# Power MOSFET, N Channel, 700 V, 12.5 A, 0.36 ohm, TO-251, Through Hole

![Product image](https://novapart.co/image/farnell:2986484/)

**URL**: https://novapart.co/products/IPS70R360P7SAKMA1/power-mosfet-n-channel-700-v-125-a-036-ohm-to-251
**SKU**: IPS70R360P7SAKMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2660
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:700V; On Resistance Rds(on); Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | CoolMOS P7 |
| Qualification | - |
| Power Dissipation | 59.5W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251 |
| Drain Source Voltage Vds | 700V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12.5A |
| Drain Source On State Resistance | 0.36ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986484/)

**IPS70R360P7S** 

## **MOSFET** 

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CoolIMOS™ is a revolutionary technology for high voltage power tab<br>MOSFETs, designed according to the superjunction (SJ) principle and<br>pioneered by Infineon Technologies.<br>The latest CoolMOS™ P7 is an optimized platform tailored to target cost<br>sensitive applications in consumer markets such as charger, adapter,<br>lighting, TV, etc. ,<br>The new series provides all the benefits of a fast switching Superjunction , )<br>MOSFET, combined with an excellent price/performance ratio and state of 2 &<br>the art ease-of-use level. The technology meets highest efficiency 3<br>standards and supports high power density, enabling customers going<br>towards very slim designs.<br>Drain<br>Features Pin 2, Tab<br>« Extremely low losses due to very low FOM R DS(on)*Qg and R DS(on)*Eoss Sty<br>** ExcellentIntegratedthermalESD protectionbehaviordiode Pin 1Gate L IF<br>* Low switching losses (E oss) Ne<br>* Product validation acc. JEDEC Standard Source :<br>Pin 3<br>**----- End of picture text -----**<br>


## **Features** 

## **Benefits** 

|**Parameter**||**Value**|**Value**|**Unit**||||
|---|---|---|---|---|---|---|---|
|VDS @Tj=25°C||700||V||||
|RDS(on),max||0.36||Ω||||
|Qg,typ||16.4||nC||||
|ID,pulse||34||A||||
|Eoss @400V||1.8||µJ||||
|V(GS)th,typ||3||V||||
|ESD class(HBM)||2||||||
|IPS70R360P7S<br>~~Type/OrderingCode~~||**Package**<br>PG-TO 251-3<br>~~**|**~~|||**Marking**<br>70S360P7||see Appendix A<br>__Related Links|



Final Data Sheet 

1 

**700V�CoolMOSª�P7�Power�Transistor IPS70R360P7S** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 

Final Data Sheet 

2 

Rev.�2.1,��2018-02-13 

**700V�CoolMOSª�P7�Power�Transistor IPS70R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ j�=�25°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-<br>-|-<br>-|12.5<br>7.5|A|TC= 20°C<br>TC= 100°C|
|Pulsed drain current2)|_I_D,pulse|-|-|34|A|TC=25°C|
|Application (Flyback) relevant<br>avalanche current, single pulse3)|_I_AS|-|-|4.5|A|measured with standard leakage<br>inductance of transformer of 10µH|
|MOSFET dv/dt ruggedness|dv/dt|-|-|100|V/ns|_V_DS=0...400V|
|Gate source voltage|_V_GS|-16<br>-30|-<br>-|16<br>30|V|static;<br>AC (f>1 Hz)|
|Power dissipation|_P_tot|-|-|59.5|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-40|-|150|°C|-|
|Continuous diode forward current|_I_S|-|-|8.5|A|_T_C=25°C|
|Diode pulse current2)|_I_S,pulse|-|-|34|A|TC= 25°C|
|Reverse diode dv/dt4)|dv/dt|-|-|1|V/ns|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Maximum diode commutation speed4)|dif/dt|-|-|50|A/µs|_V_DS=0...400V,_I_SD<=_I_S,_T_j=25°C|
|Insulation withstand voltage|_V_ISO|-|-|n.a.|V|Vrms, TC=25°C, t=1min|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction|_R_thJC|-|-|2.1|°C/W|-|
|Thermal resistance,junction  - ambient|_R_thJA|-|-|62|°C/W|leaded|
|Thermal resistance, junction  - ambient<br>for SMD version|_R_thJA|-|-|-|°C/W|n.a.|
|Soldering temperature, wavesoldering<br>only allowed at leads|_T_sold|-|-|260|°C|1.6 mm (0.063 in.) from case for 10s|



> 1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 

> 2) Pulse width tp limited by Tj,max 

> 3) Proven during verification test.  For explanation please read AN - CoolMOSTM 700V P7. 

