# Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:2986485/)

**URL**: https://novapart.co/products/IPS70R600P7SAKMA1/power-mosfet-n-channel-700-v-85-a-049-ohm-to-251
**SKU**: IPS70R600P7SAKMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2150
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 43.1W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 700V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.5A |
| Drain Source On State Resistance | 0.49ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986485/)

**IPS70R600P7S** 

## **MOSFET** 

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CoolIMOS™ is a revolutionary technology for high voltage power tab<br>MOSFETs, designed according to the superjunction (SJ) principle and<br>pioneered by Infineon Technologies.<br>The latest CoolMOS™ P7 is an optimized platform tailored to target cost<br>sensitive applications in consumer markets such as charger, adapter,<br>lighting, TV, etc. ,<br>The new series provides all the benefits of a fast switching Superjunction , )<br>MOSFET, combined with an excellent price/performance ratio and state of 2 &<br>the art ease-of-use level. The technology meets highest efficiency 3<br>standards and supports high power density, enabling customers going<br>towards very slim designs.<br>Drain<br>Features Pin 2, Tab<br>« Extremely low losses due to very low FOM R DS(on)*Qg and R DS(on)*Eoss Sty<br>** ExcellentIntegratedthermalESD protectionbehaviordiode Pin 1Gate L IF<br>* Low switching losses (E oss) Ne<br>* Product validation acc. JEDEC Standard Source :<br>Pin 3<br>**----- End of picture text -----**<br>


## **Features** 

## **Benefits** 

|**Parameter**||**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|---|
|VDS @Tj=25°C||700||V||||
|RDS(on),max||0.6||Ω||||
|Qg,typ||10.5||nC||||
|ID,pulse||20.5||A||||
|Eoss @400V||1.2||µJ||||
|V(GS)th,typ||3||V||||
|ESD class(HBM)||2||||||
|IPS70R600P7S<br>~~Type/OrderingCode~~||**Package**<br>PG-TO 251-3<br>~~**|**~~|||**Marking**<br>70S600P7||see Appendix A<br>__Related Links|



Final Data Sheet 

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**700V�CoolMOSª�P7�Power�Transistor IPS70R600P7S** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

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Rev.�2.1,��2018-02-13 

**700V�CoolMOSª�P7�Power�Transistor IPS70R600P7S** 

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**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|8.5<br>5.0|A|TC= 20°C<br>TC= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|20.5|A|TC=25°C|
|Application (Flyback) relevant<br>avalanche current, single pulse3)|_I_AS|-|-|3.2|A|measured with standard leakage<br>inductance of transformer of 7µH|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0...400V|
|Gate source voltage|_V_GS|-16<br>-30|-<br>-|16<br>30|V|static;<br>AC (f>1 Hz)|
|Power dissipation|_P_tot|-|-|43.1|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-40|-|150|°C|-|
|Continuous diode forward current|_I_S|-|-|5.9|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|20.5|A|TC= 25°C|
|Reverse diode dv/dt4)|dv/dt|-|-|1|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Maximum diode commutation speed4)|dif/dt|-|-|50|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|Vrms, TC=25°C, t=1min|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction|_R_thJC|-|-|2.9|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6 mm (0.063 in.) from case for 10s|



> 1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 

> 2) Pulse width tp limited by Tj,max 

> 3) Proven during verification test.  For explanation please read AN - CoolMOSTM 700V P7. 

> 4) _V_ DClink=400V;� _V_ DS,peak< _V_ (BR)DSS;�identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

3 

Rev.�2.1,��2018-02-13 

**700V�CoolMOSª�P7�Power�Transistor IPS70R600P7S** 

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## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|700|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|2.50|3|3.50|V|_V_DS=_V_GS,_I_D=0.09mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=700V,_V_GS=0V,_T_j=25°C<br>_V_DS=700V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current incl. Zener<br>diode|_I_GSS|-|-|1|µA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.49<br>1.03|0.60<br>-|Ω|_V_GS=10V,_I_D=1.8A,_T_j=25°C<br>_V_GS=10V,_I_D=1.8A,_T_j=150°C|
|Gate resistance|_R_G|-|10|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|364|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|7|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|17|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|200|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|14|-|ns|_V_DD=400V,_V_GS=13V,_I_D=1.4A,<br>_R_G=5.3Ω|
|Rise time|_t_r|-|5.5|-|ns|_V_DD=400V,_V_GS=13V,_I_D=1.4A,<br>_R_G=5.3Ω|
|Turn-off delay time|_t_d(off)|-|63|-|ns|_V_DD=400V,_V_GS=13V,_I_D=1.4A,<br>_R_G=5.3Ω|
|Fall time|_t_f|-|23|-|ns|_V_DD=400V,_V_GS=13V,_I_D=1.4A,<br>_R_G=5.3Ω|



