# Power MOSFET, N Channel, 60 V, 79 A, 7100 µohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1602223/)

**URL**: https://novapart.co/products/IRF1018EPBF/power-mosfet-n-channel-60-v-79-a-7100-ohm-to-220
**SKU**: IRF1018EPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4790
**Stock**: 1000+
**Lead Time**: 253 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0071ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 79A |
| Drain Source On State Resistance | 7100µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1602223/)

## PD IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS 

Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

HEXFET ® Power MOSFET D **VDSS 60V** ~~ee ee~~ **RDS(on)   typ. 7.1m** G **max. 8.4m** ~~Pe~~ S **ID 79A** ~~ee ee~~ 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability 

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D<br>D<br>D<br>D S D S D S<br>G G G<br>TO-220AB D [2] Pak TO-262<br>IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>A<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>110<br>0.76<br>**Max.**<br>79<br>56<br>315<br>~~OTooo~~<br>~~MM KX~~<br>~~a~~<br>~~aes~~<br>~~©~~<br>~~es~~<br>~~a OO~~|
|---|
|VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>21<br>± 20<br>~~a OO~~<br>~~aeSeOO~~|
|TJ<br>Operating Junction and<br>°C<br>-55  to + 175|
|TSTG<br>Storage Temperature Range|
|Soldering Temperature, for 10 seconds<br>300|
|(1.6mm from case)|
|Mountingtorque,6-32 or M3 screw<br>10lb in(1.1N m)<br>~~a SO~~|
|**Avalanche Characteristics**|
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>88<br>~~a GO~~|
|IAR<br>Avalanche Current<br>A<br>47<br>~~a GO~~|
|EAR<br>Repetitive Avalanche Energy<br>mJ<br>11<br>~~a GO~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>1.32<br>RθCS<br>Case-to-Sink,Flat Greased Surface,TO-220<br>0.50<br>–––<br>RθJA<br>Junction-to-Ambient,TO-220<br>–––<br>62<br>°C/W<br>~~esGO~~<br>~~(~~<br>~~es~~<br>~~©Sn~~<br>~~ns~~<br>~~Pe~~|
|RθJA<br>Junction-to-Ambient(PCB Mount) ,D2Pak<br>–––<br>40<br>~~Pw~~|
|www.irf.com<br>1|



2/28/08 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>60<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.073<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>7.1<br>8.4<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= 20V<br>VGS= -20V<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>VGS= 10V,ID= 47A<br>VDS= VGS,ID= 100μA<br>VDS= 60V,VGS= 0V<br>VDS= 48V,VGS= 0V,TJ= 125°C<br>~~a~~<br>~~sD~~<br>~~COD GO QO~~<br>~~a rn~~<br>~~GD UDQOD QODQO~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~rn GD RD QO~~<br>~~QODQO~~<br>~~a~~<br>~~Ft~~<br>~~_———————————_—————E~~<br>~~Po~~|
|---|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>110<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>46<br>69<br>nC<br>**Conditions**<br>VDS= 50V,ID= 47A<br>ID= 47A<br>~~a Ds~~<br>~~QD QDGOsGO~~<br>~~a rn~~<br>~~GD UDQODQODQO~~<br>~~a i~~|
|Qgs<br>Gate-to-Source Charge<br>–––<br>10<br>–––<br>VDS= 30V<br>~~a~~<br>~~i~~|
|Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>VGS= 10V<br>~~a~~<br>~~i~~<br>~~@~~|
|Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>34<br>–––<br>RG(int)<br>Internal Gate Resistance<br>–––<br>0.73<br>–––<br>Ω<br>td(on)<br>Turn-On DelayTime<br>–––<br>13<br>–––<br>ns<br>VDD= 39V<br>ID= 47A,VDS=0V,VGS= 10V<br>~~a i~~<br>~~Po~~<br>~~a en~~<br>~~QDQDQODQO~~<br>~~a i~~|
|tr<br>Rise Time<br>–––<br>35<br>–––<br>ID= 47A<br>~~a~~<br>~~i~~|
|td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>RG= 10Ω<br>~~a~~<br>~~i~~|
|tf<br>Fall Time<br>–––<br>46<br>–––<br>VGS= 10V<br>~~a~~<br>~~i~~<br>~~@~~|
|Ciss<br>Input Capacitance<br>–––<br>2290<br>–––<br>VGS= 0V<br>~~a~~<br>~~i~~|
|Coss<br>Output Capacitance<br>–––<br>270<br>–––<br>VDS= 50V<br>~~a~~<br>~~i~~|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>pF<br>Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>390<br>–––<br>Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>630<br>–––<br>ƒ= 1.0MHz<br>VGS= 0V,VDS= 0V to 60V<br>VGS= 0V,VDS= 0V to 60V<br>~~a~~<br>~~i~~<br>~~ee>~~<br>~~eeee~~|
|**Diode Characteristics**|
|D<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>79<br>A<br>MOSFET symbol<br>**Conditions**<br>~~a DD~~<br>~~IDQOD GODQO~~|
|(Body Diode)<br>showing  the|
|G<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>315<br>integral reverse|
|S<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>–––<br>26<br>39<br>ns<br>TJ= 25°C<br>VR= 51V,<br>–––<br>31<br>47<br>TJ= 125°C<br>IF= 47A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>24<br>36<br>nC<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>35<br>53<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>1.8<br>–––<br>A<br>TJ= 25°C<br>TJ= 25°C,IS= 47A,VGS= 0V<br>p-n junction diode.<br>~~eees~~<br>~~Pt~~<br>~~es~~<br>~~Pt~~<br>~~a~~|
|ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~|