> 4) _V_ DClink=400V;� _V_ DS,peak< _V_ (BR)DSS;�identical�low�side�and�high�side�switch�with�identical� _R_ G 

Final Data Sheet 

3 

Rev.�2.1,��2018-02-13 

**700V�CoolMOSª�P7�Power�Transistor IPS70R360P7S** 

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## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|700|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_(GS)th|2.50|3|3.50|V|_V_DS=_V_GS,_I_D=0.15mA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>10|1<br>-|µA|_V_DS=700V,_V_GS=0V,_T_j=25°C<br>_V_DS=700V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current incl. Zener<br>diode|_I_GSS|-|-|1|µA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|0.30<br>0.67|0.36<br>-|Ω|_V_GS=10V,_I_D=3.0A,_T_j=25°C<br>_V_GS=10V,_I_D=3.0A,_T_j=150°C|
|Gate resistance|_R_G|-|30|-|Ω|_f_=1MHz,opendrain|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|517|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Output capacitance|_C_oss|-|11|-|pF|_V_GS=0V,_V_DS=400V,_f_=250kHz|
|Effective output capacitance, energy<br>related1)|_C_o(er)|-|27|-|pF|_V_GS=0V,_V_DS=0...400V|
|Effective output capacitance, time<br>related2)|_C_o(tr)|-|329|-|pF|_I_D=constant,_V_GS=0V,_V_DS=0...400V|
|Turn-on delay time|_t_d(on)|-|19|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.3A,<br>_R_G=5.3Ω|
|Rise time|_t_r|-|8|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.3A,<br>_R_G=5.3Ω|
|Turn-off delay time|_t_d(off)|-|100|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.3A,<br>_R_G=5.3Ω|
|Fall time|_t_f|-|18|-|ns|_V_DD=400V,_V_GS=13V,_I_D=2.3A,<br>_R_G=5.3Ω|
|**Table6Gatechargecharacteristics**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.3|-|nC|_V_DD=400V,_I_D=2.3A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|6.0|-|nC|_V_DD=400V,_I_D=2.3A,_V_GS=0to10V|
|Gate charge total|_Q_g|-|16.4|-|nC|_V_DD=400V,_I_D=2.3A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=400V,_I_D=2.3A,_V_GS=0to10V|



> 1) _C_ o(er)�is�a�fixed�capacitance�that�gives�the�same�stored�energy�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

> 2) _C_ o(tr)�is�a�fixed�capacitance�that�gives�the�same�charging�time�as� _C_ oss�while� _V_ DS�is�rising�from�0�to�400V 

Final Data Sheet 

Rev.�2.1,��2018-02-13 

4 

**700V�CoolMOSª�P7�Power�Transistor IPS70R360P7S** 

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## **Table�7�����Reverse�diode�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode forward voltage|_V_SD|-|0.9|-|V|_V_GS=0V,_I_F=3.8A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|210|-|ns|_V_R=400V,_I_F=2.3A,d_i_F/d_t_=50A/µs|
|Reverse recoverycharge|_Q_rr|-|1|-|µC|_V_R=400V,_I_F=2.3A,d_i_F/d_t_=50A/µs|
|Peak reverse recoverycurrent|_I_rrm|-|10|-|A|_V_R=400V,_I_F=2.3A,d_i_F/d_t_=50A/µs|



