# Power MOSFET, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
**URL**: https://novapart.co/products/IPW65R080CFDFKSA2/power-mosfet-n-channel-650-v-433-a-0072-ohm-to-247
**SKU**: IPW65R080CFDFKSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.4700
**Stock**: 100+
**Lead Time**: 134 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD2 |
| Qualification | - |
| Power Dissipation | 391W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 43.3A |
| Drain Source On State Resistance | 0.072ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3106073/)
## MOSFET
Metal Oxide Semiconductor Field Effect Transistor
## CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor IPW65R080CFD
## Data Sheet
Rev. 2.4 Final
650V CoolMOS™ CFD2 Power Transistor
## IPW65R080CFD
## 1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
## Features
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
**==> picture [92 x 236] intentionally omitted <==**
**----- Start of picture text -----**
TO-247
drain
pin 2
gate
pin 1
source
pin 3
**----- End of picture text -----**
## Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar.
Table 1 Key Performance Parameters
||**Parameter**
**Value**|**Unit**|||Qjrors|
|---|---|---|---|---|---|
||V‡» @ TÎ ÑÈà
700|V||||
||RDS(on),max
0.08|Â||||
||Qg,typ
167|nC||||
||ID,pulse
137|A||||
||Eoss @ 400V
12.5|µJ||||
||Body diode di/dt
900|A/µs||||
||Qrr
1|µC||||
||trr
180|ns||||
||Irrm
10|A||||
|**Type / Ordering Code**
**Package**
**Marking**
**Related Links**
IPW65R080CFD
PG-TO 247
65F6080
see Appendix A
~~ff}~~
~~—_—_§_f}—_—§~~||||||
Final Data Sheet
Rev. 2.4, 2011-09-27
2
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
Rev. 2.4, 2011-09-27
3
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## 2 Maximum ratings
at TÎ = 25°C, unless otherwise specified
## Table 2 Maximum ratings
|Table 2 Maximum ratings|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Continuous drain current1)|I ‡|||43.3|A|T† = 25°C|
|||||27.4||T† = 100°C|
|Pulsed drain current2)|I ‡‚ÔÛÐÙþ|||137|A|T† = 25°C|
|Avalanche energy, single pulse|Eƒ»|||1160|mJ|I‡ = 8.7A, V‡‡ = 50V|
|Avalanche energy, repetitive|Eƒ¸|||1.76|mJ|I‡ = 8.7A, V‡‡ = 50V|
|Avalanche current, repetitive|I ƒ¸|||8.7|A||
|MOSFET dv/dt ruggedness|dv/dt|||50|V/ns|V‡» = 0 ... 400V|
|Gate source voltage|V•»|-20||20|V|static|
|||-30||30||AC (f > 1 Hz)|
|Power dissipation (non FullPAK)
TO-247|PÚÓÚ|||391.0|W|T† = 25°C|
|Operating and storage temperature|T΂TÙÚÃ|-55||150|°C||
|Mounting torque (non FullPAK)
TO-247||||60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current|I »|||43.3|A|T† = 25°C|
|Diode pulse current|I »‚ÔÛÐÙþ|||140|A|T† = 25°C|
|Reverse diode dv/dt3)|dv/dt|||50|V/ns|V‡» = 0 ... 400V, I»‡ ù I‡,
TÎ = 25°C|
|Maximum diode commutation speed|diË/dt|||900|A/µs||
> 1) Limited by TÎ ÑÈà.
