# Power MOSFET, N Channel, 600 V, 23.8 A, 0.16 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1860836/)

**URL**: https://novapart.co/products/IPW60R160C6FKSA1/power-mosfet-n-channel-600-v-238-a-016-ohm-to-247
**SKU**: IPW60R160C6FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4700
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 176W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 23.8A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1860836/)

## MOSFET 

IPx60R160C6 

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Rev. 2. 3<br>Final<br>**----- End of picture text -----**<br>


**IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6** 

## **600V CoolMOS** " **C6 Power Transistor** 

## **1 Description** 

CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. 

## **Features** 

- Extremely low losses due to very low FOM Rdson*Qg and Eoss 

- Very high commutation ruggedness 

- Easy to use/drive 

- JEDEC[1)] qualified, Pb-free plating, Halogen free 

## **Applications** 

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. 

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drain<br>pin 2<br>“<br>gate<br>pin 1<br>source<br>pin 3<br>**----- End of picture text -----**<br>


_Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended._ 

**Table 1 Key Performance Parameters** 

|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS @_T_j,max|650|V|
|_R_DS(on),max|0.16|!|
|_Q_g,typ|75|nC|
|_I_D,pulse|70|A|
|_E_oss@ 400V|6|µJ|
|Body diode d_i_/d_t_|500|A/µs|



|**Type / Ordering Code**<br>aSS|**Package**<br>S|**Marking**<br>~~=~~|**Related Links**<br>~~=~~|
|---|---|---|---|
|IPW60R160C6<br>SS|PG-TO247<br>S|6R160C6<br>~~=~~|IFX C6 Product Brief<br>I<br>FX C6 Portfolio<br>IFX CoolMOS Webpage<br>IFX Design tools<br>~~=~~|
|IPB60R160C6<br>SS<br>ee|PG-TO263<br>S<br>ee|||
|IPP60R160C6<br>SS<br>a|PG-TO220<br>S<br>a|||
|IPA60R160C6<br>SS<br>ee|PG-TO220 FullPAK<br>S<br>ee|||



Rev. 2.3 

Page 2 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Table of Contents** 

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## **Table of Contents** 

|**1**|**Description** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|---|---|
||**Table of Contents** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**Maximum ratings**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|**3**|**Thermal characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**Electrical characteristics** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**5**|**Electrical characteristics diagrams**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**6**|**Test circuits** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**7**|**Package outlines**<br>. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**8**|**Revision History** . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|



Rev. 2.3 

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2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

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## **Maximum ratings** 

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-|-|23.8|A|_T_C= 25 °C|
|||||15||_T_C= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|70|A|_T_C=25 °C|
|Avalanche energy, single pulse|_E_AS|-|-|497|mJ|_I_D=4.1 A,_V_DD=50 V<br>(see table 21)|
|Avalanche energy, repetitive|_E_AR|-|-|0.75||_I_D=4.1 A,_V_DD=50 V|
|Avalanche current, repetitive|_I_AR|-|-|4.1|A||
|MOSFET dv/dt ruggedness|dv/dt|-|-|50|V/ns|_V_DS=0...480 V|
|Gate source voltage|_V_GS|-20|-|20|V|static|
|||-30||30||AC (f>1 Hz)|
|Power dissipation for<br>TO-220, TO-247, TO-263|_P_tot|-|-|176|W|_T_C=25 °C|
|Power dissipation for<br>TO-220 FullPAK|_P_tot|-|-|34|||
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C||
|Mounting torque<br>TO-220, TO-247||-|-|60|Ncm|M3 and M3.5 screws|
|Mounting torque<br>TO-220 FullPAK||||50||M2.5 screws|
|Continuous diode forward current|_I_S|-|-|20.6|A|_T_C=25 °C|
|Diode pulse current2)|_I_S,pulse|-|-|70|A|_T_C=25 °C|
|Reverse diode dv/dt3)|dv/dt|-|-|15|V/ns|_V_DS=0...400 V,_I_SD"_I_D,<br>_T_j=25 °C|
|Maximum diode commutation<br>speed3)|dif/dt|||500|A/µs||



