# Power MOSFET, N Channel, 55 V, 85 A, 0.011 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725879/)

**URL**: https://novapart.co/products/IRF1010NSTRLPBF/power-mosfet-n-channel-55-v-85-a-0011-ohm-to-263ab
**SKU**: IRF1010NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7430
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 180W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 85A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725879/)

## PD - 95103 IRF1010NSPbF IRF1010NLPbF 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 11mΩ<br>DS(on)<br>G<br>ID = 85A<br>S<br>   D   Pak2  TO-262<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010NL) is available for lowprofile applications. 

|Seo<br>—————————————a<br>~~ee~~|**Parameter**<br>Seo<br>—--..-YT<br>—————————————a<br>~~ee~~|**Max.**<br>Seo<br>YT<br>—————————————a<br>~~ee~~|**Units**<br>Seo<br>YT<br>—————————————a<br>~~ee~~|
|---|---|---|---|
|ID@ TC= 25°C<br>—————————————a<br>es~~ee~~|Continuous Drain Current, VGS@ 10V<br>—--..-YT<br>—————————————a<br>~~ee~~|85<br>YT<br>—————————————a<br>~~ee~~|A<br>YT<br>—————————————a<br>~~ee~~|
|ID@ TC= 100°C<br>es~~ee~~|Continuous Drain Current, VGS@ 10V<br>~~ee~~|60<br>~~ee~~||
|IDM<br>es~~ee~~|Pulsed Drain Current<br>~~ee~~|290<br>~~ee~~||
|PD@TC= 25°C<br>~~ee~~<br>~~es~~<br>~~ee~~|Power Dissipation<br>~~ee~~<br>~~es~~<br>~~ee~~|180<br>~~ee~~<br>~~es~~<br>~~ee~~|W<br>~~ee~~<br>~~es~~<br>~~ee~~|
|~~ee~~|Linear DeratingFactor<br>~~ee~~|1.2<br>~~ee~~|W/°C<br>~~ee~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|43<br>~~a~~|A<br>~~a~~|
|EAR<br>~~oo~~|Repetitive Avalanche Energy<br>~~oo~~|18<br>~~oo~~|mJ<br>~~oo~~|
|dv/dt<br>~~9~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~9~~<br>~~pf~~|3.6<br>~~9~~|V/ns<br>~~9~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175|°C|
|~~pf~~<br>~~a~~|SolderingTemperature, for 10 seconds<br>~~pf~~|300(1.6mm from case)||
|~~pf~~<br>~~a~~|Mounting torque, 6-32 or M3 srew<br>~~pf~~|10 lbf•in (1.1N•m)||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~<br>~~es~~|**Typ. **<br>es<br>~~es~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~rs~~|55<br>~~ee~~<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~es~~|–––<br>~~rs~~|V<br>~~rs~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~rs~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|0.058<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~rs~~|–––<br>~~es~~|–––<br>~~es~~|11|mΩ|VGS= 10V, ID= 43A<br>~~®~~|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~rs ~~<br>~~es~~<br>~~Sn~~|2.0<br> ~~es ~~<br>~~es~~|–––<br> ~~es~~<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~IG)~~|
