# Power MOSFET, N Channel, 55 V, 68 A, 0.011 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8647976/)

**URL**: https://novapart.co/products/IRF1010NPBF/power-mosfet-n-channel-55-v-68-a-0011-ohm-to-220ab
**SKU**: IRF1010NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9050
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 115W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 68A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8647976/)

PD - 94966A 

## IRF1010NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 55V<br>R  = 11m Ω<br>DS(on)<br>G<br>ID = 85A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** a **Parameter Max. Units** a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85 ow?Fo7 — ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A © IDM Pulsed Drain Current 290 ~~a~~ PD @TC = 25°C Power Dissipation 180 W ~~a~~ Linear Derating Factor 1.2 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ IAR Avalanche Current 43 A ~~©~~ EAR Repetitive Avalanche Energy 18 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 3.6 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~a~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf eenD~~ Mounting torque, 6-32 or M3 srew ~~I~~ 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.85|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|55<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.058<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~es~~<br>~~es~~|–––|11|mΩ|VGS= 10V, ID= 43A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~Se~~|2.0<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Se~~|–––<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs<br>~~por~~|Forward Transconductance<br>~~Se~~<br>~~por~~|32<br>~~es~~<br>~~Se~~<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|S|VDS= 25V, ID= 43A<br>~~®~~|
|IDSS<br>~~por~~|Drain-to-Source Leakage Current<br>~~Se~~<br>~~por~~|–––<br>~~Se~~<br>~~por~~|–––<br>~~por~~|25<br>~~por~~|µA|VDS= 55V, VGS= 0V<br>~~®~~|
|||–––<br>~~Se~~<br>~~por~~|–––<br>~~por~~|250<br>~~por~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~®~~|
|IGSS<br>~~por~~|Gate-to-Source Forward Leakage<br>~~por~~<br>~~ee~~|–––<br>~~por~~<br>~~ee~~|–––<br>~~por~~|100<br>~~por~~|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|-100<br>~~por~~||VGS= -20V|
|Qg<br>a|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|120<br>~~ee~~<br>|nC|ID= 43A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>a~~ee~~|Gate-to-Source Charge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|19<br>~~ee~~<br>~~a~~|||
|Qgd<br>a~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|41<br>~~ee~~<br>~~a~~|||
|td(on)<br>~~ee~~<br>ee|Turn-On Delay Time<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|13<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|ns|VDD= 28V<br>ID= 43A<br>RG= 3.6Ω<br>VGS= 10V, See Fig. 10|
|tr<br>~~ee~~<br>ee<br>ee|Rise Time<br>~~a~~<br>~~es~~<br>|–––<br>~~a~~<br>~~es~~|76<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|||
|td(off)<br>ee<br>ee|Turn-Off Delay Time<br>~~es~~<br>|–––<br>~~es~~|39<br>~~es~~|–––<br>~~es~~|||
|tf<br>ee~~i~~|Fall Time<br>~~i~~|–––|48|–––|||
|LD<br>~~i~~|Internal Drain Inductance<br>~~i~~<br>~~Pe~~|–––||–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS<br>~~i~~|Internal Source Inductance<br>~~i~~<br>~~Pe~~|–––||–––|nH||
|Ciss<br>~~ee~~|Input Capacitance<br>~~a~~|–––<br>~~a~~|3210<br>~~a~~|–––<br>~~a~~|pF<br><br>©)|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>|
|Coss<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~a~~<br>|–––<br>~~a~~<br>|690<br>~~a~~<br>|–––<br>~~a~~<br>|||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~a~~<br>|–––<br>~~a~~<br><br>~~SK~~|140<br>~~a~~<br><br>~~SK~~|–––<br>~~a~~<br><br>~~SK~~©)|||
|EAS<br>~~eeRn~~|Single Pulse Avalanche Energy<br>~~Rn~~|––– 1030<br>~~Rn~~<br>~~SK~~|1030<br>~~Rn~~<br>~~SK~~|250<br>~~Rn~~<br>~~SK~~©)|mJ<br>~~Rn~~<br>©)|IAS= 4.3A, L = 270µH<br>~~Rn~~|



**Source-Drain Ratings and Characteristics** 

Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

@ ISD ≤ 43A t di/d ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

@ Starting TJ = 25°C, L = 270µH @ Pulse width ≤ 400µs; duty cycle ≤ 2%. 