1) Limited by _T_ j,max. Maximum duty cycle D=0.75 

- 2) Pulse width _t_ p limited by _T_ j,max 

- 3) Identical low side and high side switch with identical _R_ G 

Final Data Sheet 

4 

Rev. 2.1, 2010-02-09 

Rev. 2.3 

2018-02-26 

Page 4 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Thermal characteristics** 

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## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6)** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||0.71||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||62||||leaded|
|ambient|||||||||||||
|Soldering temperature,||_T_sold||-||-||260||°C||1.6 mm (0.063 in.)|
|wavesoldering only allowed at||||||||||||from case for 10 s|
|leads|||||||||||||



## **Table 4 Thermal characteristics TO-220FullPAK (IPA60R160C6)** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||3.67||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||80||||leaded|
|ambient|||||||||||||
|Soldering temperature,||_T_sold||-||-||260||°C||1.6 mm (0.063 in.)|
|wavesoldering only allowed at||||||||||||from case for 10 s|
|leads|||||||||||||



## **Table 5 Thermal characteristics TO-263 (IPB60R160C6)** 

|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Thermal resistance, junction - case||_R_thJC||-||-||0.71||°C/W|||
|Thermal resistance, junction -||_R_thJA||-||-||62||||SMD version, device|
|ambient||||||||||||on PCB, minimal|
|||||||||||||footprint|
|||||-||35||-||||SMD version, device|
|||||||||||||on PCB, 6cm2 cooling|
|||||||||||||area1)|
|Soldering temperature,||_T_sold||-||-||260||°C||reflow MSL1|
|wave- & reflow soldering allowed|||||||||||||



1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm[2] copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. 

Final Data Sheet 

5 

Rev. 2.1, 2010-02-09 

Rev. 2.3 

2018-02-26 

Page 5 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

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## **Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

|**Table 6**|**Static characteristics**|**Static characteristics**|**Static characteristics**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**|||**Symbol**||||**Values**||||**Unit**||**Note / Test Condition**|
||||||**Min.**||**Typ.**||**Max.**|||||
|Drain-source breakdown voltage|||_V_(BR)DSS||600||-||-||V||_V_GS=0 V,_I_D=0.25 mA|
|Gate threshold voltage|||_V_GS(th)||2.5||3||3.5||||_V_DS=_V_GS,_I_D=0.75 mA|
|Zero gate voltage drain current|||_I_DSS||-||-||1||µA||_V_DS=600 V,_V_GS=0 V,|
||||||||||||||_T_j=25 °C|
||||||-||10||-||||_V_DS=600 V,_V_GS=0 V,|
||||||||||||||_T_j=150 °C|
|Gate-source|leakage current||_I_GSS||-||-||100||nA||_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|||_R_DS(on)||-||0.14||0.16||!||_V_GS=10 V,_I_D=11.3 A,|
||||||||||||||_T_j=25 °C|
||||||-||0.37||-||||_V_GS=10 V,_I_D=11.3 A,|
||||||||||||||_T_j=150 °C|
|Gate resistance|||_R_G||-||6.4||-||!||_f_=1 MHz, open drain|



## **Table 7 Dynamic characteristics** 

||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Parameter**||**Symbol**||||**Values**||||**Unit**||**Note /**|
|||||**Min.**||**Typ.**||**Max.**||||**Test Condition**|
|Input capacitance||_C_iss||-||1660||-||pF||_V_GS=0 V,_V_DS=100 V,|
|Output capacitance||_C_oss||-||100||-||||_f_=1 MHz|
|Effective output capacitance,||_C_o(er)||-||66||-||||_V_GS=0 V,|
|energy related1)||||||||||||_V_DS=0...480 V|
|Effective output capacitance, time||_C_o(tr)||-||314||-||||_I_D=constant,_V_GS=0 V|
|related2)||||||||||||_V_DS=0...480V|
|Turn-on delay time||_t_d(on)||-||13||-||ns||_V_DD=400 V,|
|Rise time<br>Turn-off delay time||_t_r<br>_t_d(off)||-<br>-||13<br>96||-<br>-||||_V_GS=13 V,_I_D=11.3 A,<br>_R_G= 1.7!<br>(see table 20)|
|Fall time||_t_f||-||8||-|||||
||||||||||||||



1) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

2) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while VDS is rising from 0 to 80% V(BR)DSS 