Final Data Sheet 

Rev.�2.1,��2018-02-13 

5 

700V CoolIMOS™ P7 Power Transistor 

**IPS70R360P7S** 

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**----- Start of picture text -----**<br>
80 10 [2]<br>70 1 µs<br>10 µs<br>————$_———— 10 [1] Te STi SST<br>100 µs<br>60<br>LN po AT TT NTT ARNT TTT<br>e s NENT 1 ms ONENTELL<br>50<br>S e ee 10 [0] 7TT\ Nu NN<br>a NEN ONELINT<br>ee a ee Se eee ee mee<br>=Se 40 RSee ee ee eeSSNL 10 ms<br>30 ee ee 10 [-1] ee) DC ell<br>20 > eSOS I OO OO OS GO<br>| 10 [-2] es<br>10 SSS ae<br>———— ENN<br>———a Re a ee<br>0 NY 10 [-3] eeee All<br>0 25 50 75 100 125 150 10 [0] 10 [1] 10 [2] 10 [3]<br>T C [°C] V DS VJ<br>2 P tot=f( T C) I D=f( V DS T C D =O; parameters t p<br>P tot I D<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [2] 10 [1]<br>es es a<br>10 [1] HE|N ENNS 10 µs T 1 µs NATHATH i |<br>SSNS NS 100 µs NSS NS ITUE EEE<br>TTI NN ENON 1 ms O O<br>10 [0]<br>0.5<br>2 Se 10 ms |S 10 [0] wall<br>SHSat SESAME | = EHad<br>10 [-1] Nl Se 0.2  SA<br>DC<br>TOTOeee eee SeTNT eo)” 0.050.1 y all 4hAnn|<br>10 [-2]<br>tN 0.02 297A<br>ey nee Os cca ee Os Ga<br>a y 0.01<br>aeeee e e ill YV4 single pulse<br>10 [-3] 10 [-1]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC t P D=t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**IPS70R360P7S** 

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**----- Start of picture text -----**<br>
40 30<br>20 V 20 V<br>|Pp [|[ [|[| [|[| [|| [|— [TTTT JT| TTTT TTTT TTfT TTfT TTfT TTtT 7fT 7tT Tftf 10 V eee fT TTT tT ttt tt tt ht tT tT<br>10 V<br>8 V<br>35 SES SSSSE SESS o SS eae ESeSneeeeneeneaeee 8 V<br>EERE FE EE ES EE EE oe 25 Preppy<br>7 V<br>Poe rrr rrr,<br>30 PEE+++} | 4aa 7 V | Sere—=Z<br>a geAr) 20 eeena<br>6 V<br>25 6 V<br>SRE A, eeee<br>5.5 V<br>| Ge<br>20 15<br>gS ee e A e<br>SE OE ee Z o<br>15 a oo 5.5 V SO<br>5 V<br>ff if fo 10 f<br>10 COD WYLLEEELEELL LLL 5 V ’ S74<br>4.5 V<br>—f —— oe)42.<br>5<br>AOR EERE EEEEEEEES S OBER<br>5 4.5 V<br>p ass sb EERE ERE ERE<br>a SSS | | C7, APE<br>0 | a 0 7A<br>0 5 10 15 20 0 5 10 15 20<br>V DS IV] V DS IV]<br>I D=f( V DS T j V GS I D=f( V DS T j V GS<br>I D I D<br>**----- End of picture text -----**<br>


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2.00 | tt | dT dT Th | TT | ht TT 1.00 —_—_—_$_[—$—_$—_ _—=“_$_=_==_==<br>1.80 0.90<br>ee (C(O<br>ee (C(O<br>1.60 0.80<br>6.5 V eSeSSSSSSSe e ”y” AA<br>TT<br>1.40 7 V 0.70<br>eS SS A ” ee”<br>1.20 0.60<br>5 V 5.5 V 6 V<br>y, LZ, ee | 98% fA OY<br>1.00 0.50<br>ALL. 10 V Se SS<br>0.80 0.40<br>typ<br>AeA SS ee eS<br>0.60 0.30<br>a ee a ee eee ee eee<br>0.40 0.20<br>eS SSSS<br>eS SSSS<br>0.20 0.10<br>eS SSSS<br>0.00 Ft} tT tt | dE dE dE ET Tt 0.00 e SsSSSSee ee ee<br>0 10 20 30 -50 -25 0 25 50 75 100 125 150<br>I D [Al T j [°C]<br>R DS(on)=f( I D T j V GS R DS(on)=f( T j I D V GS<br>] Ω ] Ω<br> [<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**IPS70R360P7S** 