> 2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ picture [147 x 65] intentionally omitted <==**
## 3 Thermal characteristics
Table 3 Thermal characteristics TO-247
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Thermal resistance, junction - case|RÚÌœ†|||0.32|°C/W||
|Thermal resistance, junction - ambient|RÚÌœƒ|||62|°C/W|leaded|
|Soldering temperature, wavesoldering only
allowed at leads|TÙÓÐÁ|||260|°C|1.6 mm (0.063 in.) from case for
10s|
Final Data Sheet
Rev. 2.4, 2011-09-27
5
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## 4 Electrical characteristics
at TÎ = 25°C, unless otherwise specified
## Table 4 Static characteristics
|Table 4 Static characteristics|||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Drain-source breakdown voltage|Vñ…¸ò‡»»|650|||V|V•» = 0V, I‡ = 1mA|
|Gate threshold voltage|V•»ñÚÌò|3.5|4|4.5|V|V‡» = V•», I‡ = 1.8mA|
|Zero gate voltage drain current|I ‡»»|||2|µA|V‡» = 650V, V•» = 0V, TÎ = 25°C|
||||500|||V‡» = 650V, V•» = 0V,
TÎ = 150°C|
|Gate-source leakage current|I •»»|||100|nA|V•» = 20V, V‡» = 0V|
|Drain-source on-state resistance|R‡»ñÓÒò||0.072|0.08|Â|V•» = 10V, I‡ = 17.6A, TÎ = 25°C|
||||0.187|||V•» = 10V, I‡ = 17.6A,
TÎ = 150°C|
|Gate resistance|R•||0.7||Â|f = 1MHz, open drain|
|Table 5 Dynamic characteristics|||||||
|Parameter|Symbol||Values||Unit|Note / Test Condition|
|||Min.|Typ.|Max.|||
|Input capacitance|CÍÙÙ||5030||pF|V•» = 0V, V‡» = 100V, f = 1MHz|
|Output capacitance|CÓÙÙ||215||pF||
|Effective output capacitance, energy
related1)|CÓñþØò||158||pF|V•» = 0V, V‡» = 0 ... 400V|
|Effective output capacitance, time related2)|CÓñÚØò||794||pF|I‡ = constant, V•» = 0V,
V‡» = 0 ... 400V|
|Turn-on delay time|tÁñÓÒò||20||ns|V‡‡ = 400V, V•» = 13V,
I‡ = 26.3A, R• = 1.8Â|
|Rise time|tØ||18||ns||
|Turn-off delay time|tÁñÓËËò||85||ns||
|Fall time|tË||6||ns||
## Table 6 Gate charge characteristics
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Gate to source charge|QÃÙ||32||nC|V‡‡ = 480V, I‡ = 26.3A,
V•» = 0 to 10V|
|Gate to drain charge|QÃÁ||87||nC||
|Gate charge total|QÃ||167||nC||
|Gate plateau voltage|VÔÐÈÚþÈÛ||6.4||V||
> 1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
> 2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.4, 2011-09-27
6
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## Table 7 Reverse diode characteristics
|Parameter|Symbol||Values|Values|Unit|Note / Test Condition|
|---|---|---|---|---|---|---|
|||Min.|Typ.|Max.|||
|Diode forward voltage|V»‡||0.9||V|V•» = 0V, IŒ = 26.3A, TÎ = 25°C|
|Reverse recovery time|tØØ||180||ns|V¸ = 400V, IŒ = 26.3A,
diŒ/dt = 100A/µs|
|Reverse recovery charge|QØØ||1||µC||
|Peak reverse recovery current|I ØØÑ||10||A||
Final Data Sheet
Rev. 2.4, 2011-09-27
7
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## 5 Electrical characteristics diagrams
## Table 8
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Power dissipation (Non FullPAK) Max. transient thermal impedance (Non FullPAK)
450 10 [0]
0.5
400 0.2
0.1
350
0.05
300 0.02
0.01
250
10 [-1] single pulse
200
150
100
50
0 10 [-2]
0 40 80 120 160 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]
TC [°C] tp [s]
Ptot=f(TC) ZthJC =f(tP); parameter: D=tp/T
[W] [K/W]
tot
P thJC
Z
**----- End of picture text -----**
## Table 9
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Safe operating area T†=25°C (Non FullPAK) Safe operating area T†=80°C (Non FullPAK)
10 [3] 10 [3]
1 µs
1 µs
10 [2] 10 [2]
10 µs
10 µs
100 µs
100 µs
10 [1] 10 [1]
1 ms
1 ms
10 ms
DC 10 ms
10 [0] 10 [0]
DC
10 [-1] 10 [-1]
10 [0] 10 [1] 10 [2] 10 [3] 10 [0] 10 [1] 10 [2] 10 [3]
VDS [V] VDS [V]
ID=f(VDS); TC=25 °C; Vgs>7,5V; D=0; parameter: tp ID=f(VDS); Vgs>7,5V; TC=80 °C; D=0; parameter: tp
[A] [A]
ID ID
**----- End of picture text -----**
Final Data Sheet
Rev. 2.4, 2011-09-27
8
650V CoolMOS™ CFD2 Power Transistor
**==> picture [147 x 65] intentionally omitted <==**
## IPW65R080CFD
## Table 10
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Typ. output characteristics T†=25°C Typ. output characteristics T†=125°C
150 90
20 V 20 V
10 V 80 10 V
125
8 V 8 V
70
7 V 7 V
100 6 V 60 6 V
5.5 V 5.5 V
50
75 5 V 5 V
4.5 V 40 4.5 V
50 30
20
25
10
0 0
0 5 10 15 20 0 5 10 15 20
VDS [V] VDS [V]
ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS
[A] [A]
ID ID
