# Power MOSFET, N Channel, 800 V, 17 A, 0.24 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2750420/)

**URL**: https://novapart.co/products/IPW80R280P7XKSA1/power-mosfet-n-channel-800-v-17-a-024-ohm-to-247
**SKU**: IPW80R280P7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2300
**Stock**: 200+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 101W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.24ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2750420/)

**IPW80R280P7** 

## **MOSFET** 

## **Features** 

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**----- Start of picture text -----**<br>
R DS(on) *E oss ;reducedQ,C g iss ,andC oss<br>DS(on)<br> R<br>(GS)th of 3V and smallest V (GS)th variation of<br>**----- End of picture text -----**<br>


## **Benefits** 

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**----- Start of picture text -----**<br>
Drain<br>Pin 2, Tab :<br>Gate<br>Pin 1 ’ 4<br>Source ;<br>Pin 3<br>**----- End of picture text -----**<br>


## **Applications** 

|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj=25°C|800||V||||
|RDS(on),max|0.28||Ω||||
|Qg,typ|36||nC||||
|ID|17||A||||
|Eoss @500V|4||µJ||||
|VGS(th),typ|3||V||||
|ESD class(HBM)|2||-||||
||||||||
|||**Package**||**Marking**|||
|IPW80R280P7||PG-TO 247||80R280P7||see Appendix A|



Final Data Sheet 

1 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.0,��2016-07-05 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|17<br>10.6|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|45|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|43|mJ|ID=2.2A; VDD=50V|
|Avalanche energy, repetitive|_E_AR|-|-|0.36|mJ|ID=2.2A; VDD=50V|
|Avalanche current, repetitive|_I_AR|-|-|2.2|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0to400V|
|Gate source voltage|_V_GS|-20<br>-30|-<br>-|20<br>30|V|static;<br>AC (f>1 Hz)|
|Power dissipation|_P_tot|-|-|101|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|150|°C|-|
|Mountingtorque|-|-|-|60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current|_I_S|-|-|12|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|45|A|TC=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|1|V/ns|_V_DS=0to400V,_I_SD<=3.6A,_T_j=25°C|
|Maximum diode commutation speed3)|dif/dt|-|-|50|A/µs|_V_DS=0to400V,_I_SD<=3.6A,_T_j=25°C|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction  - case|_R_thJC|-|-|1.2|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



> 1) Limited by Tj max. Maximum duty cycle D=0.5 

> 2) Pulse width tp limited by Tj,max 

> 3) _V_ DClink=400V;� _V_ DS,peak< _V_ (BR)DSS;�identical�low�side�and�high�side�switch�with�identical� _R_ G;� _t_ cond<2 µ s 

Final Data Sheet 

3 

Rev.�2.0,��2016-07-05 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|800|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.5|3|3.5|V|_V_DS=_V_GS,_I_D=0.36mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=800V,_V_GS=0V,_T_j=25°C<br>_V_DS=800V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage curent incl. zener<br>diode|_I_GSS|-|-|1|µA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.24<br>0.62|0.28<br>-|Ω|_V_GS=10V,_I_D=7.2A,_T_j=25°C<br>_V_GS=10V,_I_D=7.2A,_T_j=150°C|
|Gate resistance|_R_G|-|1|-|Ω|_f_=250kHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1200|-|pF|_V_GS=0V,_V_DS=500V,_f_=250kHz|
|Output capacitance|_C_oss|-|20|-|pF|_V_GS=0V,_V_DS=500V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|38|-|pF|_V_GS=0V,_V_DS=0to500V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|490|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0to500V|
|Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=400V,_V_GS=13V,_I_D=7.2A,<br>_R_G=4.7Ω|
|Rise time|_t_r|-|6|-|ns|_V_DD=400V,_V_GS=13V,_I_D=7.2A,<br>_R_G=4.7Ω|
|Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD=400V,_V_GS=13V,_I_D=7.2A,<br>_R_G=4.7Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=7.2A,<br>_R_G=4.7Ω|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|5|-|nC|_V_DD=640V,_I_D=7.2A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|15|-|nC|_V_DD=640V,_I_D=7.2A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|36|-|nC|_V_DD=640V,_I_D=7.2A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.5|-|V|_V_DD=640V,_I_D=7.2A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�500V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�500V 

