# Power MOSFET, N Channel, 30 V, 253 A, 650 µohm, TTFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3886381RL/)

**URL**: https://novapart.co/products/IQE008N03LM5CGATMA1/power-mosfet-n-channel-30-v-253-a-650-ohm-ttfn
**SKU**: IQE008N03LM5CGATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7930
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 9Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Power Dissipation | 89W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 89W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 650µohm |
| Transistor Case Style | TTFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 253A |
| Drain Source On State Resistance | 650µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3886381RL/)

om Cinfineone@ 

IQE008NO3LM5CG 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

## Features 

¢ Optimized for high performance SMP%S, e ~~.~~ g ~~.~~ sync ~~.r~~ ec ~~.~~ ¢ Very low on ~~-r~~ esistance Ropsion) @ Ves=4 ~~.~~ 5 V 

- 100% avalanche tested 

- Superior thermal resistance 

- N ~~-~~ channel 

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- ¢ Pb ~~-f~~ ree lead plating; ROHS compliant 

- Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

## Table 1 Key Performance Parameters 

~~a~~ Qa(0V. ~~4~~ .5V) ~~isis~~ 

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~~IQE008NO3LM5CG PG-TTFN-9-1~~ 

~~oososcs =—CofeC~~ 

Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

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IQE008NO3LM5CG 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

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1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Table|2_—/|Maximum|ratings|
|m|aramet|er|symbol|Note/|Test|Condit|
|ymbo|Min.|Typ.|[Max._|ote /|Test|Condition|
|253|Ves=10|V,|Tc=25|°C|
|Continuous|drain|current”|Ib|160||A|Ves=10|V,|Tc=100|°C|
|27|Voes=4.5V,|Ta=25°C,|Rinsa=60°C/W»|
|Pulsed|drain|current®)|Howse|[>|fe|1012|Ta=25|°C|
|Avalanche|energy,|single|pulse”)|less|=|s-sdes(50|ms|Ip=20|A,|Res=25|Q|
|er|89|Tc=25|°C|
|.|°|IEC|climatic|category;|DIN|IEC|68|-1|:|
|Operating|and|storage|temperature|-55|-|||150|Cc|55/150/56|

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## 2 Thermal characteristics 

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Table 3_— Thermal characteristics<br>m aramet er Symym bo l jaeMin. | it N o te I T e stst ConditionCondit<br>Typ. [Max._|<br>Thermal resistance, junction - case, °<br>Device on PCB, °<br>6 cm? cooling area a<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 2 ~~.~~ 0, 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

IQE008NO3LM5CG 

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## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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|||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|symbolymbo!mbo|in.|typ.|Max.|||Noteote|//|TestTest|ConditionCondit|
|Drain-source|breakdown|voltage|Veross|[30||-|[-|[vi|Ves=0|V,|lb=1|mA|
|Gate|threshold|voltage|Vos= Ves,|fo=250|WA|
|Zero|.|0.1|1.0|Vos=24|V,|Ves=0|V;,|Tj=25|°C|
|gate voage chain current|eee|ee Vos=24 V, Vas=0 V,|Ti=125 °C|
|Gate-source|leakage|current|Hess||e|[10|100,|[nA|Ves=20|V,|Vos=0|V|
|.|0|.|65|||0.|85|Ves=10|V,|Ib=20|A|
|Drain-source|on-state|resistance|own|(885085|Ima|||Vos=4.5|V,|In=20|A|
|Transconductance|lo||-|fro||-|js||||Vos|22|/p|Rosionymax,|!>=20|A|
|Table|5|Dynamic|characteristics|
|P|aramet|er|Symym|bo|l|jaeMin.|_|Typ.|[Max._it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance’|ICss|——'|-—-—|-|[4400_[5700|Ves=0|V,|Vos=15 V,|f=1|MHz|
|Output|capacitance”|ICs||-——-|4100._|[1400|Ves=0|V,|Vos=15|V,|f=1|MHz|
|Reverse|transfer|capacitance”|Css|[es|tt0.s[190— pF|Ves=0|V,|Vos=15|V,|H1|MHz|
|Turn-on|delay|time|ty|86|fia|peseae|V,|Ip=20|A,|
|ise|ti|Vpp=15|V,|Ves=4|.|5|V,|Ip=20|A,|
|.|Vop=15|V,|Ves=4|.|5|V,|lp=20|A,|
|.|Vop=15|V,|Ves=4.5|V,|lp=20|A,|
|Table|6|Gate|charge|characteristics”)|
|Gatep|aramet|er|Syy|mbo|l|Min.NONTye. [Max.Untote /||TeTe t|s|t|ConditionCondit|
|to|source|charge|las||e|ft|[-||n|||Vo0=15|V,|Ib=20|A,|Ves=0|to|4.5|V|
|Gate|charge|at|threshold|lam|fe|fee|nc|Vpop=15|V,|Ip=20|A,|Ves=0|to|4.5|V|
|Gate|to|drain|charge”|ae||e|6|[9|fn|||Vo0=15|V,|Io=20|A,|Ves=0|to|4.5|V|
|Switching|charge|Qn|||to.|=|nC|[Von=18|V,|1p=20|A,|Vos=0|to|4.5|V|
|Gate|charge|total’)|lasses|[37|nc|Voo=15|V,|Ip=20|A,|Ves=0|to|4.5|V|
|Gate|plateau|voltage|Veen|[>|f2|Vop=15|V,|Ip=20|A,|Ves=0|to|4.5|V|
|Gate|charge|total|fe[et|(nc|||Voo=18|V,|10220|A,|Vocn0|to|10|V|