**----- End of picture text -----**
## Table 11
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Typ. drain-source on-state resistance Drain-source on-state resistance
0.3 0.25
0.20
5 V 5.5 V 6 V 6.5 V 7 V
0.15
0.2
10 V
0.10
98 % typ
0.05
0.1 0.00
1 11 21 31 41 51 -60 -20 20 60 100 140 180
ID [A] Tj [°C]
RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=17.6A; VGS=10 V
[Â] [Â]
DS(on) DS(on)
R R
**----- End of picture text -----**
Final Data Sheet
Rev. 2.4, 2011-09-27
9
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## Table 12
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Typ. transfer characteristics Typ. gate charge
140 10
25 °C 9
120
8
120 V 480 V
100
7
6
80
5
150 °C
60
4
3
40
2
20
1
0 0
0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180
VGS [V] Qgate [nC]
ID=f(VGS); |VDS|=20V; VGS=f(Qgate); ID=26.3 A pulsed; parameter: VDD
[V]
[A]
ID VGS
**----- End of picture text -----**
## Table 13
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Avalanche energy Drain-source breakdown voltage
1200 740
1100
720
1000
900 700
800
680
700
600 660
500
640
400
300 620
200
600
100
0 580
20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [°C] Tj [°C]
EAS=f(Tj); ID=8.7 A; VDD=50 V VBR(DSS)=f(Tj); ID=10 mA
[mJ] [V]
AS
E BR(DSS)
V
**----- End of picture text -----**
Final Data Sheet
Rev. 2.4, 2011-09-27
10
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## Table 14
**==> picture [512 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Typ. capacitances Typ. CÓÙÙ stored energy
10 [5] 22
20
18
10 [4]
Ciss
16
14
10 [3]
12
10
Coss
10 [2]
8
Crss 6
10 [1]
4
2
10 [0] 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS [V] VDS [V]
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS)
[µJ]
C [pF] oss
E
**----- End of picture text -----**
## Table 15
**==> picture [257 x 289] intentionally omitted <==**
**----- Start of picture text -----**
Forward characteristics of reverse diode
10 [3]
10 [2]
125 °C
25 °C
10 [1]
10 [0]
10 [-1]
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF=f(VSD); parameter: Tj
[A]
IF
**----- End of picture text -----**
Final Data Sheet
Rev. 2.4, 2011-09-27
11
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
## 6 Test Circuits
## Table 16 Diode_characteristics
**==> picture [382 x 153] intentionally omitted <==**
**----- Start of picture text -----**
Test circuit for diode characteristics Diode recovery waveform
ID ‘ di-/dt
ty =tg+fy
RG1 0,=Qs+ Of
ty
VDS
EESeS
GY
RG2
RRM “=
Qe aca
RG1 = RG2 Vv
**----- End of picture text -----**
## Table 17 Switching_times
**==> picture [471 x 126] intentionally omitted <==**
**----- Start of picture text -----**
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
— td(on) tr _ td(off) tf
+> + >
+ ton >+ toff
**----- End of picture text -----**
## Table 18 Unclamped_inductive
**==> picture [422 x 118] intentionally omitted <==**
**----- Start of picture text -----**
Unclamped inductive load test circuit Unclamped inductive waveform
V
(BR)DS
VD
ID VDS
VDS VDS
ID >
**----- End of picture text -----**
Final Data Sheet
Rev. 2.4, 2011-09-27
12
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
## 7 Package Outlines
## Figure 1 Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.4, 2011-09-27
13
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## 8 Appendix A
## Table 19 Related Links
- [IFX Design Tools:]
- http://www.infineon.com/cms/en/product/promopages/designtools/index.html
- [IFX CoolMOS Webpage:]
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
Final Data Sheet
Rev. 2.4, 2011-09-27
14
650V CoolMOS™ CFD2 Power Transistor
IPW65R080CFD
**==> picture [147 x 65] intentionally omitted <==**
## Revision History
IPW65R080CFD
## **Revision: 2011-09-27, Rev. 2.4**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.1|2011-08-29|update to CFD2 standard|
|2.2|2011-09-15|update pin naming|
|2.3|2011-09-16|release of new pin naming|
|2.4|2011-09-27|update the Igss test condition|
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2011-08-01 Published by Infineon Technologies AG 81726 München, Germany © 2011 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.4, 2011-09-27
15
## Links
- [View this product on Novapart](https://novapart.co/products/IPW65R080CFDFKSA2/power-mosfet-n-channel-650-v-433-a-0072-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw65r080cfdfksa2/mosfet-n-ch-650v-43-3a-to-247/dp/3106073)
---
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