Notes: ~~®©~~ Repetitive rating;  pulse width limited by max. junction Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. as Coss while VDS is rising from 0 to 80% VDSS. @ Limited by TJmax, starting TJ = 25°C, L = 0.08mH © Coss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as 

Coss eff. (ER) is a fixed capacitance that gives the same energy as 

RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for use above this value. 

Coss while VDS is rising from 0 to 80% VDSS. 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. 

ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400μs; duty cycle ≤ 2%. 

This is only applied to TO-220 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>ee ae 6.0V 6.0V Sra Senie<br>5.5V 5.5V<br>5.0V 5.0V<br>100 4.8V 100 4.8V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 4.5V 10<br>Z an =a PA N<br>eS PE ee oe P eeeoe<br>≤60μs PULSE WIDTH ≤60μs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>ETH Pe<br>1 DL  LIL 1 E THa | LIU<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.5<br>ID = 47A<br>VGS = 10V<br>100 2.0<br>TJ = 175°C | |ft]<br>THe)SR « =oTTT ry<br>aay [Aen] Th<br>10 1.5<br>| AT Tt HLL<br>ee ee) TJ  re = 25°C ee ee ee B<br>1 1.0<br>a ee VDS  ee = 25V 4<br>≤60μs PULSE WIDTH<br>0.1 Ag ft 0.5 ATELLELELLL<br>2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100120140160180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>4000<br>VGS   = 0V,       f = 1 MHZ 16<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= 47AD= 47A= 47A<br>3000 [ CCrss   oss    = C= C ds  gd + C gd | 12 pT VVDSDS= 48V= 30VVDSDS= 48V= 30VDSDS= 48V= 30VDS= 48V= 30V= 48V= 30V= 30V<br>Ciss VDS= 12VDS= 12V= 12V<br>anit Wr<br>2000 Tui | | A<br>N 8 Wj<br>1000 Coss 4<br>Crss<br>e e eel e nedYALAYALA<br>0 0<br>1 10 100 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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16<br>ID= 47AD= 47A= 47A<br>12 pT VVDSDS= 48V= 30VVDSDS= 48V= 30VDSDS= 48V= 30VDS= 48V= 30V= 48V= 30V= 30V<br>VDS= 12VDS= 12V= 12V<br>Wr<br>| | A<br>8 Wj<br>4<br>nedYALAYALA<br>0<br>0 10 20 30 40 50 60<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 —<br>————|<br>100<br>T = 175°C<br>J<br>a aT<br>10<br>TJ = 25°C<br>1 aerey ee e —<br> se ee<br>ee ee<br>VGS = 0V<br>es<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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80<br>60 SO<br>PLANE EEE<br>40<br>FEELERS<br>20 ELEN<br>0 EEE<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

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0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>===) LIMITED BY R ne: DS(on)<br>SE<br>1000<br>oo t H<br>100 SesPot28 eear 1m e s i ec angars ESET itti!t<br>1 00 μsec<br>10<br>eS SSt<br>10 ms ec<br>SSS a<br>1 PEE”<br>Tc = 25°C<br>Tj = 175°C eee ee s e ee<br>Single Pulse DC<br>0.1 iii aiiSacee<br>0.1 1 10 100<br>VDS,  Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>80<br>Id = 5mA<br>TLE<br>75 /<br>70<br>ae<br>LAAT<br>65 WMLLLELELEL<br>60<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

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400<br>350 Ffot                  ITOP         5.3AD<br>               11A<br>Na<br>300 BOTTOM   47A<br>250 NE |<br>RN<br>200<br>150<br>NIN|<br>100 NINE<br>50<br>Ne<br>0 | ot |SS<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent 

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T@R Rectifier<br>10<br>FEET<br>0<br>PT ET ee<br>1 Oe|<br>D = 0.50<br>CE ee eeers<br>ee 0.20 aSe — kt e e ee ee<br>0.1 0.10 Co R1 R1 R2 R2 R3 R3 R4 R4 eee Ri (°C/W) τι (sec)<br>0.050.02 τJ τJτ1 τ1 τ2 τ2 τ3τ3 τ4τ4 τCτ 0.0267410.6066850.28078 0.0000070.0008430.000091<br>0.01<br>0.01 = ee Alin en ee ee ee Ci=  ANON Ci τi/Ri i/Ri _~ Pp a 0.406128 0.005884 |<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>ry<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>er al 7 pulsewidth, tav, assuming  ΔTj = 150°C and<br>Tstart =25°C (Single Pulse)<br>ee 0.01 PE<br>BHI! I<br>10<br>0.05<br>0.10<br>SE en el ee<br>FT 77 ann et—~ ee<br>1 PE Allowed avalanche Current vs avalanche  ETTTIPSSseTZFEI ETT<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>FI<br>- cAI<br>0.1 LTA ETE<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs.Pulsewidth 

