# Power MOSFET, N Channel, 150 V, 143 A, 4600 µohm, HSOF, Surface Mount

![Product image](https://novapart.co/image/farnell:3922536/)

**URL**: https://novapart.co/products/IPT054N15N5ATMA1/power-mosfet-n-channel-150-v-143-a-4600-ohm-hsof
**SKU**: IPT054N15N5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8700
**Stock**: 200+
**Lead Time**: 85 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | HSOF |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 143A |
| Drain Source On State Resistance | 4600µohm |
| Gate Source Threshold Voltage Max | 3.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3922536/)

oe Infineon 

IPTO54N15N5 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

## Features 

- N ~~-~~ channel 

- ¢ Very low on ~~-r~~ esistance Rosvon) 

- ¢ Superior thermal resistance 

- 100% avalanche tested 

- Pb ~~-f~~ ree lead plating; ROHS compliant 

- * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

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HSOF<br>Tab<br>12,<br>“56,<br>8<br>**----- End of picture text -----**<br>


## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

## ~~Table 1. | Key Performance Parameters~~ 

~~Qn esSSC~—~—zROSCSC‘*”S~~ 

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@ ROHS<br>**----- End of picture text -----**<br>


~~IPTO54N15N5~~ 

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PG-HSOF-8<br>**----- End of picture text -----**<br>


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O4N15N5 |<br>**----- End of picture text -----**<br>


Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO54N15N5 

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.)_—<br>In feneon<br>**----- End of picture text -----**<br>


## 1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Table|2_—/|Maximum|ratings|
|m|aramet|er|symbol|Note/|Test|Condit|
|ymbo|Min.|_|Typ.|[Max._||ote /|Test|Condition|
|143|Ves=10|V,|Tc=25|°C|
|Continuous|drain|current”|Ib|101.||A|Ves=10|V,|Tc=100|°C|
|17.5|Ves=10V, Ta=25°C,|Rinsn=40°C/W”)|
|Avalanche|energy,|single|pulse”)|Ess ==|sesft90—|ms|Ip=100|A,|Res=25|QO|

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## 2 Thermal characteristics 

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Table 3_— Thermal characteristics<br>m aramet er Symym bo l jaeMin. | it N o te I T e stst ConditionCondit<br>Typ. [Max._|<br>Thermal resistance, junction - case Rc see ft -<br>Thermal resistance, junction - ambient, °<br>6 cm* cooling area ec<br>Thermal resistance, junction - ambient, °<br>minimal footprint” ron ff foe om<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev ~~.~~ 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO54N15N5 

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.)_—<br>Cin fjneon<br>**----- End of picture text -----**<br>


## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.aeTyp.|[Max._|it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|lVeross|[150||-|[-|[vi|Ves=0|V,|lb=1|mA|
|Gate|threshold|voltage|Vos= Ves,|fo=181|WA|
|Zero|gate|voltage|drain|current|ss|||A|100|Vn|490|y|aa|y|7a438|So|
|Gate-source|leakage|current|Hess||e|[10|100,|[nA|Ves=20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Rosny|no|a|Vesa|V|kee|
|Transconductance|lo|||jo|||ls||||Vos|22|/p|Rosionymax,|!>=50|A|
|Table|5|Dynamic|characteristics|
|P|aramet|er|Symym|bo|l|jaeMin.|_|Typ.|[Max._it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance’|Css|—'|-—-—-[4100_[5300|Ves=0|V,|Vos=75|V,|f=1|MHz|
|Output|capacitance”|ICs|—|--—-|[4000|[1300|Ves=0|V,|Vos=75|V,|f=1|MHz|
|Reverse|transfer|capacitance”|Ce|ee|ee|Ves=0|V,|Vos=75|V,|fH1|MHz|
|sext™|T.|
|ext|I.|
|Table|6|Gate|charge|characteristics”)|
|Gatep|aramet|er|Syy|mbo|l|Min.NONTye. [MaxUntote /||TeTe t|s|t|ConditionCondit|
|to|source|charge|lasses|nc|Vpop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Gate|charge|at|threshold|lam|fe|ft.|[fn|Vop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Gate|to|drain|charge”|las|eft|[16.7|[nc|||Vpop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Switching|charge|Qn||e|ft8.2 |||nC|—[Von=75|V,|Ip=50|A,|Vos=0|to|10|V|
|Gate|charge|total”|la,|sds|s55|[69|nC]|Von=75|V,|Io=50|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Veen|[>||5B|Vop=75|V,|Ip=50|A,|Ves=0|to|10|V|