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**----- Start of picture text -----**<br>
40 10<br>a || y<br>a 9 A<br>35 LSSS SDQC //<br>a ee ee ee ee 25 °C [| 8 [|<br>a Se 2 /<br>30 LS RS A y<br>a a eee 7 120 V /)<br>25<br>a aS [|] SR|||Aee | 6 TLELLL YiWIAy/, 400 V TLL<br>a<br>aS Ss WA<br><= 20 a ee ee | ee a 5 [<br>150 °C<br>15 aaaa ef||(|eeee eeee eeee ee| 4 fi} | | jf :<br>aa SeFf 3<br>10 LS yffA A<br>aa yf2eeee 2<br>a 2 ee ee<br>5 apfa tT2A ee ee ee ee ee 1<br>Pp [| [ [ 7F [| fT fT fT tT<br>0 aSC O 0<br>0 2 4 6 8 10 12 0 5 10 15 20<br>V GS [Vv] Q gate [nC]<br>I D=f( V GS ); V DS =20V; parameter: T j V GS=f( Q gate ); I D =2.3 A pulsed; parameter: V DD<br>I D V GS<br>**----- End of picture text -----**<br>


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10 [2] a 25 °C 840 [| | [| FT fT J ft ft fT JT]<br>a 1. 125 °C rot_ FEES| [| | [ [ tT [ 7 TT TT tT ft 7 820 a<br>fhe FT Eee a ee eeee<br>TPE 800 ee<br>PET T TTTET yrTy | eee eer |a| | a |ee| [ fF fT f[ J |<br>780<br>EET ea | | [| | [ [ Jf | YT |<br>10 [1] 760 SSS SSS Et<br>re OO<br>_ YrFrPrrrrry[ [ [| [| [ [TT [ [7 YErPeerreeeeee[7T [ [ TT TT TT TT T 7 7] sols 740 | | [| | [| [TA FT JT JT |<br>< ffllTTTTTiyyrTTyTrTyT 720<br>a<br>LETT yyy |= 700 fe FY<br>EEE 7 2<br>10 [0] 680<br>aSSeSAGE| EEECC| SSRa 7 YASS SEE t=<br>YtLEE| | EL LLL| tT tpg  LLLELLtT tT tT tT tT 7LLLtT tT tT tTELL7 | 660 | |A | | [| | | Jf ff<br>rE LEE YEE LLL LL T_| 640 a<br>PET TE ET EE 620 |Pfftff ff<br>PLE ELLE ee| | | [| fT eeft ft ft Tf<br>10 [-1] 600<br>0.0 0.5 1.0 1.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 175<br>V SD [Vv] T j [°C]<br>I F=f( V SD ); parameter: T j V BR(DSS)=f( T j ), I D =1mA<br>I F<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**IPS70R360P7S** 

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**----- Start of picture text -----**<br>
10 [4] ————————————— 4.0 A<br>FS SS ee ee<br>a a<br>AEE EEE eee 3.5 See<br>pL eee eee erry<br>10 [3]<br>=== Ciss == yf<br>— Ft ee ee ee hy,<br>— ——— ————————— 3.0 SSS<br>a 2<br>B EE == eee<br>2.5<br>10 [2] URE ee4<br>Tm SSHA] —————————— — e ef<br>=[" trecweet#eeFFFC LCP FF OLLLOLOL LL = 2.0 A N,N2<br>PERCE Coss a<br>10 [1]<br>= 1.5 a<br>aee<br>A a  e<br>ee Crss 1.0 eeee<br>10 [0] PTT deer EE ee ee ee<br>SS ee ee ee Cf<br>S aSS 0.5 HEEeS TE EEE ETE [EEE]<br>E ERE Pe<br>10 [-1] 0.0 A<br>0 100 200 300 400 500 0 100 200 300 400 500 600 700<br>V DS [V] V DS wal<br>O C =f( V DS V GS f A E oss = f (V DS )<br>C oss<br>E<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**IPS70R360P7S** 

