# Power MOSFET, N Channel, 100 V, 97 A, 7200 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2709875/)

**URL**: https://novapart.co/products/IRF100B202/power-mosfet-n-channel-100-v-97-a-7200-ohm-to
**SKU**: IRF100B202
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5810
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET, HEXFET |
| Qualification | - |
| Power Dissipation | 221W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 97A |
| Drain Source On State Resistance | 7200µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709875/)

## ~~TOR Rectifier~~ 

## Strong _IR_ FET™ IRF100B202 ~~pe~~ 

HEXFET[® ] Power MOSFET 

## **Application** 

- Brushed Motor drive applications 

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BLDC Motor drive applications  D VDSS  100V<br>Battery powered circuits<br>Half-bridge and full-bridge topologies   RDS(on) typ. 7.2m <br>Synchronous rectifier applications  G<br>            max  8.6m <br>Resonant mode power supplies<br>OR-ing and redundant power switches  S ID (Silicon Limited)  97A<br>DC/DC and AC/DC converters  ==<br>DC/AC Inverters<br>Benefits  S<br>D<br>Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness  G<br>Fully Characterized Capacitance and Avalanche SOA  TO-220AB<br>Enhanced body diode dV/dt and dI/dt Capability    IRF100B202<br>Lead-Free, RoHS Compliant, Halogen-Free<br>G  D  S<br>Gate  Drain  Source<br>ee<br>Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>IRF100B202  TO-220  Tube  50  IRF100B202<br>25 100<br>ID = 58AD = 58A= 58A<br>80<br>A Pf<br>20<br>| tf<br>TJ = 125°CJ = 125°C= 125°C 60<br>15 AP] INQ<br>40<br>10 T J  = 25°C<br>20<br>AU PSE<br>5 0 ERR<br>LE [[ACee+Ee]] oN<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant, Halogen-Free 

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25<br>ID = 58AD = 58A= 58A<br>A<br>20<br>TJ = 125°CJ = 125°C= 125°C<br>15 AP]<br>10 T J  = 25°C<br>AU<br>5<br>LE [[ACee+Ee]]<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On– Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   August 18, 2014 ~~Ie~~ 

IRF100B202 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V|97|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|68||
|IDM|Pulsed Drain Current|380||
|PD @TC= 25°C|Maximum Power Dissipation|221|W|
||Linear DeratingFactor|1.5|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)|300||
||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||



## **Avalanche Characteristics** 

|EAS (Thermally limited)|SinglePulseAvalancheEnergy |189|mJ|
|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|292||
|AS (Thermally limited)<br>EAS (tested)|Single Pulse Avalanche Energy  Tested Value|217||
|IAR<br>AS (tested)|Avalanche Current|See Fig 15, 16, 23a, 23b|A|
|EAR|Repetitive Avalanche Energy||mJ|



|**Thermal Resistance**||||||||
|---|---|---|---|---|---|---|---|
|**Static @ TJ = 25°C (unless otherwise specified)**<br> **Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.68<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>°C/W<br>~~————a~~||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**||**Units**<br>**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|100|–––|–––||V<br>VGS= 0V,ID= 250µA|||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|0.10|–––||V/°C<br>Reference to 25°C, I|Reference to 25°C, ID= 5mA|= 5mA|
|RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>7.2<br>8.6<br>m<br>VGS= 10V,ID= 58A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS =VGS, ID =150µA||||||||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|20<br>250||µA<br>VDS=100V,VGS=0V<br>VDS= 80V,VGS= 0V,TJ=125°C|||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100||nA<br>VGS= 20V<br>VGS= -20V|||
|RG<br>Gate Resistance|–––|2.4|–––|||||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 0.113mH, RG = 50, IAS = 58A, VGS =10V. 

-  ISD  58A, di/dt  1316A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

-     Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 24A, VGS =10V. 

- This value determined from sample failure population, starting TJ =25°C, L= 0.113mH, RG = 50, IAS =58A, VGS =10V. 

