# Power MOSFET, StrongIRFET™, N Channel, 135 V, 129 A, 6700 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2781106RL/)

**URL**: https://novapart.co/products/IRF135S203/power-mosfet-strongirfettm-n-channel-135-v-129-a
**SKU**: IRF135S203
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1700
**Stock**: 25+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:129A; Drain Source Voltage Vds:135V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 441W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 135V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 129A |
| Drain Source On State Resistance | 6700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781106RL/)

International T&R Rectitier 

## Strong _IR_ FET™ IRF135B203 IRF135S203 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

HEXFET[® ] Power MOSFET 

**VDSS DSS 135V RDS(on) typ.DS(on) typ.typ. 6.7m**  **max 8.4m**  **ID (Silicon Limited) D (Silicon Limited) 129A** ~~=~~ 

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D VDSS DSS  135V<br>RDS(on) typ.DS(on) typ.typ. 6.7m <br>G<br>            max  8.4m <br>S ID (Silicon Limited) D (Silicon Limited)  129A<br>**----- End of picture text -----**<br>


- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant, Halogen-Free 

D S ~~e~~ D S G @ G TO-220AB D[2] -Pak IRF135B203 IRF135S203 

|||||**G**||**D**<br>**S**|
|---|---|---|---|---|---|---|
|||||Gate||Drain<br>Source|
||||||||
|||**Standard Pack**||**Standard Pack**|||
|**Base part number**|**Package Type**|**Form**||**Quantity**||**Orderable Part Number**|
|IRF135B201|TO-220|Tube||50||IRF135B203|
|IRF135S201|D2-Pak|Tape and Reel||800||IRF135S203|



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28<br>26 ID = 77A<br>24 sooo<br>22 SIPC<br>20 | Mt | | tt tt<br>18 |<br>16 TJ = 125°C<br>14 ARCEEPPRERPIN, | | [| [|<br>12<br>OE<br>10 Pitt| | | tf ft ft<br>8 TJ = 25°C<br>6 FREER EE<br>4 HEEL<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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140<br>120 es<br>~<br>100<br>PNN<br>PT Ke<br>8060 EAN<br>NI<br>ee<br>40<br>20<br>CCCoy<br>0 Ft | | tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On– Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRF135B203/IRF135S203 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C<br>Continuous Drain Current|Continuous Drain Current,VGS @10V|129|A|
|ID @TC= 100°C<br>Continuous Drain Current|Continuous Drain Current,VGS @10V|91||
|IDM<br>Pulsed Drain Current|Pulsed Drain Current|512||
|PD @TC= 25°C<br>Maximum Power Dissi|Maximum Power Dissipation|441|W|
|Linear Deratin|Linear DeratingFactor|2.9|W/°C|
|VGS<br>Gate-to-Source Volta|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG<br>Operating Junction and<br>Storage Temperature Range|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
|So|SolderingTemperature,for 10 seconds (1.6mm fromcase)|300||
|Mountin|MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||



## **Avalanche Characteristics** 

|EAS (Thermally limited)|SinglePulseAvalancheEnergy |595|mJ|
|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|870||
|IAR|Avalanche Current|See Fig 15, 15, 23a, 23b|A|
|EAR|Repetitive Avalanche Energy||mJ|



|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RJC|Junction-to-Case|–––|0.34|°C/W|
|RCS|Case-to-Sink,Flat Greased Surface|0.50|–––||
|RJA|Junction-to-Ambient|–––|62||
|RJA|Junction-to-Ambient(PCB Mount) |–––|40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