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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO54N15N5 

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Cininfineon L<br>**----- End of picture text -----**<br>


## 4 Electrical characteristics diagrams 

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280 150<br>a a A<br>SSS SS SS A<br>2 4 0077 125 ~—_+- —__X__| —_| —_| |<br>p__}|a \ ff ff eS<br>A A ———————<br>200 +} — K| | a<br>a a SC<br>a ee ee ee 100 F—_<br>a a Fr [ | | {[NX]{ |] T<br>a eSSS<br>= ." fr < ES<br>qin3  Poofa ATUN =& 75 eSSS A<br>a A a CC<br>rr |. -.. - TNT. ff. PTC CQ<br>ee<br>ee a a ee Pf<br>a fA<br>aa A eefp}[pp> +—__} 1 +—<br>4o--_—__|—_|| | | \ | oCshOV<br>a A -<br>Fe aA Pe a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>Tc [°C] Tc [°C]<br>10 ae 10  ooo<br>— ST Nsust ‘|—-+] 0single . 01 pulse "a}}/—}—--HHH HH HHH<br>SATS SIT |--- 0 . 02 1101<br>CNT NY NS ll [|e 0.05 HM TTETT<br>OSS pe EE (2283 0<br>SSSA m c<br>\ » 10° SS A A A A TIM EAM | il<br>ro LL NEAINE Se eee ee<br>< a S eTher a TTI I<br>Se Natt) sof gs LIern<br>ean aussie |, Ca?<br>TC TTI<br>SS SS SS SSS SS SEE: ay<br>S e | Se HHH<br>eos a ee AAI TUT ETI EMT TUT<br>wo e nhJL LE ETEL 0 ANNa<br>10° 10! 10? 10° 10 ° 10 + 10 ° 10 7 10 " 10°<br>Vos [V] t [s]<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

IPTO54N15N5 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

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CiT n fitneon<br>**----- End of picture text -----**<br>


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Diagram 5: Typ. output characteristics Diagram 6: Typ . drai n- source on resistance<br>EEE) ECE<br>PPP rrr er COCCI<br>soottit{ PEP PP yy eee COCCI vc<br>PEa{itt tt tt tt reat ttestt |Vv es CCC<br>SEE eH SEESVEE<br>HK  EEE CEE CECE SO00008SOS<br>{ tf ee Le ee<br>too LEELA |<br>PEt tt te tT tT TT Yt YET ttt tt / L<br>ee ee ee<br>a ee<br>so COA eee<br>s ——}|—- f+} | J& Fe+H++—-++—-+} ||<br>BGS © 40 e 5 ECC Cee<br>200 SCPPAALAyy oHeos “|e 8 CeeeeePEE| eeeeri<br>PLLA ELE A 4 EOE<br>REAR EH CACC<br>Se // 4088 CECCCC<br>100 TAYE IEEE EEEEELELLELELELEL-_ I LET TTT ttt ttt ttt tt eit ee tT yy<br> fey ott TTT TTT TTT TTT TT TT TTT<br>ff >> SEES CECCCC<br>)<br>0 PF E ESEEEEEEEEEEEEEEEEEE)E EEE EE EE EEE EE EEE ESS vy Po 9 ERECEECEESEEEELCCAPEE eeEE<br>0 1 2 3 4 5 0 50 100 150 200 250 300<br>Vos [V] bb [A]<br>lb=f(Vos), T7=25 °C; parameter: Ves Rosvon)=f(/p), T7=25 °C; parameter: Ves<br>Diagram 7: Typ. transfer characteristics Diagram 8: Typ . drai n- source on resistance<br>20 COE TTT TTT TILL LLL “7TTTITIPLeELEeeeEee | LL LL<br>COEEECEE Cece A<br>ee pee a<br>COCCEEFOEEEC E C eeeee ErTEEPE ATKars fteeP<br>FOE ECE OO<br>900 EECA EEE EEEEEE Pee A A<br>COEEECE eee a<br>COEEECE Eee a<br>SR ee a<br>too COLE fe SP<br>_ POPP) |g a<br>< Oe ee ee |<br>a COCCPCeeeeee eso} a<br>7 ee)ee eee eeee<br>PO) OO<br>COEEECEE eee OS<br>COCPPCeee eee vee eee ee<br>Po ee , OEE<br>COE ee eee<br>COE Cee eefee ert yt tse atitre rt tT<br>COEEECEE eee a<br>40 COPE isc Pe a a<br>CCCEeCeeeCOEEECEeeee eeeer ff 25°.CT a<br>COCPPCEE eee Ve a<br>9 PLCC Pe a a<br>0 1 2 3 4 5 6 7 0 5 10 15 20<br>Ves [V] Ves [V]<br>Ib=f(Ves), |Vos|>2|/o|Ros(onymax; parameter: T; Rosvon)=f(Ves), [5=50 A; parameter: T;<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

