# Power MOSFET, N Channel, 55 V, 75 A, 7500 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2781105/)

**URL**: https://novapart.co/products/IRF1010ZSTRLPBF/power-mosfet-n-channel-55-v-75-a-7500-ohm-to-263
**SKU**: IRF1010ZSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8960
**Stock**: 200+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 7500µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781105/)

## PD - 95361A 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 7.5m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF 

## **Absolute Maximum Ratings** 

||**Parameter**<br>~~——_——————~~|**Max.**<br>~~——_——————~~|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~<br>~~——_——————~~|94<br>~~a~~<br>~~——_——————~~|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~——_——————~~|66<br>~~a~~<br>~~——_——————~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~a~~<br>~~——_——————~~|75<br>~~a~~<br>~~——_——————~~||
|IDM|Pulsed Drain Current<br>~~——_——————~~|360<br>~~——_——————~~||
|PD@TC= 25°C<br>~~Le~~|Power Dissipation<br>~~——_——————~~<br>~~a~~<br>~~Le~~|140<br>~~——_——————~~<br>~~a~~<br>|W<br>~~a~~<br>|
|~~Le~~|Linear Derating Factor<br>~~Le~~|0.90<br>|W/°C<br>|
|VGS<br>~~Le~~<br>~~ee~~|Gate-to-Source Voltage<br>~~Le~~~~**a**~~<br>~~ee~~|± 20<br>~~**a**~~|V<br>~~**a**~~|
|EAS (Thermally limited)<br><br>~~ee~~|Single Pulse Avalanche Energy<br>~~**a**~~<br>~~ee~~|130<br>~~**a**~~|mJ<br>~~**a**~~|
|EAS(Tested )<br>~~ee~~|Single Pulse Avalanche Energy Tested Value<br>~~ee~~|180||
|IAR<br>~~ee~~|Avalanche Current<br>~~eea~~<br>~~eo~~|See Fig.12a, 12b, 15, 16<br>~~eo~~<br>~~po~~|A<br>~~eo~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~eo~~<br>~~po~~||mJ<br>~~eo~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~eo~~<br>~~po~~|-55  to + 175<br>~~eo~~<br>~~po~~|°C<br>~~eo~~<br>~~po~~<br>~~TT~~|
|~~po~~<br>~~(oro~~|Soldering Temperature, for 10 seconds<br>~~po~~<br>~~(oro~~|300 (1.6mm from case )<br>~~po~~<br>~~TT~~||
|~~po~~<br>~~(oro~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~(oro~~|10 lbf in (1.1N m)<br>~~po~~<br>~~TT~~|~~po~~<br>~~TT~~|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|55<br>~~Gs~~|–––<br>~~rs~~|–––<br>~~rs~~|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Rn~~|–––<br>~~Rn~~<br>~~Gs~~<br>~~Gs~~|0.049<br>~~Rn~~<br>~~rs~~<br>~~nn~~|–––<br>~~Rn~~<br>~~rs~~|V/°C<br>~~Rn~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~Rn~~<br>~~GO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~en~~|–––<br>~~Gs~~<br>~~en~~<br>~~Gs~~|5.8<br>~~rs~~<br>~~en~~<br>~~nn~~|7.5<br>~~rs~~<br>~~en~~|mΩ<br>~~en~~<br>~~GO~~|VGS= 10V, ID= 75A<br>~~en~~<br>~~GO~~|
