# Power MOSFET, N Channel, 650 V, 36 A, 0.052 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3582472/)

**URL**: https://novapart.co/products/IPW65R060CFD7XKSA1/power-mosfet-n-channel-650-v-36-a-0052-ohm-to-247
**SKU**: IPW65R060CFD7XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9200
**Stock**: 100+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS CFD7 |
| Qualification | - |
| Power Dissipation | 171W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.052ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3582472/)

**IPW65R060CFD7** 

## **MOSFET** 

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**----- Start of picture text -----**<br>
Tab<br>1<br>4, 2 Li<br>3<br>VA Yj<br>**----- End of picture text -----**<br>


## **Features** 

DS(on) switching DS(on) 

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**----- Start of picture text -----**<br>
Drain<br>Pin 2<br>Gate *1<br>Pin 1<br>Source<br>*1: Internal body diode Pin 3<br>**----- End of picture text -----**<br>


## **Benefits** 

|**Parameter**|**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|
|VDS @Tj,max|700||V||||
|RDS(on),max|60||mΩ||||
|Qg,typ|68||nC||||
|ID,pulse|146||A||||
|Eoss @400V|9.5||µJ||||
|Bodydiode diF/dt|1300||A/µs||||
||||||||
|||**Package**||**Marking**|||
|IPW65R060CFD7||PG-TO247-3||65R060F7||see Appendix A|



Final Data Sheet 

1 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 

Final Data Sheet 

2 

Rev.�2.1,��2020-08-12 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|36<br>23|A|TC=25°C<br>TC=100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|146|A|TC=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|171|mJ|ID=5.1A; VDD=50V; see table 10|
|Avalanche energy, repetitive|_E_AR|-|-|0.86|mJ|ID=5.1A; VDD=50V; see table 10|
|Avalanche current, single pulse|_I_AS|-|-|5.1|A|-|
|MOSFET dv/dt ruggedness|dv/dt|-|-|120|V/ns|_V_DS=0...400V|
|Gate source voltage(static)|_V_GS|-20|-|20|V|static;|
|Gate source voltage(dynamic)|_V_GS|-30|-|30|V|AC(f>1 Hz)|
|Power dissipation|_P_tot|-|-|171|W|_T_C=25°C|
|Storage temperature|_T_stg|-55|-|150|°C|-|
|Operating junction temperature|_T_j|-55|-|150|°C|-|
|Mountingtorque|-|-|-|60|Ncm|M3 and M3.5 screws|
|Continuous diode forward current1)|_I_S|-|-|36|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|146|A|_T_C=25°C|
|Reverse diode dv/dt3)|dv/dt|-|-|70|V/ns|_V_DS=0...400V,_I_SD<=16.4A,_T_j=25°C<br>see table 8|
|Maximum diode commutation speed|diF/dt|-|-|1300|A/µs|_V_DS=0...400V,_I_SD<=16.4A,_T_j=25°C<br>see table 8|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|_V_rms,_T_C=25°C,_t_=1min|



> 1) Limited by Tj max. 

> 2) Pulse width tp limited by Tj,max 

3) Identical low side and high side switch with identical RG 

Final Data Sheet 

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Rev.�2.1,��2020-08-12 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|0.73|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6mm (0.063 in.) from case for 10s|



Final Data Sheet 

Rev.�2.1,��2020-08-12 

4 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|650|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|3.5|4|4.5|V|_V_DS=_V_GS,_I_D=0.86mA|
|Zero gate voltage drain current1)|_I_DSS|-<br>-|-<br>13|1<br>37|µA|_V_DS=650V,_V_GS=0V,_T_j=25°C<br>_V_DS=650V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.052<br>0.115|0.060<br>-|Ω|_V_GS=10V,_I_D=16.4A,_T_j=25°C<br>_V_GS=10V,_I_D=16.4A,_T_j=150°C|
|Gate resistance|_R_G|-|5.8|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|3288|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|51|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related2)|_C_o(er)|-|119|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related3)|_C_o(tr)|-|1231|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|31|-|ns|_V_DD=400V,_V_GS=13V,_I_D=16.4A,<br>_R_G=5.3Ω;seetable9|
|Rise time|_t_r|-|14|-|ns|_V_DD=400V,_V_GS=13V,_I_D=16.4A,<br>_R_G=5.3Ω;seetable9|
|Turn-off delay time|_t_d(off)|-|114|-|ns|_V_DD=400V,_V_GS=13V,_I_D=16.4A,<br>_R_G=5.3Ω;seetable9|
|Fall time|_t_f|-|4|-|ns|_V_DD=400V,_V_GS=13V,_I_D=16.4A,<br>_R_G=5.3Ω;seetable9|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|19|-|nC|_V_DD=400V,_I_D=16.4A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|21|-|nC|_V_DD=400V,_I_D=16.4A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|68|-|nC|_V_DD=400V,_I_D=16.4A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=400V,_I_D=16.4A,_V_GS=0to10V|



