# Power MOSFET, N Channel, 60 V, 81 A, 0.012 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8647968/)

**URL**: https://novapart.co/products/IRF1010EPBF/power-mosfet-n-channel-60-v-81-a-0012-ohm-to-220ab
**SKU**: IRF1010EPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6240
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dis

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 81A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8647968/)

PD - 94965B 

## IRF1010EPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 60V<br>R  = 12m Ω<br>DS(on)<br>G<br>ID = 84A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** a **Parameter Max. Units** a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 ow?Fo7 — ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A © IDM Pulsed Drain Current 330 ~~a~~ PD @TC = 25°C Power Dissipation 200 W ~~a~~ Linear Derating Factor 1.4 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ IAR Avalanche Current 50 A ~~©~~ EAR Repetitive Avalanche Energy 17 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~a~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf eenD~~ Mounting torque, 6-32 or M3 srew ~~I~~ 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|~~es~~||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~es~~|**Typ. **<br>es<br>~~es~~|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~<br>~~Rs~~|60<br>~~es ~~<br>~~Rs~~<br>~~ee~~|–––<br> ~~es~~<br>~~Rs~~<br>~~ee~~|–––<br>~~Rs~~<br>~~ee~~|V<br>~~Rs~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~Rs~~|–––<br>~~es~~<br>~~ee~~|0.064<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Rs~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|12<br>~~ee~~|mΩ|VGS= 10V, ID= 50A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~Rs~~<br>~~es~~<br>~~Se~~|2.0<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~Se~~|–––<br> ~~ee~~<br>~~es~~|4.0<br>~~ee~~<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~<br>®@|
|gfs<br>~~por~~|Forward Transconductance<br>~~Se~~<br>~~por~~|69<br>~~ee~~<br>~~Se~~<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|S|VDS= 25V, ID= 50A<br>®@|
|IDSS<br>~~por~~|Drain-to-Source Leakage Current<br>~~Se~~<br>~~por~~|–––<br>~~Se~~<br>~~por~~|–––<br>~~por~~|25<br>~~por~~|µA|VDS= 60V, VGS= 0V<br>®@|
|||–––<br>~~Se~~<br>~~por~~|–––<br>~~por~~|250<br>~~por~~||VDS= 48V, VGS= 0V, TJ= 150°C<br>®@|
|IGSS<br>~~por~~|Gate-to-Source Forward Leakage<br>~~por~~<br>~~ee~~|–––<br>~~por~~<br>~~ee~~|–––<br>~~por~~|100<br>~~por~~|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~por~~|–––<br>~~por~~|–––<br>~~por~~|-100<br>~~por~~||VGS= -20V|
|Qg<br>~~—~~|Total Gate Charge<br>~~ee~~<br>~~—~~|–––<br>~~ee~~<br>~~—~~|–––<br>~~ee~~<br>~~—~~|130<br>~~ee~~<br>~~—~~|nC<br>~~—~~|ID= 50A<br>VDS= 48V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>~~—~~<br>~~ee~~|Gate-to-Source Charge<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~|28<br>~~—~~<br>~~ee~~|||
|Qgd<br>~~—~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~<br>ee|–––<br>~~—~~<br>~~ee~~|44<br>~~—~~<br>~~ee~~|||
|td(on)<br>~~ee~~|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>ee|12<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 30V<br>ID= 50A<br>RG= 3.6Ω<br>VGS= 10V, See Fig. 10<br>®|
|tr<br>~~ee~~<br>ee|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>ee<br>~~ee~~|78<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>ee<br>~~ne~~|Turn-Off Delay Time<br>~~ee~~<br>~~en~~|–––<br>~~ee~~<br>~~nel~~|48<br>~~ee~~<br>~~nel~~|–––<br>~~nel~~|||
|tf<br>ee<br>~~ne~~|Fall Time<br>~~ee~~<br>~~en~~<br>|–––<br>~~ee~~<br>~~nel~~<br>|53<br>~~ee~~<br>~~nel~~<br>||–––<br>~~nel~~<br>||||
|LD<br>~~ne~~<br>~~[Fe~~|Internal Drain Inductance<br>~~en~~<br>~~tt~~<br>~~[Fe~~|–––<br>~~nel~~<br>~~tt~~<br>~~[Fe~~|~~nel~~<br>~~tt~~|<br>~~[Fe~~|–––<br>~~nel~~<br>|<br>~~[Fe~~|nH<br>~~[Fe~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~e~~|
|LS<br>~~ne~~<br>~~[Fe~~|Internal Source Inductance<br>~~en~~ <br>~~tt~~<br>~~[Fe~~|–––<br> ~~nel~~<br>~~tt~~<br>~~[Fe~~<br>ee|~~nel~~<br>~~tt~~|<br>~~[Fe~~|–––<br>~~nel~~<br>|<br>~~[Fe~~|nH<br>~~[Fe~~||
|Ciss<br>~~[Fe~~|Input Capacitance<br>~~[Fe~~<br>~~ee~~|–––<br>~~[Fe~~<br>~~ee~~<br>ee|3210<br>~~[Fe~~<br>~~ee~~|–––<br>~~[Fe~~<br>~~ee~~|pF<br>~~[Fe~~<br>~~©~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~e~~<br>~~©~~|
|Coss|Output Capacitance|–––<br>ee|690|–––|||
|Crss<br>a~~ee~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~©~~|–––<br>~~ee~~<br>~~©~~|140<br>~~ee~~<br>~~©~~|–––<br>~~ee~~<br>~~©~~|||
|EAS<br>~~es~~|Single Pulse Avalanche Energy<br>~~©~~|––– 1180<br>~~©~~|1180<br>~~©~~|320<br>~~©~~|mJ<br>~~©~~|IAS= 50A, L = 260µH<br>~~©~~|