|VGS(th)|Gate Threshold Voltage<br>~~GO~~|2.0<br>~~Gs ~~<br>~~GO~~|–––<br> ~~nn~~<br>~~GO~~|4.0|V<br>~~GO~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~GO~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~GO~~|33<br>~~GO~~<br>~~|~~|–––<br>~~GO~~<br>~~|~~|–––|S<br>~~QO~~|VDS= 25V, ID= 75A<br>~~QO~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Pe~~<br>~~|~~|–––<br>~~|~~<br>~~Pe~~|–––<br>~~|~~<br>~~Pe~~|20<br>~~Pe~~|µA<br>~~Pe~~<br>~~se~~|VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C<br>~~Pe~~|
|||–––<br>~~|~~<br>~~Pe~~<br>~~|~~|–––<br>~~|~~<br>~~Pe~~<br>|250<br>~~Pe~~<br>~~se~~<br>|||
|IGSS|Gate-to-Source Forward Leakage<br>~~Pe~~<br>~~a~~<br>~~|~~|–––<br>~~Pe~~<br>~~a~~<br>~~|~~|–––<br>~~Pe~~<br>~~a~~<br>|200<br>~~Pe~~<br>~~a~~<br>~~se~~<br>|nA<br>~~Pe~~<br>~~a~~<br>~~se~~|VGS= 20V<br>VGS= -20V<br>~~Pe~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~ee~~|-200<br>~~a~~<br>~~se~~<br>~~TT~~|||
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~es~~|–––<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|63<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|95<br>~~a~~<br>~~se~~<br>~~TT~~<br>~~es~~|nC<br>~~a~~<br>~~se~~|VGS= 10V<br>ID= 75A<br>VDS= 44V<br>~~a~~<br>eg)|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|19<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es ~~|–––<br>~~ee~~<br> ~~ee~~<br>~~ee~~|24<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~es~~|–––<br>~~ee~~<br> <br>~~es~~<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br><br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 75A<br>RG= 6.8Ω<br>VGS= 10V<br>eg)|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|150<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|36<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~|||
|tf|Fall Time<br>~~es ~~|–––<br>~~ee~~<br> ~~ee~~|92<br>~~ee~~<br>~~ee~~|–––|||
|LD|Internal Drain Inductance<br>~~es ~~<br>~~ee~~|–––<br>~~ee~~<br> <br>~~ee~~|4.5<br>~~ee~~<br><br>~~ee~~|–––<br>~~ee~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance<br>~~ae~~|–––<br>~~ae~~<br>~~ee~~|7.5<br>~~ae~~<br>~~ee~~|–––<br>~~ae~~|||
|Ciss|Input Capacitance<br>~~ae~~<br>~~es~~|–––<br>~~ae~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2840<br>~~ae~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ae~~<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|420<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1630<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>~~®~~|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|360<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~®~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~ee~~|560<br>~~ee~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~®~~|