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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

IQE008NO3LM5CG 

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## 4 Electrical characteristics diagrams 

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100 TTTTITITIfrtfryryrerttlttf 280 rTTTITITITITITIfTfttlttl<br>ee A<br>O O a a a<br>a St |---|} —<br>2407 FP [NREPEEEPE]<br>@ eee yyy<br>IN<br> EEENEEEEEEEE E EEE | ~ REEERAEEEEEEEEES<br>TON eg aSS<br>TN<br>gt! | tt AP tT? tt ttThtt | “Eee} | | | | | |PSS| | Kt tT tT ft tt<br>2 FrTrTrrrinyrrerere ey fy roof | | ff fF] fp IN pe feb<br>+4444\<br>3 NH SH SJE eee<br>@ - A<br>Ettit itt iN tttt gp REN<br>att ||PEERes ttt| | | tt| hc ESSENCE | hd|ttcd EU INRETTTtT ttTTtf |eSTFTrTrrrrrrryryeeSeEEEEEEEEEEENERrTyeyTT<br>20 aa p{tttta ff ft fy ft tt At<br>PP a ee OO<br>Pt te te ed dete pe pe de pyKTNA a OOeeee<br>ott | 1 | t | | | | | | | TUN of ET TT try ry TT tty ry ir<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tc [°C] Tc [°C]<br>10 SS SSS 0  oo<br>SS SSS Ss ees [sin g le putse fT<br>a ee i —- 0 . 01 2<br>1° LLae ||e t 0.02a a<br>SS Se eee eee {ome 1a<br>es eS Ft ps Cott<br>roe TeoCENSCONIE| NASIR FC at e i | LLU esate te<br>SCT | sge cm I ae<br>SEE<br>zf= LTHMENNENUIENCTLOMHesSENSE Je«1 HeeSr ee all<br>G0 ro NN ENTTIEN ET 2 Capea re<br>SeeRN<br>Xt msNEtt NOE rte TH TT<br>vo LLNWN TET 10 "  4<br>Ss a eH A} 4 Lftt<br>r o KLE NAT Sg<br>SSeeSEE SH NEEee ee ETM ETM IIE TTT ET<br>io ? =LET F]oT [TTT] ETTTT 10 g? e [E][T][I][TN][I][E] EET [V][TT] TTT [I][NE] EE<br>10 " 10° 10! 10? 10 ° 10 + 10 ° 10 7 10 7 10°<br>Vos [V] t [s]<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V IQEO08NO3LM5CG 