Final Data Sheet 

Rev.�2.0,��2016-07-05 

4 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=7.2A,_T_f=25°C|
|Reverse recoverytime|_t_rr|-|1200|-|ns|_V_R=400V,_I_F=3.6A,d_i_F/d_t_=50A/µs|
|Reverse recoverycharge|_Q_rr|-|15|-|µC|_V_R=400V,_I_F=3.6A,d_i_F/d_t_=50A/µs|
|Peak reverse recoverycurrent|_I_rrm|-|24|-|A|_V_R=400V,_I_F=3.6A,d_i_F/d_t_=50A/µs|



Final Data Sheet 

Rev.�2.0,��2016-07-05 

5 

**IPW80R280P7** 

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**----- Start of picture text -----**<br>
10 [2]<br>100 µs 10 µs<br>1 µs<br>100 1 ms<br>a 10 [1] K 10 ms ON ENN XS<br>DC<br>80 H+} COAT SS<br>10 [0]<br>-—-_} \ +++\f- + — SZOl |ANNANNINNNTT<br>60<br>SN ee NS NTT<br>ee 10 [-1] INANE<br>40<br>———— [EF eee EEE NONE<br>10 [-2]<br>20 -—_-+__}_} —_}_\f- ENNNl<br>Pf Pr NT<br>0 A 10 [-3] PLT LETEEE<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS [V]<br>F P tot=f( T C) C I D=f( V DS T C D 0; parameters t p<br>10 [2] 10 [1]<br>100 µs 10 µs<br>ee 1 ms Sl i 1 µs FEE<br>10 ms<br>10 [1] ee)—— eeSS S|eet aTTeeHEa HH||<br>DC<br>10 [0]<br>Sressesesesce | CCI 0.5 Ii<br>10 [0] | NNUAL N UT SS Se eeian<br>x fh 0.2<br>0.1<br>——}}----—_} —}}-XA—A_}-+-NN ON TINGE S TanSATII TTT<br>0.05<br>10 [-1]<br>0.02<br>10 [-1]<br>0.01<br>single pulse<br>10 [-2] Nieff NP ee [SEH] EEE it<br>a | ||<br>FENN es<br>et a a a ||<br>10 [-3] FCeeCertlll 10 [-2] ETEELIA TUL EL<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**IPW80R280P7** 

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60 35<br>20 V 20 V<br>E [|] fff fb type HEREA  EEE EEE EE EEE |S<br>rErEPPeELeeee tele eee 10 V (| | | | | [| | | | [| [| | 7 TT J] 7 7] 10 V<br>EEE 8 V a 8 V<br>30<br>50 a 7 V ERC E EEE ee eee<br>gt feeg<br>6 V<br>Sg 25 TS 7 V<br>|i -[ i) Ea ; a Aoipe<br>40<br>neZ a epae See”ee”Zee 6 V<br>5.5 V<br>REC 7, A 20 LE Zo<br> EEeeet | SRR A a<br>5 V<br>30 5.5 V<br>=f DOG EB eef a<br>O e<br>15<br>PE Y/ 2<br>20 f e | S f 4.5 V<br>1Yyy |} Z tH 5 V OSFEEL EEEEEEEEEE oo<br>10<br>FEHR SEEEEEEE HS | 0 GERD JRE ERE<br>10<br>S O PCEEE 4.5 V | 5 GERACE eSEEEEEEEH<br>2 AR KOREEEE EEE EEE EEE<br>0 PERS a[ a ee eee | 0 TASCYrrrrrrrrtrrryryr Z eEeeeeeeeeeeeeeeeeeeeeeeeeE E LE EEEEtyr E EEERTryRcf<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS ); T j =25 °C; parameter: V GS I D=f( V DS ); T j =125 °C; parameter: V GS<br>I D I D<br>**----- End of picture text -----**<br>


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1.00 0.80<br>a<br>5 V 5.5 V a a<br>I} 0.70 a a<br>0.90 ee<br>6 V<br>aa<br>6.5 V aaYA<br>7 V 0.60<br>0.80 / / 10 V a A7 A<br>a YA<br>0.50<br>Y] a 9a YAA YAAA<br>0.70 98%<br>YW ee ee ee ee a my ey<br>0.40<br>Y), a a a A”<br>YY eea L,YA<br>0.60 typ<br>, Sf ip ee ee<br>0.30<br>YW) a a ol<br>0.50 Vt JA a ce<br>SIAL 0.20 a ea<br>UV sc<br>ELA A ce<br>i<br>a<br>0.40 0.10<br>0 10 20 30 40 -50 -25 0 25 50 75 100 125 150<br>I D [A] T j [°C]<br>R DS(on)=f( I D ); T j =125 °C; parameter: V GS R DS(on)=f( T j jy I D =7.2 A; V GS =10V<br>] Ω ] Ω<br> [<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**IPW80R280P7** 