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IRF100B202 ~~[~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||||
|---|---|---|---|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max. Units**<br>gfs<br>Forward Transconductance<br>123<br>–––<br>–––<br>S<br>~~a~~<br>~~In~~<br>~~Ts~~<br>~~I OO (OO~~|**Max. Units**<br>**Conditions**<br>VDS= 10V,ID=58A<br>~~(OO~~|||
|Qg<br>Total Gate Charge<br>–––<br>77<br>116||ID= 58A||
|nC<br>Qgs<br>Gate-to-Source Charge<br>–––<br>20<br>–––<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>23<br>–––<br>Qsync<br>Total Gate Charge Sync.(Qg–Qgd)<br>–––<br>54<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>11<br>–––<br>ns<br>tr<br>Rise Time<br>–––<br>56<br>–––<br>td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>~~ee~~<br>~~GO~~<br>~~es~~<br>~~a~~<br>~~eeen~~<br>~~es~~||VDS= 50V<br>VGS= 10V<br>VDD= 65V<br>ID= 58A<br>RG= 2.7||
|tf<br>Fall Time<br>–––<br>58<br>–––<br>Ciss<br>Input Capacitance<br>–––<br>4476<br>–––<br>pF<br>Coss<br>Output Capacitance<br>–––<br>319<br>–––<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>154<br>–––<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>355<br>–––<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>385<br>–––<br>~~—en ~~i<br>~~—~~<br>~~|rr—i—i—~s~~<br>~~eets~~<br>~~ID I (ers~~||VGS= 10V<br>VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,  See Fig.5<br>VGS= 0V, VDS = 0V to 80V<br>VGS= 0V,VDS = 0V to 80V||
|**Diode Characteristics**||||
|**Symbol**<br>**Parameter **<br>**Min.**<br>**Typ. **<br>**Max.Units**||**Conditions**||
|IS<br>Continuous Source Current<br>–––<br>–––<br>97<br>A<br>(Body Diode)<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>380<br>(BodyDiode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>–––<br>51<br>–––<br>ns<br>–––<br>58<br>–––<br>Qrr<br>Reverse Recovery Charge<br>–––<br>105<br>–––<br>nC<br>–––<br>133<br>–––<br>IRRM<br>Reverse Recovery Current<br>–––<br>3.7<br>–––<br>A<br>dv/dt<br>Peak Diode Recoverydv/dt<br>–––<br>28<br>–––<br>V/ns T<br>~~ee~~<br>~~a~~<br>~~re rs ts ts~~<br>~~a~~<br>~~rs tI Ss I~~<br>~~ESS~~<br>~~oo|~~<br>~~eees~~<br>~~ts es es~~||MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>TJ= 25°C,IS= 58A,VGS= 0V<br>TJ =25°CVDD= 85V<br>TJ =125°CIF= 58A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C<br>V/ns TJ= 175°C,IS=58A,VDS= 100V<br>D<br>S<br>G||
|3<br>www.irf.com  © 2014 International Rectifier <br>Submit Datasheet FeedbackAugust 18, 2014||||



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IRF100B202 ~~Lo~~ 

## ~~IR~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 4.5V 100 5.0V 4.5V<br>BOTTOM 4.0V BOTTOM 4.0V<br>4.0V<br>10 10<br>4.0V<br>60µs PULSE WIDTH  60µs  PULSE WIDTH<br>1 ett Tj = 25°C 1 Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 3.0<br>ID = 58A<br>VGS = 10V<br>2.5<br>100<br>Ye \/<br>GnnPzan | HER<br>2.0<br>10<br>ET TJ = 175°C TJ = 25°C 1.5 ee<br>1<br>He 1.0<br>VDS = 50V<br>60µs PULSE WIDTH<br>0.1 0.5<br>1 2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>Dimes Err TT<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 58A<br>C Crss  oss    = C = Cds gd + Cgd 12 VDS= 80V<br>10 V DS = 50V<br>10000 VDS= 20V<br>Ciss 8<br>Se Se 6 a An<br>1000 Coss<br>4<br>C rss 2<br>100 cS 0 FRE<br>0.1 1 10 100 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

