# Power MOSFET, N Channel, 135 V, 129 A, 6700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2709931/)

**URL**: https://novapart.co/products/IRF135B203/power-mosfet-n-channel-135-v-129-a-6700-ohm-to
**SKU**: IRF135B203
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1400
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:129A; Drain Source Voltage Vds:135V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 441W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 135V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 129A |
| Drain Source On State Resistance | 6700µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709931/)

International T&R Rectitier 

## Strong _IR_ FET™ IRF135B203 IRF135S203 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

HEXFET[® ] Power MOSFET 

**VDSS DSS 135V RDS(on) typ.DS(on) typ.typ. 6.7m**  **max 8.4m**  **ID (Silicon Limited) D (Silicon Limited) 129A** ~~=~~ 

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D VDSS DSS  135V<br>RDS(on) typ.DS(on) typ.typ. 6.7m <br>G<br>            max  8.4m <br>S ID (Silicon Limited) D (Silicon Limited)  129A<br>**----- End of picture text -----**<br>


- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant, Halogen-Free 

D S ~~e~~ D S G @ G TO-220AB D[2] -Pak IRF135B203 IRF135S203 

|||||**G**||**D**<br>**S**|
|---|---|---|---|---|---|---|
|||||Gate||Drain<br>Source|
||||||||
|||**Standard Pack**||**Standard Pack**|||
|**Base part number**|**Package Type**|**Form**||**Quantity**||**Orderable Part Number**|
|IRF135B201|TO-220|Tube||50||IRF135B203|
|IRF135S201|D2-Pak|Tape and Reel||800||IRF135S203|



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28<br>26 ID = 77A<br>24 sooo<br>22 SIPC<br>20 | Mt | | tt tt<br>18 |<br>16 TJ = 125°C<br>14 ARCEEPPRERPIN, | | [| [|<br>12<br>OE<br>10 Pitt| | | tf ft ft<br>8 TJ = 25°C<br>6 FREER EE<br>4 HEEL<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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140<br>120 es<br>~<br>100<br>PNN<br>PT Ke<br>8060 EAN<br>NI<br>ee<br>40<br>20<br>CCCoy<br>0 Ft | | tt<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On– Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRF135B203/IRF135S203 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C<br>Continuous Drain Current|Continuous Drain Current,VGS @10V|129|A|
|ID @TC= 100°C<br>Continuous Drain Current|Continuous Drain Current,VGS @10V|91||
|IDM<br>Pulsed Drain Current|Pulsed Drain Current|512||
|PD @TC= 25°C<br>Maximum Power Dissi|Maximum Power Dissipation|441|W|
|Linear Deratin|Linear DeratingFactor|2.9|W/°C|
|VGS<br>Gate-to-Source Volta|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG<br>Operating Junction and<br>Storage Temperature Range|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
|So|SolderingTemperature,for 10 seconds (1.6mm fromcase)|300||
|Mountin|MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||



## **Avalanche Characteristics** 

|EAS (Thermally limited)|SinglePulseAvalancheEnergy |595|mJ|
|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|870||
|IAR|Avalanche Current|See Fig 15, 15, 23a, 23b|A|
|EAR|Repetitive Avalanche Energy||mJ|



|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RJC|Junction-to-Case|–––|0.34|°C/W|
|RCS|Case-to-Sink,Flat Greased Surface|0.50|–––||
|RJA|Junction-to-Ambient|–––|62||
|RJA|Junction-to-Ambient(PCB Mount) |–––|40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

**Symbol Parameter Min. Typ. Max. Units Conditions** ~~esGO~~ V(BR)DSS Drain-to-Source Breakdown Voltage 135 ––– ––– V VGS = 0V, ID = 250µA ~~ree~~ ~~**G** G ee~~ V(BR)DSS/TJ  Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C Reference to 25°C, ID = 5mA  ~~ee~~ RDS(on) ~~es~~ Static Drain-to-Source On-Resistance ––– ~~Ge~~ 6.7 8.4 m VGS = 10V, ID = 77A ~~a~~ VGS(th) Gate Threshold Voltage ~~a~~ 2.0 ~~rsrs rrGs~~ ––– 4.0 ~~es~~ V VDS = VGS, ID = 250µA ––– ––– 20 VDS =135 V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ~~eePt~~ ––– ––– 250 ~~Po~~ VDS = 108V,VGS = 0V,TJ =125°C ~~en es ee~~ Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V ~~—————,_,—~~ IGSS Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V RG Gate Resistance ––– 2.1 ~~r~~ –––  ~~re~~ ~~**e** s ee Qeee Po~~ 

## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 200µH, RG = 50, IAS = 77A, VGS =10V. 