> 1) Maximum specification is defined by calculated six sigma upper confidence bound 

> 2) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 3) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.1,��2020-08-12 

5 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|1.0|-|V|_V_GS=0V,_I_F=16.4A,_T_j=25°C|
|Reverse recovery time|_t_rr|-|156|234|ns|_V_R=400V,_I_F=16.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Reverse recovery charge|_Q_rr|-|0.86|1.72|µC|_V_R=400V,_I_F=16.4A,d_i_F/d_t_=100A/µs;<br>see table 8|
|Peak reverse recovery current|_I_rrm|-|10.1|-|A|_V_R=400V,_I_F=16.4A,d_i_F/d_t_=100A/µs;<br>see table 8|



Final Data Sheet 

6 

Rev.�2.1,��2020-08-12 

650V CoolIMOS™ CFD7 SJ Power Device 

**IPW65R060CFD7** 

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Final Data Sheet 

7 

650V CoolMOS™ CFD7 SJ Power Device 

**IPW65R060CFD7** 

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Final Data Sheet 

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650V CoolIMOS™ CFD7 SJ Power Device 

**IPW65R060CFD7** 

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Final Data Sheet 

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650V CoolIMOS™ CFD7 SJ Power Device 

**IPW65R060CFD7** 

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730 10 [5]<br>700 10 [4]<br>Te ) | SEES<br>Ciss<br>P| SSS<br>670 10 [3]<br>{| |[| || | APUYl |} | aPe (San nEeneT EEEEERE<br>640 Se Soe |? 10 [2] BREESE<br>Coss<br>Pt yt | | ft ft =SS ee<br>[ YT | T tT yt yy yy yy<br>610 10 [1]<br>Atti} tt BERERSREERRRRRERee<br>Crss<br>Sef pe ====->-i--_-----===<br>580 PF | | [| | | | |] | 10 [0] PPTTT ELIT Lilt tee ie<br>-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500<br>T j [°C] V DS [V]<br>V BR(DSS)=f( T j I D C =f( V DS V GS f<br>C<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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15 P| | | [| | tf ft tt<br>P| | | [| | | | ft ft<br>P| | | [| | | | ft ft<br>ee,<br>10<br>pt} tt} tt |<br>pt tt | | | are<br>3 pt | | Ee<br>= | [ [| | Pri | [|<br>PT |Pet<br>5 |[eT]<br>‘rt | | | ct lt<br>yi | | [| | tl ct ct<br>Pt | | [| | | | ft [|<br>fl of | | ff tt<br>0 Pt | | | Jf| ft ft ff| ft<br>0 100 200 300 400 500<br>V DS [V]<br>Pe E oss = f (V DS )<br>oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPW65R060CFD7** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

11 

**650V�CoolMOSª�CFD7�SJ�Power�Device IPW65R060CFD7** 

**==> picture [120 x 53] intentionally omitted <==**

## **6�����Package�Outlines** 

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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>


**Figure�1�����Outline�PG-TO247-3,�dimensions�in�mm** 

Final Data Sheet 

12 

Rev.�2.1,��2020-08-12 

**IPW65R060CFD7** 

- 

- 

- 

- 

Final Data Sheet 

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**IPW65R060CFD7** 

## IPW65R060CFD7 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2020-06-23|Release of final version|
|2.1|2020-08-12|Increased continuous diode forward current rating|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IPW65R060CFD7XKSA1/power-mosfet-n-channel-650-v-36-a-0052-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw65r060cfd7xksa1/mosfet-n-ch-650v-36a-to-247/dp/3582472)
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> Novapart is a B2B electronic component broker that sources across 500+ verified
> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
