# Power MOSFET, N Channel, 600 V, 31 A, 0.09 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3155121/)

**URL**: https://novapart.co/products/IPW60R099CPAFKSA1/power-mosfet-n-channel-600-v-31-a-009-ohm-to-247
**SKU**: IPW60R099CPAFKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.5500
**Stock**: 200+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS |
| Qualification | AEC-Q101 |
| Power Dissipation | 255W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.09ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155121/)

**IPW60R099CPA** 

## **CoolMOS[TM] Power Transistor** 

**==> picture [191 x 76] intentionally omitted <==**

**----- Start of picture text -----**<br>
Product Summary<br>V  DS 600 V<br>R  DS(on),max 0.105 Ω<br>Q  g,typ 60 nC<br>**----- End of picture text -----**<br>


## **Features** 

- Lowest figure-of-merit RON x Qg 

- Ultra low gate charge 

- Extreme dv/dt rated 

**==> picture [58 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TO247-3<br>**----- End of picture text -----**<br>


- High peak current capability 

- Automotive AEC Q101 qualified 

- Green package (RoHS compliant) 

## **CoolMOS CPA is specially designed for:** 

- DC/DC converters for Automotive Applications 

|**Parameter**<br>**Symbol**<br>~~ee~~<br>~~ooo~~|**Symbol **<br>~~ee~~<br>~~ooo~~|**Conditions**<br>~~ee~~<br>~~ooo~~|**Unit**<br>**Value**<br>~~ee~~<br>~~ooo~~|**Unit**|
|---|---|---|---|---|
|Continuous drain current<br>_I_<br>~~ee~~<br>~~ooo~~<br>~~ee~~|_I_D<br>~~ee~~<br>~~ooo~~<br>~~ee~~|_T_C=25 °C<br>~~ee~~<br>~~ooo~~<br>~~ee~~|A<br>31<br>19<br>93<br>~~ee~~<br>~~ooo~~<br>~~ee~~<br>~~ee~~|A|
|||_T_C=100 °C<br>~~ooo~~<br>~~ee~~<br>~~ee~~|||
|Pulsed drain current1)<br>_I_<br>~~ooo~~<br>~~ee~~|_I_D,pulse<br>~~ooo~~<br>~~ee~~|_T_C=25 °C<br>~~ooo~~<br>~~ee~~<br>~~ee~~|||
|Avalanche energy, single pulse<br>_E_<br>~~ee~~<br>~~|~~<br>~~ee~~|_E_AS<br>~~ee~~<br>~~|~~<br>~~ee~~|_I_D=11 A,_V_DD=50 V<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~|800<br>mJ<br>1.2<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~|mJ|
|Avalanche energy, repetitive_t_AR<br>1),2)<br>_E_<br>~~ee~~|_E_AR<br>~~ee~~|_I_D=11 A,_V_DD=50 V<br>~~ee~~|||
|Avalanche current, repetitive_t_AR<br>1),2)<br>_I_<br>~~ee~~<br>~~|~~<br>~~ee~~|_I_AR<br>~~ee~~<br>~~|~~<br>~~ee~~|~~ee~~<br>~~|~~<br>~~ee~~|A<br>11<br>~~ee~~<br>~~|~~<br>~~ee~~|A|
|MOSFET d_v_/d_t_ruggedness<br>d<br>~~ee~~|d_v_/d_t_<br>~~ee~~|_V_DS=0...480 V<br>~~ee~~|V/ns<br>50<br>~~ee~~|V/ns|
|Gate source voltage<br>_V_<br>~~ee~~<br>~~|~~<br>~~ee~~|_V_GS<br>~~ee~~<br>~~|~~<br>~~ee~~|static<br>~~ee~~<br>~~|~~<br>~~ee~~|V<br>±20<br>~~ee~~<br>~~|~~<br>~~ee~~|V|
|Power dissipation<br>_P_<br>~~ee~~|_P_tot<br>~~ee~~|_T_C=25 °C<br>~~ee~~|W<br>255<br>~~ee~~|W|
|Operating temperature<br>_T_<br>~~ee~~<br>~~|~~<br>~~ee~~|_T_j<br>~~ee~~<br>~~|~~<br>~~ee~~|~~ee~~<br>~~|~~<br>~~ee~~|°C<br>-40 ... 150<br>-40 ... 150<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~ee~~|°C|
|Storage temperature<br>_T_<br>~~ee~~<br>~~ee~~|_T_stg<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|||
|Mounting torque<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|M3 and M3.5 screws<br>~~ee~~<br>~~ee~~|60<br>Ncm<br>~~ee~~<br>~~ee~~|Ncm|