-  ISD  77A, di/dt  1700A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-     Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 41A, VGS =10V. 

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~~TER Rectifier~~ 

IRF135B203/IRF135S203 ~~LLL~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~i~~|**Parameter**<br>~~ee~~|**Min.**<br>~~rs~~|**Typ. **<br>~~ss~~|**Max. Units**<br>~~ss~~|**Max. Units**|**Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|gfs<br>~~i~~<br>~~es~~|Forward Transconductance<br>~~ee~~<br>|200<br>~~rs~~<br>~~es~~<br>|–––<br>~~ss~~<br>~~ee~~<br>|–––<br>~~ss~~<br>|S|VDS= 10V,ID= 77A|
|Qg<br>~~i~~<br>~~a~~<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~rs ~~<br>~~es~~<br>~~es~~<br><br>~~ee~~<br>|180<br> ~~ss~~<br>~~es~~<br>~~ee~~<br><br>~~es~~<br>|270<br>~~ss~~<br>~~es~~<br><br>|nC|ID= 77A<br>VDS= 68V<br>VGS= 10V|
|Qgs<br>~~es~~<br>~~ee~~<br>~~a~~|Gate-to-Source Charge<br>~~ee~~<br>|–––<br>~~es~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|43<br>~~ee~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>|||
|Qgd<br>~~es~~<br>~~ee~~<br>~~a~~|Gate-to-Drain Charge<br>~~ee~~<br>~~es~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|46<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|||
|Qsync<br>~~ee~~<br>~~aee~~|Total Gate Charge Sync.(Qg–Qgd)<br>|–––<br>~~ee ~~<br><br>~~ee~~|134<br> ~~es~~<br>|–––<br>|||
|td(on)<br>~~aee~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|18<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 81V<br>ID= 77A<br>RG= 2.7<br>VGS= 10V|
|tr<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br>|73<br>~~ee~~<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>|||
|td(off)<br>~~ee~~<br>~~es~~<br>~~es~~<br>~~a~~|Turn-Off DelayTime<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~ee~~<br>~~es~~<br>~~es~~<br><br>~~ee~~<br>|114<br>~~ee~~<br>~~es~~<br><br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br><br>|||
|tf<br>~~es~~<br>~~es~~<br>~~a~~<br>~~ee~~|Fall Time<br>~~es~~<br>~~ee~~<br><br>|–––<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|81<br>~~es~~<br>~~ee~~<br>~~es~~<br><br>|–––<br>~~es~~<br>~~ee~~<br><br>|||
|Ciss<br>~~es~~<br>~~a~~<br>~~ee~~|Input Capacitance<br><br>~~ee~~<br>|–––<br>~~es~~<br><br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|9700<br><br>~~es~~<br>~~ee~~<br>|–––<br><br>~~ee~~<br>|pF<br> ee|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|540<br> ~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>|–––<br>~~ee~~<br><br>~~ee~~|250<br><br>~~ee~~|–––<br><br>~~ee~~|||
|Coss eff.(ER)<br>~~a ee~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|520<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~||VGS= 0V, VDS = 0V to 108V|
|Coss eff.(TR)<br>~~a ee~~<br>~~PP~~|Output Capacitance(Time Related)<br>~~ee~~<br>~~PP~~|–––<br>~~ee~~<br>~~ee~~<br>~~PP~~|700<br>~~ee~~<br>~~ee ~~<br>~~PP~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~PP~~||VGS= 0V,VDS = 0V to 108V|