## **Table�6�����Gate�charge�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|1.6|-|nC|_V_DD=400V,_I_D=1.4A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|3.7|-|nC|_V_DD=400V,_I_D=1.4A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|10.5|-|nC|_V_DD=400V,_I_D=1.4A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=400V,_I_D=1.4A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.1,��2018-02-13 

4 

**700V�CoolMOSª�P7�Power�Transistor IPS70R600P7S** 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=2.5A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|190|-|ns|_V_R=400V,_I_F=1.4A,d_i_F/d_t_=50A/µs|
|Reverse recoverycharge|_Q_rr|-|0.8|-|µC|_V_R=400V,_I_F=1.4A,d_i_F/d_t_=50A/µs|
|Peak reverse recoverycurrent|_I_rrm|-|9|-|A|_V_R=400V,_I_F=1.4A,d_i_F/d_t_=50A/µs|



Final Data Sheet 

Rev.�2.1,��2018-02-13 

5 

**IPS70R600P7S** 

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50 10 [2]<br>45 a | OO<br>e e A OO 0 1 µs<br>10 µs<br>40 10 [1]<br>—— —————————— — SN  EE H TT<br>e e N l! RSS NE<br>100 µs<br>35 ————/— ee ONE NN<br>1 ms<br>30 10 [0]<br>——_—_——— AANNNU<br>25 10 ms<br>————— a<br>20 10 [-1]<br>15 [_———KR——  / ANRAEE DC REE<br>———— AIN EET<br>10 10 [-2] |IN<br>———————— a ee<br>eS a FeeeeNUT<br>5 — ——————— ANS EEE<br>Se eee eel ee cali EN Sat<br>0 —————— on 10 [-3] aa ell<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C V DS<br>OOOCOCOCSCSC‘“‘“‘(C‘C™SC* P tot=f( T C) d I SCC‘#SCRSPG;“Diporamstorn D=f( V DS T C D t p<br>PC [°C] [V]—SSC~“‘~‘~*d<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [2] 10 [1]<br>1 µs<br>10 [1] | eT NTTI N | ET |<br>= S S 10 µs ae PTT EEE EEE ETT<br>100 µs<br>ARNG OSKEET i,<br>0.5<br>10 [0] OSS 1 ms SSNS SN A<br>PZ TINS UOT TY<br>10 [0] 0.2<br>10 ms<br>. 10 [-1] EHH HHH iy SEN - 0.1 eff<br>TEI SECINU | EEE<br>0.05<br>DC<br>0.02<br>EE NNT 9?(in<br>10 [-2]<br>0.01<br>dE AN Fa<br>single pulse<br>NE<br>ee ell<br>10 [-3] 10 [-1]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPS70R600P7S** 

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25 TT LELELELLLLLeld 20 V 18 a 20 V<br>10 V 10 V<br>PEEEE EEE EEE<br>8 V 16<br>PET TT tt Py TP TT TT Tt a 8 V<br>—a 7 V<br>20<br>poe |  Ee 14<br>2UDC ge 7 V EEESSSEEE EEEeee<br>SSE SSS gg Soe EAee<br>12<br>15 EE Er 6 V | A 5.5 V6 V<br>SHES f fi 10 See 2 a<br><x Wit al — <x [| [| | | | | | | | | yggnAr jv7T | fT ft lll<br>SCP y e = Pe e<br>8<br>10 SaRae? Zee 5.5 V aeeeae” 72eeee eee<br>5 V<br>SoonP 44c eeeeeeeeeee O f<br>6<br>OO ff ______-____<br>R ee 5 V 4 Pepe 4.5 V<br>5<br>DDoY peAe40Seee e ee 4.5 V || | 2 =AA  SeEEEEEEEEEEES<br>LAT l | tT eT TE ET TET EE TT 7 7a 2<br>AGE EEE EEE EERE eee a<br>0 0<br>0 5 10 15 20 0 5 10 15 20<br>V DS [V] V DS [V]<br>I D=f( V DS ); T j =25 °C; parameter: V GS I D=f( V DS ); T j =125 °C; parameter: V GS<br>I D I D<br>**----- End of picture text -----**<br>


