# Power MOSFET, N Channel, 150 V, 190 A, 3300 µohm, HSOF, Surface Mount

![Product image](https://novapart.co/image/farnell:3922533RL/)

**URL**: https://novapart.co/products/IPT039N15N5ATMA1/power-mosfet-n-channel-150-v-190-a-3300-ohm-hsof
**SKU**: IPT039N15N5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1700
**Stock**: 500+
**Lead Time**: 162 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | OptiMOS 5 Series |
| Qualification | - |
| Power Dissipation | 319W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | HSOF |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 190A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 3.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3922533RL/)

oe Cinfineon 

IPTO39N15N5 

## OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

## Features 

- N ~~-~~ channel 

- ¢ Very low on ~~-r~~ esistance Rosvon) 

- ¢ Superior thermal resistance 

- 100% avalanche tested 

- Pb ~~-f~~ ree lead plating; ROHS compliant 

- * Halogen ~~-f~~ ree according to IEC61249 ~~-2-2~~ 1 

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HSOF<br>Tab<br>12,<br>“56,<br>8<br>**----- End of picture text -----**<br>


## Product validation 

Fully qualified according to JEDEC for Industrial Applications 

~~Table 1. | Key Performance Parameters~~ 

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@ ROHS<br>**----- End of picture text -----**<br>


## ~~IPTO39N15N5~~ 

~~PG-HSOF-8~~ 

~~O30N15N5) |~~ 

Final Data Sheet 

1 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO39N15N5 

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1 Maximum ratings at Ta=25 °C, unless otherwise specified 

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Table 2_—/ Maximum ratings<br>p aramet er symbol Note/ Test Conditi<br>ymbo Min. Typ. [Max._ ote / Test Condition<br>190 Ves=10 V, Tc=25 °C<br>Continuous drain current") lp 133 A Vea et00 eC<br>21 Ves=10V, Ta=25°C, Rinsa=40°C/W?)<br>Avalanche energy, single pulse’) lExss |= se [285 [ms Ib=100 A, Res=25 Q<br>Operating and storage temperature Tite 8 | a7 fro | hadie category; DIN IEC 68-1:<br>2 Thermal characteristics<br>Table 3_— Thermal characteristics<br>p aramet er symbol Note/ Test Condit<br>ymbo Min. Typ. [Max._ ote / Test Condition<br>Thermal resistance, junction - case Rc =e sft. ecw -<br>Thermal resistance, junction - ambient, °<br>minimal footprint fou foe fom<br>Thermal resistance, junction - ambient, °<br>6 cm? cooling area’? Fon Fao Fon ;<br>**----- End of picture text -----**<br>


> ‘) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified ~~.~~ For other case temperatures please refer to Diagram 2 ~~.~~ De ~~-r~~ ating will be required based on the actual environmental conditions. 

> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70 um thick) copper area for drain connection. PCB is vertical in still air. 

3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO39N15N5 

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.)_—<br>Cin fjneon<br>**----- End of picture text -----**<br>


## 3 Electrical characteristics at Tj=25 °C, unless otherwise specified 

## Table 4 Static characteristics 

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||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|m|aramet|er|Symbol,ymbo|Min.aeTyp.|[Max._|it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Drain-source|breakdown|voltage|lVeross|[150||-|[-|[vi|Ves=0|V,|lb=1|mA|
|Gate|threshold|voltage|Vos= Ves,|fo=257|WA|
|Zero|gate|voltage|drain|current|ss|||A|100|Vn|490|y|aa|y|7a438|So|
|Gate-source|leakage|current|Hess||e|[10|100,|[nA|Ves=20|V,|Vos=0|V|
|Drain-source|on-state|resistance|Rosny|33|33|Vesa|V|kee|
|Transconductance|lo||.|fro|Fs||Vos|22|/b|Ros(onymax,|Ip>=50|A|
|Table|5|Dynamic|characteristics|
|P|aramet|er|Symym|bo|l|jaeMin.|_|Typ.|[Max._it|N|o|te /I|TeTe t|s|t|ConditionCondit|
|Input|capacitance’|Css|=|[5900._|[7700|Ves=0|V,|Vos=75 V,|f=1|MHz|
|Output|capacitance”|ICs|——'|-___-|4500.|[2000|Ves=0|V,|Vos=75|V,|f=1|MHz|
|Reverse|transfer|capacitance”|Css|ss|[-—s«(38|(58|pr|Ves=0|V,|Vos=75|V,|fH1|MHz|
|sext™|T.|
|ext|I.|
|Table|6|Gate|charge|characteristics”)|
|Gatep|aramet|er|Syy|mbo|l|Min.NONTye. [MaxUntote /||TeTe t|s|t|ConditionCondit|
|to|source|charge|lassen|Vpop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Gate|charge|at|threshold|lam|fe|sf22|en|Vop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Gate|to|drain|charge”|las|se|*ft5|[23|[nc|Vpop=75|V,|Ip=50|A,|Ves=0|to|10|V|
|Switching|charge|Qn|||fz|fe||n|||Von=75|V,|fo=50|A,|Vos=0|to|10|V|
|Gate|charge|total”|la,sss|78|98|nC]|Vo=75|V,|Io=50|A,|Ves=0|to|10|V|
|Gate|plateau|voltage|Veen|[>|s*|53|Vop=75|V,|Ip=50|A,|Ves=0|to|10|V|

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> ’) Defined by design. Not subject to production test. 2) See “Gate charge waveforms” for parameter definition Final Data Sheet 

