# Power MOSFET, N Channel, 40 V, 100 A, 9000 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3155125/)

**URL**: https://novapart.co/products/IRF1104PBF/power-mosfet-n-channel-40-v-100-a-9000-ohm-to
**SKU**: IRF1104PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5920
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.009ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155125/)

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 40V<br>R  = 0.009Ω<br>DS(on)<br>G<br>ID = 100A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


|a<br>~~es~~<br>~~es ee~~|**Parameter**<br>~~ee~~|**Max.**<br>)<br>~~ee~~|**Max.**<br>)<br>~~ee~~|**Units**<br>~~ee~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~es~~<br>~~es ee~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|100<br>)<br>~~ee~~||A<br>~~ee~~|
|ID@ TC= 100°C<br>~~es~~<br>~~es ee~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|71<br>)<br>~~ee~~|||
|IDM<br>~~es ee~~<br>~~ee~~|Pulsed Drain Current<br>~~ee~~<br>~~ee~~|400<br>~~ee~~|||
|PD@TC= 25°C<br>~~es ee~~<br>~~a~~<br>~~ee~~|Power Dissipation<br>~~ee~~<br>~~ee ee~~|170<br>~~ee~~<br>~~ee~~||W<br>~~ee~~|
|~~ee~~|Linear DeratingFactor<br>~~ee ee~~|1.11<br>~~ee~~||W/°C|
|VGS<br>~~ee~~|Gate-to-Source Voltage<br>~~ee ee~~<br>~~a~~|± 20<br>~~ee~~<br>~~a~~||V<br>~~a~~|
|EAS<br>~~ee~~<br>~~a~~<br>~~Se~~|Single Pulse Avalanche Energy<br>~~ee ee~~<br>~~ee”ene~~|350<br>~~ee~~<br>~~nnnEnnEnEnEEE~~||mJ<br>~~EEE~~|
|IAR<br>~~Se~~|Avalanche Current<br>~~ee”ene~~|60<br>~~nnnEnnEnEnEEE~~||A<br>~~EEE~~|
|EAR<br>~~Se~~<br>~~nn~~|Repetitive Avalanche Energy<br>~~ee”ene~~<br>~~©~~|17<br>~~nnnEnnEnEnEEE~~<br>~~©~~||mJ<br>~~EEE~~<br>~~©~~|
|dv/dt<br>~~Se~~<br>~~nn~~|Peak Diode Recoverydv/dt<br>~~ee” ene~~<br>~~©~~<br>~~ee~~|5.0<br>~~nnnEnnEnEnEEE~~<br>~~©~~<br>~~ee~~||V/ns<br>~~EEE~~<br>~~©~~<br>~~ee~~|
|TJ<br>TSTG<br>~~nn~~|Operating Junction and<br>Storage Temperature Range<br>~~©~~|-55  to + 175<br>~~©~~||°C<br>~~©~~|
|~~nn~~<br>~~es~~|SolderingTemperature, for 10 seconds<br>~~©~~|300(1.6mm from case)<br>~~©~~|||
|~~es~~|Mounting torque, 6-32 or M3 srew|10 lbf•in (1.1N•m)|||
|**Thermal Resistance**<br>~~es~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|0.90|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

02/02/04 

|||~~ee~~|~~es~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>~~ee~~<br>~~ee~~|**Typ. **<br>ee<br>~~es~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~<br>~~es~~|40<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|0.038<br>~~ee~~|–––<br>~~ee~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|–––|0.009|Ω|VGS= 10V, ID= 60A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~|2.0<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs|Forward Transconductance<br>~~ee~~|37<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|S<br>~~ee~~|VDS= 25V, ID= 60A|
|IDSS|Drain-to-Source Leakage Current<br>~~Ee~~<br>~~—————~~<br>~~**e**e~~|–––<br>~~ee~~<br>~~Ee~~|–––<br>~~Ee~~|25<br>~~Ee~~|µA<br>~~Ee~~<br>~~—————~~<br>|VDS= 40V, VGS= 0V|
|||–––<br>~~Ee~~<br>~~—————~~<br>|–––<br>~~Ee~~<br>~~—————~~<br>|250<br>~~Ee~~<br>~~—————~~<br>||VDS= 32V, VGS= 0V, TJ= 150°C<br>~~—————~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~—————~~<br>~~**e**e~~|–––<br>~~—————~~<br><br>~~ee~~|–––<br>~~—————~~<br>|100<br>~~—————~~<br>|nA<br>~~—————~~<br>~~e~~|VGS= 20V<br>~~—————~~|
||Gate-to-Source Reverse Leakage<br>~~—————~~<br>~~**e**ee~~|–––<br>~~—————~~<br>~~e~~<br>~~ee~~|–––<br>~~—————~~<br>~~e~~|-100<br>~~—————~~<br>~~e~~||VGS= -20V<br>~~—————~~|
|Qg|Total Gate Charge<br>~~—————~~<br>~~**e**e~~<br>~~ee~~|–––<br>~~—————~~<br><br>~~ee~~<br>~~ee~~|–––<br>~~—————~~<br><br>~~ee~~|93<br>~~—————~~<br><br>~~ee~~|nC<br>~~—————~~<br><br>~~ee~~<br>|ID= 60A<br>VDS= 32V<br>VGS= 10V, See Fig. 6 and 13<br>~~—————~~<br>~~®~~|
|Qgs<br>a<br>~~Se~~|Gate-to-Source Charge|–––|–––|29|||
|Qgd<br>~~Se~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>|–––<br>ee<br>|–––<br>|30<br>|||
|td(on)<br>~~Se~~<br>~~es~~|Turn-On Delay Time<br>~~Rs~~<br>|–––<br>~~Rs~~<br>ee<br>|15<br>~~Rs~~<br>|–––<br>~~Rs~~<br>|~~Rs~~<br>~~**ee**~~|VDD= 20V<br>ID= 60A<br>RG= 3.6Ω<br>RD= 0.33Ω, See Fig. 10<br>~~®~~<br>~~C)~~|
|tr<br>~~Se~~<br>~~es~~<br>ee|Rise Time<br>~~**ee**~~<br>|–––<br>ee<br>~~**ee**~~|114<br>~~**ee**~~|–––<br>~~**ee**~~|||
|td(off)<br>~~es~~<br>ee|Turn-Off Delay Time<br>~~**ee**~~<br>~~ee~~|–––<br>ee<br>~~**ee**~~|28<br>~~**ee**~~|–––<br>~~**ee**~~|||
|tf<br><br>ee|Fall Time<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~|19<br>~~**ee**~~|–––<br>~~**ee**~~|||
|<meta|~~ee~~<br><meta<br>~~|e~~|–––<br>~~|e~~|~~|e~~|–––<br>~~|e~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~C)~~<br>~~&~~|
|LS<br><meta<br>~~ee~~|Internal Source Inductance<br><meta<br>~~|e~~<br>~~ee~~|–––<br>~~|e~~<br>~~ee~~|~~|e~~<br>~~ee~~|–––<br>~~|e~~ <br>~~ee~~|nH||
|Ciss<br>~~ee~~|Input Capacitance<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|2900<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|pF<br>~~es~~<br>~~es~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~es~~|Output Capacitance<br>~~es~~|–––<br>~~es~~|1100<br>~~es~~|–––<br>~~es~~|||
|Crss<br>a~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|250<br>~~ee~~|–––<br>~~ee~~|||



@ Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

Starting TJ = 25°C, L = 194µH 2) RG = 25Ω, IAS = 60A. (See Figure 12) fe) ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

© Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 

www.irf.com 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V | Zope lp<br>BOTTOM 4.5V<br> 100<br> 10 ZA ee<br>4.5V<br>20µs PULSE WIDTH<br> 1 STOTTimal T  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 1000 Pf f<br> 100 Saee>>—.0nne T  = 175  CJ °<br>ep FA ttee<br>ee<br> 10<br>ZA T Tt y<br>T  = 25  CJ °<br>Wa a ee ee eee<br> 1<br>————————<br>———— V      = 50VDS<br>0.1 FEE 20µs PULSE WIDTH |<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V HH<br>BOTTOM 4.5V<br> 100<br>4.5V<br> 10 DW As aaniitiaaillll<br>20µs PULSE WIDTH<br>TLT HI T  = 175J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 100A<br>L TT<br>2.0<br>CETTE<br>EHa<br>1.5 aia<br>HEUTE eet TTT<br>1.0<br>PEACE<br>0.5 LLLLT |<br>TTT<br>T E VGS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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5000 20<br>VGS = 0V, f = 1MHz ID = 60A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 32V<br>Crss = Cgd VDS = 20V<br>4000 Coss = Cds + Cgd<br>tT) Eo<br>15<br>Too py<br>3000 Ciss<br>NST es VA<br>10<br>IN<br>2000 P SU R -- 4<br>Coss<br>5<br>1000 po} ed AT<br>pt ETH Rill ST TTT<br>Crss FOR TEST CIRCUIT<br>0 Th,a e Sese 0 Yi/t if SEE FIGURE       13<br> 1  10  100 0 25 50 75 100<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100 a ° e  1000 eee<br>T  = 175  CJ<br>10us<br> 10  100<br>f f Eaceaia0ilinasemm 100us anal<br>1ms<br> 1 T  = 25  CJ °  10<br>So P s 10ms<br> T TCJ = 25  C= 175  C° °<br>V      = 0 V GS  Single Pulse<br>0.1 Pei gt [| [| | |  1 a el<br>0.2 0.8 1.4 2.0 2.6  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>SLL Re ] -<br>60<br>PEEEERNS EEE i<br>SERN mice with ≤ 1  ys<br>≤ 0.1 %<br>40 PitPL ETETt EELELL_ENETN£1 Fig 10a.   Switching Time Test Circuit Duy Factor :<br>EERE<br>20 VDS<br>90%<br>PTET ETT yyy )<br>0 Pi tt ELE EEL | iE |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 eTSS eee ee eeeeee eeee<br>D = 0.50<br>P T eG fe<br>T E<br>0.20<br>0.1 SeR 0.10 RRSer alllA TNT| OAT<br>a 0.05 9 9 PDM<br>0.02 7 SINGLE PULSE ee t1<br>0.01 (THERMAL RESPONSE) t2<br>e e Teeaee<br>Notes:<br>1. Duty factor D = t   / t1 2<br>tc 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V :<br>tp 0.01Ω<br>_*<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br><— tp —><br>/<br>y |<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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fc QG<br>iy P o<br>bee QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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800<br>ID<br>KP TOP 24A<br>42A<br>BOTTOM 60A<br>A<br>600 PNt t<br>400<br>NAG Pf<br>SOACETE<br>200<br>PANNBEER OT |<br>Pt tT S S NNEEEESS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>LL ii | +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO =<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| dar_ 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X AIP [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M = 2.92 (.115)<br>2.64 (.104)<br>(__—_} 2.54 (.100) || T<br>2X<br>NOTES:<br>**----- End of picture text -----**<br>


1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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