# Power MOSFET, N Channel, 60 V, 84 A, 8500 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8657327/)

**URL**: https://novapart.co/products/IRF1010EZPBF/power-mosfet-n-channel-60-v-84-a-8500-ohm-to-220ab
**SKU**: IRF1010EZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6030
**Stock**: 200+
**Lead Time**: 309 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 84A |
| Drain Source On State Resistance | 8500µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8657327/)

PD - 95483C 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 60V<br>R  = 8.5m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>TO-220AB D [2] Pak TO-262<br>IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**<br>~~———_————~~|**Max.**<br>~~———_————~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~SW~~<br>~~———_————~~|84<br>~~SW~~<br>~~HrNN~~<br>~~———_————~~|A<br>~~ae~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V(See Fig. 9)<br>~~TNT~~<br>~~———_————~~|60<br>~~TNT~~<br>~~HrNN~~<br>~~———_————~~||
|ID@ TC= 25°C|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~SW~~<br>~~———_————~~|75<br>~~HrNN~~<br>~~SW~~<br>~~———_————~~||
|IDM|Pulsed Drain Current<br>~~———_————~~|340<br>~~———_————~~||
|PD@TC= 25°C|Maximum Power Dissipation<br>~~———_————~~<br>~~LO~~|140<br>~~———_———— ~~<br>~~LO~~|W<br> ~~ae~~<br>~~LO~~|
|~~-WwAPrC--.-.-W~~|Linear DeratingFactor<br>~~a~~<br>~~-WwAPrC--.-.-W~~|0.90<br>~~a~~<br>~~rT~~|W/°C<br>~~a~~<br>~~rT~~|
|VGS<br>~~-WwAPrC--.-.-W~~|Gate-to-Source Voltage<br>~~a~~<br>~~-WwAPrC--.-.-W~~|± 20<br>~~a~~<br>~~rT~~|V<br>~~a~~<br>~~rT~~|
|EAS<br>~~-WwAPrC--.-.-W~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~-WwAPrC--.-.-W ~~<br>~~Fo~~<br>~~ee~~|99<br> ~~rT~~<br>~~Fo~~<br>~~ee~~|mJ<br>~~rT~~<br>~~ee~~<br>~~eee~~|
|EAS(tested)|Single Pulse Avalanche EnergyTested Value<br>~~ee~~|180<br>~~ee~~||
|IAR|Avalanche Current<br>~~ee~~<br>~~ee~~<br>~~el~~|See Fig.12a,12b,15,16<br>~~ee~~<br>~~el~~|A<br>~~ee~~<br>~~el~~<br>~~eee~~|
|EAR|Repetitive Avalanche Energy<br>~~el~~||mJ<br>~~el~~<br>~~eee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~el~~<br>~~ee~~|-55  to + 175<br>~~el~~<br>~~ee~~|°C<br>~~el~~<br>~~eee~~<br>~~ee~~|
||SolderingTemperature,for 10 seconds<br>~~ee~~|300 (1.6mm from case )<br>~~ee~~||
||Mountingtorque,6-32 or M3 screw<br>~~ee~~<br>~~SO~~|10 lbf•in (1.1N•m)<br>~~ee~~<br>~~SO~~|~~ee~~<br>~~SO~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