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**----- Start of picture text -----**<br>
Test circuit for diode characteristics Diode recovery waveform<br>V,1 y<br>R 1<br>g Vg feminineee So 7 7<br>$90 % Vps<br>r<br>@™ dv/dt<br>V DS aytt<br>t<br>R 2<br>g<br>dl, / dt } 10%Vie| 5<br>Qe 10% lm<br>I F<br>R 1 = R 2<br>g g<br>Table 9 Switching times<br>Switching times test circuit for inductive load Switching times waveform<br>V DS<br>90%<br>V DS<br>V GS 10%<br>V GS<br>t d(on) t r t d(off) t f<br>t on t off<br>jb JRE<br>Table 10 Unclamped inductive load<br>Unclamped inductive load test circuit Unclamped inductive waveform<br>V<br>(BR)DS<br>I D V DS<br>V DS V DS<br>I D<br>**----- End of picture text -----**<br>


Final Data Sheet 

10 

**700V�CoolMOSª�P7�Power�Transistor IPS70R360P7S** 

**==> picture [120 x 53] intentionally omitted <==**

## **6�����Package�Outlines** 

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||||||||||||||||||**DOCUMENT**|**DOCUMENT**|**DOCUMENT**|**DOCUMENT**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**|**NO.**||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||Z8B00181052||||||||||||||||
||**DIM**||**MILLIMETERS**<br>MIN|||MAX||MIN|**INCHES**<br>MAX|||||||||**SCALE**<br>0|||||||||||||||||
||**A**||2.20|||2.40||0.087|||0.094||||||||||||||||||||||||
||**A1**<br>**b**||0.90<br>0.64|||0.89<br>1.14||0.035<br>0.025|||0.035<br>0.045|||||||||2.0|||||||||||||||
||**b2**||0.65|||1.15||0.026|||0.045||||||0|||2.0|||||||||||||||
||**b4**||5.20|||5.50||0.205|||0.217|||||||||||||||4mm|||||||||
||**c**||0.46|||0.60||0.018|||0.024||||||||||||||||||||||||
||**c2**||0.46|||0.60||0.018|||0.024|||**EUROPEAN PROJECTION**|||||||||||||||||||||
||**D**||5.98|||6.22||0.235|||0.245||||||||||||||||||||||||
||**D1**<br>**E**||6.35<br>5.00|||6.73<br>5.60||0.250<br>0.197|||0.265<br>0.220||||||||||||||||||||||||
||**E1**||4.63|||5.21||0.182|||0.205||||||||||||||||||||||||
||**e**<br>**e1**||2.29<br>4.57||||||0.090<br>0.180|||||||||||**ISSUE DATE**|||||||||||||||
||**N**<br>**L**<br>**L1**||3.30<br>0.85|3||3.60<br>1.25||0.130<br>0.033||3|0.142<br>0.049|||||||||06-04-2016<br>**REVISION**|||||||||||||||
||**L2**||0.88|||1.28||0.035|||0.050|||||||||01|||||||||||||||



**Figure�1�����Outline�PG-TO�251-3,�dimensions�in�mm/inches** 

Final Data Sheet 

11 

Rev.�2.1,��2018-02-13 

**IPS70R360P7S** 

- 

- 

Final Data Sheet 

12 

**IPS70R360P7S** 

## IPS70R360P7S 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-10-11|Release of final version|
|2.1|2018-02-13|Corrected front page text|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

13 



## Links

- [View this product on Novapart](https://novapart.co/products/IPS70R360P7SAKMA1/power-mosfet-n-channel-700-v-125-a-036-ohm-to-251)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ips70r360p7sakma1/mosfet-n-ch-700v-12-5a-59-5w-to/dp/2986484)
---

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