CiTT **n** fitneonneon ; 

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OptiMOS™ 5 Power- T ransistor, 150 V CiTT n fitneonneon<br>IPTO54N15N5<br>Diagram 9: Normalized drai n- source on resistance Diagram 10: Typ . gate threshold voltage<br>24<br>PEC POE<br>oof FTA PTPRS<br>“TOCCATAPEC gtPETtT Pe TT TTPRATTPAPTT ET TT<br>> POCO FEET TTT TTT PA Pe ET<br>os CCCECEE A/ PET EEPSPS>» SN<br>ee 16 Tee4) PITT TTT TTT TT TTT TPNSY PATN TTT<br>@ = CO OPCO af {-—LHt st<br>@ es ee HEEHEHot<br>OCD)A fe OH<br>2Bo 42i. 5 =P PEPEas \<br>£ yy 8 181 pA<br>E PPCers PC<br>eB° POAA 2 FCCC eee<br>=§ LETT TE beet EEE EEE EEE FTPEPeeeeELEEL ELLE LELLLLLLLL<br>2 8 TTT CCAP<br>& LTT TTea TT TTT TTT TTT TEE TT TE TT tT OePEEPeeeEEE EEE<br>LET TTT TEE EET EEE Ee EEE FEEL<br>04 PEC 1 POPPE<br>PECL POEL ELLE LLL<br>PEC ECE<br>PEPE PEPE<br>oo  LLCO 9 LOECECEECP<br>- 80 - 40 0 40 80 120 160 200 - 80 - 40 0 40 80 120 160 200<br>7, [°C] T, [°C]<br>Rosion)=f(7j), [p>=50 A, Ves=10 V Vesith=f(7j), Ves= Vos; parameter: /p<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>10"4 PERE (0) 3 FESS EEE EEE<br>LT TTT tT tT tT tT tt tt de ee —— 25 °C rT yy tt tT te tt tet ee<br>(TT TTT ttt tT tT tet tet tT et tt te eT | ° ERREee<br>(TTT TTT ttt ttt tt Tet ty tt Pet et ee tT [}—-—25°C,max [TTT tyr yy yyy | bes<br>RESPECT TT TTT Tiss [}—-=-- 175°C PET TT | eet | |<br>SERSSCUCEeCHeePEEC<br>oN. IT) | Peereeeeer E e<br>EEEEL EERRRRREER ya 2<br>10 TPT, vf<br>ERR EEE EEE EEE SRE EEE EEE EE 10 ERR<br>Ti ALitEEEEEEEEEEEEEEtt ttt te tet tt EEEeeeETT reree toss eeeeReeeeeeeee)eeeReeeee eeeeeeeee eee<br>Ss NT TTT TTT TT eet yt yet yy ey ey _ LTT TTT ttt tt tite tA TT<br>° ACCC = FOO oF<br>AN COTAORTORTORTOTTORTORTRITAN * a MULE<br>eT)BERR RENEE EEE EEE | LEELABREE EE LAE<br>eeeeee eeee eee eee<br>See N eee ee eee eee (TTT tT Ty tT Tet tet Ur it tT TT tt th tT<br>FLT PT TTT TPNNee LL_TTTBERR TT tt tat yet yyeee TT e d ee eTr TT<br>PCTS POCO<br>SE PEELE EEE<br>Crss'<br>wo 0 ULL25 50 75 100 ero}125 150 0.00FLEE0.25 0.50 0.75 ET1.00 ET1 EL. 25 1 . 50<br>Vos [V] Vsp [V]<br>C=f(Vps); Ves=0 V; 1 MHz IF=f(Vsp); parameter: T;<br>Data Sheet 8 Rev . 2 . 0, 2021 -0 9 - 10<br>**----- End of picture text -----**<br>


