# Power MOSFET, N Channel, 650 V, 15 A, 0.131 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3665091/)

**URL**: https://novapart.co/products/IPW65R155CFD7XKSA1/power-mosfet-n-channel-650-v-15-a-0131-ohm-to-247
**SKU**: IPW65R155CFD7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.1400
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7 SJ |
| Qualification | - |
| Power Dissipation | 77W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.131ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3665091/)

**IPW65R155CFD7** 

## **MOSFET** 

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**----- Start of picture text -----**<br>
Tab<br>1<br>4, 2 Li<br>3<br>VA Yj<br>**----- End of picture text -----**<br>


## **Features** 

DS(on) 

DS(on) 

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**----- Start of picture text -----**<br>
Drain<br>Pin 2, Tab<br>Gate *1<br>Pin 1<br>*2<br>*1: Internal body diode Source<br>*2: Integrated ESD diode Pin 3<br>**----- End of picture text -----**<br>


## **Benefits** 

|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj,max|700||V||||
|RDS(on),max|155||mΩ||||
|Qg,typ|28||nC||||
|ID,pulse|55||A||||
|Eoss @400V|4.0||µJ||||
|Bodydiode diF/dt|1300||A/µs||||
||||||||
|||**Package**||**Marking**|||
|IPW65R155CFD7||PG-TO247-3||65R155F7||see Appendix A|



Final Data Sheet 

1 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.0,��2020-10-27 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|15<br>10|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|55|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|64|mJ|ID=3.6A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.32|mJ|ID=3.6A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|3.6|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|77|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current1)|_I_S|-|-|15|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|55|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=6.4A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=6.4A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

3 

Rev.�2.0,��2020-10-27 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|1.62|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



Final Data Sheet 

Rev.�2.0,��2020-10-27 

4 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|650|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.32mA|
|Zero gate voltage drain current1)|_I_DSS|-<br>-|-<br>5|1<br>37|µA|_V_DS=650V,_V_GS=0V,_T_j=25°C<br>_V_DS=650V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|1000|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.131<br>0.293|0.155<br>-|Ω|_V_GS=10V,_I_D=6.4A,_T_j=25°C<br>_V_GS=10V,_I_D=6.4A,_T_j=150°C|
|Gate resistance|_R_G|-|10.0|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1283|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|22|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related2)|_C_o(er)|-|50|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related3)|_C_o(tr)|-|512|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|27|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Rise time|_t_r|-|15|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|100|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|
|Fall time|_t_f|-|5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=6.4A,<br>_R_G=10.2Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|9|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|28|-|nC|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=400V,_I_D=6.4A,_V_GS=0to10V|



> 1) Maximum specification is defined by calculated six sigma upper confidence bound 

> 2) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 3) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.0,��2020-10-27 

5 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.0|-|V|_V_GS=0V,_I_F=6.4A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|97|145.5|ns|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.46|0.92|µC|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|8.4|-|A|_V_R=400V,_I_F=6.4A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.0,��2020-10-27 

650V CoolIMOS™ CFD7 SJ Power Device 

**IPW65R155CFD7** 

**==> picture [539 x 288] intentionally omitted <==**

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Final Data Sheet 

7 

**IPW65R155CFD7** 

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Final Data Sheet 

8 

650V CoolIMOS™ CFD7 SJ Power Device 

**IPW65R155CFD7** 

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100 So 12 TEEPE EEE<br>Serer ereLL | 10 Ah / 400 V<br>80 ee 120 V YA<br>25 °C<br>8<br>Serer) /<br>60<br>| | | | | ft lp | W/ 4<br>150 °C 6<br>(— AER<br>40<br>4<br>ee<br>20<br>2<br>ae/eoY A LLEL EEE EEE EEE<br>0 0<br>0 2 4 6 8 10 12 0 10 20 30 40<br>V GS Q gate<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>10 [2] 80<br>SRSSEES<br>a es ee es<br>PEt TT TTT TT tT 60 Ne<br>ELT eer) RS<br>10 [1]<br>40<br>10 [0] TAT) |; ]3=E AH 1<br>See 20<br>RRR ae ee ee ee<br>PLT eine rT UOMO<br>TATE EEE EE SOO<br>EEE EEE EEE EEE es<br>10 [-1] 0<br>125 °C25 °C<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150<br>V SD [V] T j [°C]<br>I F=f( V SD T j E AS=f( T j I D V DD<br>I D V GS<br>I F AS<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

650V CooiIMOS™ CFD7 SJ Power Device 

**IPW65R155CFD7** 

**==> picture [528 x 283] intentionally omitted <==**

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730 10 [5]<br>10 [4]<br>To T WEES SS RSS eeee<br>700 ee eee === =S===S==========<br>Ciss<br>2 10 [3] Sa eeeeeegg2eeeee<br>670<br>10 [2]<br>FFT ACEI |E A S<br>640 Coss<br>a 10 [1] Aono Se<br>ae ee SSSS00Seeeeee<br>Crss<br>610<br>10 [0]<br>Sree) | eee<br>ee ee SS5=55==SS==========<br>580 PF {| [| | | [| | ff | 10 [-1] LFEEEEEECELEL | | | | | tT | TT tT EELtT tT tT tT yt et yyy<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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Final Data Sheet 

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**IPW65R155CFD7** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R155CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **6�����Package�Outlines** 

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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>


**Figure�1�����Outline�PG-TO247-3,�dimensions�in�mm** 

Final Data Sheet 

12 

Rev.�2.0,��2020-10-27 

**IPW65R155CFD7** 

- 

- 

- 

- 

Final Data Sheet 

13 

**IPW65R155CFD7** 

## IPW65R155CFD7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-10-27|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPW65R155CFD7XKSA1/power-mosfet-n-channel-650-v-15-a-0131-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw65r155cfd7xksa1/mosfet-n-ch-650v-15a-to-247/dp/3665091)
---

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