# Power MOSFET, N Channel, 100 V, 300 A, 2000 µohm, HSOF, Surface Mount

![Product image](https://novapart.co/image/farnell:2480869RL/)

**URL**: https://novapart.co/products/IPT020N10N3ATMA1/power-mosfet-n-channel-100-v-300-a-2000-ohm-hsof
**SKU**: IPT020N10N3ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8000
**Stock**: 1000+
**Lead Time**: 71 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | HSOF |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 300A |
| Drain Source On State Resistance | 2000µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480869RL/)

**IPT020N10N3** 

## **OptiMOS[TM] Power-Transistor** 

## **Product Summary** 

## **Features** 

- N-channel, normal level 

- Excellent gate charge x _R_ DS(on) product (FOM) 

|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|
|||V|
|_V_DS|100||
|||mW|
|_R_DS(on),max|2.0||
|||A|
|_I_D|300||



- Extremely low on-resistance _R_ DS(on) 

- High current capability 

|• 175 °C operating temperature<br>• Pb-free lead plating; RoHS compliant<br>• Qualified according to JEDEC<br>• Halogen-free according to IEC61249-2-21|• 175 °C operating temperature<br>• Pb-free lead plating; RoHS compliant<br>• Qualified according to JEDEC1)for target application<br>• Halogen-free according to IEC61249-2-21<br>|<br>—<br>FIND)|• 175 °C operating temperature<br>• Pb-free lead plating; RoHS compliant<br>• Qualified according to JEDEC1)for target application<br>• Halogen-free according to IEC61249-2-21<br>|<br>—<br>FIND)|
|---|---|---|
||Type<br>IPT020N10N3|4|
||Tab<br>“<br>L<br>L-<br>yQYy “LL||
||||
||Package<br>PG-HSOF-8||
||||
||Marking<br>020N10N3||



**Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**|
|---|---|---|---|---|
|Continuous drain current|_I_D|_T_C=25 °C2)|300|A|
|||_T_C=100 °C|212||
|Pulsed drain current2)|_I_D,pulse|_T_C=25 °C|1200||
|Avalanche energy, single pulse|_E_AS|_I_D=150 A,_R_GS=25W|800|mJ|
|Gate source voltage|_V_GS||±20|V|
|Power dissipation|_P_tot|_T_C=25 °C|375|W|
|Operating and storage temperature|_T_j,_T_stg||-55 ... 175|°C|
|IEC climatic category; DIN IEC 68-1|||55/175/56||



- 1)J-STD20 and JESD22 

- 2) See figure 3 

Rev. 1.1 (preliminary datasheet) 

page 1 

2013-08-12 

**IPT020N10N3** 

|**Parameter**<br>**Symbol Conditions**<br>**min.**<br>**typ.**<br>**Values**<br>~~eel~~|**max.**<br>~~eel~~|**Unit**<br>~~eel~~|
|---|---|---|
|~~eel~~|~~eel~~|~~eel~~|
|**Thermal characteristics**|||
|Thermal resistance, junction - case<br>_R_thJC<br>-<br>-|0.4|K/W|
|Thermal resistance,<br>_R_thJA<br>minimal footprint<br>-<br>-|62||
|junction - ambient<br>6 cm2cooling area3)<br>-<br>-|40||
|**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|||
|**Static characteristics**|||
|Drain-source breakdown voltage<br>_V_(BR)DSS _V_GS=0 V,_I_D=1 mA<br>100<br>-<br>-<br>Gate threshold voltage<br>_V_GS(th)<br>_V_DS=_V_GS,_I_D=272 µA<br>2<br>2.7<br>3.5<br>Zero gate voltage drain current<br>_I_DSS<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>0.1<br>1<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>10<br>100<br>Gate-source leakage current<br>_I_GSS<br>_V_GS=20 V,_V_DS=0 V<br>-<br>1<br>100<br>Drain-source on-state resistance<br>_R_DS(on)<br>_V_GS=10 V,_I_D=150 A<br>-<br>1.7<br>2.0<br>_V_GS=6 V,_I_D=75 A,<br>-<br>2.2<br>3.7<br>~~ee~~<br>~~ee eee~~<br>~~ee~~<br>~~ee eee~~<br>~~—ss~~<br>~~fT~~<br>~~|~~<br>~~ee eee~~<br>~~Be~~<br>~~a~~||V<br>µA<br>nA<br>mW|
|Gate resistance<br>_R_G<br>-<br>1.9<br>-<br>Transconductance<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=150 A<br>125<br>250<br>-<br>3)Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain<br>~~ee~~<br>~~ee eee~~<br>~~|~~<br>~~ftft~~||W<br>S<br>(one layer, 70 µm thick) copper area for drain|