**Symbol Parameter Min. Typ. Max. Units Conditions** ~~esGO~~ V(BR)DSS Drain-to-Source Breakdown Voltage 135 ––– ––– V VGS = 0V, ID = 250µA ~~ree~~ ~~**G** G ee~~ V(BR)DSS/TJ  Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C Reference to 25°C, ID = 5mA  ~~ee~~ RDS(on) ~~es~~ Static Drain-to-Source On-Resistance ––– ~~Ge~~ 6.7 8.4 m VGS = 10V, ID = 77A ~~a~~ VGS(th) Gate Threshold Voltage ~~a~~ 2.0 ~~rsrs rrGs~~ ––– 4.0 ~~es~~ V VDS = VGS, ID = 250µA ––– ––– 20 VDS =135 V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ~~eePt~~ ––– ––– 250 ~~Po~~ VDS = 108V,VGS = 0V,TJ =125°C ~~en es ee~~ Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V ~~—————,_,—~~ IGSS Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V RG Gate Resistance ––– 2.1 ~~r~~ –––  ~~re~~ ~~**e** s ee Qeee Po~~ 

## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 200µH, RG = 50, IAS = 77A, VGS =10V. 

-  ISD  77A, di/dt  1700A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-     Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 41A, VGS =10V. 

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~~TER Rectifier~~ 

IRF135B203/IRF135S203 ~~LLL~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~i~~|**Parameter**<br>~~ee~~|**Min.**<br>~~rs~~|**Typ. **<br>~~ss~~|**Max. Units**<br>~~ss~~|**Max. Units**|**Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|gfs<br>~~i~~<br>~~es~~|Forward Transconductance<br>~~ee~~<br>|200<br>~~rs~~<br>~~es~~<br>|–––<br>~~ss~~<br>~~ee~~<br>|–––<br>~~ss~~<br>|S|VDS= 10V,ID= 77A|
|Qg<br>~~i~~<br>~~a~~<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~rs ~~<br>~~es~~<br>~~es~~<br><br>~~ee~~<br>|180<br> ~~ss~~<br>~~es~~<br>~~ee~~<br><br>~~es~~<br>|270<br>~~ss~~<br>~~es~~<br><br>|nC|ID= 77A<br>VDS= 68V<br>VGS= 10V|
|Qgs<br>~~es~~<br>~~ee~~<br>~~a~~|Gate-to-Source Charge<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|43<br>~~ee~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>|||
|Qgd<br>~~es~~<br>~~ee~~<br>~~a~~|Gate-to-Drain Charge<br>~~ee~~<br>~~es~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|46<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|||
|Qsync<br>~~ee~~<br>~~aee~~|Total Gate Charge Sync.(Qg–Qgd)<br>|–––<br>~~ee ~~<br><br>~~ee~~|134<br> ~~es~~<br>|–––<br>|||
|td(on)<br>~~aee~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|18<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 81V<br>ID= 77A<br>RG= 2.7<br>VGS= 10V|
|tr<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br>|73<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>|||
|td(off)<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~a~~|Turn-Off DelayTime<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br><br>~~ee~~<br>|114<br>~~ee~~<br>~~es~~<br><br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br><br>|||
|tf<br>~~es~~<br>~~es~~<br>~~a~~<br>~~ee~~|Fall Time<br>~~es~~<br>~~ee~~<br><br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|81<br>~~es~~<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~ee~~<br><br>|||
|Ciss<br>~~es~~<br>~~a~~<br>~~ee~~|Input Capacitance<br><br>~~ee~~<br>|–––<br>~~es~~<br><br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|9700<br><br>~~es~~<br>~~ee~~<br>|–––<br><br>~~ee~~<br>|pF<br> ee|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|540<br> ~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>|–––<br>~~ee~~<br><br>~~ee~~|250<br><br>~~ee~~|–––<br><br>~~ee~~|||
|Coss eff.(ER)<br>~~a ee~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|520<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~||VGS= 0V, VDS = 0V to 108V|
