# Power MOSFET, N Channel, 650 V, 53.5 A, 0.063 ohm, TO-247, Through Hole
**URL**: https://novapart.co/products/IPW65R070C6FKSA1/power-mosfet-n-channel-650-v-535-a-0063-ohm-to-247
**SKU**: IPW65R070C6FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.0000
**Stock**: 200+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:53.5A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 391W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 53.5A |
| Drain Source On State Resistance | 0.063ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2480875/)
## MOSFET
Metal Oxide Semiconductor Field Effect Transistor
## CoolMOS C6
650V CoolMOS™ C6 Power Transistor IPW65R070C6
## Data Sheet
Rev. 2.0, 2011-03-15 Final
Industrial & Multimarket
**IPW65R070C6**
## **650V CoolMOS™ C6 Power Transistor**
## **1 Description**
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
## **Features**
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC[1)]
**==> picture [85 x 87] intentionally omitted <==**
**----- Start of picture text -----**
drain
pin 2
gate
pin 1
source
pin 3
**----- End of picture text -----**
- Pb-free plating, Halogen free mold compound
## **Applications**
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
_Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended._
**Table 1 Key Performance Parameters**
**==> picture [203 x 109] intentionally omitted <==**
**----- Start of picture text -----**
|||||||
|---|---|---|---|---|---|
|Parameter|Value|Unit|
|V|DS @|T|j,max|700|V|
|R|DS(on),max|0.07||
|Q|g,typ|170|nC|
|I|D,pulse|150|A|
|E|oss @ 400V|13|µJ|
|Body diode d|i|/d|t|300|A/µs|
**----- End of picture text -----**
**Related Links** IFX CoolMOS Webpage IFX Design tools
**Type Package Marking** IPW65R070C6 PG-TO247 65C6070 ~~oo~~
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**==> picture [131 x 63] intentionally omitted <==**
## **Table of Contents**
## **Table of Contents**
|**1**|**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|---|---|
||**Table of Contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**Maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**4**|**Electrical characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**5**|**Electrical characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**6**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**7**|**Revision History**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
Final Data Sheet
3
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**==> picture [131 x 63] intentionally omitted <==**
**Maximum ratings**
## **2 Maximum ratings**
at _T_ j = 25 °C, unless otherwise specified.
## **Table 2 Maximum ratings**
|**Table 2**
**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-|-|53.5|A|_T_C= 25 °C|
|||||33.8||_T_C= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|150|A|_T_C=25 °C|
|Avalanche energy, single pulse|_E_AS|-|-|1160|mJ|_I_D=9.3 A,_V_DD=50 V|
|Avalanche energy, repetitive|_E_AR|-|-|1.76||_I_D=9.3 A,_V_DD=50 V|
|Avalanche current, repetitive|_I_AR|-|-|9.3|A||
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...480 V|
|Gate source voltage|_V_GS|-20|-|20|V|static|
|||-30||30||AC (f>1 Hz)|
|Power dissipation|_P_tot|-|-|391|W|_T_C=25 °C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C||
|Mounting torque||-|-|60|Ncm
A|M3 and M3.5 screws|
|Continuous diode forward current|_I_S|-|-|46.3||_T_C=25 °C|
|Diode pulse current2)|_I_S,pulse|-|-|150|A|_T_C=25 °C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400 V,_I_SD_I_D,
_T_j=25 °C|
|Maximum diode commutation
speed3)|dif/dt|-|-|300|A/µs||
1) Limited by _T_ j,max. Maximum duty cycle D=0.75
2) Pulse width _t_ p limited by _T_ j,max
3) Identical low side and high side switch with identical _R_ G; _V_ peak< _V_ (BR)DSS ; _T_ j< _T_ j.max
## **3 Thermal characteristics**
## **Table 3 Thermal characteristics TO-247**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**
**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|-|0.32|°C/W||
|Thermal resistance, junction -
ambient|_R_thJA|-|-|62||leaded|
|Soldering temperature,
wavesoldering only allowed at
leads|_T_sold|-|-|260|°C|1.6 mm (0.063 in.)
from case for 10 s|
Final Data Sheet
Rev. 2.0, 2011-03-15
4
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**==> picture [131 x 63] intentionally omitted <==**
**Electrical characteristics**
## **4 Electrical characteristics**
Electrical characteristics, at _T_ j=25 °C, unless otherwise specified.