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1000 1000<br>eno otimaa! © SHEEEES<br>|| | ovllll | YaaLTH<br>100<br>Bottom 4.s5vSSI PR BOTTOM 4.5VSV Ue emi<br>100<br>OY PIN e ee<br>10 Fee | ee onalZamna etl oemseeatt|ea<br>ia | ee ee SEE |pot<br>rr ee 4.5V a 20µs PULSE WIDTH er Al 4.5V 20µs PULSE WIDTH<br>elie T Tj = 25°C l AeWell | Tj = 175°C il<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 100<br>TJ = 25°C TJ = 175°C<br>T|a ee A ee P fo T eee = 175°C )eee 80 L[7 e A"<br>J<br>100<br>ae a e<br>60<br>T = 25°C<br>| Ay, | | Jf Jf Jf] J<br>ALT TP) 40 L K<br>10<br>2eEy ee ee eeeee VDS  ee = 25V ee oeeee 20 aY/VA a VDS = 10V n<br>20µs PULSE WIDTH<br>e e 20µs PULSE WIDTH<br>1 0<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 20 40 60 80<br>VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>A)<br> (<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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5000 20<br>VGS   = 0V,       f = 1 MHZ ID= 75A<br>Ciss   = C gs + Cgd,  C ds SHORTED VDS= 44V<br>C  = C<br>4000 rss   gd  16 VDS= 28V<br>C = C + C<br>e oss   ds  gd S<br>12<br>3000 om Ciss<br>8<br>2000<br>S T C =EEE<br>4<br>1000<br>S C Coss C =a<br>Crss<br>0<br>0<br>0 20 40 60 80 100<br>1 S e 10 e m 100 =<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100.0<br>T = 175°C<br>J<br>100<br>10.0 100µsec<br>T = 25°C 10<br>J<br>1msec<br>1.0<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 0.1<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>LIMITED BY PACKAGE ID = 75A<br>VGS = 10V<br>80<br>reat | 2.0 PE ELE<br>aN SERRRnED<br>60<br>T N} a<br>1.5<br>ENC A t<br>40<br>\ T PA<br>20 1.0<br>PLN L EE<br>PEPIN TEETER<br>0<br>eCTELEEEE ELL<br>0.5<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1<br>I IE rn<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>ee eee 2. Peak Tj = P dm x Zthjc + Tc I<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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250<br>15V<br>200<br>VDS L DRIVER<br>S KuneH<br>RG D.U.T + 150<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01 Ω 100<br>c i \ \GHEE<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 50<br>tp<br>CTPSSO<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>y ||<br>|<br>IAS 7y SQ<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>Vs. Drain Current<br>QG<br>QGS QGD 4.0<br>VG<br>| ESCHEERED<br>ID = 250µA<br>3.0<br>Charge - BaRnSe eee<br>Fig 13a.   Basic Gate Charge Waveform ALLEL LANE<br>2.0<br>tity tN<br>L EEL EER<br>VCC<br>DUT<br>0 1.0<br>Fl. » LET EE EE<br>1K -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>Fig 13b.   Gate Charge Test Circuit Fig 14.   Threshold Voltage Vs. Temperature<br>6 www.irf.com<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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1000<br>Duty Cycle = Single Pulse<br>pot tA POA EE Allowed avalanche Current vs<br>100 A a) | avalanche  pulsewidth,  tav  il<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>a ee, St ee case should Tj be allowed to  mall<br>0.05 exceed Tjmax<br>10 TS  SIP ill<br>0.10<br>PEE EE ETEPSSST<br>pt eH<br>1 P T FEI P TTaiTTS Et TT<br>ae aa ee | ee0ell<br>0.1<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>140 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>120 Gia BOTTOM   10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A   Purely a thermal phenomenon and failure occurs at a<br>I L     temperature far in excess of Tjmax. This is validated for<br>100 AN a     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>80 E NGR   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>60 PL ENGELi~  ELL   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>R NG<br>40 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 S ILT aN 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>0 P L EEE EE PNEK     T  tav = jmax Average time in avalanche.(assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO I¢aR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL |<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002.<br>80 24 DATE CODE<br>ASSEMBLY uy YEAR 0 =  2000<br>assembly"Lead line- Free”position LOT CODE TU , V? U WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TeaR8024P0024; DATE CODEP =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLYLOT CODE qTU reoeU YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO |TRIRL3103L719C<br>17 89 DATE CODE<br>Note: "P”indicatesin assembly“Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TOR17 P7i9489 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

**==> picture [60 x 9] intentionally omitted <==**

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www.irf.com<br>**----- End of picture text -----**<br>


11 

## Dimensions are shown in millimeters (inches) 

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1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>it 1.65 (.065) aay 11.40 (.449) 15.42 (.609)15.22 (.601) £4 24.30 (.957)23.90 (.941)<br>TRL<br>Gi<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>a 12.80 (.504) 23.90 (.941) or<br>4<br>| 330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>F<br>30.40 (1.197)<br>NOTES :       MAX.<br>5 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 I 4<br>**----- End of picture text -----**<br>


mes: Repetitive rating;  pulse width limited by 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

max. junction temperature. (See fig. 11). avalanche performance. ®© Limited by TJmax, starting TJ = 25°C, L = 0.05mH This value determined from sample failure population. 100% RG = 25 Ω , IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. 

This value determined from sample failure population. 100% tested to this value in production. 

@ This is only applied to TO-220AB pakcage. This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

12 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1010ZSTRLPBF/power-mosfet-n-channel-55-v-75-a-7500-ohm-to-263)
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- [Supplier page](https://es.farnell.com/infineon/irf1010zstrlpbf/mosfet-n-ch-55v-75a-to-263/dp/2781105)
---

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