|**Diode Characteristics**<br>~~a~~<br>~~rs~~|||||||
|**Symbol**<br>~~a~~|**Parameter **<br>~~a~~|**Min.**|**Typ. **|**Max.**<br>~~rs~~|**Units**<br>~~rs~~|**Conditions**<br>~~rs~~|
|IS<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––|–––|129<br>~~rs~~|A<br>~~rs~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~rs~~|
|ISM<br>~~a~~<br>~~es~~|Pulsed Source Current<br>(BodyDiode)<br>~~a~~<br>~~es~~|–––<br>~~res~~|–––<br>~~rs~~|512<br>~~rs~~<br>~~ee~~|||
|VSD<br>~~a~~<br>~~es~~<br>~~a~~|Diode Forward Voltage<br>~~a~~<br>~~es~~<br>~~rr~~|–––<br>~~res~~<br>~~rs~~|–––<br>~~rs~~<br>~~rs~~|1.3<br>~~rs~~<br>~~ee~~<br>~~rs~~|V<br>~~rs~~|TJ= 25°C,IS= 77A,VGS= 0V<br>~~rs~~|
|dv/dt<br>~~es~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~es ~~<br>~~rr~~|–––<br> ~~res ~~<br>~~rs~~|4.0<br> ~~rs ~~<br>~~rs~~|–––<br> ~~ee~~<br>~~rs~~|V/ns T|V/ns TJ= 175°C,IS=77A,VDS= 135V|
|trr<br>~~a~~<br>~~a~~<br>~~Pe~~|Reverse Recovery Time<br>~~rr ~~<br>~~a~~<br>|–––<br> ~~rs ~~<br>~~a~~|80<br> ~~rs ~~<br>~~a~~|–––<br> ~~rs~~<br>~~a~~|ns<br>~~a~~|TJ =25°CVDD= 115V<br>TJ =125°CIF= 77A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~a~~<br>~~ee~~|93<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|||
|Qrr<br>~~a~~<br>~~Pe fo~~<br>~~ee~~|Reverse Recovery Charge<br>~~a~~<br>~~fo~~<br>|–––<br>~~a~~<br>~~ee~~|270<br>~~a~~<br>~~ee~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|nC<br>~~a~~<br>~~|~~<br>||
|||–––<br>~~Ff~~<br>|360<br>~~ee~~<br>~~Ff~~<br>|–––<br>~~Ff~~<br>|||
|IRRM<br>~~Pe fo~~<br>~~ee~~|Reverse Recovery Current<br>~~fo~~<br>~~es~~|–––<br>~~Ff~~<br>~~es~~<br>~~es~~|6.0<br>~~ee~~<br>~~Ff~~<br>~~es~~|–––<br>~~Ff~~<br>~~es~~|A<br>~~|~~<br>~~es~~||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 4.5V 100 5.0V 4.5V<br>BOTTOM 4.0V sii BOTTOM 4.0V 4.0V<br>|<br>10 10<br>4.0V<br>60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 1<br>ffi i fe<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 3.5<br>I D  = 77A<br>3.0 VGS = 10V<br>100<br>ASO 2.5<br>TJ = 175 ° C TJ = 25°C<br>10 2.0<br>1.5<br>1 | /<br>Hf = EEE<br>VDS = 50V 1.0<br>60µs PULSE WIDTH<br>0.1 A 0.5 SetTTA<br>1 2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED ID = 77A<br>C rss    = C gd  12 VDS= 108V<br>L...] Coss   = Cds + Cgd 10 ER VDS= 68V E<br>10000 C iss VDS= 27V<br>ee ee ll Gh<br>8<br>iii Se C oss 6 aan An<br>Rul ff<br>1000<br>4<br>Crss<br>2<br>100 int 0 A<br>0.1 mune 1 10 100 = 0 RESEEE 40 80 120 160 200 240<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000<br>T J  = 175°C<br>100<br>T = 25 ° C<br>J<br>10<br>1<br>VGS = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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170<br>Id = 5.0mA<br>af<br>160<br>AI<br>150<br>Ha<br>ALL<br>140<br>ANT<br>130<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>——————_———_——<br>100µsec<br>1msec<br>100<br>OPERATION IN<br>10 THIS AREA<br>LIMITED BY RDS(on)<br>1 10msec<br>DC<br>0.1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Maximum Safe Operating Area 