1 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GD~~|**Typ. **<br>~~GD~~|**Max. **<br>~~GO~~|**Units**<br>~~DQ~~|**Conditions**<br>~~DQ~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Rn~~|60<br>~~Rn~~<br>~~GD~~|–––<br>~~Rn~~<br>~~GD~~|–––<br>~~Rn~~<br>~~GO~~<br>~~GO~~|V<br>~~Rn~~<br>~~DQ~~<br>~~GO~~|VGS= 0V, ID= 250µA<br>~~Rn~~<br>~~DQ~~<br>~~GO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~|. Coefficient<br>–––<br>~~GD~~<br>~~GO~~<br>~~GD~~|0.058<br>~~GD ~~<br>~~GO~~<br>~~GD~~|–––<br> ~~GO ~~<br>~~GO~~<br>~~GO~~<br>~~GO~~|V/°C<br> ~~DQ~~<br>~~GO~~<br>~~GO~~<br>~~QO~~|Reference to 25°C, ID= 1mA<br>~~DQ~~<br>~~GO~~<br>~~GO~~<br>~~QO~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Rs~~|Static Drain-to-Source On-Resistance<br>–––<br>~~Rs~~<br>~~GD~~<br>~~I~~|6.8<br>~~Rs~~<br>~~GD~~<br>~~GD~~|8.5<br>~~GO ~~<br>~~Rs~~<br>~~GO~~<br>~~GO~~|mΩ<br> ~~GO~~<br>~~Rs~~<br>~~QO~~<br>~~GO~~|VGS= 10V, ID= 51A<br>~~GO~~<br>~~Rs~~<br>~~QO~~<br>~~©~~<br>~~GO~~|
|VGS(th)|Gate Threshold Voltage<br>~~RD~~|2.0<br>~~GD~~<br>~~RD~~<br>~~I~~|–––<br>~~GD ~~<br>~~RD~~<br>~~GD~~|4.0<br> ~~GO~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|V<br>~~QO~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|VDS= VGS, ID= 100µA<br>~~QO~~<br>~~©~~<br>~~RD~~<br>~~GO~~<br>~~GO~~|
|gfs|Forward Transconductance<br>~~RD~~<br>~~GO~~|200<br>~~RD~~<br>~~I ~~<br>~~GO~~|–––<br>~~RD~~<br> ~~GD ~~<br>~~GO~~|–––<br>~~RD~~<br> ~~GO ~~<br>~~GO~~<br>~~GO~~<br>~~LE~~|S<br>~~RD~~<br> ~~GO~~<br>~~GO~~<br>~~GO~~<br>~~LE~~|VDS= 25V, ID= 51A<br>~~RD~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~LE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~GO~~<br>~~ES~~|–––<br>~~GO~~<br>~~ES~~|–––<br>~~GO~~<br>~~ES~~|20<br>~~GO~~<br>~~GO ~~<br>~~ES~~<br>~~LE~~|µA<br>~~GO~~<br> ~~GO~~<br>~~ES~~<br>~~LE~~|VDS= 60V, VGS= 0V<br>~~GO~~<br>~~GO~~<br>~~ES~~<br>~~LE~~|
|||–––<br>~~ES~~|–––<br>~~ES~~|250<br>~~ES~~<br>~~LE~~||VDS= 60V, VGS= 0V, TJ= 125°C<br>~~ES~~<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~———~~|–––<br>~~———~~<br>~~a~~|–––<br>~~———~~<br>~~ee~~|200<br>~~LE~~<br>~~———~~|nA<br>~~LE~~<br>~~———~~|VGS= 20V<br>~~LE~~<br>~~———~~|
||Gate-to-Source Reverse Leakage<br>~~———~~|–––<br>~~———~~<br>~~a~~|–––<br>~~———~~<br>~~ee~~|-200<br>~~———~~||VGS= -20V<br>~~———~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|58<br>~~ee~~<br>~~ee~~|86<br>~~ee~~|nC|ID= 51A<br>VDS= 48V<br>VGS= 10V<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~es~~|19<br>~~es~~|28<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––|21|32|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~a~~|–––<br>~~a~~|19<br>~~a~~|–––<br>~~a~~|ns<br>~~|~~|RG= 7.95Ω<br>VDD= 30V<br>ID= 51A<br>VGS= 10V<br>~~@~~<br>~~Se~~|
|tr|Rise Time<br>~~a~~|–––<br>~~a~~|90<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~a~~|38<br>~~a~~|–––<br>~~a~~|||
|tf<br>~~Pe~~|Fall Time<br>~~Pe~~<br>~~—+~~|–––<br>~~Pe~~<br>~~—+~~|54<br>~~Pe~~<br>~~Fr~~|–––<br>~~Pe~~<br>~~Fr~~|||
|LD<br>~~Pe~~|Internal Drain Inductance<br>~~Pe~~<br>~~—+~~|–––<br>~~Pe~~<br>~~—+~~|4.5<br>~~Pe~~<br>~~Fr~~|–––<br>~~Pe~~<br>~~Fr~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~Se~~|
|LS<br>~~Pe~~|Internal Source Inductance<br>~~Pe~~<br>~~—+~~|–––<br>~~Pe~~<br>~~—+~~|7.5<br>~~Pe~~<br>~~Fr~~|–––<br>~~Pe~~<br>~~Fr~~|||
|Ciss|Input Capacitance<br>~~—+~~<br>~~a~~|–––<br>~~—+~~<br>~~a~~|2810<br>~~Fr~~<br>~~a~~|–––<br>~~Fr~~<br>~~a~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~Se~~|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|420<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~|–––<br>~~a~~|200<br>~~a~~|–––<br>~~a~~|||
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|1440<br>~~a~~|–––<br>~~a~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>|320<br>~~a~~<br>|–––<br>~~a~~<br>||VGS= 0V,  VDS= 48V,ƒ= 1.0MHz|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~a~~|–––<br>|510<br>|–––<br>||VGS= 0V, VDS= 0V to 48V|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.077mH, RG = 25 Ω , IAS = 51A, VGS =10V. Part not recommended for use above this value. ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. 