Rev. 2.0 

page 1 

2010-02-15 

**IPW60R099CPA** 

**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Continuous diode forward current|_I_S|_T_C=25 °C|18|A|
|Diode pulse current1)|_I_S,pulse||93||
|Reverse diode d_v_/d_t_ 3)|d_v_/d_t_||15|V/ns|



Reverse diode d _v_ /d _t_[3)] 

|**Parameter**<br>**Thermal characteristics**<br>~~ee~~|**Symbol **|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~eel~~|
|---|---|---|---|---|---|---|
|Thermal resistance, junction - case|_R_thJC||-|-|0.5|K/W|
|Thermal resistance, junction -<br>ambient|_R_thJA|leaded|-|-|62||
|Soldering temperature,<br>wavesoldering only allowed at leads|_T_sold|1.6 mm (0.063 in.)<br>from case for 10 s|-|-|260|°C|



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|**Static characteristics**|||||||
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=250 µA|600|-|-|V|
|Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=1.2 mA|2.5|3|3.5||
|Zero gate voltage drain current|_I_DSS|_V_DS=600 V,_V_GS=0 V,<br>_T_j=25 °C|-|-|5|µA|
|Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=10 V,_I_D=18 A,<br>_T_j=25 °C|-|0.09|0.105|Ω|
|||_V_GS=10 V,_I_D=18 A,<br>_T_j=150 °C|-|0.24|-||
|Gate resistance|_R_G|_f_=1 MHz, open drain|-|1.3|-|Ω|



Rev. 2.0 

page 2 

2010-02-15 

**IPW60R099CPA** 

|**IPW60R099CPA**|**IPW60R099CPA**|**IPW60R099CPA**|
|---|---|---|
|**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic characteristics**<br>**Values**<br>~~ee~~<br>~~ee~~|||
|Input capacitance<br>Output capacitance|_C_iss<br>-<br>2800<br>-<br>_C_oss<br>-<br>130<br>-<br>_V_GS=0 V,_V_DS=100 V,<br>_f_=1 MHz<br>~~oe~~|pF|
|Effective output capacitance, energy<br>related4)<br>Effective output capacitance, time<br>related5)<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>Gate Charge Characteristics|_C_o(er)<br>-<br>130<br>-<br>_C_o(tr)<br>-<br>340<br>-<br>_t_d(on)<br>-<br>10<br>-<br>_t_r<br>-<br>5<br>-<br>_t_d(off)<br>-<br>60<br>-<br>_t_f<br>-<br>5<br>-<br>_V_DD=400 V,<br>_V_GS=10 V,_I_D=18 A,<br>_R_G=3.3Ω<br>_V_GS=0 V,_V_DS=0 V<br>to 480 V<br>~~es~~<br>~~p|~~<br>~~ft~~<br>~~=EEE~~<br>~~pe~~<br>~~|~~<br>~~**|**~~|ns|
|Gate to source charge|_Q_gs<br>-<br>14<br>-|nC|
|Gate to drain charge|_Q_gd<br>-<br>20<br>-<br>_V_DD=400 V,_I_D=18 A,||
|Gate charge total|_Q_g<br>-<br>60<br>80<br>_V_GS=0 to 10 V||
|Gate plateau voltage|_V_plateau<br>-<br>5.0<br>-|V|