4 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V 

IPTO039N15N5 

## 4 Electrical characteristics diagrams 

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Final Data Sheet 

6 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V IPTO039N15N5 

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Final Data Sheet 

7 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- T ransistor, 150 V Cii n fineon ;<br>IPTO39N15N5<br>Diagram 9: Normalized drai n- source on resistance Diagram 10: Typ . gate threshold voltage<br>2.4 5<br>Ae)<br>PETE E EEE TT ETL LEE ELLA PT TTT TTT TTT TTT TTT TTT TT<br>sot tt TTT TTT TT TE TT Pt [aah eet TT TTT TET  T<br>“TOCCATA attPeete<br>LTT TTT TTT TTT TTT TTT TTA LETT LET TT TT PPAPe<br>se(Ss) PLCC PHT TTT TT TT Pe tT<br>$ LTT TTT TT TT TTT PAA LANL EEE TTT<br>ee16 CCCZ tee SSSNY ~~<br>e = OCP eee af {—LHLL st<br>@ GOCCP e e HEE<br>So Coots s<br>2= 421. 7 4 = NeN<br>£ B ° CPCyy, 8ag eeeee co 257 WA<br>eS SRP Aex 2 ECE<br>¢ os HH rTEE CCEA eee<br>§ OTT Pere EEELEEELEEA EE eee<br>& TET TTT TTT TTT ETT TET ET TT TT PEEP EEE EEE<br>oat LTT ITtt TTT TTTTTT TTT TTT tTTTTTT TT  TTTTT TTTTT TTTTTTTLT TT , FEEEEEELEELELLEELLELLELLELEELLLLTCCEEEEEELLEE<br>TET TTT TTT TTT ETT TTT TET ETT TT TCE<br>LETT TT ET EET TTT TTT TTT TTT TTT<br>PET EET TTT TET EEE EET ELE LTT TT TTT TTT TT TTT TTT<br>o o t LLiT ITT tit tit titty tt tt ttt o LITT TTT Titi titty titty ti tt ttt<br>- 80 - 40 0 40 80 120 160 200 - 80 - 40 0 40 80 120 160 200<br>7 PC] T, PC]<br>Rosion)=f(7j), [p>=50 A, Ves=10 V Vesith=f(7j), Ves= Vos; parameter: /p<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>ee4 ee LE  ee 3 ae ae eer ae ee ee<br>ee ee eeeeeei | 25°C Vt Tt pT Tt tt dd ae<br>REEPSCC eee ciss |[}—- —25°C,max° iyEL TTTTTT Ttty tT tt tt ttpoetaPK tT<br>HE CECE q---475°° ECC eA<br> Pe fev 175 °C,max } | || | | eet | | |<br>4<br>GAAANONAADDASSCUOOHOATONNNUNL S T 7 eH<br>aTT | 10° ETTSSSR SSE EERE4 Reeer<br>PEEAT | Tt tT tet Tl TTT El ll Eh TT Coss L ttf t ft |ttttttt tt ttt ttletT et et Tet tT tT ht TT<br>ACCC} SOS<br>im AL Tee TT EET TT eet tt te tt tt tt tt LTT ttt ttt ttt it tt eetee yet tT tt TT<br>& PNUTTET TTT ETT TTT TTT ttt ttt Tt) ys eeee<br>° TE SEE EEE<br>10°NET). LEE EEE<br>“SEER EEE AS SESE SER ESSERE SEE SESE 10° SSE EES SS SRE GPSS SSS ESSE SS<br>A OR SO OG GN GS SD ee ee |eeee<br>(TT TTT tet tT TAT TT eT tT tt tt tt eT (TT TTT Ty tT tal Tt ie tt tT tt tt<br>RRNDCERES BERRee eee<br>SORE eee CCC Ce<br> O RRO RR ORD SSO RRR RRR ERREERE LETT TT TTT eT EE EEE<br>TEETER UFTADTAGPRC/GGRRGUTAORTAURTA<br>10' UE EEE) ) |10° LEE PUPEEE<br>0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1 . 25 1 . 50<br>Vos [V] Vsp [V]<br>C=f(Vps); Ves=0 V; 1 MHz IF=f(Vsp); parameter: T;<br>Data Sheet 8 Rev . 2 . 0, 2021 -0 9 - 10<br>**----- End of picture text -----**<br>


Final Data Sheet 

## OptiMOS™ ~~IPTOSQN15N5 5 Power-Transistor, 150 V~~ 

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Final Data Sheet 

9 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 

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OptiMOS™ 5 Power- ~~T~~ ransistor, 150 V IPTO39N15N5 

CiT **n** fitneon 

## Revision History 

IPTO39N15N5 

## Revision: 2021 ~~-0~~ 9 ~~-1~~ 0, Rev ~~.~~ 2.0 

|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|Previous Revision|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Revision|||||||Subjects|||(major changes since last revision)|||||||||
|2.0||||2021~~-~~09~~-~~10||||Release|||offinalversion|||||||||



Trademarks All referenced product or service names and trademarks are the property of their respective owners. 

## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ~~.~~ Please send your proposal (including a reference to this document) to: erratum@infineo ~~n.~~ com 

Published by Infineon Technologies AG 81726 Miinchen, Germany © 2020 Infineon Technologies AG All Rights Reserved ~~.~~ 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) ~~.~~ 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ~~-i~~ nfringement of intellectual property rights of any third party ~~.~~ 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications ~~.~~ 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application ~~.~~ 

## Information 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office ~~.~~ 

The Infineon Technologies component described in this Data Sheet may be used in lif ~~e~~ -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lif ~~e~~ -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

11 

Rev ~~.~~ 2 ~~.~~ 0, 2021 ~~-0~~ 9 ~~-~~ 10 



## Links

- [View this product on Novapart](https://novapart.co/products/IPT039N15N5ATMA1/power-mosfet-n-channel-150-v-190-a-3300-ohm-hsof)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ipt039n15n5atma1/mosfet-single-190a-150v-319w-hsof/dp/3922533RL)
---

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