3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Rev. 1.1 (preliminary datasheet) 

page 2 

2013-08-12 

**IPT020N10N3** 

||Cinfineon|Cinfineon|Cinfineon|Cinfineon|Cinfineon|Cinfineon|Cinfineon|Cinfineon|
|---|---|---|---|---|---|---|---|---|
||Cinfineon||||||||
||||||||||
|||**Symbol **|**Conditions**|**Values**||**Values**|||
|||||**min.**|**typ.**|**typ.**|**max.**||
||**Dynamic characteristics**||||||||
|Input capacitance|Input capacitance<br>~~|~~|_C_iss<br>~~3|~~|_V_GS=0 V,_V_DS=50 V,<br>_f_=1 MHz|-<br>~~PE~~|11200<br>~~PE~~|11200<br>~~PE~~|-<br>~~PE~~|pF|
|Output capacitance|Output capacitance<br>~~|~~|_C_oss<br>~~3|~~||-<br>~~PE~~|2010<br>~~PE~~|2010<br>~~PE~~|-<br>~~PE~~||
|Reverse transfer capacitance|Reverse transfer capacitance<br>~~|~~|_C_rss<br>~~3 |~~<br>~~|~~||-<br>~~PE~~<br>~~PE~~|69<br>~~PE~~<br>~~PE~~|69<br>~~PE~~<br>~~PE~~|-<br>~~PE~~<br>~~PE~~||
|Turn-on delay time|Turn-on delay time|_t_d(on)<br>~~aaa~~<br>~~|}~~|_V_DD=50 V,_V_GS=10 V,<br>_I_D=100 A,<br>_R_G,ext=1.6W<br>~~aaa~~<br>~~|}~~<br>~~||~~|-<br>~~PE~~<br>~~Pe~~|34<br>~~PE~~<br>~~Pe~~|34<br>~~PE~~<br>~~Pe~~|-<br>~~PE~~<br>~~Pe~~|ns|
|Rise time||_t_r<br>~~|}~~||-<br>~~Pe~~|58<br>~~Pe~~|58<br>~~Pe~~|-<br>~~Pe~~||
|Turn-off delay time|Turn-off delay time|_t_d(off)<br>~~|}~~<br>~~||~~||-<br>~~Pe~~<br>~~St~~|84<br>~~Pe~~<br>~~St~~|84<br>~~Pe~~<br>~~St~~|-<br>~~Pe~~<br>~~St~~||
|Fall time||_t_f||-|18|18|-||
||Gate Charge Characteristics4)||||||||
|Gate to source charge|Gate to source charge<br>~~{|}~~|_Q_gs<br>~~{|}~~|_V_DD=50 V,_I_D=100 A,<br>_V_GS=0 to 10 V<br>~~{|}~~<br>~~ee~~|-<br>~~PE~~|48<br>~~PE~~|48<br>~~PE~~|-<br>~~PE~~|nC|
|Gate to drain charge|Gate to drain charge<br>~~{|}~~|_Q_gd<br>~~{|}~~||-<br>~~PE~~|27<br>~~PE~~|27<br>~~PE~~|-<br>~~PE~~||
|Switching charge|Switching charge|_Q_sw||-|42|42|-||
|Gate charge total|Gate charge total|_Q_g||-|156|156|-||
|Gate plateau voltage|Gate plateau voltage|_V_plateau<br>~~a~~||-<br>~~ee~~|4.3<br>~~ee~~|4.3<br>~~ee~~|-|V|
|Output charge|Output charge|_Q_oss<br>~~a~~|_V_DD=50 V,_V_GS=0 V<br>~~ee~~|-<br>~~ee~~|192<br>~~ee~~|192<br>~~ee~~|-|nC|
||**Reverse Diode**<br>~~a~~<br>~~ee ee ee~~||||||||
|Diode continous forward current|Diode continous forward current|_I_S<br>~~—~~|_T_C=25 °C<br>~~fe~~|-<br>~~fe~~|-|-|300|A|
|Diode pulse current|Diode pulse current|_I_S,pulse<br>~~—~~||-<br>~~fe~~|-|-|1200||
|Diode forward voltage|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=150 A,<br>_T_j=25 °C|-|0.89|0.89|1|V|
|Reverse recovery time|Reverse recovery time|_t_rr<br>~~Sy~~|_V_R=50 V,_I_F=_I_S,<br>d_i_F/d_t_=100 A/µs<br>~~Sy~~|-<br>~~Sy~~|86<br>~~Sy~~|86<br>~~Sy~~|~~Sy~~|ns|
|Reverse recovery charge|Reverse recovery charge|_Q_rr<br>~~Sy~~||-<br>~~Sy~~|232<br>~~Sy~~|232<br>~~Sy~~|-<br>~~Sy~~|nC|
||See figure 16 for gate charge parameter definition||||||||