Final Data Sheet 

6 

**Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

Rev. 2.3 

Page 6 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

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## **Electrical characteristics** 

## **Table 8 Gate charge characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|9|-|nC|_V_DD=480 V,<br>_I_D=11.3 A,<br>_V_GS=0 to 10 V|
|Gate to drain charge|_Q_gd|-|38|-|||
|Gate charge total|_Q_g|-|75|-|||
|Gate plateau voltage|_V_plateau|-|5.4|-|V||



## **Table 9 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0 V,_I_F=11.3 A,<br>_T_j=25 °C|
|Reverse recovery time|_t_rr|-|460|-|ns|_V_R=400 V,_I_F=11.3 A,<br>d_i_F/d_t_=100 A/µs<br>(see table 22)|
|Reverse recovery charge|_Q_rr|-|8.2|-|µC||
|Peak reverse recovery current|_I_rrm|-|35|-|A||



Final Data Sheet 

7 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 Page 7 2018-02-26 

Rev. 2.3 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

## **Table 10** 

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Power dissipation<br>TO-220, TO-247, TO-263<br>**----- End of picture text -----**<br>


**Power dissipation TO-220 FullPAK** 

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**----- Start of picture text -----**<br>
es P tot = f( T C) P tot = f( T C)<br>**----- End of picture text -----**<br>


**Table 11** 

**Max. transient thermal impedance TO-220, TO-247, TO-263** 

**Max. transient thermal impedance TO-220 FullPAK** 

_Z_ (thJC)=f(tp); parameter: D=tp/T _Z_ (thJC)=f(tp); parameter: D=tp/T rs( Final Data Sheet 8 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

Final Data Sheet 

Rev. 2.3 

Page 8 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

## **Electrical characteristics diagrams** 

## **Table 12** 

**Safe operating area** _**T**_ **C=25 °C TO-220, TO-247, TO-263** 

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Safe operating area  T C=25 °C<br>TO-220 FullPAK<br>**----- End of picture text -----**<br>


_I_ D=f(VDS); _T_ C=25 °C; D=0; parameter _t_ p _I_ D=f(VDS); _T_ C=25 °C; D=0; parameter _t_ p 

**Table 13** 

**Safe operating area** _**T**_ **C=80 °C TO-220, TO-247, TO-263** 

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**----- Start of picture text -----**<br>
I D=f(VDS);  T C=80 °C; D=0; parameter t p<br>**----- End of picture text -----**<br>


**Safe operating area** _**T**_ **C=80 °C TO-220 FullPAK** 

_I_ D=f(VDS); _T_ C=80 °C; D=0; parameter _t_ p 

Final Data Sheet 

9 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

Rev. 2.3 

Page 9 

2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Electrical characteristics diagrams** 

**Table 14** 

## ~~Ge~~ **Typ. output characteristics** _**T**_ **C=25 °C Typ. output characteristics** _**T**_ **j=125 °C** 

_I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS 

_I_ D=f( _V_ DS); _T_ j=125 °C; parameter: _V_ GS 

**Table 15** 

## rs **Typ. drain-source on-state resistance Drain-source on-state resistance** 

er _R_ DS(on)=f( _I_ D); _T_ j=125 °C; parameter: _V_ GS _R_ **DS(on)** =f( _T_ **j** ); _I_ **D** =11.3 A; _V_ **GS** =10 V 

Final Data Sheet 

10 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 Page 10 2018-02-26 

Rev. 2.3 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Electrical characteristics diagrams** 

**Table 16** 

## ~~a~~ **Typ. transfer characteristics Typ. gate charge** 

a _I_ D=f( _V_ GS); _V_ DS=20V _V_ GS=f( _Q_ gate), _I_ D=11.3 A pulsed 

**Table 17** 

## a **Avalanche energy Drain-source breakdown voltage** 

a _E_ **AS** =f( _T_ **j** ); _I_ **D** =4.1 A; _V_ **DD** =50 V _V_ BR(DSS)=f( _T_ j); _I_ D=0.25 mA 

Final Data Sheet 

11 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

Rev. 2.3 

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2018-02-26 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

## **Electrical characteristics diagrams** 

## **Table 18** 

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Typ. capacitances<br>**----- End of picture text -----**<br>