## **Source-Drain Ratings and Characteristics** 

- Notes: @@ Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) © This is a typical value at device destruction and represents operation outside rated limits. 

- Starting TJ = 25°C, L = 260µH 

- R @© G = 25 Ω , IAS = 50A, VGS =10V (See Figure 12) This is a calculated value limited to TJ = 175°C . @ Calculated continuous current based on maximum allowable 

- © ISD ≤ 50A | di/d ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C junction temperature. Package limitation current is 75A. 

© This is a typical value at device destruction and represents operation outside rated limits. 

- Calculated continuous current based on maximum allowable 

junction temperature. Package limitation current is 75A. 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>BOTTOM 5.0V4.5V | ff<br> 100<br>t e LI<br>G7 ttt 4.5V LL<br> 10<br>oS ee<br>PETER ATT aia<br>20µs PULSE WIDTH<br>PLTer e") T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics<br> 1000 SS<br>Pee<br>a a<br>FLL T  = 25  CJ ° pap=an<br>PT<br>| TT | Leer T  = 175  CJ ° a<br>TT AT |<br> 100 ERASE SEES<br>| f7AL | | ET dT dT dT | TT Tt<br>PARR<br>V      = 25VDS<br>E E} 20µs PULSE WIDTH<br> 10<br>4 5 6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V a|<br>1 Sal<br> 100<br>SG  2<br>4.5V<br>a) ee eel<br>ey A e l<br>20µs PULSE WIDTH<br> 10 Gy a" T  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>3.0<br>ID = 84A<br>a eee<br>2.5 rTPt tTTPtT tTeryet ETtt tt el<br>2.0<br>PE tee eT ET A<br>PTT TTT ty TY<br>1.5 Het<br>1.0<br>| he<br>0.5<br>Tt tt tt tt Tt Tt<br>0.0 EEEEEEEEEEEPET tT ee [et]] VGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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6000<br>T _T VGS   = 0V,       f = 1 MHZ 20<br>Ciss    = Cgs + Cgd,   Cds    SHORTED ID = 50A<br>5000 Crss    = Cgd  VDS = 48V<br>= Coss   = Cds  e + Cgd 16 TT VDS = 30V T TT<br>4000 a Ciss HY VDS = 12V tH<br>= St ont ee e a<br>12<br>3000<br>P RR TTT Hf<br>Coss<br>2000 SN ~] OT) = 8 RAEYA<br>N C ell TT BATT<br>1000 Crss<br>g en: Se 4 ap==— 40n0nnnn<br>SOI Sy AE<br>0 P RT foe FOR TEST CIRCUIT<br>1 10 100 SEE FIGURE       13<br>0 Viti til<br>VDS, Drain-to-Source Voltage (V) 0 20 40 60 80 100 120 140<br>Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>a aac n e<br> 100 | | rill<br>T  = 175  CJ °<br>= || AAge] 100 P9 901i)ear SN<br>es es A S S...aE<br>100µsec<br> 10<br>{| fy ft | | a eeeee<br>afpa T  = 25  CJ ° ee 10 TIS CT 1msec<br> 1<br>= = > na Tc = 25°C<br>4} meet