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**----- Start of picture text -----**<br>
50 10<br>a 7y<br>25 °C<br>45 ===——— ==———S—Se 9 LEELEELEELEELEEf7/<br>40 rr 8 4,<br>a<br>35 7<br>pf — M/<br>——— J /<br>30 6 120 V<br>640 V<br>i 25 ———————— 5 TTT Jhy/<br>eS eee 150 °C oo<br>20 ———aa sfa SSA A | 4 ] TTV7<br>————<br>15 3<br>—————Fk SQ |<br>BS227 SSS Sa=— VEEL ELLE<br>10 A A GO 2 r,<br>5 se | A A SS 1 /<br>a Ak A |<br>Aa a A OOA<br>0 a as 0<br>0 2 4 6 8 10 12 0 10 20 30 40<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [2] A SS SS SS 50 a ( (<br>T 25 °C ESR —<br>125 °C<br>45<br>(= a FRRRRERRSSREEfF  SS ——————————<br>a | Se<br>40<br>/ 35 A,esf(a<br>10 [1]<br>ep 30<br>ee<br>NN Sa 25 ——————<br>PET TT Ta TE 20 —a,<br>——SS—S=S=s><br>ALLELE CC ( (<br>10 [0] TT OTO—O——=2=zI*=2ZZZ—>—=>—=—=_{_Z{—>Z==—aEXzX£:__ —ZD__ TT TTT TEESE] A,POTGC<br>15<br>arFrrerrery yer rere ee ty 10 aFf LT<br>PLT EEL PELL ELLE LLL ET 5 es<br>SS SS<br>a<br>10 [-1] FLEE| 0 PNTsO<br>0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150<br>V SD Vv] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**IPW80R280P7** 

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**----- Start of picture text -----**<br>
950 10 [4]<br>ee ee ee |———————————————————<br>ee A Ciss<br>900 10 [3]<br>TP _ SSSSSSSSSSSSSSSSS===<br>Pf of foe fp poya ———————<br>KF ty i | | | ce tT | hE | ThE rT rT TT<br>850 a 10 [2] NET EET TE EL TE Ey yy<br>oe F-} || | | wi fot {== = == == = = = S$ = = ===<br>Coss<br>SZ le ASS Eee<br>800 FOOa — 10 [1] ACSVETTEeS<br>a | TEE | | Pret<br>Sn a a 4 ><br>7 BREESE SSS<br>Crss<br>750 2 10 [0] SERP AT e ESSEr | | | | I<br>2 ee ——————<br>PP fF tp ft Pe] —— ———<br>a OO Ree<br>700 a 10 [-1] PTT ET TEE EEE TEP [TET]<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500<br>T j [°C] V DS Iv]<br>V BR(DSS)=f( T j )} I D =1mA C =f( V DS ); V GS =0 V; f =250 kHz<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 Dt J ~T Ty J JT J J JT TT Ty tT<br>a<br>r [| [ {| 7T J JT Jf Jf [ fT JT JT JT JT TT 7<br>( | ~[ [{[ 7— 7~— ~ [— 7~— ~— [ JT 7 [ JT JZ<br>7 r(| || [|[| [{[{ J~|| 7~—~— ~~ [—[~— 7~—7~— ~T~— [[ JTJT [|TT [[ JJ gfFf ||<br>( | [| [{ | 7~— ~ [— 7~— ~ [ JT 7 [ J /] |<br>rpa[|ee[ {| | J JT Jf Jt tT fT tT 0tT TY  AT<br>6 aa SSCN4<br>rp SS2<br>pr [| [ [| | J fT Jf Jt TT fT tT tT Y TT<br>rp [| [ {[ | TT J Jf T Jf Jf t Tt T TT tT T TATATT T l<br>5 (a| RS~— [A7 7— ~— ~— 7— ~— [ TY, [ JT JT |<br>( | [| [{ 7| 7~— ~ [— 7~— ~— [ TF | [ JT J |<br>— ( | [| [{ J7| 7~— ~ [— — ~— [ fT [ J Jf |<br>3 p of ft ft fF tf tf fT fT fT TAT fT ft ft ft<br>for} 4 rpa[| [| f Tt tT tT fT fT TAT tT oT yt UT UT<br>yr [| [ {| | JT JT J [TT YT tT TT JT fT 7<br>r [| [ {| -| J JT JT TAT TT tT TT fT 7<br>yr [| [ {| TT J TT [TT Ff TT TT tT tT fT TT<br>3 rprp [|[| [[ [|[| TTT JTJT JTTAT[TAT TTT fTfT tTtT tTtT fTtT TTTT<br>rp [| [ {| | JT wtf fT fT ft tT fT fT 7<br>( | [| [ | JAwyT ~— 7T -T [ JT 7T [ J JT |<br>Pp ot ft tT Taq fT tT tT tT ft tT<br>2 (|a| [| [Loweree| TTee[ ee| T—ee[ eeJT ee[| [ eeJT eeeJf |<br>ee a ee ee ee ee ee ee ee ee<br>ca(pt [ a{| 7T  eeJ JT Jf JT TT fT tT Ty tTee ee<br>1 a[Petyf ot tT[ fTfT tTtT tTtT TTtT tU T ee T ee<br>Fe<br>0 |yo | ~—RS[~—CN7 7~ ~ ~— 7— ~T [ JT 7OC[T JT JT |<br>0 100 200 300 400 500 600 700 800<br>V DS<br>E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Test�Circuits** 