|Coss eff.(TR)<br>~~a ee~~<br>~~PP~~|Output Capacitance(Time Related)<br>~~ee~~<br>~~PP~~|–––<br>~~ee~~<br>~~ee~~<br>~~PP~~|700<br>~~ee~~<br>~~ee ~~<br>~~PP~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~PP~~||VGS= 0V,VDS = 0V to 108V|
|**Diode Characteristics**<br>~~a~~<br>~~rs~~|||||||
|**Symbol**<br>~~a~~|**Parameter **<br>~~a~~|**Min.**|**Typ. **|**Max.**<br>~~rs~~|**Units**<br>~~rs~~|**Conditions**<br>~~rs~~|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––|–––|129<br>~~rs~~|A<br>~~rs~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~rs~~|
|ISM<br>~~a~~<br>~~es~~|Pulsed Source Current<br>(BodyDiode)<br>~~a~~<br>~~es~~|–––<br>~~res~~|–––<br>~~rs~~|512<br>~~rs~~<br>~~ee~~|||
|VSD<br>~~a~~<br>~~es~~<br>~~a~~|Diode Forward Voltage<br>~~a~~<br>~~es~~<br>~~rr~~|–––<br>~~res~~<br>~~rs~~|–––<br>~~rs~~<br>~~rs~~|1.3<br>~~rs~~<br>~~ee~~<br>~~rs~~|V<br>~~rs~~|TJ= 25°C,IS= 77A,VGS= 0V<br>~~rs~~|
|dv/dt<br>~~es~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~es ~~<br>~~rr~~|–––<br> ~~res ~~<br>~~rs~~|4.0<br> ~~rs ~~<br>~~rs~~|–––<br> ~~ee~~<br>~~rs~~|V/ns T|V/ns TJ= 175°C,IS=77A,VDS= 135V|
|trr<br>~~a~~<br>~~a~~<br>~~Pe~~|Reverse Recovery Time<br>~~rr ~~<br>~~a~~<br>|–––<br> ~~rs ~~<br>~~a~~|80<br> ~~rs ~~<br>~~a~~|–––<br> ~~rs~~<br>~~a~~|ns<br>~~a~~|TJ =25°CVDD= 115V<br>TJ =125°CIF= 77A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~a~~<br>~~ee~~|93<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|||
|Qrr<br>~~a~~<br>~~Pe fo~~<br>~~ee~~|Reverse Recovery Charge<br>~~a~~<br>~~fo~~<br>|–––<br>~~a~~<br>~~ee~~|270<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~|~~<br>||
|||–––<br>~~Ff~~<br>|360<br>~~ee~~<br>~~Ff~~<br>|–––<br>~~Ff~~<br>|||
|IRRM<br>~~Pe fo~~<br>~~ee~~|Reverse Recovery Current<br>~~fo~~<br>~~es~~|–––<br>~~Ff~~<br>~~es~~<br>~~es~~|6.0<br>~~ee~~<br>~~Ff~~<br>~~es~~|–––<br>~~Ff~~<br>~~es~~|A<br>~~|~~<br>~~es~~||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 4.5V 100 5.0V 4.5V<br>BOTTOM 4.0V sii BOTTOM 4.0V 4.0V<br>|<br>10 10<br>4.0V<br>60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 1<br>ffi i fe<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 3.5<br>I D  = 77A<br>3.0 VGS = 10V<br>100<br>ASO 2.5<br>TJ = 175 ° C TJ = 25°C<br>10 2.0<br>1.5<br>1 | /<br>Hf = EEE<br>VDS = 50V 1.0<br>60µs PULSE WIDTH<br>0.1 A 0.5 SetTTA<br>1 2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID = 77A<br>C rss    = C gd  12 VDS= 108V<br>L...] Coss   = Cds + Cgd 10 ER VDS= 68V E<br>10000 C iss VDS= 27V<br>ee ee ll Gh<br>8<br>iii Se C oss 6 aan An<br>Rul ff<br>1000<br>4<br>Crss<br>2<br>100 int 0 A<br>0.1 mune 1 10 100 = 0 RESEEE 40 80 120 160 200 240<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000<br>T J  = 175°C<br>100<br>T = 25 ° C<br>J<br>10<br>1<br>VGS = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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170<br>Id = 5.0mA<br>af<br>160<br>AI<br>150<br>Ha<br>ALL<br>140<br>ANT<br>130<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>——————_———_——<br>100µsec<br>1msec<br>100<br>OPERATION IN<br>10 THIS AREA<br>LIMITED BY RDS(on)<br>1 10msec<br>DC<br>0.1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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20<br>18 PLPRKYT<br>VGS = 4.5V<br>VGS = 5.5V<br>16 TATLT<br>VGS = 6.0V<br>VGS = 8.0V<br>14 || A VGS = 10V<br>12 aPanvZe<br>10 ALIAVa VE<br>8 7040000<br>Soa<br>6<br>ERR<br>4<br>0 40 80 120 160 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On–Resistance vs. Drain Current 