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100<br>TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>80 I D  = 47A<br>60<br>NIN; EEE<br>HI NINIEEEE<br>40 PLENIATE EE E<br>ENN<br>20<br>ET NONG<br>0 PE te EEL [LAAN] ANQNE<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5 14<br>4.0 IIID  D D = 250μA== 1.0A 1.0mA 12 IF = 32A V R  = 51V<br>3.5 I D  = 100μA 10 T TJ = 25°CJ = 125°C<br>3.0 EERE = 8 | Pe<br>TASS PEN mwa<br>2.5 6<br>|] ISSN P| ee<br>2.0 iit TUSNNDN 4 ean<br>1.5 2<br>1.0 HAS BEE<br>0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>0 200 400 600 800 1000<br>TJ , Temperature ( °C )<br>diF /dt (A/μs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage vs. Temperature<br>14 320<br>IF = 47A IF = 32A<br>12 V R  = 51V ee 280 VR = 51V Pt ty<br>TJ = 25°C 240 T J  = 25°C<br>10 T J = 125°C | | et TJ = 125°C ay<br>200<br>8<br>at {eS<br>160<br>6<br>ee 120 i<br>an SAS<br>4<br>80<br>a fe<br>2 ae 40 ||<br>0 0<br>po} |tT || PoeTTtT<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/μs) diF /dt (A/μs)<br>IRR (A)<br>IRR (A) QRR (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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320<br>IF = 47A<br>280<br>| |<br>VR = 51V<br>240 T J  = 25°C is<br>TJ = 125°C<br>ee,<br>200<br>160<br>| A<br>120<br>pot ft AZ |<br>ae<br>80<br>40<br>pap ||<br>oT<br>0<br>tT |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (A)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+$—_—_— P.W. Period —_— — D = — Period<br>) [©)]    •  Circuit Layout Considerations lt V | GS « =10V<br>| | -  •   LowGround StrayPlane Inductance<br> •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [L] Current Transformer - ® + Current r Current di/dt AN<br>00 ® D.U.T. VDS Waveform Diode Recovery =<br>dv/dt<br>© . ‘ VDD<br>ma<br>•   Re-Applied<br>Re ) •   dv/dtDriver controlledsame type byas RgD.U.T. Vpp** + Voltage Body Diode  Forward Drop<br>•   - Inductor Curent<br>•<br>D.U.T. - Device Under Test es<br>(7) Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>* Use P-Channel Driver for P-Channel Measurements *** \15 = 5V for Logic Level Devices<br>** Reverse Polarity for P-Channel<br>Fig 21.  Diode Reverse Recovery Test Circuit for HEXFET ®  Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01Ω IAS<br>Fig 22a.   Unclamped Inductive Test Circuit Fig 22b.   Unclamped Inductive Waveforms<br>V<br>Vos OTNRp DS<br>90%<br>v D.UT. | |<br>-<br>Vop 10% |<br>V<br>GS<br>Pulse Width ≤ 1  us ‘ “4# — _ P o<br>Duty Factor ≤ 0.1 % td(on) tr td(off) tf<br>Fig 23a.   Switching Time Test Circuit Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K S Vgs(th)<br>S k: Qgodr Qgd Qgs2 . Qgs1<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

**Fig 24a.** Gate Charge Test Circuit 

www.irf.com 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER a<br>oN RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 0190 we<br>DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

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## TO-262 Package Outline (Dimensions are shown in millimeters (inches)) 

## TO-262 Part Marking Information 

**==> picture [306 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL oS a<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>YEAR 7 =  1997<br>Note: “P” in assembly line position ASSEMBLY<br>indicates "Lead —- Free” LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER . RL3I03L<br>LOGO TEAR P71 9A py<br>DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## (Dimensions are shown in millimeters (inches)) 

**==> picture [345 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL a<br>(in pe<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TEaR 0021 ny<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY « “TO<br>LOT CODE Tent, WEEK 02<br>U U<br>LINE L<br>**----- End of picture text -----**<br>


EXAMPLE: THIS IS AN IRF530S WITH For  GB ProductionLOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" 

**==> picture [199 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL ee<br>RECTIFIER F530S<br>LOGO  ™<br>IOR<br>XXXX XXXX po<br>DATE CODE<br>LOT CODE ~— Tuy<br>**----- End of picture text -----**<br>


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**==> picture [18 x 7] intentionally omitted <==**

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TRR<br>**----- End of picture text -----**<br>


**==> picture [393 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>/ \ \ / \<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 2/08 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1018EPBF/power-mosfet-n-channel-60-v-79-a-7100-ohm-to-220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf1018epbf/mosfet-n-to-220/dp/1602223)
---

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