|gfs<br>~~Sn~~<br>~~por~~|Forward Transconductance<br>~~Sn~~<br>~~por~~|32<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|S|VDS= 25V, ID= 43A<br>~~IG)~~|
|IDSS<br>~~Sn~~<br>~~por~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|25<br>~~por~~|µA|VDS= 55V, VGS= 0V<br>~~IG)~~|
|||–––<br>~~por~~|–––<br>~~por~~|250<br>~~por~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~IG)~~|
|IGSS<br>~~por~~|Gate-to-Source Forward Leakage<br>~~por~~<br>~~ee~~|–––<br>~~por~~<br>~~ee~~|–––<br>~~por~~|100<br>~~por~~|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|-100<br>~~por~~||VGS= -20V|
|Qg<br>ee|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|120|nC|ID= 43A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>~~©®~~|
|Qgs<br>ee<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|19|||
|Qgd<br>ee<br>~~ee~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>|41<br>|||
|td(on)<br>~~ee~~<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br><br>ee|13<br>~~ee~~<br>|–––<br>~~ee~~<br>|ns|VDD= 28V<br>ID= 43A<br>RG= 3.6Ω<br>VGS= 10V, See Fig. 10<br>~~©®~~<br>©®|
|tr<br>~~ee~~<br>~~ee~~<br>ee|Rise Time<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|76<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~<br>ee<br>~~ne~~|Turn-Off Delay Time<br><br>~~en~~|–––<br>ee<br><br>ee<br>~~nel~~|39<br><br>~~nel~~|–––<br><br>~~nel~~|||
|tf<br>ee<br>~~ne~~|Fall Time<br>~~en~~<br>|–––<br>ee<br>~~nel~~<br>|48<br>~~nel~~<br>||–––<br>~~nel~~<br>||||
|LD<br>~~ne~~<br>~~[Fe~~|Internal Drain Inductance<br>~~en~~<br>~~tt~~<br>~~[Fe~~|–––<br>~~nel~~<br>~~tt~~<br>~~[Fe~~|~~nel~~<br>~~tt~~|<br>~~[Fe~~|–––<br>~~nel~~<br>|<br>~~[Fe~~|nH<br>~~[Fe~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>©®<br>~~e~~|
|LS<br>~~ne~~<br>~~[Fe~~<br>~~ee~~|Internal Source Inductance<br>~~en~~ <br>~~tt~~<br>~~[Fe~~|–––<br> ~~nel~~<br>~~tt~~<br>~~[Fe~~<br>ee|~~nel~~<br>~~tt~~|<br>~~[Fe~~|–––<br>~~nel~~<br>|<br>~~[Fe~~|nH<br>~~[Fe~~||
|Ciss<br>~~[Fe~~<br>~~ee~~|Input Capacitance<br>~~[Fe~~<br>~~ee~~|–––<br>~~[Fe~~<br>~~ee~~<br>ee|3210<br>~~[Fe~~<br>~~ee~~|–––<br>~~[Fe~~<br>~~ee~~|pF<br>~~[Fe~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~e~~|
|Coss<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~|690<br>~~ee~~|–––|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~|140<br>~~ee~~<br>~~©~~|–––<br>>)|||
|EAS<br>~~ee~~<br>~~2~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~2~~|––– 1030<br>~~ee~~<br>~~ee~~<br>~~2~~|1030<br>~~ee~~<br>~~2~~<br>~~©~~|250<br>~~2~~<br>>)|mJ<br>~~2~~|IAS= 4.3A, L = 270µH<br>~~2~~|