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Final Data Sheet 

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**IPS70R600P7S** 

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25 10<br>Too od 1]<br>FoOO Td 9 : y,<br>20 a 25 °C 8 I)<br>es ry Y,<br>120 V<br>TTTFT TETEd 7 HWy<br>400 V<br>15 FoAed 6 Saeeee | Ae<br>g a Y<br>— fe— |_| 5 "<br>150 °C<br>10 EEFo EE ET 4 S pan aa<br>oT<br>fe [A]  OY/EE<br>a 3<br>a| |<br>5 2<br>sf<br>aa7|<br>iY / 1<br>a<br>0 0<br>0 2 4 6 8 10 12 0 5 10 15<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS V DS T j V GS=f( Q gate I D V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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10 [2] 840<br>25 °C<br>125 °C 820<br>=a ==== === ===)<br>hae: es cs cel a l OD es<br>800<br>FE SS) SESE<br>ptt ttt er 780 A<br>i<br>10 [1] 760<br>a ss YA CO OO CO CO<br>740<br>SSeeeveeeeeeees | ERE<br>| RF 4SS fe Oe<br>720<br>= FRR SEEEREEREGR Fe eee<br>Pt tt aft tT PE TE Ey tT 700 oI<br>i <<br>10 [0] || 680 ARE Led<br>a ee ee<br>;+A| | =p 7 |$+ +$[| [|+ [|+JT JT 7 JT Tt JT] 660 i 2<br>640<br>FESS) ERS SEE<br>Pt tat Te et tT ey tT 620 a<br>a<br>10 [-1] 600<br>0 1 2 3 -75 -50 -25 0 25 50 75 100 125 150 175<br>V SD Vv] T j [°C]<br>I F=f( V SD T j V BR(DSS)=f( T j I D<br>I F<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPS70R600P7S** 

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10 [4] 3.0<br>=== SS SSS = a<br>ce ce ee a<br>10 [3] NERVt} | ti | ty yyy 2.5 +++}a ++ +++<br>Ciss<br>======e=======———=== a<br>2.0<br>S se | REESE<br>10 [2] SERRE RRRR RR ESSESSS SSE EEA<br><<. =-==—=—=—=————=—=—=— 0 ee<br>F DN(Pee Eee]ee (2 1.5 SeePT tt. ft | tt LA EL 4<br>10 [1] ALN Coss | LE} | | a<br>=== ——————— 1.0 od<br>rytt{.:??t-??to tt. eeee<br>OC a<br>Crss<br>10 [0] FA | |] | erry ed<br>0.5<br>= =SS >—S=SSSSSSSS=S== si oe<br>SS ee PSEt<br>|] | | | tt te te ThE rT TE rT rT TT eee eee<br>10 [-1] PTET TTT ETT TT 0.0 PSS et<br>0 100 200 300 400 500 0 100 200 300 400 500 600 700<br>V DS V DS<br>SOSCSOSCCSCOSOSOOOOCOC C =f( V DS V GS f O E oss COCOSSCSCSCSCSCSCS*dY = f (V DS )<br>[yaa [V] [V]<br>C oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**IPS70R600P7S** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

**700V�CoolMOSª�P7�Power�Transistor IPS70R600P7S** 

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## **6�����Package�Outlines** 

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||||||||||||||||||**DOCUMENT**|**DOCUMENT**|**DOCUMENT**|**DOCUMENT**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||Z8B00181052||||||||||||||||
||**DIM**||**MILLIMETERS**<br>MIN|||MAX||MIN|**INCHES**<br>MAX|||||||||**SCALE**<br>0|||||||||||||||||
||**A**||2.20|||2.40||0.087|||0.094||||||||||||||||||||||||
||**A1**<br>**b**||0.90<br>0.64|||0.89<br>1.14||0.035<br>0.025|||0.035<br>0.045|||||||||2.0|||||||||||||||
||**b2**||0.65|||1.15||0.026|||0.045||||||0|||2.0|||||||||||||||
||**b4**||5.20|||5.50||0.205|||0.217|||||||||||||||4mm|||||||||
||**c**||0.46|||0.60||0.018|||0.024||||||||||||||||||||||||
||**c2**||0.46|||0.60||0.018|||0.024|||**EUROPEAN PROJECTION**|||||||||||||||||||||
||**D**||5.98|||6.22||0.235|||0.245||||||||||||||||||||||||
||**D1**<br>**E**||6.35<br>5.00|||6.73<br>5.60||0.250<br>0.197|||0.265<br>0.220||||||||||||||||||||||||
||**E1**||4.63|||5.21||0.182|||0.205||||||||||||||||||||||||
||**e**<br>**e1**||2.29<br>4.57||||||0.090<br>0.180|||||||||||**ISSUE DATE**|||||||||||||||
||**N**<br>**L**<br>**L1**||3.30<br>0.85|3||3.60<br>1.25||0.130<br>0.033||3|0.142<br>0.049|||||||||06-04-2016<br>**REVISION**|||||||||||||||
||**L2**||0.88|||1.28||0.035|||0.050|||||||||01|||||||||||||||



**Figure�1�����Outline�PG-TO�251-3,�dimensions�in�mm/inches** 

Final Data Sheet 

11 

Rev.�2.1,��2018-02-13 

**IPS70R600P7S** 

- 

- 

Final Data Sheet 

12 

**IPS70R600P7S** 

## IPS70R600P7S 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-10-11|Release of final version|
|2.1|2018-02-13|Corrected front page text|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/IPS70R600P7SAKMA1/power-mosfet-n-channel-700-v-85-a-049-ohm-to-251)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ips70r600p7sakma1/mosfet-n-ch-700v-8-5a-43-1w-to/dp/2986485)
---

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