## **Reverse Diode** 

|**Reverse Diode**|||||||
|---|---|---|---|---|---|---|
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=18 A,<br>_T_j=25 °C|-|0.9|1.2|V|
|Reverse recovery time|_t_rr|_V_R=400 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs|-|450|-|ns|
|Reverse recovery charge|_Q_rr||-|12|-|µC|
|Peak reverse recovery current|_I_rrm||-|70|-|A|



- 1) Pulse width _t_ p limited by _T_ j,max 

> 2) Repetitive avalanche causes additional power losses that can be calculated as _P_ AV= _E_ AR* _f._ 

3) _I_ SD≤ _I_ D, d _i_ /d _t_ ≤100A/µs, _V_ DClink=400V, _V_ peak< _V_ (BR)DSS, _T_ j< _T_ jmax, identical low side and high side switch 

4) _C_ o(er) is a fixed capacitance that gives the same stored energy as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

5) _C_ o(tr) is a fixed capacitance that gives the same charging time as _C_ oss while _V_ DS is rising from 0 to 80% _V_ DSS. 

Rev. 2.0 

page 3 

2010-02-15 

**IPW60R099CPA** 

## **1 Power dissipation** 

## **2 Safe operating area** 

**==> picture [482 x 686] intentionally omitted <==**

**----- Start of picture text -----**<br>
P  tot=f( T  C) I  D=f( V  DS);  T  C=25 °C;  D  =0<br>parameter:  t  p<br>300 10 [2] 1 µs<br>limited by on-state 10 µs<br>resistance<br>100 µs<br>200 10 [1]<br>1 ms<br>DC<br>10 ms<br>100 10 [0]<br>0 NA 10 [-1]<br>0 40 80 120 160 10 [0] 10 [1] 10 [2] 10 [3]<br>T  C [°C] V  DS [V]<br>3 Max. transient thermal impedance 4 Typ. output characteristics<br>ZthJC=f(tP) I  D=f( V  DS);  T  j=25 °C<br>parameter:  D=t  p/ T parameter:  V  GS<br>10 [0] 120<br>10 V<br>8 V<br>20 V<br>105<br>0.5<br>90 7 V<br>0.2 10 [-1]<br>75<br>0.1<br>0.05 60 6 V<br>0.02<br>45<br>0.01 10 [-2] single pulse 5.5 V<br>30<br>5 V<br>15<br>4.5 V<br>10 [-3] m2 0<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 0 5 10 15 20<br>t  p [s] V  DS [V]<br>Rev. 2.0 page 4 2010-02-15<br> [W]  [A]<br>P  tot I  D<br> [K/W]  [A]<br>I  D<br> thJC<br>Z<br>**----- End of picture text -----**<br>


Rev. 2.0 

**IPW60R099CPA** 

## **5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=150 °C 

parameter: _V_ GS 

**==> picture [223 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>8 V 7 V<br>10 V<br>20 V<br>6 V<br>40 5.5 V<br>30<br>5 V<br>20<br>4.5 V<br>10<br>0<br>0 5 10 15 20<br>V  DS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


## **7 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=18 A; _V_ GS=10 V 

## **6 Typ. drain-source on-state resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=150 °C parameter: _V_ GS 

**==> picture [222 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5<br>0.4 5.5 V<br>6 V<br>6.5 V<br>7 V<br>0.3 5 V<br>20 V<br>0.2<br>0.1<br>0<br>0 10 20 30 40 50<br>I  D [A]<br>]<br>Ω<br> [<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


## **8 Typ. transfer characteristics** 

_I_ D=f( _V_ GS); | _V_ DS|>2| _I_ D| _R_ DS(on)max 

parameter: _T_ j 

**==> picture [225 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.3<br>0.25<br>0.2<br>0.15<br>98 %<br>typ<br>0.1<br>0.05<br>0<br>-60 -20 20 60 100 140 180<br>T  j [°C]<br>]<br>[ Ω<br> DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [223 x 264] intentionally omitted <==**