**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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20<br>18 PLPRKYT<br>VGS = 4.5V<br>VGS = 5.5V<br>16 TATLT<br>VGS = 6.0V<br>VGS = 8.0V<br>14 || A VGS = 10V<br>12 aPanvZe<br>10 ALIAVa VE<br>8 7040000<br>Soa<br>6<br>ERR<br>4<br>0 40 80 120 160 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On–Resistance vs. Drain Current 

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IRF135B203/IRF135S203 ~~LLL~~ 

## ~~TOR Rectifier~~ 

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1<br>D = 0.50<br>ER<br>0.1<br>eerSoap 0.20 TUM |<br>0.10<br>Cs<br>0.05<br>e alll 00 add<br>0.01<br>0.02<br>0.01<br>0.001<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>PB od nf oe<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000 ee<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100<br>0.01<br>0.05<br>10 0.10 Za Rani ee<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>600 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1.0% Duty Cycle 1.Avalanche failures assumption:<br>500<br>ID = 77A Purely a thermal phenomenon and failure occurs at a<br>Ne temperature far in excess of Tjmax. This is validated for every<br>400 part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>   exceeded.<br>300 3. Equation below based on circuit and waveforms shown in Figures<br>NNT     23a, 23b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>200 LUNN EETE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>100 7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>PAREERASUEE     (assumed as 25°C in Figure 14, 15).<br>BERERREESSSS tav = Average time in avalanche.<br>0<br>D = Duty cycle in avalanche =  tav ·f<br>25 50 75 100 125 150 175 ZthJC(D, tav) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>Iav = 2T/ [1.3·BV·Zth]<br>Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav<br>6  www.irf.com © 2015 International Rectifier Submit Datasheet Feedback                 June 17, 2015<br>OT<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


IRF135B203/IRF135S203 

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4.0<br>3.5<br>ROT TT<br>3.0<br>PSSST<br>2.5<br>HELPSSSSRS<br>2.0<br>ft LE eS<br>1.5 I D  = 250µA ZZEENN<br>ID = 1.0mA AZAL_| NN<br>ID = 10mA<br>1.0 GEREAN<br>ID = 1.0A<br>0.5 PL EEL<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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40<br>IF = 54A<br>35 V R  = 115V<br>TTT.<br>T  = 25°C<br>30 J<br>TJ = 125°C<br>mapoee<br>25<br>20 PT<br>15 TT ery TT<br>an<br>10 TFT ELL<br>5 ATE PELL<br>0 PET EEL<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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40<br>IF = 77A<br>35 LLL,<br>VR = 115V<br>T = 25°C<br>30 J Banaue<br>TJ = 125°C<br>25 nee ae<br>20 PT<br>15<br>eer<br>10<br>Tar LLL<br>5 PET TT LLL<br>HEEEL  ELE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


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1600<br>IF = 54A<br>1400 V R  = 115V TELL<br>T  = 25°C<br>1200 J HEEL<br>TJ = 125 ° C<br>1000 Banca<br>800 er<br>600<br>CCE Ere<br>400<br>eer TT<br>200 PFT TLL<br>0 EEL LL<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
1600<br>IF = 77A<br>1400 V R  = 115V TTT<br>1200 T J  = 25°C Bama<br>TJ = 125 ° C<br>1000<br>acen<br>800 inaEez<br>600 RET<br>400 Cee LT<br>200 cry TT [LLL]<br>HE EEE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRF135B203/IRF135S203 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>W V/ 2 \\- 0V TT<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>ep l e p i g pig<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRF135B203/IRF135S203 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

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**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRF135B203/IRF135S203 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY [|<br>LOT CODE WEEK 02<br>F UJ eU] LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S J e<br>LOGO IR —~ DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>Hl WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [275 x 295] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


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IRF135B203/IRF135S203 ~~LLL~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF135B203/power-mosfet-n-channel-135-v-129-a-6700-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irf135b203/mosfet-n-ch-135v-129a-to-220ab/dp/2709931)
---

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