eer<br>Tj = 175°C 10msec<br>0.1 | | a —}- V      = 0 V GS 1 es Single Pulse Lyeens n mille<br>0.0 0.6 1.2 1.8 2.4<br>V     ,Source-to-Drain Voltage (V)SD 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100<br>LIMITED BY PACKAGE<br>80<br>aaa aa Ves D.U.T. |<br>oo Ro | . -<br>60<br>SRE RNEEEEEE<br>POPPE os ≤ 1<br>≤ 0.1 %<br>40<br>pit it tt | NIUE Duran<br>PLE EE ENA "<br>SRR RAY Fig 10a. Switching Time Test Circuit<br>20<br>VDS<br>90%<br>pitt titty TyTN TTT<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>EERE 10% /\\ OV<br>Fig 9.   Maximum Drain Current Vs. VGS<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

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 1 SSeesee Se Os sOeecdeeeee<br>D = 0.50<br>p erme ttt<br>eA<br>S 0.20 e2 ee<br>0.1 0.10<br>Ca)<br>a_i<br>a 0.05 ee PDM<br>[eee 0.02 SS SINGLE PULSE ae ene0 ee eee t1<br>0.01 (THERMAL RESPONSE) t2<br>= a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>am 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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800<br>ID<br>TOP 20A<br>35A<br>BOTTOM 50A<br>SAPNN e<br>600 APNN pt<br>GaNeee eee eee<br>400<br>\ \<br>aNNONEaNNONEaNaN<br>200 PANINI fo<br>CSSASWpt<br>pt | SSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>TOP 20A<br>35A<br>BOTTOM 50A<br>VDS L DRIVER 600 SAPNN pt e<br>RG D.U.T +<br>- [V][DD]<br>“ IAS A 400 GaNeee eee eee<br>20VVGS JL \ \<br>tp 0.01 Ω<br>Fig = WN aNNONEaNNONEaNaN<br>12a. Unclamped Inductive Test Circuit 200 PANINI fo<br>V(BR)DSS SW<br><— tp CSSASWpt | SSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>/ / \ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>ee Same Type as D.U.T. |<br>|<br>|<br>50K Ω !<br>|<br>12V .2 µ F<br>QG .3 µ F<br>—— Z<br>+<br>Ves BO | D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>vam = |<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   -<br>@ •   D.U.T. - Device Under Test<br>> Isp controlled by Duty Factor "D"<br>*Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>[<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% [ ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789 INTERNAT IONAL PART  NUMBER<br>AS S EMBLED ON WW 19, 2000IN THE AS S EMBLY LINE "C" RECTIFIERLOGO TORIRF1010019¢<br>17 89 DATE CODE<br>Note: "P" in as sembly line pos ition AS S EMBLY YEAR 0 =  2000<br>indicates  "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2010 

www.irf.com 

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---

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