Gate-to-Source Voltage 

4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   August 18, 2014 ~~a~~ 

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IRF100B202<br>___..._______—s—<br>1000 1000 OPERATION IN THIS AREA<br>I@R LIMITED BY R DS(on)<br>100<br>100µsec<br>TJ = 175°C 100<br>TJ = 25°C<br>10<br>1msec<br>10<br>10msec<br>1<br>Tc = 25°C DC<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>EE 1 AY<br>0.1<br>0.1 1 10 100<br>0.0 0.5 1.0 1.5 2.0<br>VDS, Drain-to-Source Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>2.0<br>130<br>Id = 5.0mA<br>1.6<br>120<br>1.2<br>nat<br>110<br>0.8<br>ett<br>100<br>0.4<br>ATH 0.0<br>90<br>0 20 40 60 80 100 120<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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40<br>VGS = 5.0V<br>35 VGS = 5.5V J}| de<br>VGS = 6.0V<br>VGS = 7.0V<br>30 VGS = 8.0V Nn<br>VGS = 10V<br>25 NG<br>20<br>CONAZR<br>15 P| |SK<br>10<br>a==4Ne<br>—Tres<br>5<br>0 20 40 60 80 100 120<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On– Resistance vs. Drain Current 

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~~TOR~~ 

IRF100B202 ~~Lo~~ 

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1<br>D = 0.50<br>0.20<br>Cen<br>0.1<br>0.10<br>ee uisea= itilll<br>| 0.05 Iar<br>0.02<br>0.01 #2 MLA A a<br>0.01 oe<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 elon 1E-005 vy 0.0001 LI 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche<br>100 re pulsewidth, tav, assuming  Tj  = 150°C and<br>Tstart =25°C (Single Pulse)<br>Sa 0.01 ea Ly<br>10 EP.Ail 0.05 cnt Pomme<br>0.10<br>Snips eS men<br>jan ell<br>1<br>CST Cn<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>PTE PETITE<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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200<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 58A 1.Avalanche failures assumption:<br>150 NO Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>Saxe<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>100<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>AS 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>LINN 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>50  increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>UTES NA<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRF100B202 ~~TT~~ 

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4.0<br>3.5<br>ESS SREEEE<br>3.0<br>PSS PRA<br>2.5<br>ttt SSNS<br>2.0<br>ID = 150µA IZaNSE<br>ID = 250µA<br>1.5 I D  = 1.0mA<br>AT || N<br>ID = 1.0A<br>TLLLN<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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30<br>IF = 39A<br>25 VR = 85V<br>TJ = 25°C BREE<br>20 T J  = 125°C<br>BERD<br>15<br>Raean<br>10<br>Sne>cdnnn<br>5<br>ett<br>0 GRRREEEEE<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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25<br>IF = 58A<br>VR = 85V<br>20<br>TJ = 25°C<br>TJ = 125°C<br>TE<br>15<br>eae<br>10<br>pec<br>5<br>PZAnRRna<br>(nRRRREEE<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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1600<br>IF = 39A<br>VR = 85V<br>1200 T J = 25°C<br>TJ = 125°C<br>TTF<br>nev<br>800<br>~~<br>400<br>Eex<br>0 ezaenill<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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1600<br>IF = 58A<br>VR = 85V<br>1200 T J = 25°C<br>TJ = 125°C<br>ste<br>800<br>Wg<br>400<br>TET<br>b ert TTT<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   August 18, 2014 ~~SSTO~~ 

~~IéaR~~ 

IRF100B202 ~~[~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


**==> picture [17 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp > }<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

www.irf.com © 2014 International Rectifier 

Submit Datasheet Feedback                   August 18, 2014 

8 

IRF100B202 ~~LT~~ 

## ~~IR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

**==> picture [252 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   August 18, 2014 ~~=°°””®©|©}=uvLTT~~ 

~~16aR~~ 

IRF100B202 ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2014 International Rectifier Submit Datasheet Feedback                   August 18, 2014 ~~_~~ 

10 ~~Lc~~ 

10 www.irf.com © 2014 International Rectifier 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRF100B202/power-mosfet-n-channel-100-v-97-a-7200-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irf100b202/mosfet-n-ch-100v-97a-to-220ab/dp/2709875)
---

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