## **Table�8�����Diode�characteristics** 

**==> picture [509 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V ,I<br>R g 1 VDS(peak) VDS<br>VDS<br>V DS IF tF trr tS<br>R g  2 dIF / dt<br>I F t<br>QF QS 10 %Irrm<br>R g 1 = RI F g  2 Irrm dIrr / dt tQrrrr =t= QF +tF S+QS<br>**----- End of picture text -----**<br>


## **Table�9�����Switching�times** 

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**----- Start of picture text -----**<br>
Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


## **Table�10�����Unclamped�inductive�load** 

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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

Rev.�2.0,��2016-07-05 

**800V�CoolMOSª�P7�Power�Transistor IPW80R280P7** 

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## **6�����Package�Outlines** 

**==> picture [292 x 321] intentionally omitted <==**

**==> picture [333 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.83 5.21 0.190 0.205<br>A1 2.27 2.54 0.089 0.100 DOCUMENT NO.<br>A2 1.85 2.16 0.073 0.085 Z8B00003327<br>b 1.07 1.33 0.042 0.052<br>b1 1.90 2.41 0.075 0.095 SCALE 0<br>b2 1.90 2.16 0.075 0.085<br>b3 2.87 3.38 0.113 0.133<br>b4c 0.552.87 3.130.68 0.1130.022 0.1230.027 0 5 5<br>D 20.80 21.10 0.819 0.831 7.5mm<br>D1 16.25 17.65 0.640 0.695<br>D2 0.95 1.35 0.037 0.053 EUROPEAN PROJECTION<br>E 15.70 16.13 0.618 0.635<br>E1 13.10 14.15 0.516 0.557<br>E2 3.68 5.10 0.145 0.201<br>E3 1.00 2.60 0.039 0.102<br>e 5.44 (BSC) 0.214 (BSC)<br>N 3 3 ISSUE DATE<br>L 19.80 20.32 0.780 0.800 09-07-2010<br>L1 4.10 4.47 0.161 0.176<br>�� 3.50 3.70 0.138 0.146 REVISION<br>Q 5.49 6.00 0.216 0.236 05<br>S 6.04 6.30 0.238 0.248<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�PG-TO�247,�dimensions�in�mm/inches** 

Final Data Sheet 

11 

Rev.�2.0,��2016-07-05 

**IPW80R280P7** 

- 

- 

Final Data Sheet 

12 

**IPW80R280P7** 

## IPW80R280P7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-07-05|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/IPW80R280P7XKSA1/power-mosfet-n-channel-800-v-17-a-024-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw80r280p7xksa1/mosfet-n-ch-800v-17a-to-247/dp/2750420)
---

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