Final Data Sheet 

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OptiMOS™ 5 Power- T ransistor, 150 V CiT n fitneon ;<br>IPT054N15N5<br>Diagram 13: Avalanche characteristics Diagram 14: Typ . gate charge<br>10° -o rr ee cee | y<br>PT —-75V AR<br>ee i PTT TTT TTT TT ETT TTA TT<br>eT TT maa120 V t e7<br>gL TTT TTT TT TTT TT Yee TT TT<br>oe LUTE IIE LIE LI SRUSERUSR00ER00000080 47G000008<br>CTPSCCCCI SsSIE NXSST SCSS28° eTT T HTTTVAVieli iit type<br>><Z 10' TINSSCOMMIT TTNICOSSUUITt LN |==|S THLEEEECESEE E / ERZn  H R EELEE<br>|| || || hn 100 ° °C ,<br>EH<br>es en TL150 °C . S00) S00 0GGRe<br>Ce LITA LT TTT TT TT TE EE TE TT<br>en ll YH HHH<br>o o LLIN EINEEINE (ZEEE<br>10 " 10° 10' 10? 10° 0 10 20 30 40 50 60<br>tav [Us] Qgate [NC]<br>Ins=f(tav); Res=25 Q; parameter: T;,start Ves=f(Qgate), [>=50 A pulsed, 7j=25 °C; parameter: Vop<br>Diagram 15: Drain - source breakdown voltage Diagram Gate charge waveforms<br>a a PS<br>rT eee ea<br>rT TT TT ererere TTT T tTTTTT err Tt T rrT t TATYT TT<br>158 TTT TTT rere TTT Tt Terr Tt TT ye TT Ves<br>TTT TTT rere TTT TT TTT Tt Tr TY rT rT<br>SeSeeeeeee<br>rT TT TPEeeeTTT TTT TTT tT tT TA aeTr rT Q g<br>156 (rt tTTTTTtTIT ttt t ttt tTrtTit Tye tt tT Tt i<br>f(trte [tETtTtrtrTITtttt] ttt ttt APT TT tT tT Tt it<br>rT tet tte tt tt tt Tt tt Pia TT TT<br>rT TT TT ere TTT TTT TTT TyA T Tr T rt yrrTrt Tf<br>154 TTTee TT Tei tT TT TTT TTA Aehhh hh Tf<br>= ERE EEE EEE EEE DALE EE EEE EEE<br>Pal rrrrrr+irrrrttltfr+fi vArrrrertitreeieei<br>= 152 TTT TTT rerTeT TTT TTA TT TT TT er rT<br>g TTT TTT rere TTT TT YT TTT TT yr er rt<br>a rT TTT TrereT TT TIA TT rr rT<br>eo nD Ane<br>$ a eee<br>150 See eee<br>TTT TTTreti TT YT TT TTT TTT TT ThE hh Tf<br>PEt te rt_e Peet ITT tT et ep tr EE ETT<br>rTrT [TTTTrerTrTATT] TT Tyr rT rr TT<br>TTT TTT y TTT Tt tT er ty rd er rT<br>rT TTTTYy TTT TT TTT ttt TT rr rt<br>148 [Pe] TTTee PPTTTTTA T T r 42erTYtp taTTTeeetT TTTeere ee TTTyt er tttre  rt dTrt er re //<br>146 [tT Ti TA TT et tT tt tT TTT TT TT TT TT Q<br>nD 40 eee g(th) Q gate<br>TTT YET Tt Tt TTT ttt Tt Tt yr re Tf<br>TTIJAZA TTT TTT TTT Trt tt Tt er re To<br>rT TT TT rere TTT Tt TT Tr tt Tt ter rt<br>144 rT TTT TErtrTttrTyT tT try tt Pt Tt tT Tt Tf Polo. | Qu<br>- 80 - 40 0 40 80 120 160 200<br>T, [PC]<br>Varcossy“1(Ti); fo=1 mA Co<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V IPTO54N15N5 

CiT **n** fitneon 

## Revision History 

IPTO54N15N5 

## Revision: 2021 ~~-0~~ 9 ~~-1~~ 0, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~09~~-~~10||||Release|||offinalversion|||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 



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---

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