**----- Start of picture text -----**<br>
160<br>25 °C<br>120<br>80<br>150 °C<br>40<br>0<br>0 2 4 6 8 10<br>V  GS [V]<br> [A]<br>I  D<br>**----- End of picture text -----**<br>


Rev. 2.0 

2010-02-15 

page 5 

**IPW60R099CPA** 

**9 Typ. gate charge** 

## **10 Forward characteristics of reverse diode** 

**==> picture [471 x 652] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  GS=f( Q  gate);  I  D=18 A pulsed I  F=f( V  SD)<br>parameter:  V  DD parameter:  T  j<br>12 10 [2]<br>25 °C, 98%<br>10 150 °C, 98%<br>25 °C<br>150 °C<br>8 120 V 10 [1]<br>400 V<br>6<br>4 10 [0]<br>2<br>0 i 10 [-1]<br>0 10 20 30 40 50 60 0 0.5 1 1.5 2<br>Q  gate [nC] V  SD [V]<br>11 Avalanche energy 12 Drain-source breakdown voltage<br>E  AS=f( T  j);  I  D=11 A;  V  DD=50 V V  BR(DSS)=f( T  j);  I  D=0.25 mA<br>800 700<br>600 660<br>400 620<br>200 580<br>0 540<br>25 75 125 175 -60 -20 20 60 100 140 180<br>T  j [°C] T  j [°C]<br> [V]  [A]<br>V  GS I  F<br> [V]<br> [mJ]<br> AS<br>E  BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Rev. 2.0 

page 6 

2010-02-15 

**IPW60R099CPA** 

**13 Typ. capacitances** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

## **14 Typ. Coss stored energy** 

_E_ oss _=_ f _(V_ DS _)_ 

**==> picture [465 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [5] 20<br>10 [4] 16<br>Ciss<br>10 [3] unit 12<br>Coss<br>10 [2] 8<br>10 [1] Sue 4<br>Crss<br>10 [0] EEE: 0<br>0 100 200 300 400 500 0 100 200 300 400 500 600<br>V  DS [V] V  DS [V]<br> [µJ]<br>  [pF]<br>C  oss<br>E<br>**----- End of picture text -----**<br>


Rev. 2.0 

2010-02-15 

page 7 

**IPW60R099CPA** 

## **Definition of diode switching characteristics** 

Rev. 2.0 

page 8 

2010-02-15 

**IPW60R099CPA** 

**PG-TO247-3: Outlines** 

**==> picture [26 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.105<br>**----- End of picture text -----**<br>


Rev. 2.0 

page 9 

2010-02-15 

**IPW60R099CPA** 

## Published by 

Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.0 

page 10 

2010-02-15 

## **NOTIFICATION** 

## **N° 040/10** 

## **Information on N-Channel MOSFET products designed for automotive applications** 

## **Products affected:** 

## **SalesName** 

## **Package** 

IPB60R099CPA PG-TO263-3-2 IPB60R199CPA PG-TO263-3-2 IPB60R299CPA PG-TO263-3-2 IPC60R075CPA Bare Die IPI60R099CPA PG-TO262-3-1 IPP60R099CPA PG-TO220-3-1 IPW60R045CPA PG-TO247-3-41 IPW60R075CPA PG-TO247-3-41 IPW60R099CPA PG-TO247-3-41 

## Dear Customer, 

The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. 

Please take care that in the context of the application described above the datasheet limits are not exceeded. 

Best Regards 

Michael Paulu 

If you have any questions, please do not hesitate to contact your local Sales office. 

Page 1 of 1 

2010-05-12 



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- [Supplier page](https://es.farnell.com/infineon/ipw60r099cpafksa1/mosfet-aec-q101-n-ch-600v-31a/dp/3155121)
---

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