Notes: ~~©©~~ Repetitive rating;  pulse width limited by This is a calculated value limited to TJ = 175°C . = 175°C . 

Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 0 Starting TJ = 25°C, L = 270µH[@] 

This is a calculated value limited to TJ = 175°C . 

Calculated continuous current based on maximum allowable 

- junction temperature. Package limitation current is 75A. Uses IRF1010N data and test conditions. 

RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) e) ISD ≤ 43A . di/d ft ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

- ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

- This is a typical value at device destruction and represents operation outside rated limits. 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V a 8.0V<br>7.0V 0 7.0V<br>6.0V 6.0V<br>5.5V HI a 5.5V A<br>5.0V ZA 5.0V Hi |<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100  100<br>4.5V<br>PF Alli on 4.5V ae 4oamereumemallll<br> 10  10<br> 1 SPII IT 20µs PULSE WIDTHT  = 25J °C  1 TPL HI 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.5<br>ID = 85A<br>T  = 25  CJ °<br>a 7 [T] [T]<br>2.0<br>T  = 175  CJ °<br>B AA<br>| 1.5 EEE<br>P Y) peepee<br> 10<br>ey<br>Sas=5 6TH<br>es 2 eseSssee 1.0 AC<br>ASSESS Eee<br>0.5<br>V      = 25VDS<br>20µs PULSE WIDTH PET E VGS = 10V<br> 1 0.0 TT t tt<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>6000 ID = 43A<br>VGS   = 0V,       f = 1 MHZ<br>T T. Ciss    = Cgs + Cgd,   Cds    SHORTED Po VDS = 44V Pt|<br>5000 Crss    = Cgd  16 VDS = 27V<br>Coss   = Cds + Cgd VDS = 11V ><br>4000 Ciss<br>p e ett} +t Ht 12 a a<br>| if<br>3000<br>Coss<br>8<br>2000 S oH = EECA<br>PE E EHH gh<br>P NT TT 4 TT AT TT<br>1000 Crss<br>P i —| 47<br>| | DaneGl FOR TEST CIRCUIT<br>0 a ZGnGe SEE FIGURE       13<br>0<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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 1000<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br> 100<br>| | ° eer fd Aan<br>T  = 175  CJ<br>= AAS 100 eg CH<br>ie A A s ENolll<br> 10 | 100µsec tes<br>| Ff {| { [| SSRs ott<br>SS SS SS SSS SS P| TN St nl<br>a<br>rT | Pt fT fteeTC 10 SSO 1msec<br> 1 T  = 25  CJ °<br>Tc = 25°C<br>0.1 Loen ss ee V      = 0 V GS 1 po Tj = 175°CSingle Pulse Lh 10msec mill<br>0.0 0.6 1.2 1.8 2.4<br>V     ,Source-to-Drain Voltage (V)SD 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>Sa an Mes ou,<br>oo ee Re | _ - ;<br>60<br>SERENE eEeEe °°<br>OOO 1 vos ≤ 1<br>≤ 0.1 %<br>40<br>pt tet ty NG buy Facer<br>PEt TT ETT TIN "<br>RRA Fig 10a. Switching Time Test Circuit<br>20<br>VDS<br>90%<br>pt ttt tee ttt tA [TFN<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PLETE TET EET 10% \\<br>/\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 1 I<br>acl<br>e D = 0.50 e<br>p F<br>0.20<br>Ar at<br>0.10<br>0.1 er<br>je | seo SOS ey HHH<br>0.05 PDM<br>Se eee<br>SINGLE PULSE<br>0.02 (THERMAL RESPONSE) t1<br>0.01<br>t2<br>= B pet Pe E te Notes:<br>1. Duty factor D = t   / t1 2<br>ere C n 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>ID<br>Pit<br>TOP 18A<br>30A<br>400 BOTTOM 43A<br>NESEEEE<br>DRE<br>PNP<br>300 GAL Tt<br>200<br>PSSST..<br>100<br>|pptt|ptt|SSAtt SSAtt Tt<br>OSS<br>0 SERRE EEEn. <~S<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V D<br>TOP 18A<br>30A<br>L DRIVER 400 NESEEEE BOTTOM 43A<br>VDS<br>DRE<br>RG D.U.T + 300 PNP<br>- [V][DD]<br>IAS A<br>20VVGS<br>aii tp 0.01Ω GAL Tt<br>200<br>Fig 12a. Unclamped— Inductive Test Circuit PSSST..<br>100<br>|<br>V(BR)DSS |pptt|ptt|SSAtt Tt<br>— tp OSS<br>0 SERRE EEEn. <~S<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJJ (  C)°°<br>/ y |\ Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Oo Same Type as D.U.T. 7<br>|<br>50KΩ<br>12V .2µF<br>QG .3µF<br>CT 1 fe<br>+<br>Ves BO : D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>ey cs |<br>On.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>@ •   D.U.T. - Device Under Test<br>> Isp controlled by Duty Factor "D"<br>*Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee cee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL oY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO TOR 0021<br>80 24 D AT E  COD E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y V J U 7 U‘f U YE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL —<br>R E CT IF IE R F 530S<br>L OGO TeaRPoo2A<br>80 24 D AT E  CO D E<br>AS S E MB L Y LJ uU P  =  D E SP R O D U CT  (O P T ION AL )IGN AT E S  L E AD -F R E E<br>L OT  COD E 7,U 7,U Y E AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y  S IT E  CO D E<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

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IGBT<br>1-  GAT — E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL —S<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IORIRL3103L719¢<br>Note: "P" in assembly line 1789 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL CS<br>RECTIFIER IRL3103L<br>LOGO TORP7I9A<br>DATE CODE<br>1789<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>Trae =<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>an 16.10 (.634) a 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>: 12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) TE o 4<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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