## **Table 4 Static characteristics**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|650|-|-|V|_V_GS=0 V,_I_D=1.0 mA|
|Gate threshold voltage|_V_GS(th)|2.5|3|3.5||_V_DS=_V_GS,_I_D=1.76 mA|
|Zero gate voltage drain current|_I_DSS|-|-|1|µA|_V_DS=650 V,_V_GS=0 V,
_T_j=25 °C|
|||-|50|-||_V_DS=650 V,_V_GS=0 V,
_T_j=150 °C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|_R_DS(on)|-|0.063|0.07||_V_GS=10 V,_I_D=17.6 A,
_T_j=25 °C|
|||-|0.164|-||_V_GS=10 V,_I_D=17.6 A,
_T_j=150 °C|
|Gate resistance|_R_G|-|0.85|-||_f_=1 MHz, open drain|
## **Table 5 Dynamic characteristics**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**
**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|3900|-|pF|_V_GS=0 V,_V_DS=100 V,
_f_=1 MHz|
|Output capacitance|_C_oss|-|215|-|||
|Effective output capacitance,
energy related1)|_C_o(er)|-|140|-||_V_GS=0 V,
_V_DS=0...480 V|
|Effective output capacitance, time
related2)|_C_o(tr)|-|670|-||_I_D=constant,_V_GS=0 V
_V_DS=0...480V|
|Turn-on delay time|_t_d(on)|-|17|-|ns|_V_DD=400 V,
_V_GS=13 V,_I_D=26.3 A,
_R_G= 1.8|
|Rise time|_t_r|-|17|-|||
|Turn-off delay time|_t_d(off)|-|90|-|||
|Fall time|_t_f|-|6|-|||
1) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS
2) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
Rev. 2.0, 2011-03-15
5
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**==> picture [131 x 63] intentionally omitted <==**
**Electrical characteristics**
## **Table 6 Gate charge characteristics**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**
**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|20|-|nC|_V_DD=480 V,
_I_D=26.3 A,
_V_GS=0 to 10 V|
|Gate to drain charge|_Q_gd|-|85|-|||
|Gate charge total|_Q_g|-|170|-|||
|Gate plateau voltage|_V_plateau|-|5.5|-|V||
## **Table 7 Reverse diode characteristics**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**
**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0 V,_I_F=26.3 A,
_T_j=25 °C|
|Reverse recovery time|_t_rr|-|730|-|ns|_V_R=400 V,_I_F=26.3 A,
d_i_F/d_t_=100 A/µs|
|Reverse recovery charge|_Q_rr|-|19|-|µC||
|Peak reverse recovery current|_I_rrm|-|50|-|A||
Final Data Sheet
6
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**5 Electrical characteristics diagrams**
## **Electrical characteristics diagrams**
**Table 8**
## **Power dissipation**
_P_ tot = f( _T_ C)
## **Max. transient thermal impedance**
_Z_ (thJC)=f(tp); parameter: D=tp/ _T_
**Table 9**
> **Safe operating area** _**T**_ **C=25 °C**
_I_ D=f(VDS); _T_ C=25 °C; _V_ GS > 7V; D=0; parameter _t_ p
## **Safe operating area** _**T**_ **C=80 °C**
_I_ D=f(VDS); _T_ C=80°C; _V_ GS > 7V; D=0; parameter _t_ p
Final Data Sheet
Rev. 2.0, 2011-03-15
7
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**Electrical characteristics diagrams**
## **Table 10**
**Typ. output characteristics** _**T**_ **j=25 °C**
_I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS
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**----- Start of picture text -----**
Typ. output characteristics T j=125 °C
**----- End of picture text -----**
_I_ D=f( _V_ DS); _T_ j=125 °C; parameter: _V_ GS
## **Table 11**
**Typ. drain-source on-state resistance**
## **Drain-source on-state resistance**
**==> picture [399 x 12] intentionally omitted <==**
**----- Start of picture text -----**
R DS(on)=f( I D); T j=125 °C; parameter: V GS R DS(on) =f( T j ); I D =17.6 A; V GS =10 V
**----- End of picture text -----**
Final Data Sheet
8
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
## **Electrical characteristics diagrams**
## **Table 12**
**Typ. transfer characteristics**
_I_ D=f( _V_ GS); _V_ DS=20V
**Typ. gate charge**
_V_ GS=f( _Q_ gate), _I_ D=26.3 A pulsed
**Table 13**
## **Avalanche energy**
**==> picture [405 x 286] intentionally omitted <==**
**----- Start of picture text -----**
Avalanche energy Drain-source breakdown voltage
1200
740
1100 \
1000 \ 720
900 700
800 \ 680
— 700
€
=< 600 = 660
W500 \ =
400 \ = 640
300200 \ 620
100 \ 600
; oN ssa
20 60 100 140 180 60-2000: 200 G0
E AS =f( T j ); I D =9.3 A; V DD =50 V V BR(DSS)=f( T j); I D=1.0 mA
**----- End of picture text -----**
Final Data Sheet
9
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**Electrical characteristics diagrams**
## **Table 14**
**Typ. capacitances**
C=f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz
## **Typ.** _**C**_ **oss stored energy**
_E_ **OSS** =f( _V_ DS)
## **Table 15**
## **Forward characteristics of reverse diode**
_I_ F=f( _V_ SD); parameter: _T_ j
Final Data Sheet
10
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
**6**
## **Package outlines**
## **Package outlines**
**Figure 1 Outlines TO-247, dimensions in mm/inches**
Final Data Sheet
11
Rev. 2.0, 2011-03-15
**650V CoolMOS™ C6 Power Transistor IPW65R070C6**
## **Revision History**
## **7 Revision History**
## **Revision History: 2011-03-15, Rev. 2.0**
## **Previous Revision:**
|**Revision**|**Subjects (major changes since last revision)**|
|---|---|
|2.0|Release of final data sheet|
## **We Listen to Your Comments**
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: **erratum@infineon.com**
Edition 2011-03-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved.
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.0, 2011-03-15
## Links
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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw65r070c6fksa1/mosfet-n-ch-650v-53-5a-to-247/dp/2480875)
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