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10000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>1000 7.0V6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>100<br>e S” <i east ee renee<br>10<br>a te<br>1<br>4.5V<br>20µs PULSE WIDTH<br>0.1 PT Tj = 25°C<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100<br>T = 175°C<br>J<br>A<br>10<br>C aan?<br>a<br>T = 25°C<br>J<br>1<br>SS }<br>VDS = 25V<br>≤ 60µs PULSE WIDTH<br>0.1 FL<br>4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>100 5.5V<br>5.0V<br>BOTTOM 4.5V<br>Pg|<br>10 4.5V<br>1 > ” il | |<br>20µs PULSE WIDTH<br>0.1 PT ET Tj = 175°C malll<br>0.01 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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100<br>90<br>80 TJ = 25°C<br>70<br>60<br>| | A jo} [tt]<br>50<br>T = 175°C<br>J<br>an e<br>40 2 An<br>30<br>20 P O<br>10<br>0 Pi | | | | ft<br>0 20 40 60 80 100 120 140<br>ID,Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000 12.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 51A<br>Crss   = Cgd  10.0 VDS= 48V<br>Ff Coss  = Cds + Cgd VDS= 30V ae<br>10000 eee 8.0 p f VDS= 12V le<br>C 6.0<br>iss<br>1000 4.0<br>C<br>oss<br>2.0<br>C<br>rss<br>100 ei l e 0.0 Ji | | | | |<br>1 10 100 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.00<br>100.00<br>T = 175°C<br>J<br>10.00<br>TJ = 25°C<br>1.00<br>VGS = 0V<br>0.10<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>1000 LIMITED BY R DS(on)<br>100 100µsec<br>1msec<br>10<br>10msec<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>90 ID = 84A<br>Limited By Package VGS = 10V<br>80<br>=a e 2.0 “T HTPELLET LLYTP<br>70 e e y<br>60<br>50 1.5<br>40 P ENS A T<br>30<br>1.0<br>erNe e e/ |<br>20<br>e e 5<br>10 TN TE EELLELLLE<br>0 reo 0.5 L b<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 e e<br>D = 0.50<br>0.20<br>0.1 0.10 R1 R1 R2 R2 R3R3 Ri (°C/W)     τ i (sec)<br>0.05 τ J τ J τ C τ 0.415       0.000246<br>0.02 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.410       0.000898<br>0.01<br>0.01 Ci= Ci τ i / Rii / Ri 0.285       0.009546<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.001 FT tT TE CE ET SCE EEE 2. Peak Tj = P dm x Zthjc + Tc 1<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>“<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>“4 tp<br>al<br>=<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>soy [S] [o]<br>4 Le QGS “* QGD ><br>VG<br>Charge -<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>pelt .3 µ F<br>+<br>D.U.T. -VDS<br>VGS<br>_&<br>3mA<br>ot<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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400<br>ID<br>NEREEEE<br>350 TOP         5.7A<br>9.1A<br>N EE<br>300 BOTTOM 51A<br>250 E NGREEE<br>200<br>150 N EAEEE EEE<br>100<br>P ENN<br>50<br>P PPS RSS<br>PE |BSS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>4.5<br>4.0<br>T OT<br>3.5<br>C ANSEETT<br>ID = 250µA<br>3.0<br>P PP E NTE<br>CT TW<br>2.5<br>2.0<br>C TT<br>1.5 NG<br>P EPE<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>CO T TJ , Temperature ( °C ) rr<br>VGS(th) Gate threshold Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10 0.05<br>0. 10<br>1<br>er<br>0.1 ee ee eel<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 51A   Purely a thermal phenomenon and failure occurs at a<br>75 N i     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>50 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>B NA     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>25     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>U n 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>A NS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V i GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>- a | = - ® + RecoveryCurrent r Body Diode ForwardCurrent di/dt 7\<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>•   Re-Applied<br>Re ) •   dvidtDriver controlledsame type byas ReD.U.T. Vpp + Voltage Body Diode  Forward Drop L<br>•   - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>**----- End of picture text -----**<br>


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Fig 17.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>**----- End of picture text -----**<br>


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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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**==> picture [371 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO IeaR 019¢<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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**==> picture [271 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL —<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO ICR 002i<br>DATE CODE<br>80 24<br>ASSEMBLY HUY YEAR 0 =  2000<br>assembly line position LOT CODE \? 7 WEEK 02<br>“Lead — Free” U u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL CN<br>RECTIFIER F530S<br>LOGO TEAR PO02A DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>LOT CODE aU nt;UJ YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [294 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IeaRIRL3103L719C<br>DATE CODE<br>17 89<br>YEAR 7 =  1997<br>Note: “P”indicatesin assembly"Lead line- Free”position ASSEMBLYLOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TEAR P719A<br>17 89 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1010ez.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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Dimensions are shown in millimeters (inches) 

**==> picture [339 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ia :<br>ZN — e460 6 4/4 pt =<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>NOTES : rs lL 30.40 (1.197)      MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) Ir 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF1010EZPBF/power-mosfet-n-channel-60-v-84-a-8500-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf1010ezpbf/mosfet-n-60v-84a-to-220/dp/8657327)
---

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