C=f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

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**----- Start of picture text -----**<br>
Typ. C oss stored energy<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
E OSS =f( V DS)<br>**----- End of picture text -----**<br>


**Table 19** 

## **Forward characteristics of reverse diode** 

_I_ F=f( _V_ SD); parameter: _T_ j 

Final Data Sheet 

12 

**Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

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**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Test circuits** 

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## **6 Test circuits** 

**Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform** 

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**----- Start of picture text -----**<br>
V DS<br>90%<br>V DS<br>V GS<br>10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>**----- End of picture text -----**<br>


**Table 21 Unclamped inductive load test circuit and waveform** 

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**----- Start of picture text -----**<br>
Unclamped inductive load test circuit Unclamped inductive waveform<br>V (BR)DS<br>V D<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


**Table 22 Test circuit and waveform for diode recovery times** 

**Test circuit for diode recovery times Diode recovery waveform** 

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**----- Start of picture text -----**<br>
I D #<br>/#) #/$<br>R G1 [$] !0000(($ .!" .$")  ! )<br>$00<br>V DS ) $. $ )<br>R G2 !. !) %$! --, $<br>--, /#00 #/$ "--,<br>'$! --,<br>R G1 =  R G2<br>.*+$$$&&<br>**----- End of picture text -----**<br>


Final Data Sheet 

13 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 Page 13 2018-02-26 

Rev. 2.3 

**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

**Package outlines** 

**7 Package outlines** 

**Figure 1 Outlines TO-247, dimensions in mm/inches** 

Final Data Sheet 

14 **Rev. 2.** 12 **, 201** 04 **-** 01 **2-0** 92 

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**600V CoolMOS** " **C6 Power Transistor IPx60R160C6** 

## **Package outlines** 

**Figure 2 Outlines TO-220, dimensions in mm/inches** 

Final Data Sheet 

Rev. 2.2, 2014-12-02Rev. 2.1, 2010-02-09 

15 Page 15 

Rev. 2.3 

2018-02-26 

6**M =^^[FGKm =6 H^fTa LaP]bXbc^a 

CHx6*J160=6 

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/45<487 @DC=;?7B 

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**----- Start of picture text -----**<br>
1 2 3<br>MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>DOCUMENT NO.<br>A 4.50 4.90<br>Z8B00003319<br>A1 2.34 2.85<br>A2 2.42 2.86 REVISION<br>b 0.65 0.90 07<br>b1 0.95 1.38<br>b2 0.95 1.51 SCALE 5:1<br>b3 0.65 1.38 0 1 2 3 4 5mm<br>b4 0.65 1.51<br>c 0.40 0.63<br>D 15.67 16.15<br>D1 8.97 9.83 EUROPEAN PROJECTION<br>E 10.00 10.65<br>e 2.54<br>H 28.70 29.75<br>L 12.78 13.75<br>L1 2.83 3.45<br>øP 3.00 3.30 ISSUE DATE<br>Q 3.15 3.50 27.01.2017<br>**----- End of picture text -----**<br>


>X]P[ <PcP KWTTc 

**Figure 3 Outline PG­TO­220 FullPAK dimensions in mm** 

JTe( ,(,& ,*+.'12'02 2018-02-26 

+6 Page 16 

Rev. 2.3 

)$$3 *@@=-.1G *) /@E7A 2A4?B;BC@A ,/F)$0%)$*) 

/45<487 @DC=;?7B 

+;8DA7 ( .DC=;?7B 2."&)'! 6;>7?B;@?B ;? >>#;?597B 

*02-1 )-3- ,/..3 

%' +.4# &#%! &$%$"$&"$(Rev. 2.2, 2014-12-02 

Rev. 2.3 

Page 17 

2018-02-26 

**IPx60R160C6** 

## IPx60R160C6 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2011-06-08|Release of final data sheet|
|2.1|2011-09-14|-|
|2.2|2015-02-03|PG-TO220 FullPAK package outline update (creation:2014-12-02)|
|2.3|2018-03-04|Outline PG-TO220 FullPAK update|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

18 



## Links

- [View this product on Novapart](https://novapart.co/products/IPW60R160C6FKSA1/power-mosfet-n-channel-600-v-238-a-016-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipw60r160c6fksa1/mosfet-n-ch-600v-23-8a-to247/dp/1860836)
---

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