Rev. 1.1 (preliminary datasheet) 

page 3 

2013-08-12 

**IPT020N10N3** 

## **1 Power dissipation** 

_P_ tot=f( _T_ C) 

## **2 Drain current** 

_I_ D=f( _T_ C); _V_ GS≥10 V 

**==> picture [467 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
450  350<br>400<br>300<br>350<br>250<br>300<br>250  200<br>200<br>150<br>150<br>100<br>100<br>50<br>50<br>0  0<br>0  50  100  150  200  0  50  100  150  200<br>T C [°C] T C [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>=f( V  DS); );  T  C=25 °C; =25 °C;  D  =0 Z  thJC=f( t  p)<br>parameter:  t  p / CO \ parameter:  “ 4 D  = : t  p - / T<br>10 [4 ] 10 [0 ]<br>limited by on-state<br>resistance<br>10 [3 ]<br>1 µs<br>10 µs<br>0.5<br>100 µs<br>10 [2 ]<br>1 ms  10 [-1 ] 0.2<br>10 [1 ] 10 ms  0.1<br>DC<br>0.05<br>10 [0 ] 0.02<br>0.01<br>single pulse<br>10 [-1 ] 10 [-2 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ]<br>V DS [V]  t p [s]<br> [W]<br> [A]<br>P tot I D<br> [A]   [K/W]<br>I D<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **3 Safe operating area** 

_I_ D=f( _V_ DS); ); _T_ C=25 °C; =25 °C; _D_ =0 parameter: _t_ p 

Rev. 1.1 (preliminary datasheet) 