RG = 25 Ω , IAS = 43A, VGS=10V (See Figure 12) 

© This is a typical value at device destruction and represents operation outside rated limits. 

© This is a calculated value limited to TJ = 175°C . 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 0 a 7.0V A<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V HI ZA 5.0V a ol<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100  100<br>4.5V<br>P ANemat 4.5V ae 4oamereumemallll<br> 10  10<br> 1 SPII IT 20µs PULSE WIDTHT  = 25J °C  1 TPL HI 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 eeee ee ee 2.5 ID = 85A<br>T  = 25  CJ °<br>= a ee eee a eee eee 2.0 S ee,<br>T  = 175  CJ °<br>B AA<br>| 1.5 EEE<br>P Y) peepee<br> 10<br>ey<br>Sas=5 6TH<br>es 2 eseSssee 1.0 AC<br>FRESE ee<br>0.5<br>V      = 25VDS<br>20µs PULSE WIDTH PET E VGS = 10V<br> 1 0.0 TT t tt<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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20<br>6000 ID = 43A<br>VGS   = 0V,       f = 1 MHZ<br>T T. Ciss    = Cgs + Cgd,   Cds    SHORTED Po VDS = 44V Pt|<br>5000 Crss    = Cgd  16 VDS = 27V<br>Coss   = Cds + Cgd VDS = 11V ><br>4000 Ciss<br>p e ett} +t Ht 12 a a<br>ST] if<br>3000<br>Coss<br>8<br>2000 S oH = EECA<br>P ATHE EH gh<br>Py NTT TAT<br>4<br>1000 Crss<br>P i —| 47<br>| | DaneGl FOR TEST CIRCUIT<br>0 a Art SEE FIGURE       13<br>0<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br> 100 | | | | ee et mel<br>T  = 175  CJ °<br>a A TCT<br>100<br> 10 100µsec<br>= eet eee<br>==. CPP SCTE<br> 1 T  = 25  CJ ° 10 1msec<br>Tc = 25°C<br>0.10.0 Ff} 0.6 1.2 1 1.8V      = 0 V GS 2.4 1 po Tj = 175°CSingle Pulse  Hh 10msec mill<br>V     ,Source-to-Drain Voltage (V)SD 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>RL nan Mes hou |<br>oo ee Re | _ - ;<br>60<br>SERENE eEeEe °°<br>OOO 1 vos ≤ 1<br>≤ 0.1 %<br>40<br>pt tet ty NG buy Facer<br>PEt TT ETT TIN "<br>RRA Fig 10a. Switching Time Test Circuit<br>20<br>VDS<br>90%<br>pt ttt tee ttt tA [TFN<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PLETE TET EET 10% \\<br>/\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 1 I<br>acl<br>e D = 0.50 e<br>p F<br>0.20<br>Ar at<br>0.10<br>0.1<br>rrer ee ee eee ee ee eee eee ee eee<br>0.05 PDM<br>Se eee<br>SINGLE PULSE<br>0.02 (THERMAL RESPONSE) t1<br>0.01<br>t2<br>= B pet Pe E te Notes:<br>1. Duty factor D = t   / t1 2<br>e atin 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>ID<br>Pit<br>TOP 18A<br>30A<br>400 BOTTOM 43A<br>NESEEEE<br>DRE<br>PNP<br>300 GAL Tt<br>200<br>PSSST..<br>100<br>|pptt|ptt|SSAtt SSAtt Tt<br>OSS<br>0 SERRE EEEn. <~S<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V D<br>TOP 18A<br>30A<br>L DRIVER 400 NESEEEE BOTTOM 43A<br>VDS<br>DRE<br>RG D.U.T + 300 PNP<br>- [V][DD]<br>IAS A<br>20VVGS<br>aii tp 0.01 Ω GAL Tt<br>200<br>Fig 12a. Unclamped— Inductive Test Circuit PSSST..<br>100<br>|<br>V(BR)DSS |pptt|ptt|SSAtt Tt<br>— tp OSS<br>0 SERRE EEEn. <~S<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJJ (  C)°°<br>/ y |\ Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Oo Same Type as D.U.T. 7<br>50K Ω<br>12V .2 µ F<br>QG .3 µ F<br>CT res<br>+<br>Ves BO : D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>ey cs |<br>On.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>@ •   D.U.T. - Device Under Test<br>> Isp controlled by Duty Factor "D"<br>*Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO IR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Int tional 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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