ [[\Y[ YjY V90%DS |V,[\<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>10%<br>VGS f\« l e > |\ o l e ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1<br>Pt—SSC SCT<br>rr ee eee ee ee eee eee eee _____<br>a D = 0.50 ee eee<br>0.1 eee 0.20 ee Cs ee ee<br>ee 0.10<br>er 0.05<br>ey<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) PDM<br>0.01 =aeer — tt BR PTE ee EEL  ee TT<br>t1<br>Es a a es es sO Oe QO OO OO t2<br>Ee ee ee ee ee ee<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>2. Peak TJ = P DM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>a 20V i<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>. tp J<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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Ce QG<br>OV QGS QGD<br>VG /<br>**----- End of picture text -----**<br>


Charge ~~=~~ 

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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 μ F<br>.3 μ F<br>The D.U.T. | +-VDS<br>VGS<br>fina<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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1500<br>ID<br>Pt TOP 49A<br>101A<br>1200 BOTTOM 121A<br>cocoKGRaee<br>PNT tt<br>900<br>SNe<br>NOEN ff<br>600<br>PSK IKEf<br>300 POSP| NN<br>USN<br>0<br>25 Pe 50 75  | 100 125 S S 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.0 PN<br>3.0 Ean eeee<br>ID = -250μA<br>ELL LPN GE<br>2.0<br>SGeeeeeen<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>FLEE<br>TJ , Temperature ( °C )<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>-VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>SSS earnnreremear 0.01 | Allowed avalanche Current vs<br>100 avalanche  pulsewidth,  tav<br>assuming  Δ Tj  = 25°C due to<br>avalanche losses<br>0.05<br>STITT ay LS<br>0.10<br>10 PPT hy CTSNET TTHT<br>PSE EHEC ESTEE EH<br>PT EET ET ETE ETE ss<br>ee ee ll<br>1<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>400 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>NV | TOP          Single Pulse                 | (For further info, see AN-1005 at www.irf.com)<br>350 INE BOTTOM   10% Duty Cycle | 1. Avalanche failures assumption:<br>ID = 121A   Purely a thermal phenomenon and failure occurs at a<br>300 TINNe| |     temperature far in excess of T    every part type. jmax. This is validated for<br>250 Pi|VNt_}]ee eee ee 2. Safe operation in Avalanche is allowed as long asTjmax<br>    is not exceeded.<br>Pte | |] |] [|<br>200 ri  ft INE EE 3. Equation below based on circuit and waveforms shown<br>P| | | KL] | | | ft [|     in Figures 12a, 12b.<br>150 P| | | IN | | tt ft fy 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>rt | | | AE ET tT<br>100 riee | || f[||jut.RET FE |]TE| 5. BV = Rated breakdown voltage (1.3 factor accounts for    voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>50 P|ee| tT tt tT | INeeELee 7.  Δ T = Allowable rise in junction temperature, not to exceed<br>0 rT; | | f | ft |} ft [SAae    T  tav = jmax Average time in avalanche.(assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| —| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _ t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "\ Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent e s ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 17.** For N-channel HEXFET[®] Power MOSFETs 

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**==> picture [245 x 53] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER I RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR o19C<br>1789 DATE CODE<br>Note: "P" in assembly line position ASSEMBLY YEAR 0 =  2000<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2012 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1404PBF/power-mosfet-n-channel-40-v-162-a-4000-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf1404pbf/mosfet-n-40v-162a-to-220/dp/8648018)
---

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