page 4 

2013-08-12 

**IPT020N10N3** 

## **5 Typ. output characteristics** 

## _I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS fo 

## **6 Typ. drain-source on resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C 

parameter: _V_ GS 

**==> picture [469 x 609] intentionally omitted <==**

**----- Start of picture text -----**<br>
1200  6<br>10 V<br>1000  5<br>7.5 V  4.5 V<br>5 V<br>800  4<br>6 V<br>— Te | N \ ;<br>6 V<br>600  3<br>400  2  7.5 V<br>10 V<br>5 V<br>200  1<br>4.5 V<br>0  [— 0<br>0  1  2  3  4  5  0  200  400  600  800  1000  1200<br>V DS [V]  I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V  GS); |); | V  DS|>2||>2| I  D|| R  DS(on)max { _ g \  fs=f( I  D);  T  j=25 °C<br>parameter:  T  j<br>1200  300<br>1000  250<br>800  200<br>600  150<br>400  100<br>200  f ( 50  ( ue : y |<br>175 °C  25 °C<br>0  0<br>0  2  ZZ 4  6  8  ( - 0   y | 50  - 100  150  200<br>V GS [V]  I D [A]<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br> [A]   [S]<br>I D g fs<br>**----- End of picture text -----**<br>


## **7 Typ. transfer characteristics** 

_I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j 

Rev. 1.1 (preliminary datasheet) 

2013-08-12 

page 5 

**IPT020N10N3** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=150 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS 

parameter: _I_ D 

**==> picture [466 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
6  4<br>3.5<br>5<br>3<br>2750 µA<br>4<br>2.5<br>275 µA<br>3  2<br>max<br>1.5<br>2  typ<br>1<br>1<br>0.5<br>0  0<br>-60  -20  20  60  100  140  180  -60  -20  20  60  100  140  180<br>T j [°C] T j [°C]<br>]<br>W<br>[m  [V]<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

_C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz 

## **12 Forward characteristics of reverse diode** 

_I_ F=f( _V_ SD) 

parameter: _T_ j 

**==> picture [463 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [5 ] 10 [4 ]<br>Ciss<br>10 [4 ] 10 [3 ]<br>Sees a :\\ := = =<br>Coss<br>10 [3 ] 10 [2 ]<br>25 °C<br>175 °C<br>Crss<br>10 [2 ] 10 ( [1 ]  = = Z<br>10 [1 ] 10 [0 ]<br>0  20  40  60  80  100  0  0.5  1  1.5  2<br>V DS [V]  V SD [V]<br>C  [pF]   [A]  I F<br>**----- End of picture text -----**<br>


Rev. 1.1 (preliminary datasheet) 

page 6 

2013-08-12 

**IPT020N10N3** 

## **13 Avalanche characteristics** 

_I_ AS=f( _t_ AV); _R_ GS=25 W 

parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=100 A pulsed parameter: _V_ DD 

**==> picture [462 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000  10<br>7. Her \ | waeZ 4 - =<br>8<br>80 V<br>™ T |B | 1 . }<br>100  25 °C<br>50 V<br>100 °C  6<br>20 V<br>i?<br>nl 150 °C  is [<br>4<br>10<br>2<br>\ Ne LS i<br>\ _ pl |<br>1  0<br>1  10  100  1000  0  40  80  120<br>t AV [µs]  Q gate [nC]  [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T  j); );  I  D=1 mA=1 mA<br>110<br>V  GS<br>Q g<br>105<br>100<br>V  gs(th) 7 WA<br>95<br>Q  g(th) Q  sw Q gate<br>90  Q  gs Q  gd<br>-60  -20  20  60  100  140  180<br>T j [°C]<br> [A]   [V]<br>I AS V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>8<br>80 V<br>50 V<br>6<br>20 V<br>4<br>2<br>0<br>0  40  80  120  160<br>Q gate [nC]  [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


## **15 Drain-source breakdown voltage** 

_V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=1 mA=1 mA 

Rev. 1.1 (preliminary datasheet) 

2013-08-12 

page 7 

**IPT020N10N3** 

## **Package Outline** —<, caey, CO f rs _ 

Rev. 1.1 (preliminary datasheet) 

page 8 

2013-08-12 

**IPT020N10N3** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** 

**Legal Disclaimer** Tea5) The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, an | including without limitation, warranties of non-infringement of intellectual property rights of any third party. (OW! **Information** SX ae [2 For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). (CYSY aey) = 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. AD) Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 1.1 (preliminary datasheet) 

page 9 

2013-08-12 



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