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Diagram 5: Typ. output characteristics Diagram 6: Typ . drai n- source on resistance<br>1200 CA ea 2.00 |<br>“PPP Pt0v AU dyAURSSSRRRRSRRREREE<br>SSS00/SGGGG0) d/o) Gene /<br>0) Ps 1.75 |<br>1000 LOLLY FEE eee y<br>PereSSSS887 0yy/i) SRA RRSRSRERE>COCOane Hn<br>SOE 4 VE ee rT 3.5 Vi 1.50<br>COCOAeee So<br>soo LOCC Ceeee<br>POC CLL LACE<br>SSG00 0/454 1.25 Too<br>-_ COA fs TELL Pes<br>COOees} TTT TL<br>2 oA =zsé S e 4vi<br>COCA) B Cece sv<br>ECOWAS] ® 975 RR R<br>aoo HATvo TT T<br>I<br>COA CCC eTLt 1_| 0.50 10V<br>Se) [/dusauensonec!] / > cransaasstsia MmomaUTOTOTOOTATONEATOTOOTOTONEESSSeT<br>Paar<br>500 ZO ev<br>WCC eT<br>D £0) > ans eeeeeeeeeeeeeeeee 0 . 25<br>)Pas<br>|ZS<br>A SSS 0 . 00<br>0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 0 100 200 300 400 500 600<br>Vos [V] bb [A]<br>Ip=f(Vos), T7=25 °C; parameter: Ves Rosvon)=f(/p), T=25 °C; parameter: Ves<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ . drai n- source on resistance<br>1200 TTTTTLITI TEE EEE ELL 2 . 4<br>| SEH EEE<br>PEEP Eee eee eee! ee<br>PEEP LTT TT TIPE TTT TT TTT yy TT YT I<br>ee EEEEEE 20 eR<br>PPP SRG08 ee<br>Se \\<br>ee PET TTT TIN ET TET EEE EEE ET<br>B00 EEEPPP EEE EEE HE EE] te EEEHEAHHH<br>a ee CCCCECARE<br>_ eee eee Pit TTT TV TNE<br>Zoo TT AL JE ee {TEU<br>8 EERE 8 Geet Ee<br>SSS SSS eee<br>Se LETT TTT TT RET TTT TT ET TT tT<br>400 EEE EEE EEEEEE |e HEH SEE<br>EERESee Ae TEP pep | Peso HE—_<br>PEEP Eee WEEE LTT TTT TTT TTT TT TT eT yy Tet YT<br>200 FEES RECEP CEE<br>PEPE Pisovcl AT TT S000Se<br>eePOEa 7fios-ct ootLILTITITTTTTttt tT titty tt tt |<br>0 1 2 3 4 5 0 2 4 6 8 10<br>Ves [V] Ves [V]<br>Ib=f(Ves), |Vos|>2|/o|Ros(onymax; parameter: T; Roscon)=f(Ves), [5=20 A; parameter: T;<br>Data Sheet 7 Rev . 2 . 0, 2021 -0 4 - 28<br>**----- End of picture text -----**<br>


Final Data Sheet 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

IQE008NO03LM5CG 

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Final Data Sheet 

8 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V 

IQE008NO3LM5CG 

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Diagram 13: Avalanche characteristics Diagram 14: Typ . gate charge<br>10° 10 y<br>= Poo TTT<br>ae eer 1 oot  SO rr<br>A oot oo pee<br>a ee ell 8 TTT TT TTT TTT TTT ye TT TT TT<br>- = J LT TTT TT TT tet TT TTT yet<br>stl NO Ww LIT TIT TT TTT TTT TT TT yet tt tT<br>Se 6 COCECCECCECCCC<br>a OS PT ELTEELELEELLELWATeTEL CCCELE LPL Ell<br>z STH S PTT CEE TTA<br>ee ee | N i n,n<br>2 | TTPUKE PNG) $0 Gee<br>BN MES AM sssesaaeycateteceatsteceate<br>A<br>A a Ee oeee<br>ee eel BRP A RERR<br>A So’LIA SSSRSSS 00000000000000088<br>ON TT ITT ttt TT TT TT TT TT ET TT Tt TT<br>40 ° Re op capesstetecssALLL TL I TIT iti t ttsteccasieacetit Tt et ett<br>10° 10! 10? 10° ) 10 20 30 40 50 60 70<br>tav [Ms] Qgate [NC]<br>Ing=f(tav); Res=25 Q; parameter: Tj start Ves=f(Qgate), />=20 A pulsed, 7j=25 °C; parameter: Vop<br>Diagram 15: Drain - source breakdown voltage Diagram Gate charge waveforms<br>“TTT TTT<br>32 ELLE fy<br>_ Q,<br>ELLE4<br>CEELO<br>_<br>E 31 VY<br>BboA aa<br>S 30 7<br>ELLO<br>oYACL ELLE<br>LEE<br>ACETAL |<br>- 80 - 40 ) 40 80 120 160<br>TPC]<br>PO<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

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Ome ( | n fi neon 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V IQE008NO3LM5CG 

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1 . 629<br>0.15 0.35<br>i”bd 11 0.3 - 8x 1.059 0.595<br>P| PD 0.975 03 Bae<br>[a VA EBay<br>° A ) A “| ° L INE...<br>a 6x 4x<br>4x 0 . 365<br>0 . 055<br>Pint opel 2x 10 A. 975<br>[| copper solder mask stencil apertures<br>All dimensions are in units mm<br>**----- End of picture text -----**<br>


## Figure 2. Outline Boardpad (PG ~~-T~~ TFN- ~~9-1~~ ), dimensions in mm 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 

OptiMOS™ 5 Power- ~~T~~ ransistor, 30 V IQE008NO3LM5CG 

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## Revision History 

## IQEOO8NO3LM5CG 

## Revision: 2021 ~~-0~~ 4 ~~-2~~ 8, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~04~~-~~28||||Release|||offinalversion|||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

12 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 4 ~~-~~ 28 



## Links

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- [Supplier page](https://es.farnell.com/infineon/iqe008n03lm5cgatma1/mosfet-n-ch-30v-253a-ttfn-9/dp/3886381RL)
---

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