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## ~~TOR Rectifier~~ 

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1<br>D = 0.50<br>ER<br>0.1<br>eerSoap 0.20 TUM |<br>0.10<br>Cs<br>0.05<br>e alll 00 add<br>0.01<br>0.02<br>0.01<br>0.001<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>PB od nf oe<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000 ee<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>0.01<br>0.05<br>10 0.10 Za Rani ee<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>600 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1.0% Duty Cycle 1.Avalanche failures assumption:<br>500<br>ID = 77A Purely a thermal phenomenon and failure occurs at a<br>Ne temperature far in excess of Tjmax. This is validated for every<br>400 part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>   exceeded.<br>300 3. Equation below based on circuit and waveforms shown in Figures<br>NNT     23a, 23b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>200 LUNN EETE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>100 7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>PAREERASUEE     (assumed as 25°C in Figure 14, 15).<br>BERERREESSSS tav = Average time in avalanche.<br>0<br>D = Duty cycle in avalanche =  tav ·f<br>25 50 75 100 125 150 175 ZthJC(D, tav) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>Iav = 2T/ [1.3·BV·Zth]<br>Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav<br>6  www.irf.com © 2015 International Rectifier Submit Datasheet Feedback                 June 17, 2015<br>OT<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


IRF135B203/IRF135S203 

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4.0<br>3.5<br>ROT TT<br>3.0<br>PSSST<br>2.5<br>HELPSSSSRS<br>2.0<br>ft LE eS<br>1.5 I D  = 250µA ZZEENN<br>ID = 1.0mA AZAL_| NN<br>ID = 10mA<br>1.0 GEREAN<br>ID = 1.0A<br>0.5 PL EEL<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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40<br>IF = 54A<br>35 V R  = 115V<br>TTT.<br>T  = 25°C<br>30 J<br>TJ = 125°C<br>mapoee<br>25<br>20 PT<br>15 TT ery TT<br>an<br>10 TFT ELL<br>5 ATE PELL<br>0 PET EEL<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
40<br>IF = 77A<br>35 LLL,<br>VR = 115V<br>T = 25°C<br>30 J Banaue<br>TJ = 125°C<br>25 nee ae<br>20 PT<br>15<br>eer<br>10<br>Tar LLL<br>5 PET TT LLL<br>HEEEL  ELE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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1600<br>IF = 54A<br>1400 V R  = 115V TELL<br>T  = 25°C<br>1200 J HEEL<br>TJ = 125 ° C<br>1000 Banca<br>800 er<br>600<br>CCE Ere<br>400<br>eer TT<br>200 PFT TLL<br>0 EEL LL<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
1600<br>IF = 77A<br>1400 V R  = 115V TTT<br>1200 T J  = 25°C Bama<br>TJ = 125 ° C<br>1000<br>acen<br>800 inaEez<br>600 RET<br>400 Cee LT<br>200 cry TT [LLL]<br>HE EEE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback                 June 17, 2015 ~~=.~~ 

IRF135B203/IRF135S203 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>W V/ 2 \\- 0V TT<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>ep l e p i g pig<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRF135B203/IRF135S203 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

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**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRF135B203/IRF135S203 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY [|<br>LOT CODE WEEK 02<br>F UJ eU] LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S J e<br>LOGO IR —~ DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>Hl WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRF135B203/IRF135S203 ~~LLL~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [275 x 295] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


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IRF135B203/IRF135S203 ~~LLL~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRF135S203/power-mosfet-strongirfettm-n-channel-135-v-129-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf135s203/mosfet-n-ch-135v-129a-to-263/dp/2781106RL)
---

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