# Power MOSFET, N Channel, 80 V, 101 A, 4300 µohm, TTFN, Surface Mount
**URL**: https://novapart.co/products/IQE050N08NM5CGATMA1/power-mosfet-n-channel-80-v-101-a-4300-ohm-ttfn
**SKU**: IQE050N08NM5CGATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8400
**Stock**: 1000+
**Lead Time**: 134 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 9Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 100W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0043ohm |
| Transistor Case Style | TTFN |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 101A |
| Drain Source On State Resistance | 4300µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3886386RL/)
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IQEO50NO8NM5CG
## OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V
## Features
¢ Optimized for synchronous rectification
- ¢ Very low on ~~-r~~ esistance Ros(on)
- 100% avalanche tested
- Superior thermal resistance
- « N ~~-c~~ hannel, normal level
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- ¢ Pb ~~-f~~ ree lead plating; ROHS compliant
* Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1
## Product validation
Fully qualified according to JEDEC for Industrial Applications
## Table 1 Key Performance Parameters
~~Ce~~
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rain
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Pin 1-4
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(2)
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@ ROHS
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~~IQE050NO8NM5CG~~
~~PG-TTFN-9-1~~
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oooscs =|ed
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Final Data Sheet
1
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V
IQEO50NO08NM5CG
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1 Maximum ratings at Ta=25 °C, unless otherwise specified
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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|2_—/|Maximum|ratings|
|m|aramet|er|symbol|Note/|Test|Condit|
|ymbo|Min.|_||ote /|Test|Condition|
|Typ.|[Max._|
|101|Ves=10|V,|Tc=25|°C|
|Continuous|drain|current”|Ib|71|A|Ves=10|V,|Tc=100|°C|
|16|Ves=10V, Ta=25°C,|Rinsa=60°|C/W»|
|Avalanche|energy,|single|pulse”)|less|=|sest84|ms|Ip=20|A,|Res=25|Q|
|er|100|Tc=25|°C|
|.|°|IEC|climatic|category;|DIN|IEC|68|-1|:|
|Operating|and|storage|temperature|-55|-|||175|Cc|55/175/56|
|2|Thermal|characteristics|
|Table|3_—|Thermal|characteristics|
|m|aramet|er|Symym|bo|l|jaeMin.|||it|N|o|te|I|T|e|stst|ConditionCondit|
|Typ.|[Max._||
|Thermal|resistance,|junction|-|case,|°|
|Device|on|PCB,|°|
|6 cm? cooling area|a|
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> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 0,
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V
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IQEO50NO8NM5CG
## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified
## Table 4 Static characteristics
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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.aeTye.|(Max.||it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|Veross|[80||-|[-|[vi|Ves=0|V,|lb=1|mA|
|Gate|threshold|voltage|Vos= Ves,|lo=49|WA|
|Zero|gate|voltage|drain|current|ss|||A|100|Ve=80|y|yaa,|vr|1495|So|
|Gate-source|leakage|current|Hess||e|[10|100,|[nA|Ves=20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Rosny|et|a|VeeeV|ieee|A|
|Transconductance|lo|=|(séd(3|ids||Vos|22|/p|Rosionymax,|[b>=45|A|
|Table|5|Dynamic|characteristics|
|P|aramet|er|Symym|bo|l|jaeMin.|_|Typ.|[Max.||it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance”)|Css||e|||2200|/2900|Ves=0|V,|Vos=40|V,|f=1|MHz|
|Reverse|transfer|capacitance”|ICs|[sat|[37|pr|Ves=0|V,|Vos=40|V,|H1|MHz|
|sext™|T.|
|ext|I.|
|Table|6|Gate|charge|characteristics”)|
|p|aramet|er|Syy|mbo|l|Min.NON|Untote /||TeTe t|s|t|ConditionCondit|
|Gate|Tye.|Max.|||
|to|source|charge|las||=|ft.0|[=|Jn|||Vo0=40|V,|Io=20|A,|Ves=0|to|10|V|
|Gate|charge|at|threshold|laa|fe|ez|[en|Vop=40|V,|Ip=20|A,|Ves=0|to|10|V|
|Gate|to|drain|charge”|ae||=(8813Jn|||Vo0=40|V,|Io=20|A,|Ves=0|to|10|V|
|Switching|charge|Qn|fe|ft2||e||n[Von=40|V,|Ip=20|A,|Vos=0|to|10|V|
|Gate|charge|total’)|lasses.|[43.2|[nc|||Vov=40|V,|Ip=20|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Veen|[>|sd|Vop=40|V,|Ip=20|A,|Ves=0|to|10|V|
|Gate|charge|total,|sync.|FET|Quem|[es|f2.z|[-|[no|Vps=0.1|V,|Ves=0|to|10|V|
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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet
4
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V
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## 4 Electrical characteristics diagrams
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Final Data Sheet
6
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V IQEO50NO8NM5CG
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Final Data Sheet
7
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
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Fin arate Sheett
OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V
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## IQEOSONO8NM5CG
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Diagram 13: Avalanche characteristics Diagram 14: Typ . gate charge
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Diagram 15: Drain - source breakdown voltage Diagram Gate charge waveforms
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Final Data Sheet
9
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
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OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V IQEO50NO08NM5CG
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## Figure 2. Outline Boardpad (PG ~~-T~~ TFN- ~~9-1~~ ), dimensions in mm
Final Data Sheet
11
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
OptiMOS™ 5 Power- ~~T~~ ransistor, 80 V IQEO50NO8NM5CG
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## Revision History
## IQEO50NO8NM5CG
## Revision: 2021 ~~-0~~ 4 ~~-2~~ 6, Rev ~~.~~ 2.0
|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~04~~-~~26||||Release|||offinalversion|||||||||
Trademarks All referenced product or service names and trademarks are the property of their respective owners.
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com
Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~
The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 26
## Links
- [View this product on Novapart](https://novapart.co/products/IQE050N08NM5CGATMA1/power-mosfet-n-channel-80-v-101-a-4300-ohm-ttfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/iqe050n08nm5cgatma1/mosfet-n-ch-80v-101a-ttfn-9/dp/3886386RL)
---
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